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公开(公告)号：US10825708B2
公开(公告)日：2020-11-03
申请号：US13651354
申请日：2012-10-12
发明人： Valentin Todorow , Samer Banna , Imad Yousif , Albert Wang , Gary Leray
IPC分类号： H01L21/683 , H01J37/32 , H02N13/00
摘要： Process kit components for use with a substrate support of a process chamber are provided herein. In some embodiments, a process kit ring may include a ring shaped body having an outer edge, an inner edge, a top surface and a bottom, wherein the outer edge has a diameter of about 12.473 inches to about 12.479 inches and the inner edge has a diameter of about 11.726 inches to about 11.728 inches, and wherein the ring shaped body has a height of about 0.116 to about 0.118 inches; and a plurality of protrusions disposed on the top surface of the ring shaped body, each of the plurality of protrusions disposed symmetrically about the ring shaped body.
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公开(公告)号：US20190267213A1
公开(公告)日：2019-08-29
申请号：US15908065
申请日：2018-02-28
发明人： Gary Leray
IPC分类号： H01J37/32
摘要： Methods and apparatus for supplying radio frequency (RF) power to a process chamber. An RF generator is configured with a capability to operate with an RF power output independent of a reference frequency or synchronize the RF output power to the reference frequency. A clock ramp is used to change an RF power output frequency of the RF output power to match the reference frequency when the frequencies are in an unlocked state. When the RF power output frequency reaches the reference frequency, the RF power output can be locked to the reference frequency.
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3.发明授权Self-bias calculation on a substrate in a process chamber with bias power for single or multiple frequencies 有权在具有偏置功率的单个或多个频率的处理室中的衬底上的自偏置计算公开(公告)号：US09406540B2
公开(公告)日：2016-08-02
申请号：US13647624
申请日：2012-10-09
IPC分类号： H01L21/683 , G01R27/16 , G06F19/00
CPC分类号： H01L21/6833 , G06F19/00
摘要： Methods for calculating a self-bias on a substrate in a process chamber may include measuring a DC potential of a substrate disposed on a substrate support of a process chamber while providing a bias power from a power source to a cathode at a first frequency; measuring a voltage, current and phase shift at a matching network coupled to the power source while providing the bias power; calculating an effective impedance of the cathode by determining a linear relationship between a calculated voltage and the measured DC potential of the substrate; calculating a first linear coefficient and a second linear coefficient of the linear relationship between the calculated voltage and the measured DC potential of the substrate; and calculating a self bias on the substrate by utilizing the first linear coefficient, second linear coefficient, measured DC potential of the substrate, effective impedance, and measured phase shift.
摘要翻译： 用于计算处理室中的衬底上的自偏压的方法可以包括测量设置在处理室的衬底支撑件上的衬底的DC电位，同时以第一频率从电源向阴极提供偏置功率; 测量在耦合到电源的匹配网络处的电压，电流和相移，同时提供偏置功率; 通过确定所计算的电压和所测量的所述基板的DC电位之间的线性关系来计算所述阴极的有效阻抗; 计算所计算的电压与所测量的所述基板的DC电位之间的线性关系的第一线性系数和第二线性系数; 以及通过利用第一线性系数，第二线性系数，测量的衬底的DC电位，有效阻抗和测量的相移来计算衬底上的自偏压。
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公开(公告)号：US11177115B2
公开(公告)日：2021-11-16
申请号：US16429883
申请日：2019-06-03
发明人： Gary Leray , Valentin N. Todorow , James Rogers
IPC分类号： H01J37/32 , H01L21/67 , H01L21/3065 , H01L21/3213
摘要： Embodiments for the present application include methods and apparatus for operating a plasma enhanced substrate processing system using dual level pulsed radio frequency (RF) power. More specifically, embodiments of the present disclosure allow for frequency and power tuning in a process chamber using dual level pulsed power by using a tuning controller coupled to a matching network and/or a RF power generator. In one embodiment, a tuning system includes a tuning controller disposed in a tuning system, the tuning controller configured to tune dual level RF pulsing data from a RF power generator, wherein the tuning system is connectable to a plasma processing chamber, and a memory connecting to the tuning controller, wherein the tuning controller is configured to couple to a RF power generator and a matching network disposed in the plasma processing chamber.
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公开(公告)号：US10553400B2
公开(公告)日：2020-02-04
申请号：US15941151
申请日：2018-03-30
发明人： Gary Leray
摘要： Methods and apparatus for providing RF power to a semiconductor process chamber including generating an analog radio frequency (RF) power waveform with a frequency generator for transmission to a match network over a first connection, determining information associated with characteristics of the RF power waveform with the frequency generator and transmitting the information to the match network over a second connection, and adjusting the match network to the RF power waveform based, at least partially, on the information associated with characteristics of the RF power waveform from the second connection.
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公开(公告)号：US09595423B2
公开(公告)日：2017-03-14
申请号：US15068999
申请日：2016-03-14
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32183
摘要： Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.
