公开(公告)号：US5970332A

公开(公告)日：1999-10-19

申请号：US623384

申请日：1996-03-27

申请人： Armand Pruijmboom ,  Alexander C. L. Jansen ,  Ronald Koster ,  Willem Van Der Wel

发明人： Armand Pruijmboom ,  Alexander C. L. Jansen ,  Ronald Koster ,  Willem Van Der Wel

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/78 ,  H01L21/8238

CPC分类号： H01L21/8249

摘要： A method of manufacturing a semiconductor device with a bipolar transistor (1) and a MOS transistor (2) formed in a silicon body (3) which for this purpose is provided with a field insulation region (4) by which semiconductor regions (6, 7) adjoining a surface (5) of said body are mutually insulated. A first region (6) is destined for the bipolar transistor and a second region (7) for the MOS transistor. The second region is provided with a gate dielectric (10). Then an electrode layer of non-crystalline silicon (11) is provided on the surface, which electrode layer is provided with a doping and in which electrode layer subsequently an emitter electrode (12) is formed on the first region and a gate electrode (13) on the second region. The electrode layer is provided with a doping by means of a treatment whereby a first dopant is provided at the area of the first region and a second dopant at the area of the second region, the first dopant being provided to a concentration such that the emitter zone of the transistor can be formed through diffusion from the emitter electrode to be formed in the electrode layer, while the second dopant is provided to a concentration lower than that of the first dopant. Owing to the comparatively low doping level, gate oxide breakdown is prevented during plasma etching and ion implantation.

摘要翻译： 制造具有双极晶体管（1）的半导体器件的方法和形成在硅体（3）中的MOS晶体管（2），为此目的，提供了一种场致绝缘区域（4） 7）邻接所述主体的表面（5）是相互绝缘的。 第一区域（6）用于双极晶体管和用于MOS晶体管的第二区域（7）。 第二区域设置有栅极电介质（10）。 然后在表面上提供非晶硅（11）的电极层，该电极层设置有掺杂，并且其中电极层随后在第一区域上形成发射电极（12），栅电极（13） ）在第二个地区。 电极层通过处理被提供掺杂，由此在第一区域的区域处提供第一掺杂剂，在第二区域的区域设置第二掺杂剂，第一掺杂剂被提供为使得发射极 晶体管的区域可以通过从要在电极层中形成的发射极电极的扩散而形成，而第二掺杂剂的浓度比第一掺杂剂的浓度低。 由于相对较低的掺杂水平，在等离子体蚀刻和离子注入期间防止栅氧化层击穿。

公开(公告)号：US5824560A

公开(公告)日：1998-10-20

申请号：US623383

申请日：1996-03-27

申请人： Willem Van Der Wel ,  Alexander C. L. Jansen ,  Ronald Koster ,  Armand Pruijmboom

发明人： Willem Van Der Wel ,  Alexander C. L. Jansen ,  Ronald Koster ,  Armand Pruijmboom

IPC分类号： H01L29/43 ,  H01L21/28 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L21/8249 ,  Y10S148/009

摘要： A method of manufacturing a semiconductor device with a bipolar transistor (1) and a MOS transistor (2) formed in a silicon body (3) which for this purpose is provided with a field insulation region (4) by which semiconductor regions (6, 7) adjoining a surface (5) of said body are mutually insulated. A first region (6) is to be used for the bipolar transistor and a second region for the MOS transistor. The two regions are provided in that order with a gate dielectric layer (10) and an auxiliary layer (11) of non-crystalline silicon. The auxiliary layer and the gate dielectric layer are subsequently removed from the first region. Then an electrode layer (13) of non-crystalline silicon is deposited. An emitter electrode (15) is formed in the electrode layer on the first region, and a gate electrode (16) is formed both in the electrode layer and in the auxiliary layer on the second region. The electrode layer is subjected to a treatment whereby non-crystalline silicon is removed and whereby a layer of non-crystalline silicon is formed on the surface of the silicon body which has substantially the same thickness at the area of the first region and at the area of the second region. Overetching of the base zone (9) in the formation of the emitter is avoided thereby, so that the base zone may be comparatively thin.

