公开(公告)号：US20240183035A1

公开(公告)日：2024-06-06

申请号：US17991931

申请日：2022-11-22

申请人： Applied Materials, Inc. ,  National University of Singapore

发明人： Xinke Wang ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Bhaskar Jyoti Bhuyan ,  Jiecong Tang ,  John Sudijono ,  Long Liu

IPC分类号： C23C16/455 ,  C23C16/02 ,  C23C16/04

CPC分类号： C23C16/45553 ,  C23C16/0272 ,  C23C16/045

摘要： Methods of selectively depositing a selectively deposited layer are described. Exemplary processing methods may include treating a substrate comprising a non-hydroxyl-containing surface and a second surface with one or more of ozone, hydrogen peroxide, or a hydrogen plasma to passivate the second surface. In one or more embodiments, a selectively deposited layer is then selectively deposited on the non-hydroxyl-containing surface and not on the second surface by flowing a first precursor over the substrate to form a first portion of an initial carbon-containing film on the non-hydroxyl-containing surface and not on the second surface. The methods may include removing a first precursor effluent from the substrate. A second precursor may then be flowed over the substrate to react with the first portion of the initial selectively deposited layer. The methods may include removing a second precursor effluent from the substrate.

公开(公告)号：US12110584B2

公开(公告)日：2024-10-08

申请号：US17361231

申请日：2021-06-28

申请人： Applied Materials, Inc.

发明人： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC分类号： C23C16/30 ,  C23C16/04 ,  C23C16/06 ,  C23C16/448 ,  H01L21/02

CPC分类号： C23C16/305 ,  C23C16/04 ,  C23C16/06 ,  C23C16/4485 ,  H01L21/0228

摘要： Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US20240282632A1

公开(公告)日：2024-08-22

申请号：US18109365

申请日：2023-02-14

申请人： Applied Materials, Inc.

发明人： Zachary J. Devereaux ,  Bhaskar Jyoti Bhuyan ,  Thomas Joseph Knisley ,  Zeqing Shen ,  Susmit Singha Roy ,  Mark J. Saly ,  Abhijit Basu Mallick

IPC分类号： H01L21/768 ,  C23C16/04 ,  C23C16/32 ,  C23C16/40 ,  C23C16/455 ,  H01L21/02

CPC分类号： H01L21/76897 ,  C23C16/042 ,  C23C16/32 ,  C23C16/402 ,  C23C16/45527 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/76802

摘要： A method includes selectively forming at least one passivation layer on at least one first conductive layer disposed in a first interlevel dielectric (ILD) layer, selectively forming at least one catalyst layer on the at least one passivation layer, wherein the at least one passivation layer prevents formation of the at least one catalyst layer on the first conductive layer, and selectively forming at least one supplemental dielectric layer using the at least one catalyst layer. The at least one catalyst layer induces formation of the at least one supplemental dielectric layer, and the at least one supplemental dielectric layer includes a dielectric material having a dielectric constant of less than or equal to about 4.

公开(公告)号：US12046468B2

公开(公告)日：2024-07-23

申请号：US16953569

申请日：2020-11-20

申请人： Applied Materials, Inc.

发明人： Huiyuan Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/02

CPC分类号： H01L21/02274 ,  H01L21/02211 ,  H01L21/0245 ,  H01L21/02532

摘要： Methods for depositing a silicon-germanium film on a substrate are described. The method comprises exposing a substrate to a silicon precursor and a germanium precursor to form a conformal silicon-germanium film. The substrate comprises at least one film stack and at least one feature, the film stack comprising alternating layers of silicon and silicon-germanium. The silicon-germanium film has a conformality greater than 50%.

公开(公告)号：US12018364B2

公开(公告)日：2024-06-25

申请号：US17119655

申请日：2020-12-11

申请人： Applied Materials, Inc.

