公开(公告)号：US07084563B2

公开(公告)日：2006-08-01

申请号：US11180350

申请日：2005-07-13

申请人： Aref Chowdhury ,  Hock Min Ng ,  Richart Elliott Slusher

发明人： Aref Chowdhury ,  Hock Min Ng ,  Richart Elliott Slusher

IPC分类号： H01J1/62 ,  H01L33/00

CPC分类号： B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

摘要： An apparatus includes a crystalline substrate, a layer of a first group III-nitride located on a planar surface of the substrate, and a layer of a second group III-nitride located over the layer of the first group III-nitride. The first and second group III-nitrides have different alloy compositions. The layer of second group III-nitride may have a pattern of columnar holes or trenches therein. The apparatus may include a plurality of pyramidal field-emitters that include the second group III-nitride.

摘要翻译： 一种装置包括晶体衬底，位于衬底的平面表面上的第一III族氮化物层和位于第一III族氮化物层上的第二III族氮化物层。 第一和第二III族氮化物具有不同的合金组成。 第二III族氮化物的层可以具有柱状孔或其中的沟槽的图案。 该装置可以包括多个金字塔形场致发射体，其包括第二III族氮化物。

公开(公告)号：US06986693B2

公开(公告)日：2006-01-17

申请号：US10397799

申请日：2003-03-26

申请人： Aref Chowdhury ,  Hock Min Ng ,  Richart Elliott Slusher

发明人： Aref Chowdhury ,  Hock Min Ng ,  Richart Elliott Slusher

IPC分类号： H01J9/04 ,  H01L29/06

CPC分类号： B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

公开(公告)号：US08613860B2

公开(公告)日：2013-12-24

申请号：US13248394

申请日：2011-09-29

申请人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

发明人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

IPC分类号： C25F3/00 ,  C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  H01L21/302 ,  H01L21/461

CPC分类号： B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

公开(公告)号：US07468578B2

公开(公告)日：2008-12-23

申请号：US11442032

申请日：2006-05-27

申请人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

发明人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

IPC分类号： H01J9/24

CPC分类号： B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

公开(公告)号：US08070966B2

公开(公告)日：2011-12-06

申请号：US12315202

申请日：2008-12-01

申请人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

发明人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

IPC分类号： C25F3/00 ,  C03C25/68 ,  H01L21/461

CPC分类号： B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

公开(公告)号：US20090139957A1

公开(公告)日：2009-06-04

申请号：US12315202

申请日：2008-12-01

申请人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

发明人： Aref Chowdhury ,  Hock Ng ,  Richart Elliott Slusher

IPC分类号： B44C1/22

CPC分类号： B82Y20/00 ,  B81B1/00 ,  G02B6/1225 ,  G02B2006/12035 ,  H01J1/304 ,  H01J3/022 ,  H01J9/025 ,  H01L21/0254 ,  H01L21/02639 ,  H01L21/30612

摘要： A fabrication method produces a mechanically patterned layer of group III-nitride. The method includes providing a crystalline substrate and forming a first layer of a first group III-nitride on a planar surface of the substrate. The first layer has a single polarity and also has a pattern of holes or trenches that expose a portion of the substrate. The method includes then, epitaxially growing a second layer of a second group III-nitride over the first layer and the exposed portion of substrate. The first and second group III-nitrides have different alloy compositions. The method also includes subjecting the second layer to an aqueous solution of base to mechanically pattern the second layer.

摘要翻译： 制造方法产生III族氮化物的机械图案化层。 该方法包括提供晶体衬底并在衬底的平坦表面上形成第一III族氮化物的第一层。 第一层具有单一极性，并且还具有露出基板的一部分的孔或沟槽的图案。 该方法包括在第一层和衬底的暴露部分上外延生长第二III族氮化物层的第二层。 第一和第二III族氮化物具有不同的合金组成。 该方法还包括使第二层经受基底水溶液以机械地图形化第二层。

公开(公告)号：US06363096B1

公开(公告)日：2002-03-26

申请号：US09385167

申请日：1999-08-30

申请人： Ananth Dodabalapur ,  Attila Mekis ,  John A. Rogers ,  Richart Elliott Slusher

发明人： Ananth Dodabalapur ,  Attila Mekis ,  John A. Rogers ,  Richart Elliott Slusher

IPC分类号： H01S30933

CPC分类号： H01S3/0933 ,  H01S3/17 ,  H01S3/178 ,  H01S5/105

摘要： A laser structure may be used to fabricate a plastic laser and achieve electrically-driven lasing action. The structure comprises an LED, a waveguide laser, and a substrate disposed between them. The substrate has a first and a second side. Light emitted from the LED is received by the substrate at the first side and concentrated as it is guided with the body of the substrate to the second side, where it is received by the laser. Concentration of the light across the substrate improves the efficiency of the device and leads to lower threshold powers.

