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公开(公告)号：US20230170139A1
公开(公告)日：2023-06-01
申请号：US18072692
申请日：2022-11-30
申请人： Atlas Magnetics Inc.
CPC分类号： H01F41/0206 , C25D5/009 , C25D5/22
摘要： A method of producing layered cores for magnetic circuit components such as inductors and transformers suitable for use in the microelectronics industry. A series of pillars are created on a carrier Layers of the magnetic core are plated onto the exposed surface of the pillars. After the desired number of core layers are plated, the plated layers are ground down to expose the pillars, leaving a series of magnetic cores between the pillars. The pillars can then be removed, leaving a series of magnetic cores. The pillars are created by either building up pillars, such as copper pillars, or by slitting plastic mediums, such as dry film or epoxy plastic, the roughness of the magnetic cores produced depends on the method of forming the pillars.
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公开(公告)号：US20230170268A1
公开(公告)日：2023-06-01
申请号：US18072686
申请日：2022-11-30
申请人： Atlas Magnetics Inc.
CPC分类号： H01L23/3114 , H01L24/13 , H01L21/561 , H01L21/78 , H01L24/05 , H01L2224/0401 , H01L2224/13147
摘要： A new method and apparatus for wafer-level electroplating that allows for the plating of pillars, inductors, windings, and other components not easily plated in plating wafer level chip scale packaging with ball connectors. By plating pillars directly onto a silicon wafer, covering both pillar and wafer with dielectric film, and grinding to expose the copper pillar, integrated circuits which incorporate passive components can be directly created on the wafer before any singulation.
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公开(公告)号：US20240029929A1
公开(公告)日：2024-01-25
申请号：US18131350
申请日：2023-04-05
申请人： Atlas Magnetics
摘要： A hybrid magnetic material comprising at least one magnetic material having at least one internal porous insulative layer; and wherein, at least one of the magnetic materials fills the voids of the internal porous insulative layer. The hybrid material blends core metals and insulation layers in a manner so that the resulting material operates as a single layer material with its own unique conductivity; skin effect; B-H curve; BSAT parameters; and a unique and strong directional impedance. By using a porous insulation layer, metal layers may be bonded together through insulation layers, and this allows rapid low cost formation of the hybrid material. The hybrid material may be used to form small low-cost cores capable of handling high frequency applications.
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公开(公告)号：US20240195154A1
公开(公告)日：2024-06-13
申请号：US18581118
申请日：2024-02-19
申请人： Atlas Magnetics
摘要： The present invention is a spark gap capable of integrating into multiple layer semiconductor substrate packaging. The initial gap in the spark gap is solid and it can be converted into air, meaning gaseous, and the air gap is achieved by having the gap initially be filled with a solid and then running a voltage through the spark gap so that the gap explodes and the solid is replaced by an air cavity. The spark gap may be formed by initially electroplating electrodes through a dry film-based process, and then, to further close the gap between electrodes, beyond the practical limits of dry film, pigtail plating may be used. This pigtail plating may expand the electrodes and thus reduce the gap distance.
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公开(公告)号：US20240003041A1
公开(公告)日：2024-01-04
申请号：US18135660
申请日：2023-04-17
申请人： Atlas Magnetics Inc.
发明人： John Othniel McDonald , Zach Zimits
摘要： A hybrid conductive material comprising at least one conductive material having at least one internal porous insulative layer; and wherein, at least one of the conductive materials fills the voids of the internal porous insulative layer. The hybrid material blends conductive metals and porous insulation layers in a manner so that the resulting material operates as a single layer material with its own unique conductivity and skin depth; and a unique and strong directional impedance. By using a porous insulation layer, metal layers may be bonded together through insulation layers, and this allows rapid low-cost formation of the hybrid material. The hybrid material may be used to form thin wires or traces capable of handling high frequency applications.
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公开(公告)号：US20230082177A1
公开(公告)日：2023-03-16
申请号：US17900803
申请日：2022-08-31
申请人： Atlas Magnetics
摘要： An apparatus and method for plating magnetic cores by periodically transferring a plate directly back and forth between a metal plating environment and an insulation deposit environment. This direct metal to insulation to metal plating is enabled by a nano-scale insulation layer that provides an imperfect coverage of the metal layer while still keeping sufficient insulation to prevent eddy current formation—even during high-frequency current applications. Therefore, this invention enables the practical creation of magnetic cores having layers with widths even under one nanometer and can generate cores having a layer scale that can be varied to suit a variety of uses in the microelectronic industry.
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公开(公告)号：US12077877B2
公开(公告)日：2024-09-03
申请号：US17900803
申请日：2022-08-31
申请人： Atlas Magnetics
摘要： An apparatus and method for plating magnetic cores by periodically transferring a plate directly back and forth between a metal plating environment and an insulation deposit environment. This direct metal to insulation to metal plating is enabled by a nano-scale insulation layer that provides an imperfect coverage of the metal layer while still keeping sufficient insulation to prevent eddy current formation—even during high-frequency current applications. Therefore, this invention enables the practical creation of magnetic cores having layers with widths even under one nanometer and can generate cores having a layer scale that can be varied to suit a variety of uses in the microelectronic industry.
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公开(公告)号：US20240011181A1
公开(公告)日：2024-01-11
申请号：US18220756
申请日：2023-07-11
申请人： Atlas Magnetics
摘要： In an exemplary embodiment of the present invention: A series of U-shaped nickel-iron components are plated onto a rough or roughened semiconductor package or printed circuit board material. The horizontal base of the U-shaped component has a surface roughness of the semiconductor package material. The vertical surfaces of the U-shape have a surface roughness derived from the dry film. The large smooth vertical surface allows the U-shaped nickel-iron components to have a low average roughness. The lowered average roughness reduces the path length the U-shaped nickel-iron components provide for magnetic flux while the roughness of the horizontal portion of the U-shape allows for increased mechanical bonding to occur.
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公开(公告)号：US20230274879A1
公开(公告)日：2023-08-31
申请号：US17981303
申请日：2022-11-04
申请人： Atlas Magnetics
CPC分类号： H01F41/0206 , G06F30/12
摘要： The present invention comprises a specially designed means of air gap optimization for magnetically permeable material used in electrical components, for example, inductors and transformers. First, an ideal inductance over current curve is selected, and a core start point, endpoint, start angle, and end angle are selected within the core or along the core edges. Given the ideal curve and the starting conditions, an air gap is designed which meets or comes as close as possible to the ideal curve selected. Multiple air gaps can be designed in a single core. The inclusion of novel partial air gaps enables curves to be reached that optimize the core for high and low currents.
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公开(公告)号：US20230057305A1
公开(公告)日：2023-02-23
申请号：US17893108
申请日：2022-08-22
申请人： Atlas Magnetics
摘要： A complex-shaped air gap for electrical components utilizing magnetically permeable material. The air is enabled to thermally distribute heat through a magnetic core and thus reduce issues relating to heat localization. The air gap shape is maximized for length, and in the preferred embodiment is a spiral shape. The preferred embodiment is built by a lithography process, without cutting, to enable the thin spiraling shape.
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