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公开(公告)号：US20130073270A1
公开(公告)日：2013-03-21
申请号：US13558561
申请日：2012-07-26
申请人： Atsushi Furuya , Yuji Uehara , Hirotaka Oshima
发明人： Atsushi Furuya , Yuji Uehara , Hirotaka Oshima
IPC分类号： G06G7/48
CPC分类号： H01F41/0246 , G01R33/0064 , G06F17/5009 , G06F2217/16 , H01F1/36
摘要： A computer-readable medium stores a magnetic substrate simulation program causing a computer to execute a process that includes calculating an effective magnetic field for each area of an element in the magnetic substrate, when magnetization of each area changes and based on a magnetic field generated from magnetic energy in each area and a rate of change of magnetization working in a direction inhibiting change in the average magnetization of the areas; obtaining for each area and based on the calculated effective magnetic fields and magnetization of each area, changes in magnetization and calculating for each area, magnetization after the changes; judging based on magnetization of each area before and after the changes, whether magnetization in the element converges; and storing a combination of the average magnetization of the areas for which magnetization in the given element converges and a static magnetic field based on the average magnetization.
摘要翻译： 计算机可读介质存储磁性基板模拟程序，使得计算机执行一个处理，该处理包括：当每个区域的磁化改变时，基于从磁场中产生的磁场，计算磁性基板中元件的每个区域的有效磁场 每个区域中的磁能和在抑制区域的平均磁化的变化的方向上的磁化作用的变化率; 获得每个区域，并根据计算的有效磁场和每个区域的磁化，改变每个区域的磁化强度和计算磁化强度; 根据变化前后各区域的磁化判断，元素中的磁化是否收敛; 并且存储基于平均磁化强度的给定元件中的磁化强度的区域的平均磁化强度与平均磁化强度的组合。
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公开(公告)号：US09263184B2
公开(公告)日：2016-02-16
申请号：US13558561
申请日：2012-07-26
申请人： Atsushi Furuya , Yuji Uehara , Hirotaka Oshima
发明人： Atsushi Furuya , Yuji Uehara , Hirotaka Oshima
CPC分类号： H01F41/0246 , G01R33/0064 , G06F17/5009 , G06F2217/16 , H01F1/36
摘要： A computer-readable medium stores a magnetic substrate simulation program causing a computer to execute a process that includes calculating an effective magnetic field for each area of an element in the magnetic substrate, when magnetization of each area changes and based on a magnetic field generated from magnetic energy in each area and a rate of change of magnetization working in a direction inhibiting change in the average magnetization of the areas; obtaining for each area and based on the calculated effective magnetic fields and magnetization of each area, changes in magnetization and calculating for each area, magnetization after the changes; judging based on magnetization of each area before and after the changes, whether magnetization in the element converges; and storing a combination of the average magnetization of the areas for which magnetization in the given element converges and a static magnetic field based on the average magnetization.
摘要翻译： 计算机可读介质存储磁性基板模拟程序，使得计算机执行一个处理，该处理包括：当每个区域的磁化改变时，基于从磁场中产生的磁场，计算磁性基板中元件的每个区域的有效磁场 每个区域中的磁能和在抑制区域的平均磁化的变化的方向上的磁化作用的变化率; 获得每个区域，并根据计算的有效磁场和每个区域的磁化，改变每个区域的磁化强度和计算磁化强度; 根据变化前后各区域的磁化判断，元素中的磁化是否收敛; 并且存储基于平均磁化强度的给定元件中的磁化强度的区域的平均磁化强度与平均磁化强度的组合。
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3.发明申请MAGNETO RESISTANCE EFFECT DEVICE, HEAD SLIDER, MAGNETIC INFORMATION STORAGE APPARATUS, AND MAGNETO RESISTANCE EFFECT MEMORY 审中-公开磁阻电阻装置，头滑块，磁信息存储装置和磁阻电阻效应存储器公开(公告)号：US20090207532A1
公开(公告)日：2009-08-20
申请号：US12371011
申请日：2009-02-13
申请人： Atsushi Furuya , Yuji Uehara , Kenji Noma
发明人： Atsushi Furuya , Yuji Uehara , Kenji Noma
IPC分类号： G11B5/33
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , G11C11/161 , G11C11/1673 , H01F10/3254 , H01F10/3268 , H01F41/307
摘要： A magneto resistance effect device includes a fixed magnetization portion including a ferromagnetic material, in which the magnetization direction can be fixed, and a tunnel barrier layer including high band gap metal oxide and low band gap metal oxide, and arranged on the fixed magnetization portion. The device includes a free magnetization portion including a ferromagnetic material, arranged on the tunnel barrier layer, in which the magnetization can be changed.
