公开(公告)号：US09793132B1

公开(公告)日：2017-10-17

申请号：US15154790

申请日：2016-05-13

Applicant: APPLIED MATERIALS, INC.

Inventor： Wenguang Li ,  James S. Papanu ,  Ramesh Krishnamurthy ,  Prabhat Kumar ,  Brad Eaton ,  Ajay Kumar ,  Alexander N. Lerner

IPC: H01L21/00 ,  H01L21/308 ,  H01L21/78 ,  H01L21/3065

CPC classification number: H01L21/3086 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/78

Abstract: Etch masks and methods of dicing semiconductor wafers are described. In an example, an etch mask for a wafer singulation process includes a water-soluble matrix based on a solid component and water. The etch mask also includes a plurality of particles dispersed throughout the water-soluble matrix. The plurality of particles has an average diameter approximately in the range of 5-100 nanometers. A ratio of weight % of the solid component to weight % of the plurality of particles is approximately in the range of 1:0.1-1:4.

公开(公告)号：US11289352B2

公开(公告)日：2022-03-29

申请号：US16662625

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Ramesh Krishnamurthy ,  Lakshmanan Karuppiah

IPC: H01L21/67 ,  G05B19/418 ,  G01N21/84 ,  G01N21/35 ,  G01J5/00 ,  G01B11/06 ,  G01N21/3563 ,  H01L21/687

Abstract: Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

公开(公告)号：US11908718B2

公开(公告)日：2024-02-20

申请号：US17677402

申请日：2022-02-22

Applicant: Applied Materials, Inc.

Inventor： Ramesh Krishnamurthy ,  Lakshmanan Karuppiah

IPC: H01L21/67 ,  H01L21/687 ,  G05B19/418 ,  G01N21/84 ,  G01J5/00 ,  G01B11/06 ,  G01N21/3563 ,  H01L21/66 ,  H01L21/683

CPC classification number: H01L21/67276 ,  G01B11/0691 ,  G01J5/0022 ,  G01N21/3563 ,  G01N21/84 ,  G05B19/41875 ,  H01L21/67242 ,  H01L21/67253 ,  H01L21/68764 ,  H01L21/68771 ,  H01L22/12 ,  H01L22/26 ,  G01N2021/3568 ,  G05B2219/40066 ,  H01L21/683 ,  H01L22/24

Abstract: Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

公开(公告)号：US20200335369A1

公开(公告)日：2020-10-22

申请号：US16662625

申请日：2019-10-24

Applicant: Applied Materials, Inc.

Inventor： Ramesh Krishnamurthy ,  Lakshmanan Karuppiah

IPC: H01L21/67 ,  G05B19/418 ,  G01N21/84 ,  G01N21/3563 ,  G01J5/00 ,  G01B11/06

Abstract: Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.

公开(公告)号：US20220181179A1

公开(公告)日：2022-06-09

申请号：US17677402

申请日：2022-02-22

Applicant: Applied Materials, Inc.

Inventor： Ramesh Krishnamurthy ,  Lakshmanan Karuppiah

IPC: H01L21/67 ,  G05B19/418 ,  G01N21/84 ,  G01J5/00 ,  G01B11/06 ,  G01N21/3563 ,  H01L21/687

Abstract: Methods and apparatus for the in-situ measurement of metrology parameters are disclosed herein. Some embodiments of the disclosure further provide for the real-time adjustment of process parameters based on the measure metrology parameters. Some embodiments of the disclosure provide for a multi-stage processing chamber top plate with one or more sensors between process stations.