摘要翻译： 制造具有双极晶体管（1）的半导体器件的方法和形成在硅体（3）中的MOS晶体管（2），为此目的，提供了一种场致绝缘区域（4） 7）邻接所述主体的表面（5）是相互绝缘的。 第一区域（6）将用于双极晶体管和用于MOS晶体管的第二区域。 这两个区域依次具有栅极电介质层（10）和非结晶硅的辅助层（11）。 随后从第一区域去除辅助层和栅极电介质层。 然后沉积非晶硅的电极层（13）。 在第一区域的电极层中形成发射电极（15），在第二区域的电极层和辅助层中形成栅电极（16）。 对电极层进行处理，由此去除非晶硅，由此在硅体的表面上形成非晶硅层，该层在第一区域的区域处具有基本相同的厚度 的第二个地区。 因此避免了形成发射器的基区（9）的过蚀刻，使得基区可以相对较薄。

公开(公告)号：US5554256A

公开(公告)日：1996-09-10

申请号：US310824

申请日：1994-09-22

申请人： Armand Pruijmboom ,  Ronald Koster ,  Cornelis E. Timmering ,  Ronald Dekker

发明人： Armand Pruijmboom ,  Ronald Koster ,  Cornelis E. Timmering ,  Ronald Dekker

IPC分类号： H01L21/31 ,  H01L21/308 ,  H01L21/76 ,  H01L21/00

CPC分类号： H01L21/308 ,  H01L21/76

摘要： A method of manufacturing a semiconductor device comprising a semiconductor body (1) with field insulation regions (14) formed by grooves (10; 24) filled with an insulating material (13) is disclosed. The grooves (10; 24) are etched into the semiconductor body (1) with the use of an etching mask (9) formed on an auxiliary layer (6) provided on a surface (5) of the semiconductor body (1). The auxiliary layer (6) is removed from the portion (11) of the surface (5) situated next to the etching mask (9) before the grooves (10; 24) are etched into the semiconductor body (1), and the auxiliary layer (6) is removed from the edge (12) of the surface (5) situated below the etching mask (9) after the grooves (10; 24) have been etched into the semiconductor body. Furthermore, a layer (13) of the insulating material is deposited on the semiconductor body (1), whereby the grooves (10; 24) are filled and the edge (12) of the surface (5) situated below the etching mask (9) is covered. Then the semiconductor body is subjected to a treatment whereby material is taken off parallel to the surface (5) down to the auxiliary layer (6), and finally the remaining portion of the auxiliary layer (6) is removed. Field insulation regions are thus formed which extend over an edge (12) of the active regions (15) surrounded by the field insulation regions (14) with a strip (18) which has no overhanging edge.

摘要翻译： 公开了一种制造半导体器件的方法，该半导体器件包括具有由绝缘材料（13）填充的沟槽（10; 24）形成的场绝缘区域（14）的半导体本体（1）。 使用形成在设置在半导体本体（1）的表面（5）上的辅助层（6）上的蚀刻掩模（9），将凹槽（10; 24）蚀刻到半导体本体（1）中。 在凹槽（10; 24）被蚀刻到半导体本体（1）中之前，从邻近蚀刻掩模（9）的表面（5）的部分（11）去除辅助层（6），并且辅助层 在凹槽（10; 24）被蚀刻到半导体本体中之后，从位于蚀刻掩模（9）下方的表面（5）的边缘（12）去除层（6）。 此外，绝缘材料的层（13）沉积在半导体本体（1）上，由此填充凹槽（10; 24），并且位于蚀刻掩模（9）下方的表面（5）的边缘（12） ）被覆盖。 然后对半导体体进行处理，由此将材料平行于表面（5）取下到辅助层（6），最后除去辅助层（6）的剩余部分。 这样形成了场绝缘区域，该区域由具有不突出边缘的条带（18）在由绝缘区域（14）包围的有源区域（15）的边缘（12）上延伸。

公开(公告)号：US08378287B2

公开(公告)日：2013-02-19

申请号：US12665124

申请日：2008-06-23

申请人： Marcel Franz Christian Schemmann ,  Armand Pruijmboom ,  Silvia Maria Booij ,  Klaus Peter Werner

