公开(公告)号：US10290504B2

公开(公告)日：2019-05-14

申请号：US15822435

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： Wei Liu ,  Theresa Kramer Guarini ,  Huy Q. Nguyen ,  Malcolm Bevan ,  Houda Graoui ,  Philip A. Bottini ,  Bernard L. Hwang ,  Lara Hawrylchak ,  Rene George

IPC: H01L21/28 ,  H01L21/3105 ,  H01J37/32 ,  H01L29/51

Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

公开(公告)号：US11885021B2

公开(公告)日：2024-01-30

申请号：US17317418

申请日：2021-05-11

Applicant: Applied Materials, Inc.

Inventor： Kartik Shah ,  Vishwas Kumar Pandey ,  Kailash Pradhan ,  Sairaju Tallavarjula ,  Rene George ,  Eric Kihara Shono ,  Philip A. Bottini ,  Roger Curtis

IPC: C23C16/455 ,  H01L21/67 ,  C23C14/56 ,  C23C16/44

CPC classification number: C23C16/45591 ,  C23C14/564 ,  C23C14/566 ,  C23C16/4401 ,  C23C16/45563 ,  H01L21/67126

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.

公开(公告)号：US09831091B2

公开(公告)日：2017-11-28

申请号：US15171001

申请日：2016-06-02

Applicant: Applied Materials, Inc.

Inventor： Wei Liu ,  Theresa Kramer Guarini ,  Huy Q. Nguyen ,  Malcolm Bevan ,  Houda Graoui ,  Philip A. Bottini ,  Bernard L. Hwang ,  Lara Hawrylchak ,  Rene George

IPC: H01L21/3105 ,  H01L21/28 ,  H01L29/51

CPC classification number: H01L21/28176 ,  H01J37/321 ,  H01J37/32357 ,  H01J37/3244 ,  H01J37/32477 ,  H01L21/3105 ,  H01L29/517

Abstract: Embodiments described herein generally relate to a method and apparatus for plasma treating a process chamber. A substrate having a gate stack formed thereon may be placed in a process chamber, and hydrogen containing plasma may be used to treat the gate stack in order to cure the defects in the gate stack. As the result of hydrogen containing plasma treatment, the gate stack has lower leakage and improved reliability. To protect the process chamber from Hx+ ions and H* radicals generated by the hydrogen containing plasma, the process chamber may be treated with a plasma without the substrate placed therein and prior to the hydrogen containing plasma treatment. In addition, components of the process chamber that are made of a dielectric material may be coated with a ceramic coating including an yttrium containing oxide in order to protect the components from the plasma.

公开(公告)号：US11124878B2

公开(公告)日：2021-09-21

申请号：US16049239

申请日：2018-07-30

Applicant: Applied Materials, Inc.

Inventor： Kartik Shah ,  Vishwas Kumar Pandey ,  Kailash Pradhan ,  Sairaju Tallavarjula ,  Rene George ,  Eric Kihara Shono ,  Philip A. Bottini ,  Roger Curtis

IPC: C23C16/455 ,  C23C16/44 ,  H01L21/67 ,  C23C14/56

Abstract: A gas supply member includes a first side opposite a second side and an inner surface defining a first opening extending between the first and second sides. The gas supply member includes a third side orthogonal to the first side, the third side includes a first extension that has a face partially defining the second side, and the first extension includes a first plurality of holes extending through the first extension to the face. The gas supply member includes a fourth side opposite the third side, the fourth side includes a protrusion that has a face partially defining the second side. The gas supply member also includes a baffle disposed adjacent to the inner surface, the baffle includes a first portion extending from the inner surface and a second portion attached to the first portion, and the second portion orthogonal to the first portion and parallel to the third side.