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1.发明授权Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效磁阻元件，磁头，磁存储单元和磁存储单元公开(公告)号：US07428130B2
公开(公告)日：2008-09-23
申请号：US11410315
申请日：2006-04-25
IPC分类号： G11B5/39
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译： 包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。 自由磁化层包括CoMnAl。 在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20）， 点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。
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2.发明申请Magnetoresistive element, magnetic head, magnetic storage unit, and magnetic memory unit 失效磁阻元件，磁头，磁存储单元和磁存储单元公开(公告)号：US20070268632A1
公开(公告)日：2007-11-22
申请号：US11410315
申请日：2006-04-25
IPC分类号： G11B5/127
CPC分类号： H01F10/3254 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11C11/16 , H01F10/3263 , H01F10/3272 , H01F10/3281 , H01L43/08
摘要： A CPP-type magnetoresistive element including a fixed magnetization layer, a non-magnetic metal layer, and a free magnetization layer that are stacked, and a diffusion prevention layer is disclosed. The free magnetization layer includes CoMnAl. The diffusion prevention layer is provided between the non-magnetic metal layer and the free magnetization layer so as to prevent Mn included in the free magnetization layer from diffusing into the non-magnetic metal layer. CoMnAl has a composition within the area formed by connecting Point A (44, 23, 33), Point B (48, 25, 27), Point C (60, 20, 20), Point D (65, 15, 20), Point E (65, 10, 25), Point F (60, 10, 30), and Point A with straight lines in this order in a ternary composition diagram where coordinates of the composition are expressed as (Co content, Mn content, Al content) with each of the Co, Mn, and Al contents being expressed in atomic percentage.
摘要翻译： 包括堆叠的固定磁化层，非磁性金属层和自由磁化层的CPP型磁阻元件，以及扩散防止层。 自由磁化层包括CoMnAl。 在非磁性金属层和自由磁化层之间设置扩散防止层，以防止包含在自由磁化层中的Mn扩散到非磁性金属层。 CoMnAl具有通过连接点A（44,23,33），点B（48,25,27），点C（60,20,20），点D（65,15,20）， 点E（65,10,25），点F（60,10,30），点A以直线表示，其组成的坐标表示为（Co含量，Mn含量，Al 含量），其中Co，Mn和Al中的每一种以原子百分比表示。
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3.发明申请CURRENT-PERPENDICULAR-TO-THE-PLANE STRUCTURE MAGNETORESISTIVE ELEMENT AND METHOD OF MAKING THE SAME AND STORAGE APPARATUS 审中-公开电流 - 平面结构磁阻元件及其制造方法和储存装置公开(公告)号：US20090141410A1
公开(公告)日：2009-06-04
申请号：US12209824
申请日：2008-09-12
申请人： Arata Jogo , Takahiro Ibusuki , Yutaka Shimizu
发明人： Arata Jogo , Takahiro Ibusuki , Yutaka Shimizu
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3906 , G11B2005/3996 , G11C11/161 , G11C11/1657 , G11C11/1659 , G11C11/1675
摘要： An electrically-conductive or insulating non-magnetic intermediate layer is inserted between a free magnetic layer and a pinned magnetic layer in a current-perpendicular-to-the-plane (CPP) structure magnetoresistive element. At least one of the free magnetic layer and the pinned magnetic layer is made of a nitrided magnetic metal alloy. This nitrided magnetic layers allows the CPP structure magnetoresistive element to enjoy an increased magnetoresistance change (ΔRA). In addition, the saturation magnetic flux density (Bs) decreases in a nitrided magnetic metal alloy. The inversion of magnetization is thus easily caused in the low Bs magnetic layer. The detection sensitivity of the CPP structure magnetoresistive element is improved. The CPP structure magnetoresistive element is thus allowed to detect magnetic bit data with higher accuracy.
