Abstract:
An apparatus includes a plurality of circuit blocks, a plurality of scan-enabled flip-flop circuits, and a plurality of scan signature circuits. The plurality of scan-enabled flip-flop circuits may be coupled in a sequential manner across the plurality of circuit blocks, and be configured to shift a scan chain test signal from a test input interface to a test output interface. The plurality of scan signature circuits may be coupled to respective ones of a subset of the plurality of scan-enabled flip-flop circuits, and be configured to, in response to a particular test signal, concurrently load a known scan-chain pattern to the subset of the scan-enabled flip-flop circuits. The plurality of scan-enabled flip-flop circuits may be further configured to sequentially output at least a portion of the known scan-chain pattern to the test output interface.
Abstract:
Microelectronic modules are described. In an embodiment, a microelectronic module includes a module substrate, a chip mounted onto the module substrate, and a semiconductor-based integrated passive device between the chip and the module substrate. The semiconductor-based integrated passive device may include an upper RDL stack-up with thicker wiring layers than a lower BEOL stack-up. The semiconductor-based integrated passive device may be further solder bonded or hybrid bonded with the chip.
Abstract:
An apparatus includes a plurality of circuit blocks, a plurality of scan-enabled flip-flop circuits, and a plurality of scan signature circuits. The plurality of scan-enabled flip-flop circuits may be coupled in a sequential manner across the plurality of circuit blocks, and be configured to shift a scan chain test signal from a test input interface to a test output interface. The plurality of scan signature circuits may be coupled to respective ones of a subset of the plurality of scan-enabled flip-flop circuits, and be configured to, in response to a particular test signal, concurrently load a known scan-chain pattern to the subset of the scan-enabled flip-flop circuits. The plurality of scan-enabled flip-flop circuits may be further configured to sequentially output at least a portion of the known scan-chain pattern to the test output interface.
Abstract:
Various implementations of backside and topside routing of bitlines and wordlines in memory arrays are disclosed. Bitlines in backside and topside metal layers may be alternated between adjacent bit cells in a memory array. Alternating the location of the bitlines between bit cells in the memory array may reduce bitline capacitance in a memory array. Placing wordlines in backside metal layers may allow dual wordlines to be implemented across a span of bit cells in a memory array. The dual wordlines may be alternately connected to adjacent bit cells, thereby allowing selective toggling of bit cells based on the wordline transmitting a control signal.
Abstract:
In an embodiment, the amount of supply voltage guardband to prevent incorrect operation due to aging effects may be modeled using an IC-specific age model generated early in the product life cycle of the IC. For example, high temperature operating life (HTOL) testing may be performed at multiple temperatures and/or voltages to develop the IC-specific age model. The IC-specific age model may be more accurate then the calculations used to develop guardband voltage as discussed previously, which rely on the aging of a single transistor. The IC-specific age model may be used along with monitoring of the aging effects during operation of the IC to predict an amount of increased guardband voltage that is currently desirable to apply to the IC. The predicted amount may vary from about zero when the IC is new to the full amount of guardband voltage when the IC is nearing end of life.
Abstract:
A cell layout that may be implemented in FinFET devices or other FET devices is disclosed. The cell layout utilizes an isolation gate structure to provide routing between a signal input of an active gate and a backside metal layer. The isolation gate structure includes a metal fill surrounded by gate spacers. The metal fill connects between the topside layers in the device and the backside layer in the device. The metal fill may be connected to the signal input of the active gate through routing either in a topside metal layer or a metal wire placed in a topside insulating layer. The isolation gate structure can be part of any standard cell being placed at a cell boundary or inside the cell to provide access to backside signal routing. Additionally, filler cells with isolation gate structures may provide backside routing connections for adjacent functional cells.
Abstract:
Chip structures and electronic modules including a power delivery network (PDN) routing structure and signal routing structure to balance power, signaling, and thermal requirements are described. In an embodiment, the chip includes a device layer, a PDN routing structure on top of the device layer, and a signal routing structure underneath the device layer.
Abstract:
In an embodiment, a lifetime controller is configured to monitor operating conditions for a device, and to control operating conditions based on the previous conditions to improve the reliability characteristics of the device while permitting strenuous use as available. For example, the lifetime controller may permit strenuous use when the device is first powered on. Once a specified amount of strenuous use has occurred, the controller may cause the operating conditions to be reduced to reduce the wear on the device, and thus help to extend the lifetime of the device. Similarly, if a device is used in less strenuous conditions, the controller may accumulate credit which may be expended by permitting the device to operate in more strenuous conditions for a period of time.
Abstract:
Embodiments of an electromigration (EM) check scheme to reduce a pessimism on current density limits by checking wire context. This methodology, in an embodiment, includes applying existing electronic design automation (EDA) flows and tools to identify potentially-failing wires based on a worst-case EM check using conservative foundry current density limits. A more accurate, context-specific check can be performed on the potentially-failing wires to eliminate one or more of the potentially-failing wires if those wires do not experience worst-case conditions and meet current density limits based on an actual context of those wires. A designer can correct remaining wires which are not eliminated by the context-specific check.
Abstract:
A software tool and method for analyzing the reliability or failure rate of an integrated circuit (IC) are disclosed. The IC may include a plurality of circuit designs, and the software tool and method may aid a designer of the IC in determining a reliability rating of the IC based on reliability ratings of transistors or other circuit devices used in the circuit designs. In particular, the IC may include one or more circuit designs that have multiple instances within the IC (i.e., the same circuit design is instantiated multiple times), and the software tool and method may take into account the multiple instances when determining the reliability rating of the IC.