摘要翻译： 磁阻效应器件包括固定磁化部分，该固定磁化部分包括其中可固定磁化方向的铁磁材料和包括高带隙金属氧化物和低带隙金属氧化物的隧道势垒层，并且布置在固定磁化部分上。 该装置包括布置在隧道势垒层上的铁磁材料的自由磁化部分，其中磁化可以改变。
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4.发明申请公开(公告)号：US20090169915A1
公开(公告)日：2009-07-02
申请号：US12340236
申请日：2008-12-19
CPC分类号： B32B37/06 , B32B2307/208 , B32B2309/02 , B32B2309/105 , B32B2309/68 , B32B2311/00 , B32B2457/00 , H01L43/08 , H01L43/12 , Y10T29/49041 , Y10T29/49043 , Y10T29/49044 , Y10T29/49046 , Y10T156/10 , Y10T428/12465
摘要： The method of the present invention provides a magnetoresistance effect element, which is capable of having a high MR ratio, corresponding to high density recording and being suitably applied to a magnetoresistance device even though a barrier layer is thinned to reduce resistance of the magnetoresistance effect element. The method of producing the magnetoresistance effect element, which includes the barrier layer composed of an oxidized metal, a first magnetic layer contacting one of surfaces of the barrier layer and a second magnetic layer contacting the other surface thereof, comprises the steps of: laminating the barrier layer on the first magnetic layer with using a target composed of the oxidized metal; and laminating the second magnetic layer on the barrier layer. The barrier layer is annealed before laminating the second magnetic layer thereon.
摘要翻译： 本发明的方法提供了一种磁阻效应元件，其能够具有对应于高密度记录的高MR比，并且适当地应用于磁阻器件，即使势垒层变薄以降低磁阻效应元件的电阻 。 制造磁阻效应元件的方法，其包括由氧化金属构成的阻挡层，与阻挡层的一个表面接触的第一磁性层和与其另一个表面接触的第二磁性层，包括以下步骤： 使用由氧化金属构成的靶，在第一磁性层上形成阻挡层; 并将第二磁性层层叠在阻挡层上。 在层叠第二磁性层之前对阻挡层进行退火。
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公开(公告)号：US20090168270A1
公开(公告)日：2009-07-02
申请号：US12342419
申请日：2008-12-23
IPC分类号： G11B5/33
CPC分类号： H01L43/08 , B82Y25/00 , G01R33/093 , G11B5/3906 , H01F10/3254 , H01F10/3272 , H01F10/3295
摘要： In comparison with conventional exchange-coupled elements, the exchange-coupled element of the present invention has greater unidirectional magnetization anisotropy. The exchange-coupled element comprises: an ordered antiferromagnetic layer; and a pinned magnetic layer being exchange-coupled with the ordered antiferromagnetic layer, the pinned magnetic layer having unidirectional magnetization anisotropy. The pinned magnetic layer is constituted by a first pinned magnetic layer having a composition, which can have a face-centered cubic lattice structure, and a second pinned magnetic layer having a composition, which can have a body-centered cubic lattice structure.
摘要翻译： 与传统的交换耦合元件相比，本发明的交换耦合元件具有更大的单向磁化各向异性。 交换耦合元件包括：有序反铁磁层; 并且被钉扎的磁性层与有序的反铁磁层交换耦合，钉扎的磁性层具有单向磁化各向异性。 钉扎磁性层由具有面心立方晶格结构的组成的第一固定磁性层和具有体心立方晶格结构的具有组成的第二固定磁性层构成。
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公开(公告)号：US20060209458A1
公开(公告)日：2006-09-21
申请号：US11158257
申请日：2005-06-21
申请人： Junichi Kane , Yuji Uehara , Kenji Noma , Akifumi Chikazawa
发明人： Junichi Kane , Yuji Uehara , Kenji Noma , Akifumi Chikazawa
IPC分类号： G11B5/147
CPC分类号： G11B5/3116 , B82Y10/00 , B82Y25/00 , G11B5/3146 , H01F10/14 , H01F10/16 , H01F10/265
摘要： The soft magnetic film has superior soft magnetic characteristics and is suitable for a thin film magnetic head. The soft magnetic film of the present invention comprises: a magnetic base layer including a ferromagnetic element; and a ferromagnetic layer being piled on the magnetic base layer. The soft magnetic film has uniaxial magnetic anisotropy. The magnetic base layer includes at least one element selected from Fe, Ni and Co as the ferromagnetic element.
