公开(公告)号：US11749532B2

公开(公告)日：2023-09-05

申请号：US17307383

申请日：2021-05-04

Applicant: Applied Materials, Inc.

Inventor： Hao Jiang ,  Chi Lu ,  He Ren ,  Mehul Naik

IPC: H01L21/3213 ,  H01L21/033 ,  H01J37/32 ,  H01L21/67 ,  H01L23/532

CPC classification number: H01L21/32136 ,  H01J37/32449 ,  H01L21/0332 ,  H01L21/32139 ,  H01L21/67069 ,  H01J37/32183 ,  H01J2237/3341 ,  H01L23/53242

Abstract: Methods and apparatus for processing a substrate are provided. For example, a method of processing a substrate comprises supplying oxygen (O2) into a processing volume of an etch chamber to react with a silicon-based hardmask layer atop a base layer of ruthenium to form a covering of an SiO-like material over the silicon-based hardmask layer and etching the base layer of ruthenium using at least one of O2 or chloride (Cl2) while supplying nitrogen (N2) to sputter some of the SiO-like material onto an exposed ruthenium sidewall created during etching.

公开(公告)号：US11508617B2

公开(公告)日：2022-11-22

申请号：US16662200

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Hao Jiang ,  Chi Lu ,  He Ren ,  Chi-I Lang ,  Ho-yung David Hwang ,  Mehul Naik

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/203

Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

公开(公告)号：US20180358229A1

公开(公告)日：2018-12-13

申请号：US16002218

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Chi Lu ,  Chi-I Lang ,  Nancy Fung ,  Abhijit Basu Mallick

IPC: H01L21/308 ,  H01L21/311 ,  H01L21/02

CPC classification number: H01L21/3086 ,  C01B32/26 ,  C01B32/28 ,  H01L21/02115 ,  H01L21/02274 ,  H01L21/3081 ,  H01L21/31111

Abstract: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.

公开(公告)号：US20230045689A1

公开(公告)日：2023-02-09

申请号：US17968201

申请日：2022-10-18

Applicant: Applied Materials, Inc.

Inventor： Hao Jiang ,  Chi Lu ,  He Ren ,  Chi-I Lang ,  Ho-yung David Hwang ,  Mehul Naik

IPC: H01L21/768 ,  H01L21/3213 ,  H01L21/306 ,  H01L21/027

Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

公开(公告)号：US20210125864A1

公开(公告)日：2021-04-29

申请号：US16662200

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Hao Jiang ,  Chi Lu ,  He Ren ,  Chi-I Lang ,  Ho-yung David Hwang ,  Mehul Naik

IPC: H01L21/768 ,  H01L21/027 ,  H01L21/203 ,  H01L21/306 ,  H01L21/3213

Abstract: A method of forming an interconnect structure for semiconductor devices is described. The method comprises etching a patterned interconnect stack for form first conductive lines and expose a top surface of a first etch stop layer; etching the first etch stop layer to form second conductive lines and expose a top surface of a barrier layer; and forming a self-aligned via.

公开(公告)号：US10954129B2

公开(公告)日：2021-03-23

申请号：US16002218

申请日：2018-06-07

Applicant: Applied Materials, Inc.

Inventor： Takehito Koshizawa ,  Eswaranand Venkatasubramanian ,  Pramit Manna ,  Chi Lu ,  Chi-I Lang ,  Nancy Fung ,  Abhijit Basu Mallick

IPC: H01L21/02 ,  C01B32/28 ,  H01L21/308 ,  C01B32/26 ,  H01L21/311 ,  C01B32/25 ,  H01L21/033 ,  C23C16/26 ,  C23C16/505

Abstract: A method of fabricating a semiconductor structure is described. The method comprises forming at least one mandrel on a substrate, the at least one mandrel comprising a diamond-like carbon and having a top and two opposing sidewalls, the diamond-like carbon comprising at least 40% sp3 hybridized carbon atoms. The mandrel may be used in Self-Aligned Multiple Patterning (SAMP) processes.