摘要翻译： 在电流垂直于平面（CPP）结构的磁阻元件中，在自由磁性层和被钉扎的磁性层之间插入导电或绝缘的非磁性中间层。 自由磁性层和被钉扎磁性层中的至少一个由氮化磁性金属合金制成。 这种氮化磁性层允许CPP结构磁阻元件享受增加的磁阻变化（DeltaRA）。 此外，氮化磁性金属合金中的饱和磁通密度（Bs）也减小。 因此，在低Bs磁性层中容易引起磁化反转。 提高了CPP结构磁阻元件的检测灵敏度。 因此，CPP结构磁阻元件能够以更高的精度检测磁位数据。
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公开(公告)号：US20120320473A1
公开(公告)日：2012-12-20
申请号：US13164610
申请日：2011-06-20
CPC分类号： G11B5/39 , B82Y10/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A magnetic sensor having a novel hard bias structure that provides reduced gap spacing for increased data density. The magnetic sensor includes a sensor stack with first and second sides formed on a magnetic shield. A thin insulation layer is formed over the sides of the sensor stack and over the bottom shield. An under-layer comprising Cu—O is formed over the insulation layer and a hard magnetic bias layer is formed over the under-layer. The use of Cu—O as the under-layer allows the under-layer to be made thinner while still maintaining excellent magnetic properties in the hard bias layers formed thereover. This reduced thickness of the under-layer allows the gap spacing (spacing between the top and bottom magnetic shields) to be reduced, which in turn provides increased data density.
摘要翻译： 具有新型硬偏置结构的磁传感器，其提供减小的间隙间隔以增加数据密度。 磁传感器包括传感器堆叠，其中第一和第二侧形成在磁屏蔽上。 在传感器堆叠的两侧和底部屏蔽层之上形成薄的绝缘层。 在绝缘层之上形成包含Cu-O的底层，并且在下层上形成硬磁偏置层。 通过使用Cu-O作为下层，能够使底层变薄，同时在其上形成的硬质偏压层中保持优异的磁性能。 下层的这种减小的厚度允许减小间隙间隔（顶部和底部磁屏蔽之间的间隔），这进而提供增加的数据密度。
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5.发明授权Magnetoresistive head having perpendicularly offset anisotropy films and a hard disk drive using the same 有权具有垂直偏移的各向异性膜的磁阻头和使用其的硬盘驱动器公开(公告)号：US08451565B1
公开(公告)日：2013-05-28
申请号：US13301596
申请日：2011-11-21
申请人： Susumu Okamura , Takahiro Ibusuki
发明人： Susumu Okamura , Takahiro Ibusuki
IPC分类号： G11B5/33
CPC分类号： G11B5/3932 , G01R33/093 , Y10T29/49032 , Y10T428/1121
摘要： In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet positioned above the lower shield layer and on both sides of the sensor stack in a track width direction, and an upper shield layer positioned above the hard bias magnet and the sensor stack. The hard bias magnet includes a perpendicular anisotropy film positioned above the lower shield layer and aligned with both sides of the sensor stack in the track width direction, wherein the perpendicular anisotropy film directs magnetic fields in a direction perpendicular to planes of formation thereof, and an in-plane anisotropy film positioned above the perpendicular anisotropy film, wherein the in-plane anisotropy film directs magnetic fields in a direction of planes of formation thereof.