摘要翻译： 激光结构可用于制造塑料激光器并实现电驱动的激光作用。 该结构包括LED，波导激光器和布置在它们之间的衬底。 衬底具有第一侧和第二侧。 从LED发射的光被第一侧的基板接收，并且随着基板的主体被引导到被激光器接收的第二侧而被集中。 穿过衬底的光的浓度提高了器件的效率并导致了较低的阈值功率。

公开(公告)号：US07062176B2

公开(公告)日：2006-06-13

申请号：US10331217

申请日：2002-12-30

申请人： Xiang Liu ,  Colin J McKinstrie ,  Linn Frederick Mollenauer ,  Richart Elliott Slusher ,  Xing Wei ,  Chunhui Xu

发明人： Xiang Liu ,  Colin J McKinstrie ,  Linn Frederick Mollenauer ,  Richart Elliott Slusher ,  Xing Wei ,  Chunhui Xu

IPC分类号： H04B10/02 ,  H04B10/18 ,  G02B5/00 ,  G02F1/03 ,  G02F1/355 ,  H04B10/06 ,  G02F1/35 ,  G02F1/377

CPC分类号： H04B10/255

摘要： A nonlinear phase-shift compensation method and apparatus is provided for improving system performance in optical transmission systems. The apparatus includes a phase-shift compensating device that provides a partial compensating phase shift to reduce the nonlinear phase noise resulting from self-phase modulation and amplified spontaneous emissions in an optical transmission system.

摘要翻译： 提供了一种用于提高光传输系统的系统性能的非线性相移补偿方法和装置。 该装置包括相移补偿装置，其提供部分补偿相移以减少由光传输系统中的自相位调制和放大的自发发射引起的非线性相位噪声。

公开(公告)号：US06975664B1

公开(公告)日：2005-12-13

申请号：US09480409

申请日：2000-01-11

申请人： Ananth Dodabalapur ,  Attila Mekis ,  John A. Rogers ,  Richart Elliott Slusher

发明人： Ananth Dodabalapur ,  Attila Mekis ,  John A. Rogers ,  Richart Elliott Slusher

IPC分类号： H01L33/00 ,  H01S3/06 ,  H01S3/0933 ,  H01S3/17 ,  H01S5/10 ,  H01S3/08 ,  G02B6/02

CPC分类号： H01S3/0933 ,  H01S3/17 ,  H01S3/178 ,  H01S5/105

摘要： A two-dimensional photonic crystal coupler is disclosed, together with a cross-coupled laser structure that is based on a two-dimensional photonic crystal coupler stage. Unlike traditional grating couplers, this two-dimensional photonic crystal coupler can couple light into a single or a plurality of discrete directions in the far-field, i.e., the output light may be unidirectional or discrete. The coupler can be integrated with one-dimensional lasers, a distributed feedback laser, a distributed Bragg reflector laser, and integrated on the same waveguide as the lasers. A resonant cavity coupler design improves the coupling efficiency of two-dimensional photonic crystal-based couplers.

摘要翻译： 公开了一种二维光子晶体耦合器以及基于二维光子晶体耦合器级的交叉耦合激光器结构。 与传统光栅耦合器不同，该二维光子晶体耦合器可将光耦合到远场中的单个或多个离散方向，即，输出光可以是单向的或离散的。 耦合器可以与一维激光器，分布式反馈激光器，分布式布拉格反射器激光器集成在一起，并集成在与激光器相同的波导上。 谐振腔耦合器设计提高了基于二维光子晶体的耦合器的耦合效率。

公开(公告)号：US07616425B2

公开(公告)日：2009-11-10

申请号：US11982002

申请日：2007-10-31

申请人： Vladimir Anatolyevich Aksyuk ,  Maria Elina Simon ,  Richart Elliott Slusher

发明人： Vladimir Anatolyevich Aksyuk ,  Maria Elina Simon ,  Richart Elliott Slusher

IPC分类号： H01G5/00

CPC分类号： H02N10/00 ,  B81B2201/0292 ,  G01J5/40

摘要： A heat-sensitive apparatus includes a substrate with a top surface, one or more bars being rotatably joined to the surface and having bimorph portions, and a plate rotatably joined to the surface and substantially rigidly joined to the one or more bars. Each bimorph portion bends in response to being heated. The one or more bars and the plate are configured to cause the plate to move farther away from the top surface in response to the one or more bimorph portions being heated.

摘要翻译： 热敏设备包括具有顶表面的基底，一个或多个条可旋转地接合到该表面并具有双压电晶片部分，以及可旋转地接合到该表面并且基本上刚性地连接到一个或多个条的板。 每个双压电晶片部分响应于加热而弯曲。 一个或多个杆和板被配置成响应于加热的一个或多个双压电晶片部分而使板移动离开顶表面更远。