公开(公告)号：US09353458B2

公开(公告)日：2016-05-31

申请号：US12225570

申请日：2007-02-05

申请人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

发明人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

IPC分类号： C30B23/02 ,  C30B25/10 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01L21/02 ,  C23C16/27 ,  H01J37/32 ,  H01J37/34

CPC分类号： C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

摘要： The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (α-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

摘要翻译： 本发明提供一种用于外延金刚石膜的基底，其能够通过使用CVD法在铱基上外延生长具有1英寸（2.5cm）或更大直径的大面积的高品质金刚石， 用于外延金刚石膜的基底衬底，用外延金刚石膜制成的外延金刚石膜和用于制造外延金刚石膜的方法。 通过真空沉积法或溅射法在单晶氧化镁（MgO）衬底或单晶蓝宝石（α-Al 2 O 3）衬底上外延生长形成铱（Ir）膜，并且偏置核生成工艺 通过将含离子的直流等离子体暴露于形成为膜的铱（Ir）基底的表面，将形成外延金刚石核的形成的铱（Ir）基底的表面施加于膜。

公开(公告)号：US07628856B2

公开(公告)日：2009-12-08

申请号：US11713036

申请日：2007-03-02

申请人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

发明人： Atsuhito Sawabe ,  Hitoshi Noguchi ,  Shintaro Maeda

IPC分类号： C30B29/02

CPC分类号： C30B25/18 ,  C30B29/04 ,  H01L21/0242 ,  H01L21/02425 ,  H01L21/02433 ,  H01L21/02444 ,  H01L21/02491 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658

摘要： There is disclosed a method for producing a substrate for single crystal diamond growth, comprising at least a step of preliminarily subjecting a substrate before single crystal diamond growth to a bias treatment for forming a diamond nucleus thereon by a direct-current discharge in which an electrode in a substrate side is a cathode, and wherein in the treatment, at least, a temperature of the substrate from 40 sec after an initiation of the bias treatment to an end of the bias treatment is held in a range of 800° C.±60° C. There can be provided a method for producing a substrate for single crystal diamond growth, by which a single crystal diamond can be grown more certainly.

摘要翻译： 公开了一种用于制造单晶金刚石生长用基板的方法，至少包括在单晶金刚石生长之前对基板进行预定处理以在其上形成金刚石核的偏压处理的步骤，其中直流放电是通过直流放电 在基板侧是阴极，并且其中在处理中，至少在偏置处理开始之后40秒至偏置处理结束之后，基板的温度保持在800℃的范围内 可以提供一种用于生产用于单晶金刚石生长的基底的方法，通过该方法可以更确定地生长单晶金刚石。

公开(公告)号：US20090176114A1

公开(公告)日：2009-07-09

申请号：US12225570

申请日：2007-02-05

申请人： Atsuhito Sawabe ,  Shintaro Maeda

发明人： Atsuhito Sawabe ,  Shintaro Maeda

IPC分类号： B32B15/04 ,  C30B23/02 ,  C23C14/34

CPC分类号： C30B23/02 ,  C23C16/272 ,  C30B25/105 ,  C30B25/18 ,  C30B29/02 ,  C30B29/04 ,  H01J37/32009 ,  H01J37/34 ,  H01J37/3447 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02491 ,  H01L21/02516 ,  H01L21/02527 ,  H01L21/0262

摘要： The present invention provides a base substrate for epitaxial diamond film capable of epitaxially growing a large area of high quality diamond, having a diameter of 1 inch (2.5 cm) or more, on an iridium base by using the CVD method, a method for producing the base substrate for epitaxial diamond film, an epitaxial diamond film produced with the base substrate for epitaxial diamond film and a method for producing the epitaxial diamond film. An iridium (Ir) film is formed by epitaxial growth on a single crystal magnesium oxide (MgO) substrate or a single crystal sapphire (α-Al2O3) substrate by means of a vacuum deposition method or a sputtering method, and a bias nucleus generation process of forming epitaxial diamond nuclei is applied to the surface of the iridium (Ir) base formed as a film by exposing an ion-containing direct current plasma to the surface of the iridium (Ir) base formed as a film.

摘要翻译： 本发明提供一种用于外延金刚石膜的基底，其能够通过使用CVD法在铱基上外延生长具有1英寸（2.5cm）或更大直径的大面积的高品质金刚石， 用于外延金刚石膜的基底衬底，用外延金刚石膜制成的外延金刚石膜和用于制造外延金刚石膜的方法。 通过真空沉积法或溅射法在单晶氧化镁（MgO）衬底或单晶蓝宝石（α-Al2O3）衬底上外延生长形成铱（Ir）膜，并且偏置核生成工艺 通过将含离子的直流等离子体暴露于形成为膜的铱（Ir）基底的表面，将形成外延金刚石核的形成的铱（Ir）基底的表面施加于膜。