Dual Contact and Power Rail for High Performance Standard Cells

    公开(公告)号:US20230299001A1

    公开(公告)日:2023-09-21

    申请号:US17655716

    申请日:2022-03-21

    Applicant: Apple Inc.

    CPC classification number: H01L23/5286 H01L29/4175

    Abstract: A standard cell layout that may be implemented in FinFET devices or nanosheet FET devices is disclosed. The standard cell layout includes power supply connections from both a topside metal layer and a backside metal layer. A device in the standard cell may be connected to both the topside metal layer and the backside metal layer. Source/drain regions of the device may be connected the metal layers using via contacts within the standard cell layout. Connections to power supply rails from the topside metal layer and the backside metal layer may also be included in the standard cell layout. The rails may be connected to a power supply such that the power supply provides power to the device through both the topside and backside metal layers.

    Context-aware reliability checks
    7.
    发明授权

    公开(公告)号:US09607125B1

    公开(公告)日:2017-03-28

    申请号:US14732971

    申请日:2015-06-08

    Applicant: Apple Inc.

    CPC classification number: G06F17/5081 G06F2217/76

    Abstract: Embodiments of an electromigration (EM) check scheme to reduce a pessimism on current density limits by checking wire context. This methodology, in an embodiment, includes applying existing electronic design automation (EDA) flows and tools to identify potentially-failing wires based on a worst-case EM check using conservative foundry current density limits. A more accurate, context-specific check can be performed on the potentially-failing wires to eliminate one or more of the potentially-failing wires if those wires do not experience worst-case conditions and meet current density limits based on an actual context of those wires. A designer can correct remaining wires which are not eliminated by the context-specific check.

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