公开(公告)号：US20220154337A1

公开(公告)日：2022-05-19

申请号：US16950096

申请日：2020-11-17

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/455 ,  C01B32/907 ,  C01B21/082 ,  C23C16/32 ,  C23C16/36 ,  C23C16/30 ,  C23C16/34

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US20220325412A1

公开(公告)日：2022-10-13

申请号：US17848600

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/455 ,  C01B32/907 ,  C01B21/082 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30 ,  C23C16/32

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US11359281B2

公开(公告)日：2022-06-14

申请号：US16752678

申请日：2020-01-26

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela Balseanu

IPC: C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  C23C16/06 ,  C23C16/02

Abstract: Methods of selectively forming SiCON films are described. In some embodiments, the methods comprise sequential exposure to a silicon halide, a mixture of alkanolamine and amine reactants and a deposition plasma. In some embodiments, the method further comprises pre-cleaning the target substrate to improve selectivity.

公开(公告)号：US20220307134A1

公开(公告)日：2022-09-29

申请号：US17840797

申请日：2022-06-15

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu

IPC: C23C16/455 ,  C23C16/36 ,  H01L29/78 ,  H01L21/02

Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

公开(公告)号：US20210388499A1

公开(公告)日：2021-12-16

申请号：US16897490

申请日：2020-06-10

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela Balseanu

IPC: C23C16/455 ,  C23C16/36 ,  H01L21/02 ,  H01L29/78

Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I) wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

公开(公告)号：US11970777B2

公开(公告)日：2024-04-30

申请号：US17848600

申请日：2022-06-24

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/32 ,  C01B21/082 ,  C01B32/907 ,  C23C16/30 ,  C23C16/34 ,  C23C16/36 ,  C23C16/455

CPC classification number: C23C16/45553 ,  C01B21/0828 ,  C01B32/907 ,  C23C16/308 ,  C23C16/325 ,  C23C16/345 ,  C23C16/36 ,  C23C16/45536

Abstract: Methods for atomic layer deposition (ALD) or plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X); and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.

公开(公告)号：US11713507B2

公开(公告)日：2023-08-01

申请号：US17840797

申请日：2022-06-15

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu

IPC: H01L21/02 ,  H01L29/78 ,  C23C16/455 ,  C23C16/36

CPC classification number: C23C16/45553 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/0228 ,  H01L21/02126 ,  H01L21/02219 ,  H01L21/02274 ,  H01L29/78

Abstract: Methods for plasma enhanced atomic layer deposition (PEALD) of low-κ films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formula (I)




wherein R1, R2, R3, R4, R5, and R6 are independently selected from hydrogen (H), substituted alkyl, or unsubstituted alkyl; purging the processing chamber of the silicon precursor; exposing the substrate to a carbon monoxide (CO) plasma to form one or more of a silicon oxycarbide (SiOC) or silicon oxycarbonitride (SiOCN) film on the substrate; and purging the processing chamber.

公开(公告)号：US20250037989A1

公开(公告)日：2025-01-30

申请号：US18907769

申请日：2024-10-07

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US12142475B2

公开(公告)日：2024-11-12

申请号：US17667704

申请日：2022-02-09

Applicant: Applied Materials, Inc.

Inventor： Ning Li ,  Shuaidi Zhang ,  Mihaela A. Balseanu ,  Qi Gao ,  Rajesh Prasad ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Deven Matthew Raj Mittal ,  Kyu-Ha Shim

IPC: H01L21/02 ,  C23C16/34 ,  C23C16/56 ,  H10B41/27 ,  H10B41/35 ,  H10B43/35 ,  H10B43/27

Abstract: Methods of manufacturing memory devices are provided. The methods improve the quality of a selectively deposited silicon-containing dielectric layer. The method comprises selectively depositing a silicon-containing dielectric layer in a recessed region of a film stack. The selectively deposited silicon-containing dielectric layer is then exposed to a high-density plasma and annealed at a temperature greater than 800 ° C. to provide a silicon-containing dielectric film having a wet etch rate of less than 4 Å/min.

公开(公告)号：US11447865B2

公开(公告)日：2022-09-20

申请号：US16950096

申请日：2020-11-17

Applicant: Applied Materials, Inc.

Inventor： Shuaidi Zhang ,  Ning Li ,  Mihaela A. Balseanu ,  Bhaskar Jyoti Bhuyan ,  Mark Saly ,  Thomas Knisley

IPC: C23C16/32 ,  C23C16/455 ,  C01B32/907 ,  C01B21/082 ,  C23C16/34 ,  C23C16/36 ,  C23C16/30

Abstract: Methods for atomic layer deposition (ALD) of plasma enhanced atomic layer deposition (PEALD) of low-K films are described. A method of depositing a film comprises exposing a substrate to a silicon precursor having the general formulae (Ia), (Ib), (Ic), (Id), (IX), or (X) wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide; and exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate, the oxidant comprising one or more of a carboxylic acid, an aldehyde, a ketone, an ethenediol, an oxalic acid, a glyoxylic acid, a peroxide, an alcohol, and a glyoxal.