公开(公告)号：US20210017665A1

公开(公告)日：2021-01-21

申请号：US16513434

申请日：2019-07-16

Applicant: Applied Materials, Inc.

Inventor： Sam Lee ,  Kyle M. Hanson ,  Eric J. Bergman

IPC: C25D21/08 ,  C25D17/00 ,  H01L21/67 ,  H01L21/02

Abstract: Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.

公开(公告)号：US20190301049A1

公开(公告)日：2019-10-03

申请号：US16370265

申请日：2019-03-29

Applicant: Applied Materials, Inc.

Inventor： Nolan Zimmerman ,  Greg Wilson ,  Andrew Anten ,  Richard W. Plavidal ,  Eric J. Bergman ,  Tricia Youngbull ,  Timothy Gale Stolt ,  Sam Lee

IPC: C25D21/08 ,  C25D5/48 ,  C25D7/12 ,  H01L21/02 ,  H01L21/288

Abstract: Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.

公开(公告)号：US11788200B2

公开(公告)日：2023-10-17

申请号：US17735464

申请日：2022-05-03

Applicant: Applied Materials, Inc.

Inventor： Sam Lee ,  Kyle M. Hanson ,  Eric J. Bergman

IPC: C25D17/00 ,  C25D21/08 ,  H01L21/02 ,  H01L21/67

CPC classification number: C25D21/08 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/6715

Abstract: Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

公开(公告)号：US20220259756A1

公开(公告)日：2022-08-18

申请号：US17735464

申请日：2022-05-03

Applicant: Applied Materials, Inc.

Inventor： Sam Lee ,  Kyle M. Hanson ,  Eric J. Bergman

IPC: C25D21/08 ,  H01L21/02 ,  H01L21/67 ,  C25D17/00

Abstract: Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath.

公开(公告)号：US09922874B2

公开(公告)日：2018-03-20

申请号：US15200836

申请日：2016-07-01

Applicant: APPLIED MATERIALS, INC.

Inventor： Prayudi Lianto ,  Sam Lee ,  Charles Sharbono ,  Marvin Louis Bernt ,  Guan Huei See ,  Arvind Sundarrajan

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/522

CPC classification number: H01L21/76879 ,  H01L21/76804 ,  H01L21/76873 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53238 ,  H01L23/5329

Abstract: A method of processing a semiconductor substrate includes: immersing a substrate in a first bath, wherein the substrate comprises a barrier layer, a conductive seed layer, and a patterned photoresist layer defining an opening; providing a first electric current between the conductive seed layer and a first anode disposed in electrical contact with the first bath to deposit a conductive material within the opening; stripping the patterned photoresist layer; immersing the substrate in a second bath; providing a second electric current that is a reverse of the first electric current between the conductive seed layer plus the conductive material and a second anode disposed in electrical contact with the second bath; etching the conductive seed layer from atop a field region of the barrier layer; and etching the barrier layer from atop a field region of the substrate.

公开(公告)号：US11814744B2

公开(公告)日：2023-11-14

申请号：US16370265

申请日：2019-03-29

Applicant: Applied Materials, Inc.

Inventor： Nolan Zimmerman ,  Gregory J. Wilson ,  Andrew Anten ,  Richard W. Plavidal ,  Eric J. Bergman ,  Tricia Youngbull ,  Timothy Gale Stolt ,  Sam Lee

IPC: C25D21/08 ,  C25D5/48 ,  H01L21/02 ,  C25D7/12 ,  C25D17/00 ,  H01L21/288

CPC classification number: C25D21/08 ,  C25D5/48 ,  C25D7/12 ,  C25D17/001 ,  H01L21/02068 ,  H01L21/2885

Abstract: Systems for cleaning electroplating system components may include an electroplating apparatus including a plating bath vessel. The electroplating apparatus may include a rinsing frame extending above the plating bath vessel. The rinsing frame may include a rim extending circumferentially about an upper surface of the plating bath vessel and defining a rinsing channel between the rim and the upper surface of the plating bath vessel. The electroplating apparatus may also include a rinsing assembly including a splash guard that is translatable from a recessed first position to a second position extending at least partially across an access to the plating bath vessel. The rinsing assembly may also include a fluid nozzle extending from the rinsing frame.

公开(公告)号：US11352711B2

公开(公告)日：2022-06-07

申请号：US16513434

申请日：2019-07-16

Applicant: Applied Materials, Inc.

Inventor： Sam Lee ,  Kyle M. Hanson ,  Eric J. Bergman

IPC: C25D21/08 ,  H01L21/02 ,  H01L21/67 ,  C25D17/00

Abstract: Cleaning substrates or electroplating system components may include methods of rinsing a substrate at a semiconductor plating chamber. The methods may include moving a head from a plating bath to a first position. The head may include a substrate coupled with the head. The methods may include rotating the head for a first period of time to sling bath fluid back into the plating bath. A residual amount of bath fluid may remain. The methods may include delivering a first fluid to the substrate from a first fluid nozzle to at least partially expel the residual amount of bath fluid back into the plating bath. The methods may include moving the head to a second position. The methods may include rotating the head for a second period of time. The methods may also include delivering a second fluid across the substrate from a second fluid nozzle.