摘要翻译： 在一个实施例中，磁头包括下屏蔽层，位于下屏蔽层上方的传感器堆叠，传感器堆叠包括自由层，位于下屏蔽层上方并位于传感器堆叠两侧的分层硬偏置磁体 并且位于硬偏置磁体和传感器堆叠之上的上屏蔽层。 硬偏磁体包括位于下屏蔽层上方的垂直各向异性膜，并且沿着磁道宽度方向与传感器堆叠的两侧对齐，其中垂直各向异性膜在与其形成平面垂直的方向上引导磁场， 位于垂直各向异性膜之上的面内各向异性膜，其中面内各向异性膜在其形成平面的方向上引导磁场。
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6.发明申请READ SENSOR HAVING A STRUCTURE FOR REDUCING MAGNETIC COUPLING BETWEEN A MAGNETIC BIAS LAYER AND AN UPPER MAGNETIC SHIELD 有权读取传感器具有减少磁性偏移层与上位磁屏蔽之间的磁耦合的结构公开(公告)号：US20130308228A1
公开(公告)日：2013-11-21
申请号：US13472326
申请日：2012-05-15
CPC分类号： G11B5/3932 , B82Y10/00 , G11B5/3909 , G11B2005/3996
摘要： A magnetic sensor having reduced read gap thickness, reduced signal noise and improved signal to noise ratio. The sensor includes a sensor stack and hard bias structures formed at either side of the sensor stack for biasing the free layer of the sensor. A protective layer is formed over a portion of the hard bias structure, however a portion of the hard bias structure extends upward toward the upper shield and is disposed between the protective layer and the sensor stack as a result of the process used to form the magnetic bias structure. This portion of the hard bias structure that extends toward the upper shield has a reduced magnetization relative to the rest of the hard bias structure so that it will not magnetically couple with the upper shield.
摘要翻译： 具有减小的读取间隙厚度，降低的信号噪声和改善的信噪比的磁传感器。 传感器包括传感器堆叠和形成在传感器堆叠的任一侧的硬偏压结构，用于偏置传感器的自由层。 在硬偏压结构的一部分上形成保护层，然而硬偏压结构的一部分向上朝向上屏蔽延伸，并且由于用于形成磁性的过程而被设置在保护层和传感器堆之间 偏倚结构。 朝向上屏蔽延伸的硬偏压结构的该部分相对于硬偏压结构的其余部分具有减小的磁化，使得其不会与上屏蔽件磁耦合。
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7.发明申请MAGNETORESISTIVE HEAD HAVING PERPENDICULARLY OFFSET ANISOTROPY FILMS AND A HARD DISK DRIVE USING THE SAME 有权具有相同方向偏振片的磁性头和使用其的硬盘驱动器公开(公告)号：US20130128381A1
公开(公告)日：2013-05-23
申请号：US13301596
申请日：2011-11-21
申请人： Susumu Okamura , Takahiro Ibusuki
发明人： Susumu Okamura , Takahiro Ibusuki
CPC分类号： G11B5/3932 , G01R33/093 , Y10T29/49032 , Y10T428/1121
摘要： In one embodiment, a magnetic head includes a lower shield layer, a sensor stack positioned above the lower shield layer, the sensor stack including a free layer, a layered hard bias magnet positioned above the lower shield layer and on both sides of the sensor stack in a track width direction, and an upper shield layer positioned above the hard bias magnet and the sensor stack. The hard bias magnet includes a perpendicular anisotropy film positioned above the lower shield layer and aligned with both sides of the sensor stack in the track width direction, wherein the perpendicular anisotropy film directs magnetic fields in a direction perpendicular to planes of formation thereof, and an in-plane anisotropy film positioned above the perpendicular anisotropy film, wherein the in-plane anisotropy film directs magnetic fields in a direction of planes of formation thereof.
摘要翻译： 在一个实施例中，磁头包括下屏蔽层，位于下屏蔽层上方的传感器堆叠，传感器堆叠包括自由层，位于下屏蔽层上方并位于传感器堆叠两侧的分层硬偏置磁体 并且位于硬偏置磁体和传感器堆叠之上的上屏蔽层。 硬偏磁体包括位于下屏蔽层上方的垂直各向异性膜，并且沿着磁道宽度方向与传感器堆叠的两侧对齐，其中垂直各向异性膜在与其形成平面垂直的方向上引导磁场， 位于垂直各向异性膜之上的面内各向异性膜，其中面内各向异性膜在其形成平面的方向上引导磁场。
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8.发明申请Tunneling magnetoresistance (TMR) device, its manufacture method, magnetic head and magnetic memory using TMR device 有权隧道磁阻（TMR）器件，其制造方法，磁头和使用TMR器件的磁存储器公开(公告)号：US20110164448A1
公开(公告)日：2011-07-07
申请号：US13046567
申请日：2011-03-11
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/3204 , H01F10/3254 , H01F10/3272 , H01F10/3295 , H01F41/303 , H01L43/08 , H01L43/12 , Y10T428/1114
摘要： A barrier layer is disposed over a pinned layer made of ferromagnetic material having a fixed magnetization direction, the barrier layer having a thickness allowing electrons to transmit therethrough by a tunneling phenomenon. A first free layer is disposed over the barrier layer, the first free layer being made of amorphous or fine crystalline soft magnetic material which changes a magnetization direction under an external magnetic field. A second free layer is disposed over the first free layer, the second free layer being made of crystalline soft magnetic material which changes a magnetization direction under an external magnetic field and being exchange-coupled to the first free layer. A tunneling magnetoresistance device is provided which has good magnetic characteristics and can suppress a tunnel resistance change rate from being lowered.