发明人： Marcel Franz Christian Schemmann ,  Armand Pruijmboom ,  Silvia Maria Booij ,  Klaus Peter Werner

IPC分类号： G06M7/00 ,  H01J5/02

CPC分类号： H01S5/02248 ,  G06F3/0317 ,  H01L2224/48091 ,  H01L2224/48465 ,  H01S5/0028 ,  H01S5/0224 ,  H01S5/0683 ,  H01S5/18388 ,  H01L2924/00014 ,  H01L2924/00

摘要： The invention relates to an optical sensor module (1) for a measuring device. Said module comprises at least one optical sensor (2) including a diode laser (3) having a laser cavity for generating a measuring beam, the diode laser being attached to a substrate (12), converging means (5) (such as a lens). During measuring, such converging means (5) converges the measuring beam in an action plane and converges in the laser cavity the measuring beam radiation that has been back-scattered by an object to generate a self-mixing effect and means for measuring the self-mixing effect. Later means comprise a photo diode (4) and an associated signal processing circuitry. According to an essential aspect of the invention, that the diode laser (3) is configured to emit laser radiation of a wavelength for which the substrate (12) being attached to the diode laser (3) is transparent. This configuration leads to an essentially simple (and therefore cheap) sensor module.

摘要翻译： 本发明涉及一种用于测量装置的光学传感器模块（1）。 所述模块包括至少一个光学传感器（2），其包括具有用于产生测量光束的激光腔的二极管激光器（3），所述二极管激光器附接到基板（12），会聚装置（5）（诸如透镜 ）。 在测量期间，这种会聚装置（5）将测量光束会聚在一个动作平面中，并且在激光腔中会聚已经被物体反向散射以产生自混合效果的测量光束辐射， 混合效果。 稍后的装置包括光电二极管（4）和相关联的信号处理电路。 根据本发明的一个重要方面，二极管激光器（3）被配置为发射附着到二极管激光器（3）的衬底（12）是透明的波长的激光辐射。 这种配置导致基本上简单（因此便宜）的传感器模块。

公开(公告)号：US5405789A

公开(公告)日：1995-04-11

申请号：US141888

申请日：1993-10-22

申请人： Ronald Dekker ,  Henricus G. R. Maas ,  Armand Pruijmboom ,  Wilhelmus T. A. J. Van Den Einden

发明人： Ronald Dekker ,  Henricus G. R. Maas ,  Armand Pruijmboom ,  Wilhelmus T. A. J. Van Den Einden

IPC分类号： H01L21/28 ,  H01L21/331 ,  H01L21/335 ,  H01L21/336 ,  H01L21/8249 ,  H01L29/78 ,  H01L21/265

CPC分类号： H01L29/66303 ,  H01L21/28 ,  H01L21/8249 ,  H01L29/66416

摘要： A method of manufacturing a semiconductor device with a semiconductor element which includes a semiconductor zone (19) situated below an electrode (18) and adjoining a surface (5) of a semiconductor body (1), which semiconductor zone substantially does not project outside the electrode (18) in lateral direction. The electrode (18) is here formed on the surface (5) of the semiconductor body (1), after which semiconductor material adjoining the surface (5) and not covered by the electrode (18) is removed by an etching treatment, whereby the position of the semiconductor zone (19) below the electrode (18) is defined. Before the electrode (18) is formed, a surface zone (16) adjoining the surface (5) is formed in the semiconductor body (1) with a depth and a doping such as are desired for the semiconductor zone (19) to be formed below the electrode (18), after which the electrode (18) is formed on this surface zone and, during the etching treatment, the portion of the surface zone (16) not covered by the electrode (18) is etched away through its entire thickness. Conducting materials such as aluminium or aluminium alloys may be used for the electrode (18), i.e. materials which are not resistant to temperatures necessary for forming semiconductor zones through diffusion.

