公开(公告)号：US20130224964A1

公开(公告)日：2013-08-29

申请号：US13406791

申请日：2012-02-28

申请人： Atsuki Fukazawa ,  Noboru Takamure

发明人： Atsuki Fukazawa ,  Noboru Takamure

IPC分类号： H01L21/31

CPC分类号： H01L21/02167 ,  C23C16/325 ,  C23C16/4554 ,  C23C16/5096 ,  C23C16/56 ,  H01L21/02274 ,  H01L21/0228

摘要： A method of forming a dielectric film having Si—C bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: (i) adsorbing a precursor on a surface of a substrate; (ii) reacting the adsorbed precursor and a reactant gas on the surface; and (iii) repeating steps (i) and (ii) to form a dielectric film having at least Si—C bonds on the substrate. The precursor has a Si—C—Si bond in its molecule, and the reactant gas is oxygen-free and halogen-free and is constituted by at least a rare gas.

摘要翻译： 通过原子层沉积（ALD）在半导体衬底上形成具有Si-C键的电介质膜的方法包括：（i）在衬底的表面上吸附前体; （ii）使吸附的前体和表面上的反应气体反应; 和（iii）重复步骤（i）和（ii）以形成在衬底上具有至少Si-C键的电介质膜。 前体在其分子中具有Si-C-Si键，并且反应物气体是无氧的和无卤素的，并且由至少一种稀有气体构成。

公开(公告)号：US08329599B2

公开(公告)日：2012-12-11

申请号：US13030438

申请日：2011-02-18

申请人： Atsuki Fukazawa ,  Noboru Takamure

发明人： Atsuki Fukazawa ,  Noboru Takamure

IPC分类号： H01L21/00

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

摘要： A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

摘要翻译： 通过原子层沉积（ALD）在半导体衬底上形成具有至少Si-N，Si-C或Si-B键的电介质膜的方法包括：在衬底的表面上吸附前体; 在表面上提供反应气体; 使表面上的前体和反应气体反应; 并重复上述步骤以在基片上形成至少具有Si-N，Si-C或Si-B键的电介质膜。 前体在其分子中具有至少一个Si-C或Si-N键，至少一个烃和至少一个与硅连接的卤素。

公开(公告)号：US20120214318A1

公开(公告)日：2012-08-23

申请号：US13030438

申请日：2011-02-18

申请人： Atsuki Fukazawa ,  Noboru Takamure

发明人： Atsuki Fukazawa ,  Noboru Takamure

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/30 ,  C23C16/45553 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02274

摘要： A method of forming a dielectric film having at least Si—N, Si—C, or Si—B bonds on a semiconductor substrate by atomic layer deposition (ALD), includes: adsorbing a precursor on a surface of a substrate; supplying a reactant gas over the surface; reacting the precursor and the reactant gas on the surface; and repeating the above steps to form a dielectric film having at least Si—N, Si—C, or Si—B bonds on the substrate. The precursor has at least one Si—C or Si—N bond, at least one hydrocarbon, and at least one halogen attached to silicon in its molecule.

摘要翻译： 通过原子层沉积（ALD）在半导体衬底上形成具有至少Si-N，Si-C或Si-B键的电介质膜的方法包括：在衬底的表面上吸附前体; 在表面上提供反应气体; 使表面上的前体和反应气体反应; 并重复上述步骤以在基片上形成至少具有Si-N，Si-C或Si-B键的电介质膜。 前体在其分子中具有至少一个Si-C或Si-N键，至少一个烃和至少一个与硅连接的卤素。

公开(公告)号：US20090148964A1

公开(公告)日：2009-06-11

申请号：US11952891

申请日：2007-12-07

申请人： Naoto Tsuji ,  Kiyohiro Matsushita ,  Manabu Kato ,  Noboru Takamure

发明人： Naoto Tsuji ,  Kiyohiro Matsushita ,  Manabu Kato ,  Noboru Takamure

IPC分类号： H01L21/66

CPC分类号： H01L22/20 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31633 ,  H01L21/31695 ,  H01L22/12

摘要： A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher.

摘要翻译： 用于确定形成介电SiOCH膜的条件的方法包括：（i）在条件下在基板上形成介电SiOCH膜; （ii）使用步骤（i）中形成的膜的Si-CH 3键合强度与Si-O键合强度的比率来评估条件; （iii）如果比率为2.50％或更高，确认条件，如果该比率小于2.50％，则通过改变基座温度，上下电极之间的距离，RF功率中的至少一个来改变条件 ，固化时间; 和（iv）重复步骤（i）至（iii），直到该比率为2.50％或更高。

公开(公告)号：US07807566B2

公开(公告)日：2010-10-05

申请号：US11952891

申请日：2007-12-07

申请人： Naoto Tsuji ,  Kiyohiro Matsushita ,  Manabu Kato ,  Noboru Takamure

发明人： Naoto Tsuji ,  Kiyohiro Matsushita ,  Manabu Kato ,  Noboru Takamure

IPC分类号： H01L21/4763

CPC分类号： H01L22/20 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02203 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02348 ,  H01L21/31633 ,  H01L21/31695 ,  H01L22/12

摘要： A method for determining conditions for forming a dielectric SiOCH film, includes: (i) forming a dielectric SiOCH film on a substrate under conditions; (ii) evaluating the conditions using a ratio of Si—CH3 bonding strength to Si—O bonding strength of the film as formed in step (i); (iii) if the ratio is 2.50 % or higher, confirming the conditions, and if the ratio is less than 2.50 %, changing the conditions by changing at least one of the susceptor temperature, the distance between upper and lower electrodes, the RF power, and the curing time; and (iv) repeating steps (i) to (iii) until the ratio is 2.50 % or higher.

摘要翻译： 用于确定形成介电SiOCH膜的条件的方法包括：（i）在条件下在基板上形成介电SiOCH膜; （ii）使用步骤（i）中形成的膜的Si-CH 3键合强度与Si-O键合强度的比率来评估条件; （iii）如果比率为2.50％或更高，确认条件，如果该比率小于2.50％，则通过改变基座温度，上下电极之间的距离，RF功率中的至少一个来改变条件 ，固化时间; 和（iv）重复步骤（i）至（iii），直到该比率为2.50％或更高。