公开(公告)号：US20140017518A1

公开(公告)日：2014-01-16

申请号：US14029248

申请日：2013-09-17

Applicant: APPLIED MATERIALS, INC.

Inventor： Steven VERHAVERBEKE ,  Omkaram NALAMASU ,  Majeed A. FOAD ,  Mahalingam VENKATESAN ,  Nety M. KRISHNA

IPC: G11B5/84

CPC classification number: G11B5/84 ,  C23C14/185 ,  C23C14/48 ,  C23C14/5826 ,  C23C14/5833 ,  G11B5/855 ,  H01J2237/3365

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract translation: 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。

公开(公告)号：US20140083363A1

公开(公告)日：2014-03-27

申请号：US14047384

申请日：2013-10-07

Applicant: Applied Materials, Inc.

Inventor： Omkaram NALAMASU ,  Steven VERHAVERBEKE ,  Majeed A. FOAD ,  Mahalingam VENKATESAN ,  Nety M. KRISHNA

IPC: G11B5/84

CPC classification number: G11B5/84 ,  B82Y10/00 ,  G11B5/743 ,  G11B5/746 ,  G11B5/82 ,  G11B5/855 ,  H01F41/34

Abstract: A method for patterning a magnetic thin film on a substrate includes: providing a pattern about the magnetic thin film, with selective regions of the pattern permitting penetration of energized ions of one or more elements. Energized ions are generated with sufficient energy to penetrate selective regions and a portion of the magnetic thin film adjacent the selective regions. The substrate is placed to receive the energized ions. The portion of the magnetic thin film is subjected to thermal excitation. The portions of the magnetic thin film are rendered to exhibit a magnetic property different than selective other portions. A method for patterning a magnetic media with a magnetic thin film on both sides of the media is also disclosed.

Abstract translation: 用于在衬底上图案化磁性薄膜的方法包括：提供围绕磁性薄膜的图案，该图案的选择区域允许一个或多个元件的激发离子的穿透。 通过足够的能量产生通电的离子以穿透选择区域和一部分与选择区域相邻的磁性薄膜。 放置基板以接收通电离子。 磁性薄膜的一部分经受热激发。 使磁性薄膜的部分呈现与选择性其他部分不同的磁性。 还公开了在介质两侧用磁性薄膜图案化磁性介质的方法。

公开(公告)号：US20140072876A1

公开(公告)日：2014-03-13

申请号：US14016879

申请日：2013-09-03

Applicant: Applied Materials, Inc.

Inventor： Victor L. PUSHPARAJ ,  Omkaram NALAMASU ,  Steven VERHAVERBEKE

IPC: H01G11/36 ,  H01M4/36 ,  H01M4/1393 ,  H01M4/1395

CPC classification number: H01M4/364 ,  B82Y99/00 ,  C23C16/24 ,  C23C16/44 ,  C23C16/54 ,  C23C28/00 ,  C25D11/005 ,  C25D11/32 ,  H01G11/28 ,  H01G11/36 ,  H01G11/86 ,  H01L21/67173 ,  H01L21/67184 ,  H01L21/6776 ,  H01M4/0428 ,  H01M4/0438 ,  H01M4/0442 ,  H01M4/0492 ,  H01M4/133 ,  H01M4/134 ,  H01M4/1393 ,  H01M4/1395 ,  H01M4/366 ,  H01M4/38 ,  H01M4/386 ,  H01M4/587 ,  H01M4/661 ,  H01M10/0525 ,  Y02E60/122 ,  Y02E60/13 ,  Y02P70/54 ,  Y10T29/41 ,  Y10T29/417

Abstract: Embodiments of the present invention generally relate to methods and apparatus for forming an energy storage device. More particularly, embodiments described herein relate to methods of forming electric batteries and electrochemical capacitors. In one embodiment a method of forming a high surface area electrode for use in an energy storage device is provided. The method comprises forming an amorphous silicon layer on a current collector having a conductive surface, immersing the amorphous silicon layer in an electrolytic solution to form a series of interconnected pores in the amorphous silicon layer, and forming carbon nanotubes within the series of interconnected pores of the amorphous silicon layer.