发明人： Huiyuan Wang ,  Susmit Singha Roy ,  Takehito Koshizawa ,  Bo Qi ,  Abhijit Basu Mallick

IPC分类号： C23C16/40

CPC分类号： C23C16/407

摘要： Methods for forming coating films comprising germanium oxide are disclosed. In some embodiments, the films are super-conformal to a feature on the surface of a substrate. The films are deposited by exposing a substrate surface to a germane precursor and an oxidant simultaneously. The germane precursor may be flowed intermittently. The substrate may also be exposed to a second oxidant to increase the relative concentration of oxygen within the super-conformal film.

公开(公告)号：US20230058831A1

公开(公告)日：2023-02-23

申请号：US17407533

申请日：2021-08-20

申请人： Applied Materials, Inc.

发明人： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/02 ,  H01L21/3213 ,  H01L21/56

摘要： Exemplary methods of semiconductor processing may include etching one or more features partially through a stack of layers formed on a substrate. The methods may include halting the etching prior to penetrating fully through the stack of layers formed on the substrate. The methods may include forming a layer of carbon-containing material along the stack of layers on the substrate. The layer of carbon-containing material may include a metal. The methods may include etching the one or more features fully through the stack of layers on the substrate.

公开(公告)号：US20230057258A1

公开(公告)日：2023-02-23

申请号：US17407504

申请日：2021-08-20

申请人： Applied Materials, Inc.

发明人： Bhaskar Jyoti Bhuyan ,  Zeqing Shen ,  Susmit Singha Roy ,  Abhijit Basu Mallick

IPC分类号： H01L21/768 ,  H01L21/311

摘要： Exemplary methods of semiconductor processing may include forming a layer of carbon-containing material on a substrate disposed within a processing region of a semiconductor processing chamber. The substrate may include an exposed region of a first dielectric material and an exposed region of a metal-containing material. The layer of carbon-containing material may be selectively formed over the exposed region of the metal-containing material. Forming the layer of carbon-containing material may include one or more cycles of providing a first molecular species that selectively couples with the metal-containing material. Forming the layer of carbon-containing material may include providing a second molecular species that selectively couples with the first molecular species. The methods may include selectively depositing a second dielectric material on the exposed region of the first dielectric material.

公开(公告)号：US20220411918A1

公开(公告)日：2022-12-29

申请号：US17361231

申请日：2021-06-28

申请人： Applied Materials, Inc.

发明人： Chandan Das ,  Susmit Singha Roy ,  Bhaskar Jyoti Bhuyan ,  John Sudijono ,  Abhijit Basu Mallick ,  Mark Saly

IPC分类号： C23C16/30 ,  C23C16/06 ,  C23C16/448 ,  C23C16/04

摘要： Transition metal dichalcogenide films and methods for depositing transition metal dichalcogenide films on a substrate are described. Methods for converting transition metal oxide films to transition metal dichalcogenide films are also described. The substrate is exposed to a precursor and a chalcogenide reactant to form the transition metal dichalcogenide film. The exposures can be sequential or simultaneous.

公开(公告)号：US11430801B2

公开(公告)日：2022-08-30

申请号：US17227925

申请日：2021-04-12

申请人： APPLIED MATERIALS, INC.

发明人： Takehito Koshizawa ,  Mukund Srinivasan ,  Tomohiko Kitajima ,  Chang Seok Kang ,  Sung-Kwan Kang ,  Gill Y. Lee ,  Susmit Singha Roy

IPC分类号： H01L27/1157 ,  H01L27/11582

摘要： Methods and apparatus for forming a plurality of nonvolatile memory cells are provided herein. In some embodiments, the method, for example, includes forming a plurality of nonvolatile memory cells, comprising forming, on a substrate, a stack of alternating layers of metal including a first layer of metal and a second layer of metal different from the first layer of metal; removing the first layer of metal to form spaces between the alternating layers of the second layer of metal; and one of depositing a first layer of material to partially fill the spaces to leave air gaps therein or depositing a second layer of material to fill the spaces.

公开(公告)号：US20220216058A1

公开(公告)日：2022-07-07

申请号：US17142626

申请日：2021-01-06

申请人： Applied Materials, Inc.

发明人： Jialiang Wang ,  Susmit Singha Roy ,  Abhijit Basu Mallick ,  Nitin K. Ingle

IPC分类号： H01L21/285 ,  H01L23/532

摘要： Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor.