公开(公告)号：US11661652B2

公开(公告)日：2023-05-30

申请号：US16412798

申请日：2019-05-15

申请人： Applied Materials, Inc.

发明人： Gang Peng ,  Halbert Chong ,  Marcus Pereira ,  David W. Groechel

IPC分类号： C23C16/44 ,  B08B7/02 ,  H01L21/67 ,  H01J37/32

CPC分类号： C23C16/4407 ,  B08B7/028 ,  H01J37/32449 ,  H01J37/32862 ,  H01L21/67253 ,  H01J2237/335 ,  H01J2237/3321

摘要： Embodiments described herein relate to a gas line cleaning system and a method of cleaning gas lines. The gas line cleaning system includes a connector having a first end and a second end, and a fluid system. The fluid system includes a fluid source configured to flow a fluid through a fluid conduit connected to the first end, and an ultrasonic transducer coupled to the fluid conduit configured to apply an ultrasonic energy to the fluid conduit to agitate the fluid. The ultrasonic energy creates a mechanical energy that reverberates in the fluid conduit and propagates into the fluid to remove particles that may have formed on an inside surface of a gas line connected to the second end and carry away particles inside the gas line.

公开(公告)号：US11289312B2

公开(公告)日：2022-03-29

申请号：US16438560

申请日：2019-06-12

申请人： APPLIED MATERIALS, INC.

发明人： Adolph M. Allen ,  Vanessa Faune ,  Zhong Qiang Hua ,  Kirankumar Neelasandra Savandaiah ,  Anantha K. Subramani ,  Philip A. Kraus ,  Tza-Jing Gung ,  Lei Zhou ,  Halbert Chong ,  Vaibhav Soni ,  Kishor Kalathiparambil

IPC分类号： H01J37/32 ,  H01J37/34 ,  C23C16/455 ,  C23C14/54

摘要： Embodiments of process kit shields and process chambers incorporating same are provided herein. In some embodiments a process kit configured for use in a process chamber for processing a substrate includes a shield having a cylindrical body having an upper portion and a lower portion; an adapter section configured to be supported on walls of the process chamber and having a resting surface to support the shield; and a heater coupled to the adapter section and configured to be electrically coupled to at least one power source of the processes chamber to heat the shield.

公开(公告)号：US11251024B2

公开(公告)日：2022-02-15

申请号：US16933926

申请日：2020-07-20

申请人： Applied Materials, Inc.

发明人： Hsin-wei Tseng ,  Casey Jane Madsen ,  Yikai Chen ,  Irena Wysok ,  Halbert Chong

IPC分类号： H01J37/32 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34 ,  C23C14/34

摘要： Embodiments generally relate to a chamber component to be used in plasma processing chambers for semiconductor or display processing. In one embodiment, a chamber component includes a textured surface having a surface roughness ranging from about 150 microinches to about 450 microinches and a coating layer disposed on the textured surface. The coating layer may be a silicon layer having a purity ranging from about 90 weight percent to about 99 weight percent, a thickness ranging from about 50 microns to about 500 microns, and an electrical resistivity ranging from about 1 E-3 ohm*m to about 1 E3 ohm*m. The coating layer provides strong adhesion for materials deposited in the plasma processing chamber, which reduces the materials peeling from the chamber component. The coating layer also enables oxygen plasma cleaning for further reducing materials deposited on the chamber component and provides the protection of the textured surface located therebelow.

公开(公告)号：US11249390B2

公开(公告)日：2022-02-15

申请号：US16777198

申请日：2020-01-30

申请人： Applied Materials, Inc.

发明人： Shuwei Liu ,  Vibhu Jindal ,  Halbert Chong

IPC分类号： G03F1/24

摘要： Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium, germanium and antimony.

公开(公告)号：US11473189B2

公开(公告)日：2022-10-18

申请号：US16787569

申请日：2020-02-11

申请人： Applied Materials, Inc.

发明人： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/35 ,  C23C14/06

摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：US20200249557A1

公开(公告)日：2020-08-06

申请号：US16777198

申请日：2020-01-30

申请人： Applied Materials, Inc.

发明人： Shuwei Liu ,  Vibhu Jindal ,  Halbert Chong

IPC分类号： G03F1/22

摘要： Extreme ultraviolet (EUV) mask blanks, methods for their manufacture and production systems therefor are disclosed. The EUV mask blanks comprise a substrate; a multilayer stack of reflective layers on the substrate; a capping layer on the multilayer stack of reflecting layers; and an absorber layer on the capping layer, the absorber layer made from tellurium, germanium and antimony.

公开(公告)号：US11932934B2

公开(公告)日：2024-03-19

申请号：US17941137

申请日：2022-09-09

申请人： Applied Materials, Inc.

发明人： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC分类号： C23C14/54 ,  C23C14/06 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/54 ,  C23C14/0605 ,  C23C14/35 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3467 ,  H01J37/3455 ,  H01J2237/002 ,  H01J2237/332

摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：US11898236B2

公开(公告)日：2024-02-13

申请号：US17506075

申请日：2021-10-20

申请人： Applied Materials, Inc.

发明人： Zhiyong Wang ,  Halbert Chong ,  John C. Forster ,  Irena H. Wysok ,  Tiefeng Shi ,  Gang Fu ,  Renu Whig ,  Keith A Miller ,  Sundarapandian Ramalinga Vijayalakshmi Reddy ,  Jianxin Lei ,  Rongjun Wang ,  Tza-Jing Gung ,  Kirankumar Neelasandra Savandaiah ,  Avinash Nayak ,  Lei Zhou

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/50

CPC分类号： C23C14/345 ,  C23C14/3485 ,  H01J37/32027 ,  H01J37/32091 ,  H01J37/32174 ,  C23C14/50

摘要： Methods and apparatus for processing a substrate are provided herein. For example, a processing chamber for processing a substrate comprises a sputtering target, a chamber wall at least partially defining an inner volume within the processing chamber and connected to ground, a power source comprising an RF power source, a process kit surrounding the sputtering target and a substrate support, an auto capacitor tuner (ACT) connected to ground and the sputtering target, and a controller configured to energize the cleaning gas disposed in the inner volume of the processing chamber to create the plasma and tune the sputtering target using the ACT to maintain a predetermined potential difference between the plasma in the inner volume and the process kit during the etch process to remove sputtering material from the process kit, wherein the predetermined potential difference is based on a resonant point of the ACT.

公开(公告)号：US20230002885A1

公开(公告)日：2023-01-05

申请号：US17941137

申请日：2022-09-09

申请人： Applied Materials, Inc.

发明人： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/06 ,  C23C14/35

摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.

公开(公告)号：US20200255938A1

公开(公告)日：2020-08-13

申请号：US16787569

申请日：2020-02-11

申请人： Applied Materials, Inc.

发明人： Halbert Chong ,  Lei Zhou ,  Adolph Miller Allen ,  Vaibhav Soni ,  Kishor Kalathiparambil ,  Vanessa Faune ,  Song-Moon Suh

IPC分类号： C23C14/54 ,  H01J37/34 ,  C23C14/35 ,  C23C14/06

摘要： Physical vapor deposition methods for reducing the particulates deposited on the substrate are disclosed. The pressure during sputtering can be increased to cause agglomeration of the particulates formed in the plasma. The agglomerated particulates can be moved to an outer portion of the process chamber prior to extinguishing the plasma so that the agglomerates fall harmlessly outside of the diameter of the substrate.