Abstract translation: 本发明的实施例一般涉及用于形成能量存储装置的方法和装置。 更具体地，本文所述的实施例涉及形成电池和电化学电容器的方法。 在一个实施例中，提供了形成用于能量存储装置的高表面积电极的方法。 该方法包括在具有导电表面的集电器上形成非晶硅层，将非晶硅层浸入电解溶液中以在非晶硅层中形成一系列互连的孔，并在该系列互连孔内形成碳纳米管 非晶硅层。

公开(公告)号：US20160064197A1

公开(公告)日：2016-03-03

申请号：US14939787

申请日：2015-11-12

Applicant: Applied Materials, Inc.

Inventor： Banqiu WU ,  Ajay KUMAR ,  Kartik RAMASWAMY ,  Omkaram NALAMASU

IPC: H01J37/32

CPC classification number: H01J37/32669 ,  H01J37/32009 ,  H01J37/32422 ,  H01J37/3244 ,  H01L21/0273 ,  H01L21/31144

Abstract: The present disclosure provides methods and an apparatus for controlling and modifying line width roughness (LWR) of a photoresist layer with enhanced electron spinning control. In one embodiment, an apparatus for controlling a line width roughness of a photoresist layer disposed on a substrate includes a processing chamber having a chamber body having a top wall, side wall and a bottom wall defining an interior processing region, a support pedestal disposed in the interior processing region of the processing chamber, and a plasma generator source disposed in the processing chamber operable to provide predominantly an electron beam source to the interior processing region.

Abstract translation: 本公开提供了通过增强的电子纺丝控制来控制和修改光致抗蚀剂层的线宽粗糙度（LWR）的方法和装置。 在一个实施例中，用于控制设置在基板上的光致抗蚀剂层的线宽粗糙度的装置包括处理室，该处理室具有室主体，该室主体具有限定内部处理区域的顶壁，侧壁和底壁， 处理室的内部处理区域和设置在处理室中的等离子体发生器源，其可操作以主要向内部处理区域提供电子束源。

公开(公告)号：US20140178728A1

公开(公告)日：2014-06-26

申请号：US14190957

申请日：2014-02-26

Applicant: Applied Materials, Inc.

Inventor： Omkaram NALAMASU ,  Steven VERHAVERBEKE

IPC: H01G9/048 ,  H01M10/0587 ,  H01M4/04 ,  H01M4/134

CPC classification number: H01G9/048 ,  C25D11/32 ,  H01G9/0032 ,  H01G9/055 ,  H01G9/07 ,  H01G11/26 ,  H01G11/28 ,  H01G11/86 ,  H01M4/0404 ,  H01M4/134 ,  H01M10/0587 ,  Y02E60/13

Abstract: A method of fabricating an energy storage device with a large surface area electrode comprises: providing an electrically conductive substrate; depositing a semiconductor layer on the electrically conductive substrate, the semiconductor layer being a first electrode; anodizing the semiconductor layer, wherein the anodization forms pores in the semiconductor layer, increasing the surface area of the first electrode; after the anodization, providing an electrolyte and a second electrode to form the energy storage device. The substrate may be a continuous film and the electrode of the energy storage device may be fabricated using linear processing tools. The semiconductor may be silicon and the deposition tool may be a thermal spray tool. Furthermore, the semiconductor layer may be amorphous. The energy storage device may be rolled into a cylindrical shape. The energy storage device may be a battery, a capacitor or an ultracapacitor.

Abstract translation: 一种制造具有大表面积电极的能量存储装置的方法包括：提供导电基板; 在所述导电基板上沉积半导体层，所述半导体层是第一电极; 阳极氧化半导体层，其中阳极氧化在半导体层中形成孔，增加第一电极的表面积; 在阳极氧化之后，提供电解质和第二电极以形成能量存储装置。 衬底可以是连续膜，并且可以使用线性加工工具来制造能量存储装置的电极。 半导体可以是硅，并且沉积工具可以是热喷涂工具。 此外，半导体层可以是无定形的。 储能装置可以卷成圆柱形。 储能装置可以是电池，电容器或超级电容器。