公开(公告)号：US20130112935A1

公开(公告)日：2013-05-09

申请号：US13810245

申请日：2011-11-30

申请人： Atsushi Himeno ,  Haruyuki Sorada ,  Yukio Hayakawa ,  Takumi Mikawa

发明人： Atsushi Himeno ,  Haruyuki Sorada ,  Yukio Hayakawa ,  Takumi Mikawa

IPC分类号： H01L45/00

CPC分类号： H01L45/1253 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1675

摘要： A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.

摘要翻译： 根据本发明的非易失性存储元件包括第一金属线; 形成在所述第一金属线上并连接到所述第一金属线的插头; 包括第一电极，第二电极和可变电阻层的堆叠结构，所述堆叠结构形成在连接到所述第一电极的插头上; 形成在所述堆叠结构上并直接连接到所述第二电极的第二金属线; 以及侧壁保护层，其覆盖层叠结构的侧壁，并且具有绝缘性和氧阻隔性，其中第二金属线的下表面的一部分位于堆叠结构的上表面的下方。

公开(公告)号：US09214628B2

公开(公告)日：2015-12-15

申请号：US13810245

申请日：2011-11-30

申请人： Atsushi Himeno ,  Haruyuki Sorada ,  Yukio Hayakawa ,  Takumi Mikawa

发明人： Atsushi Himeno ,  Haruyuki Sorada ,  Yukio Hayakawa ,  Takumi Mikawa

IPC分类号： H01L45/00 ,  H01L27/10 ,  H01L27/24 ,  H01L27/105

CPC分类号： H01L45/1253 ,  H01L27/101 ,  H01L27/1052 ,  H01L27/2409 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1625 ,  H01L45/1675

摘要： A nonvolatile memory element according to the present invention includes a first metal line; a plug formed on the first metal line and connected to the first metal line; a stacked structure including a first electrode, a second electrode, and a variable resistance layer, the stacked structure being formed on a plug which is connected to the first electrode; a second metal line formed on the stacked structure and directly connected to the second electrode; and a side wall protective layer which covers the side wall of the stacked structure and has an insulating property and an oxygen barrier property, wherein part of a lower surface of the second metal line is located under an upper surface of the stacked structure.

摘要翻译： 根据本发明的非易失性存储元件包括第一金属线; 形成在所述第一金属线上并连接到所述第一金属线的插头; 包括第一电极，第二电极和可变电阻层的堆叠结构，所述堆叠结构形成在连接到所述第一电极的插头上; 形成在所述堆叠结构上并直接连接到所述第二电极的第二金属线; 以及侧壁保护层，其覆盖层叠结构的侧壁，并且具有绝缘性和氧阻隔性，其中第二金属线的下表面的一部分位于堆叠结构的上表面的下方。

公开(公告)号：US08618526B2

公开(公告)日：2013-12-31

申请号：US13501228

申请日：2011-08-11

申请人： Haruyuki Sorada ,  Takeki Ninomiya ,  Takumi Mikawa ,  Yukio Hayakawa

发明人： Haruyuki Sorada ,  Takeki Ninomiya ,  Takumi Mikawa ,  Yukio Hayakawa

IPC分类号： H01L47/00

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1675

摘要： Provided are a nonvolatile memory device which can suppress non-uniformity in initial breakdown voltages among nonvolatile memory elements and prevent reduction of yield, and a manufacturing method thereof. The nonvolatile memory device includes a nonvolatile memory element (108) having a stacked-layer structure in which a resistance variable layer (106) is parallel to a main surface of a substrate (117) and is planarized, and a plug (103) electrically connected to either a first electrode (105) or a second electrode (107), and an area of an end surface of a plug (103) at which the plug (103) and the nonvolatile memory element (108) are connected together, the end surface being parallel to the main surface of the substrate (117), is greater than a cross-sectional area of a cross-section of a first transition metal oxide layer (115) which is an electrically-conductive region, the cross-section being parallel to the main surface of the substrate (117).