摘要翻译： 软磁膜具有优良的软磁特性，适用于薄膜磁头。 本发明的软磁性膜包括：包含铁磁性元件的磁性基层; 并且铁磁层堆叠在磁性基底层上。 软磁膜具有单轴磁各向异性。 磁性基层包括选自Fe，Ni和Co中的至少一种元素作为铁磁性元素。
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7.发明授权Thin film head with nickel-iron alloy non-magnetic substratum between non-magnetic gap layer and upper magnetic pole layer 失效薄膜头与镍 - 铁合金非磁性基底之间的非磁隙层和上磁极层之间公开(公告)号：US06970324B2
公开(公告)日：2005-11-29
申请号：US10299177
申请日：2002-11-19
申请人： Shoji Ikeda , Takayuki Kubomiya , Ikuya Tagawa , Yuji Uehara
发明人： Shoji Ikeda , Takayuki Kubomiya , Ikuya Tagawa , Yuji Uehara
CPC分类号： H01F10/26 , G11B5/3109 , G11B5/313 , G11B5/3967 , H01F10/16
摘要： A soft magnetic film includes a ferromagnetic layer. The ferromagnetic layer is laid over a non-magnetic substructure including ferromagnetic atoms. The uniaxial magnetic anisotropy may be established in the ferromagnetic layer. Since a magnetic property is not required in the substructure under the ferromagnetic layer, the soft magnetic film of this type may be utilized for purposes of wider variations.
摘要翻译： 软磁性膜包括铁磁层。 铁磁层铺设在包括铁磁原子的非磁性子结构之上。 可以在铁磁层中建立单轴磁各向异性。 由于在铁磁层下的亚结构中不需要磁性，所以这种类型的软磁膜可以用于较宽的变化。
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公开(公告)号：US06605414B2
公开(公告)日：2003-08-12
申请号：US09439724
申请日：1999-11-12
申请人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
发明人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
IPC分类号： G03F730
CPC分类号： G11B5/3903 , G11B5/3116 , G11B5/3163 , G11B5/3906 , G11B5/398 , Y10S438/911
摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.
摘要翻译： 本发明的磁电阻头的制造方法包括以下步骤：在构成磁阻器件的多层膜上形成有机膜，在有机膜上形成由抗蚀剂或无机膜形成的上层膜，使有机膜和上层 薄膜，从上部膜图案的边缘向内切割成有机膜图案的边缘，使得形成在上部膜和多层膜上的薄膜的颗粒不与有机膜图案的侧部接触。
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公开(公告)号：US6052261A
公开(公告)日：2000-04-18
申请号：US669610
申请日：1996-06-24
申请人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
发明人： Keiji Watanabe , Koji Nozaki , Miwa Igarashi , Yoko Kuramitsu , Ei Yano , Takahisa Namiki , Hiroshi Shirataki , Keita Ohtsuka , Michiaki Kanamine , Yuji Uehara
CPC分类号： G11B5/3903 , G11B5/3906 , G11B5/3116 , G11B5/3163 , G11B5/398 , Y10S438/911
摘要： A method for manufacturing a magnetoresistance head of the present invention comprises the steps of forming an organic film on a multilayered film constituting a magnetoresistance device, forming an upper film formed of resist or inorganic film on the organic film, patterning the organic film and the upper film, cutting into edges of the organic film patterns from edges of the upper film patterns inwardly to such an extent that particles of the thin film being formed on the upper film and the multilayered film do not contact to side portions of the organic film patterns.
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公开(公告)号：US5792546A
公开(公告)日：1998-08-11
申请号：US289204
申请日：1994-08-12
申请人： Michiaki Kanamine , Hitoshi Kanai , Junichi Kane , Junzo Toda , Yuji Uehara
发明人： Michiaki Kanamine , Hitoshi Kanai , Junichi Kane , Junzo Toda , Yuji Uehara
CPC分类号： G11B5/3932 , G11B5/3903 , G11B5/3912 , G11B5/3967 , G11B5/3163 , Y10S428/90 , Y10T428/1171 , Y10T428/24942 , Y10T428/2495
摘要： A magneto-resistive head is provided with a substrate, a lower shield layer made of a Fe-system magnetic material and provided above the substrate, and a non-magnetic insulator layer provided above the lower shield layer. The non-magnetic insulator layer has a function of suppressing deterioration of surface roughness of the lower shield layer when subjected to an annealing process under a magnetic field in order to improve magnetic characteristics of the lower shield layer to desired magnetic characteristics.
摘要翻译： 磁阻头设置有基板，由Fe系磁性材料制成并设置在基板上方的下屏蔽层，以及设置在下屏蔽层上方的非磁性绝缘体层。 非磁性绝缘体层具有在磁场下进行退火处理时抑制下屏蔽层的表面粗糙度劣化的功能，以便将下屏蔽层的磁特性改善为期望的磁特性。
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