摘要翻译： 一种制造具有半导体元件的半导体器件的方法，该半导体元件包括位于电极（18）下方并邻接半导体本体（1）的表面（5）的半导体区（19），该半导体区基本上不会突出在半导体本体 电极（18）。 此时，电极（18）形成在半导体本体（1）的表面（5）上，然后通过蚀刻处理去除邻接表面（5）并且未被电极（18）覆盖的半导体材料，由此， 限定电极（18）下方的半导体区域（19）的位置。 在形成电极（18）之前，在半导体本体（1）中形成与表面（5）相邻的表面区域（16），以形成半导体区域（19）所需的深度和掺杂 在电极（18）的下方，之后在该表面区域上形成电极（18），并且在蚀刻处理期间，未被电极（18）覆盖的表面区域（16）的部分通过其整个 厚度。 可以使用诸如铝或铝合金的导电材料用于电极（18），即不耐受通过扩散形成半导体区域所需的温度的材料。

公开(公告)号：US09573385B2

公开(公告)日：2017-02-21

申请号：US13578712

申请日：2011-03-16

申请人： Holger Moench ,  Stephan Gronenborn ,  Armand Pruijmboom

发明人： Holger Moench ,  Stephan Gronenborn ,  Armand Pruijmboom

IPC分类号： B41J2/45 ,  B41J2/455 ,  B41J2/475 ,  B41J2/48 ,  B41J2/447

CPC分类号： B41J2/48 ,  B41J2/447 ,  B41J2/45 ,  B41J2/451 ,  B41J2/455 ,  B41J2/475 ,  B41J2/4753

摘要： The invention relates to a laser based printing apparatus (100) using laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) for supplying energy to a target object (120) to form an image. The printing apparatus (100) comprises a laser light source arrangement (110, 400, 600) comprising a plurality of laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) arranged such that laser beams (114, 410, 805, 806) of the laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) intersect a surface (121) of a target object (120) at different target points (123, 24, 125, 412, 414, 416, 616, 610, 802) along a moving direction (122), a transport mechanism (130) for moving the target object (120) and the laser light sources (111, 12, 113, 402, 404, 406, 604, 606, 808, 810) relatively to each other in the moving 10 direction (122) and a controlling arrangement (140), which is realized to control the laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) and/or the transport mechanism (130) based on image data (150) in such a way, that the energy level of a target point (123, 124, 125, 412, 414, 416, 616, 610, 802) is stepwise increased by irradiation of at least two different laser light sources along the moving direction (122). The invention also describes a method for controlling such a laser based printing apparatus (100).

摘要翻译： 本发明涉及一种使用激光光源（111,112,113,402,404,406,604,606,808,810）的激光打印设备（100），用于向目标物体（120）供应能量以形成 图片。 打印设备（100）包括激光光源装置（110,400,600），该激光光源装置包括多个激光光源（111,112,113,402,404,406,604,606,808,810），这些激光光源 激光光源（111,112,113,402,404,406,604,606,808,810）的激光束（114,410,805,806）与目标物体（120）的表面（121）相交， 在沿着移动方向（122）的不同目标点（123,24,225,412,414,416,616,610,802）处的传送机构（130），用于移动所述目标物体（120）和所述激光光源 （111,12,113,402,404,406,604,606,808,810）在移动的10方向（122）和控制装置（140）之间彼此相对移动，其被实现为控制激光光源 （111,112,113,402,404,406,604,606,808,810）和/或基于图像数据（150）的传送机构（130），使得目标点的能级 （123,124,125,412,414,416,616,610,802）由i逐步增加 沿着移动方向（122）辐射至少两个不同的激光光源。 本发明还描述了一种用于控制这种基于激光的打印设备（100）的方法。

公开(公告)号：US5629554A

公开(公告)日：1997-05-13

申请号：US637012

申请日：1996-04-24

申请人： Henricus G. R. Maas ,  Ronald Dekker ,  Armand Pruijmboom

发明人： Henricus G. R. Maas ,  Ronald Dekker ,  Armand Pruijmboom

IPC分类号： H01L29/73 ,  H01L21/331 ,  H01L29/735 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70 ,  H01L31/11

