公开(公告)号：US10937726B1

公开(公告)日：2021-03-02

申请号：US16746681

申请日：2020-01-17

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Kyuil Cho ,  Kurtis Leschkies ,  Roman Gouk ,  Chintan Buch ,  Vincent DiCaprio

IPC: H01L23/498 ,  H01L23/14 ,  H01L21/48

Abstract: The present disclosure relates to semiconductor core assemblies and methods of forming the same. The semiconductor core assemblies described herein may be utilized to form semiconductor package assemblies, PCB assemblies, PCB spacer assemblies, chip carrier assemblies, intermediate carrier assemblies (e.g., for graphics cards), and the like. In one embodiment, a silicon substrate core is structured by direct laser patterning. One or more conductive interconnections are formed in the substrate core and one or more redistribution layers are formed on surfaces thereof. The silicon substrate core may thereafter be utilized as a core structure for a semiconductor package, PCB, PCB spacer, chip carrier, intermediate carrier, or the like.

公开(公告)号：US11887934B2

公开(公告)日：2024-01-30

申请号：US18075141

申请日：2022-12-05

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent DiCaprio ,  Kyuil Cho

IPC: H01L23/495 ,  H01L23/538 ,  H01L21/48 ,  H01L23/13 ,  H01L23/14 ,  H01L23/498 ,  H01L25/10 ,  H01L23/66 ,  H01Q1/22 ,  H01Q1/24 ,  H05K1/02 ,  H01L21/50 ,  H01L21/768 ,  H01L25/065 ,  H01L27/06 ,  H01L21/60

CPC classification number: H01L23/5389 ,  H01L21/486 ,  H01L21/4864 ,  H01L21/50 ,  H01L21/76802 ,  H01L23/13 ,  H01L23/147 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49866 ,  H01L23/49894 ,  H01L23/5384 ,  H01L23/5385 ,  H01L23/5386 ,  H01L23/66 ,  H01L25/0657 ,  H01L25/105 ,  H01L27/0688 ,  H01Q1/2283 ,  H01Q1/243 ,  H05K1/0243 ,  H01L2021/60007 ,  H01L2225/107 ,  H01L2225/1035

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.

公开(公告)号：US10886232B2

公开(公告)日：2021-01-05

申请号：US16746711

申请日：2020-01-17

Applicant: Applied Materials, Inc.

Inventor： Han-Wen Chen ,  Steven Verhaverbeke ,  Giback Park ,  Giorgio Cellere ,  Diego Tonini ,  Vincent DiCaprio ,  Kyuil Cho

IPC: H01L23/495 ,  H01L23/538 ,  H01L23/498 ,  H01L21/48 ,  H01L23/14 ,  H01L25/10 ,  H01L23/13

Abstract: The present disclosure relates to methods and apparatus for forming a thin-form-factor semiconductor package. In one embodiment, a glass or silicon substrate is structured by micro-blasting or laser ablation to form structures for formation of interconnections therethrough. The substrate is thereafter utilized as a frame for forming a semiconductor package with embedded dies therein.