摘要翻译： 阻挡层设置在由具有固定的磁化方向的铁磁材料制成的被钉扎层上，阻挡层具有允许电子通过隧道现象透过的厚度。 第一自由层设置在阻挡层上，第一自由层由在外部磁场下改变磁化方向的非晶或细晶体软磁材料制成。 第二自由层设置在第一自由层之上，第二自由层由结晶软磁材料制成，其在外部磁场下改变磁化方向并与第一自由层交换耦合。 提供了具有良好磁特性并能够抑制隧道电阻变化率降低的隧道磁阻装置。
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9.发明申请MAGNETORESISTIVE EFFECT DEVICE, MAGNETIC HEAD, AND INFORMATION STORAGE APPARATUS 有权磁阻效应装置，磁头和信息存储装置公开(公告)号：US20100284103A1
公开(公告)日：2010-11-11
申请号：US12842447
申请日：2010-07-23
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01L27/228 , H01L43/10
摘要： A magnetoresistive effect device includes an underlayer, an antiferromagnetic layer, a first ferromagnetic layer, a nonmagnetic layer, and a second ferromagnetic layer which are multilayered in this order on a substrate. The underlayer is formed of a metal nitride, and the antiferromagnetic layer is formed of an antiferromagnetic material including Ir and Mn.
摘要翻译： 磁阻效应器件包括在衬底上依次层叠的底层，反铁磁层，第一铁磁层，非磁性层和第二铁磁层。 底层由金属氮化物形成，反铁磁层由包含Ir和Mn的反铁磁材料形成。
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公开(公告)号：US20100053824A1
公开(公告)日：2010-03-04
申请号：US12548990
申请日：2009-08-27
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , H01F10/132 , H01F10/3254
摘要： A magnetoresistive element includes: a free layer made of a ferromagnetic material, the free layer configured to change the direction of magnetization under the influence of an external magnetic field; an insulating layer overlaid on the free layer, the insulating layer made of an insulating material; an amorphous reference layer overlaid on the insulating layer, the amorphous reference layer made of a ferromagnetic material, the amorphous reference layer configured to fix the magnetization in a predetermined direction; a crystal layer overlaid on the amorphous reference layer, the crystal layer containing crystal grains; a non-magnetic layer overlaid on the crystal layer, the non-magnetic layer containing crystal grains having grown from the crystal grains in the crystal layer; and a pinned layer overlaid on the non-magnetic layer, the pinned layer configured to fix the magnetization in a predetermined direction.
摘要翻译： 磁阻元件包括：由铁磁材料制成的自由层，所述自由层被配置为在外部磁场的影响下改变磁化方向; 覆盖在自由层上的绝缘层，由绝缘材料制成的绝缘层; 覆盖在所述绝缘层上的非晶参考层，由铁磁材料制成的所述非晶参考层，所述非晶参考层被配置为沿预定方向固定所述磁化; 覆盖在非晶参考层上的晶体层，含有晶粒的晶体层; 覆盖在所述晶体层上的非磁性层，所述非磁性层含有从所述晶体层中的晶粒生长的晶粒; 以及覆盖在所述非磁性层上的被钉扎层，所述被钉扎层被配置为沿预定方向固定所述磁化。
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