CPC分类号： H01L29/66265 ,  H01L29/7317

摘要： A semiconductor device with a bipolar transistor formed in a layer of semiconductor material (2) provided on an insulating substrate (1), in which material a collector zone (4), a base zone (5), and an emitter zone (6) are provided below a strip of insulating material (3) situated on the layer (2), which zones are connected to contact regions (7, 8, 9, 10) lying adjacent the strip (3), three of the contact regions (8, 9, 10) lying next to one another at a same side of the strip (3), of which two (8 and 9) are connected to the base zone (5) while the third (10), which lies between the former two (8 and 9), is connected to the emitter zone (6). The three contact regions (8, 9, 10) situated next to another at the same side of the strip (3) are provided alternately in the layer of semiconductor material (2) and in a further layer of semiconductor material (19) extending up to the strip (3). The three contact regions (8, 9, 10) connected to the base zone (5) and the emitter zone (6) may be provided with mutual interspacings which are smaller than the details which can be realised in a photoresist layer by means of the photolithographic process to be used in the manufacture of the transistor. As a result, the transistor can be manufactured with a very small extrinsic base.

摘要翻译： 一种具有双极晶体管的半导体器件，其形成在设置在绝缘基板（1）上的半导体材料层（2）中，其中，集电区（4），基极区（5）和发射极区（6） 设置在位于层（2）上的绝缘材料条（3）的下方，这些区域连接到位于条带（3）附近的接触区域（7,8,9,10），三个接触区域（8） ，9,10）彼此相邻放置在条带（3）的同一侧，其中两个（8和9）连接到基部区域（5），而第三个（10）位于前者 两个（8和9）连接到发射区（6）。 位于带（3）的同一侧的另一侧的三个接触区域（8,9,10）交替地设置在半导体材料层（2）中，并在另一层半导体材料（19）中向上延伸 （3）。 连接到基部区域（5）和发射极区域（6）的三个接触区域（8,9,10）可以具有相对的间隔，该相互间隔小于可以通过光刻胶层 光刻工艺用于制造晶体管。 结果，晶体管可以用非常小的外在基极制造。

公开(公告)号：US5268313A

公开(公告)日：1993-12-07

申请号：US820454

申请日：1992-01-13

申请人： Henricus G. R. Maas ,  Armand Pruijmboom ,  Peter H. Kranen ,  Johanna M. L. Van Rooij-Mulder ,  Marguerite M. C. Van Iersel-Schiffmacher

发明人： Henricus G. R. Maas ,  Armand Pruijmboom ,  Peter H. Kranen ,  Johanna M. L. Van Rooij-Mulder ,  Marguerite M. C. Van Iersel-Schiffmacher

IPC分类号： H01L21/306 ,  H01L21/28 ,  H01L21/285 ,  H01L21/331 ,  H01L21/60 ,  H01L29/10 ,  H01L29/73 ,  H01L29/732 ,  H01L21/265

CPC分类号： H01L21/76897 ,  H01L21/28525 ,  H01L29/1004 ,  H01L29/66272 ,  H01L29/66287 ,  H01L29/732 ,  Y10S148/01 ,  Y10S148/102

摘要： A method of manufacturing a semiconductor device whereby an spacer is formed from a second layer in a fully self-registering manner after a layer portion of a first layer has been formed. For this purpose, the second layer and a masking layer are provided in that order, which masking layer has a greater thickness next to the layer portion than above it. The portion of the second layer situated above the layer portion and the spacer to be formed is then exposed in that the masking layer is etched back over at least substantially its entire surface. A portion of the masking layer then remains next to the layer portion, which masking layer portion is sufficiently thick for adequately protecting the subjacent portion of the second layer against the treatment which is subsequently carried out and by which the etching resistance of at least the top layer of the exposed portion of the second layer is increased. The non-treated portion of the second layer is then selectively etched relatively to the treated portion in order to form the spacer.