摘要翻译： 本文提供了使用双电平脉冲功率的处理室中频率调谐的方法和装置。 在一些实施例中，用于频率调谐的方法可以包括：在第一频率被调整到第二频率的同时提供第一频率的第一脉冲功率，其中第一频率是第一脉冲功率处的最后已知的调谐频率， 频率作为第一脉冲功率处的最后已知的调谐频率，在第三频率被调整到第四频率时提供第二脉冲功率，其中第一脉冲功率和第二脉冲功率不同且不为零， 并且其中所述第三频率是所述第二脉冲功率处的最后已知的调谐频率，并且将所述第四频率存储为所述第二脉冲功率处的最后已知的调谐频率。
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公开(公告)号：US09318304B2
公开(公告)日：2016-04-19
申请号：US14537037
申请日：2014-11-10
CPC分类号： H01J37/32165 , H01J37/32082 , H01J37/32146 , H01J37/32155 , H01J37/32183
摘要： Methods and apparatus for frequency tuning in process chambers using dual level pulsed power are provided herein. In some embodiments, a method for frequency tuning may include providing a first pulsed power at a first frequency while the first frequency is adjusted to a second frequency, wherein the first frequency is a last known tuned frequency at the first pulsed power, storing the second frequency as the last known tuned frequency at the first pulsed power, providing a second pulsed power at a third frequency while the third frequency is adjusted to a fourth frequency, wherein the first pulsed power and the second pulsed power are different and non-zero, and wherein the third frequency is a last known tuned frequency at the second pulsed power, and storing the fourth frequency as the last known tuned frequency at the second pulsed power.
摘要翻译： 本文提供了使用双电平脉冲功率的处理室中频率调谐的方法和装置。 在一些实施例中，用于频率调谐的方法可以包括：在第一频率被调整到第二频率的同时提供第一频率的第一脉冲功率，其中第一频率是第一脉冲功率处的最后已知的调谐频率， 频率作为第一脉冲功率处的最后已知的调谐频率，在第三频率被调整到第四频率时提供第二脉冲功率，其中第一脉冲功率和第二脉冲功率不同且不为零， 并且其中所述第三频率是所述第二脉冲功率处的最后已知的调谐频率，并且将所述第四频率存储为所述第二脉冲功率处的最后已知的调谐频率。
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8.发明授权Extended and independent RF powered cathode substrate for extreme edge tunability 有权扩展和独立的RF供电阴极基板，用于极端边缘可调性公开(公告)号：US08988848B2
公开(公告)日：2015-03-24
申请号：US13651351
申请日：2012-10-12
发明人： Valentin Todorow , Samer Banna , Imad Yousif , Albert Wang , Gary Leray
IPC分类号： H01L21/683 , H02N13/00 , H01J37/32
CPC分类号： H01L21/6833 , H01J37/32642 , H01J37/32715 , H01L21/6831 , H02N13/00 , Y10T279/23
摘要： Apparatus for processing substrates are provided herein. In some embodiments, an apparatus for processing a substrate may include a substrate support comprising a first electrode disposed within the substrate support and having a peripheral edge and a first surface; a substrate support surface disposed above the first surface of the first electrode; and a second electrode disposed within the substrate support and extending radially beyond the peripheral edge of the first electrode, wherein the second electrode has a second surface disposed about and above the first surface of the first electrode.
摘要翻译： 本文提供了处理基板的设备。 在一些实施例中，用于处理衬底的设备可以包括衬底支撑件，其包括设置在衬底支撑件内并且具有周边边缘和第一表面的第一电极; 设置在第一电极的第一表面上方的衬底支撑表面; 以及第二电极，其设置在所述基板支撑件内并且径向延伸超过所述第一电极的周边边缘，其中所述第二电极具有设置在所述第一电极的第一表面周围和上方的第二表面。
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公开(公告)号：US10290469B2
公开(公告)日：2019-05-14
申请号：US14293516
申请日：2014-06-02
摘要： Embodiments of an apparatus having an improved coil antenna assembly that can provide enhanced plasma in a processing chamber is provided. The improved coil antenna assembly enhances positional control of plasma location within a plasma processing chamber, and may be utilized in etch, deposition, implant, and thermal processing systems, among other applications where the control of plasma location is desirable. In one embodiment, an electrode assembly configured to use in a semiconductor processing apparatus includes a RF conductive connector, and a conductive member having a first end electrically connected to the RF conductive connector, wherein the conductive member extends outward and vertically from the RF conductive connector.
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公开(公告)号：US09839109B1
公开(公告)日：2017-12-05
申请号：US15212485
申请日：2016-07-18
发明人： Gary Leray
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H05H2001/4645 , H05H2001/4667 , H05H2001/4682
摘要： Methods and apparatus for plasma processing are provided herein. The method for controlling current ratio in a substrate processing chamber may include (a) providing a first RF signal to a first RF coil and a second RF coil at a first current ratio set point and a first current operating mode, (b) determining a first dynamic control limit for the first current ratio set point based on a value of the first current ratio set point and the first current operating mode, (c) measuring an amount of current supplied to each of the first and second coils, (d) determining the actual current ratio based on the measured amounts of current supplied to each of the first and second coils, (e) determining whether the actual current ratio determined is within the dynamic control limits, and (f) repeating steps (b)-(e) until the actual current ratio determined is within the dynamic control limits.
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