-
公开(公告)号:US11508617B2
公开(公告)日:2022-11-22
申请号:US16662200
申请日:2019-10-24
发明人: Hao Jiang , Chi Lu , He Ren , Chi-I Lang , Ho-yung David Hwang , Mehul Naik
IPC分类号: H01L21/768 , H01L21/027 , H01L21/3213 , H01L21/306 , H01L21/203
摘要: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.
-
公开(公告)号:US20180358229A1
公开(公告)日:2018-12-13
申请号:US16002218
申请日:2018-06-07
发明人: Takehito Koshizawa , Eswaranand Venkatasubramanian , Pramit Manna , Chi Lu , Chi-I Lang , Nancy Fung , Abhijit Basu Mallick
IPC分类号: H01L21/308 , H01L21/311 , H01L21/02
CPC分类号: H01L21/3086 , C01B32/26 , C01B32/28 , H01L21/02115 , H01L21/02274 , H01L21/3081 , H01L21/31111
摘要: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.
-
公开(公告)号:US20230045689A1
公开(公告)日:2023-02-09
申请号:US17968201
申请日:2022-10-18
发明人: Hao Jiang , Chi Lu , He Ren , Chi-I Lang , Ho-yung David Hwang , Mehul Naik
IPC分类号: H01L21/768 , H01L21/3213 , H01L21/306 , H01L21/027
摘要: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.
-
公开(公告)号:US20210125864A1
公开(公告)日:2021-04-29
申请号:US16662200
申请日:2019-10-24
发明人: Hao Jiang , Chi Lu , He Ren , Chi-I Lang , Ho-yung David Hwang , Mehul Naik
IPC分类号: H01L21/768 , H01L21/027 , H01L21/203 , H01L21/306 , H01L21/3213
摘要: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.
-
公开(公告)号:US10954129B2
公开(公告)日:2021-03-23
申请号:US16002218
申请日:2018-06-07
发明人: Takehito Koshizawa , Eswaranand Venkatasubramanian , Pramit Manna , Chi Lu , Chi-I Lang , Nancy Fung , Abhijit Basu Mallick
IPC分类号: H01L21/02 , C01B32/28 , H01L21/308 , C01B32/26 , H01L21/311 , C01B32/25 , H01L21/033 , C23C16/26 , C23C16/505
摘要: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.
-
-
-
-