公开(公告)号：US20130176375A1

公开(公告)日：2013-07-11

申请号：US13578712

申请日：2011-03-16

申请人： Holger Moench ,  Stephan Gronenborn ,  Armand Pruijmboom

发明人： Holger Moench ,  Stephan Gronenborn ,  Armand Pruijmboom

IPC分类号： B41J2/455

CPC分类号： B41J2/48 ,  B41J2/447 ,  B41J2/45 ,  B41J2/451 ,  B41J2/455 ,  B41J2/475 ,  B41J2/4753

摘要： The invention relates to a laser based printing apparatus (100) using laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) for supplying energy to a target object (120) to form an image. The printing apparatus (100) comprises a laser light source arrangement (110, 400, 600) comprising a plurality of laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) arranged such that laser beams (114, 410, 805, 806) of the laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) intersect a surface (121) of a target object (120) at different target points (123, 24, 125, 412, 414, 416, 616, 610, 802) along a moving direction (122), a transport mechanism (130) for moving the target object (120) and the laser light sources (111, 12, 113, 402, 404, 406, 604, 606, 808, 810) relatively to each other in the moving 10 direction (122) and a controlling arrangement (140), which is realized to control the laser light sources (111, 112, 113, 402, 404, 406, 604, 606, 808, 810) and/or the transport mechanism (130) based on image data (150) in such a way, that the energy level of a target point (123, 124, 125, 412, 414, 416, 616, 610, 802) is stepwise increased by irradiation of at least two different laser light sources along the moving direction (122). The invention also describes a method for controlling such a laser based printing apparatus (100).

摘要翻译： 本发明涉及一种使用激光光源（111,112,113,402,404,406,604,606,808,810）的激光打印设备（100），用于向目标物体（120）供应能量以形成 图片。 打印设备（100）包括激光光源装置（110,400,600），该激光光源装置包括多个激光光源（111,112,113,402,404,406,604,606,808,810），这些激光光源 激光光源（111,112,113,402,404,406,604,606,808,810）的激光束（114,410,805,806）与目标物体（120）的表面（121）相交， 在沿着移动方向（122）的不同目标点（123,24,225,412,414,416,616,610,802）处的传送机构（130），用于移动所述目标物体（120）和所述激光光源 （111,12,113,402,404,406,604,606,808,810）在移动的10方向（122）和控制装置（140）之间彼此相对移动，其被实现为控制激光光源 （111,112,113,402,404,406,604,606,808,810）和/或基于图像数据（150）的传送机构（130），使得目标点的能级 （123,124,125,412,414,416,616,610,802）由i逐步增加 沿着移动方向（122）辐射至少两个不同的激光光源。 本发明还描述了一种用于控制这种基于激光的打印设备（100）的方法。

公开(公告)号：US20120200858A1

公开(公告)日：2012-08-09

申请号：US13500678

申请日：2010-10-18

申请人： Armand Pruijmboom

发明人： Armand Pruijmboom

IPC分类号： G01B9/02

CPC分类号： G01S7/4814 ,  G01B9/02028 ,  G01B9/02092 ,  G01P3/366 ,  G01P13/045 ,  G01S7/4811 ,  G01S17/50 ,  G02B6/4214 ,  G06F3/042

摘要： The proposed self-mixing interference device comprises a substrate (1) with an integrated optical wave guide structure (3), a semiconductor laser source (2) arranged on a surface of the substrate (1) and emitting laser radiation towards said surface, and a photodetector arranged to detect intensity variations of the laser radiation. The wave guide structure (3) is optically connected to the laser source (2) and designed to guide the laser radiation emitted by the laser source to an out-coupling area at the surface of the substrate (1) and to guide a portion of the laser radiation scattered back from a target object (4) outside of the substrate (1) to re-enter the laser source (2). This self-mixing interference device can be realized with a lower total height compared to the known self-mixing interference devices.

摘要翻译： 所提出的自混合干涉装置包括具有集成光波导结构（3）的衬底（1），布置在衬底（1）的表面上并向所述表面发射激光辐射的半导体激光源（2），以及 布置成检测激光辐射的强度变化的光电检测器。 波导结构（3）光学地连接到激光源（2）并且被设计成将由激光源发射的激光辐射引导到基板（1）的表面处的出耦合区域，并且引导一部分 激光辐射从基板（1）外部的目标物体（4）散射回来，以重新进入激光源（2）。 与已知的自混合干扰装置相比，该自混合干涉装置可以以较低的总高度实现。