摘要翻译： 提供一种能够抑制非易失性存储元件之间的初始击穿电压的不均匀性并且防止产量降低的非易失性存储器件及其制造方法。 非易失性存储器件包括具有堆叠层结构的非易失性存储元件（108），其中电阻变化层（106）平行于衬底（117）的主表面并被平坦化;以及电极（103） 连接到第一电极（105）或第二电极（107），以及插头（103）的端面（103）的与插头（103）和非易失性存储元件（108）连接在一起的区域， 平行于基板（117）的主表面的端面大于作为导电区域的第一过渡金属氧化物层（115）的截面的横截面积，横截面 平行于基板（117）的主表面。

公开(公告)号：US20120199805A1

公开(公告)日：2012-08-09

申请号：US13501228

申请日：2011-08-11

申请人： Haruyuki Sorada ,  Takeki Ninomiya ,  Takumi Mikawa ,  Yukio Hayakawa

发明人： Haruyuki Sorada ,  Takeki Ninomiya ,  Takumi Mikawa ,  Yukio Hayakawa

IPC分类号： H01L47/00 ,  H01L21/02

CPC分类号： H01L27/101 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1675

摘要： Provided are a nonvolatile memory device which can suppress non-uniformity in initial breakdown voltages among nonvolatile memory elements and prevent reduction of yield, and a manufacturing method thereof. The nonvolatile memory device includes a nonvolatile memory element (108) having a stacked-layer structure in which a resistance variable layer (106) is parallel to a main surface of a substrate (117) and is planarized, and a plug (103) electrically connected to either a first electrode (105) or a second electrode (107), and an area of an end surface of a plug (103) at which the plug (103) and the nonvolatile memory element (108) are connected together, the end surface being parallel to the main surface of the substrate (117), is greater than a cross-sectional area of a cross-section of a first transition metal oxide layer (115) which is an electrically-conductive region, the cross-section being parallel to the main surface of the substrate (117).

摘要翻译： 提供一种能够抑制非易失性存储元件之间的初始击穿电压的不均匀性并且防止产量降低的非易失性存储器件及其制造方法。 非易失性存储器件包括具有堆叠层结构的非易失性存储元件（108），其中电阻变化层（106）平行于衬底（117）的主表面并被平坦化;以及电极（103） 连接到第一电极（105）或第二电极（107），以及插头（103）的端面（103）的与插头（103）和非易失性存储元件（108）连接在一起的区域， 平行于基板（117）的主表面的端面大于作为导电区域的第一过渡金属氧化物层（115）的截面的横截面积，横截面 平行于基板（117）的主表面。

公开(公告)号：US20140197368A1

公开(公告)日：2014-07-17

申请号：US14343441

申请日：2012-09-10

申请人： Shinichi Yoneda ,  Takumi Mikawa ,  Satoru Ito ,  Yukio Hayakawa ,  Atsushi Himeno

发明人： Shinichi Yoneda ,  Takumi Mikawa ,  Satoru Ito ,  Yukio Hayakawa ,  Atsushi Himeno

IPC分类号： H01L45/00

CPC分类号： H01L45/124 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1625 ,  H01L45/1675

摘要： A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.

摘要翻译： 一种非易失性存储元件，包括：第一电极; 第二电极; 在第一电极和第二电极之间的可变电阻层，并且包括作为堆叠层的连接到第一电极的第一可变电阻层和连接到第二电极的第二可变电阻层; 以及具有阻氧性并覆盖可变电阻层的侧面的侧壁保护层。 第一可变电阻层包括形成在第一金属氧化物周围的第一金属氧化物和第三金属氧化物，其氧缺陷低于第一金属氧化物，第二可变电阻层包括具有氧缺乏的第二金属氧化物 低于第一金属氧化物。

公开(公告)号：US09680093B2

公开(公告)日：2017-06-13

申请号：US14343441

申请日：2012-09-10

申请人： Shinichi Yoneda ,  Takumi Mikawa ,  Satoru Ito ,  Yukio Hayakawa ,  Atsushi Himeno

发明人： Shinichi Yoneda ,  Takumi Mikawa ,  Satoru Ito ,  Yukio Hayakawa ,  Atsushi Himeno

IPC分类号： H01L45/00 ,  H01L27/24

CPC分类号： H01L45/124 ,  H01L27/2409 ,  H01L27/2436 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1625 ,  H01L45/1675

摘要： A nonvolatile memory element including: a first electrode; a second electrode; a variable resistance layer that is between the first electrode and the second electrode and includes, as stacked layers, a first variable resistance layer connected to the first electrode and a second variable resistance layer connected to the second electrode; and a side wall protecting layer that has oxygen barrier properties and covers a side surface of the variable resistance layer. The first variable resistance layer includes a first metal oxide and a third metal oxide formed around the first metal oxide and having an oxygen deficiency lower than that of the first metal oxide, and the second variable resistance layer includes a second metal oxide having an oxygen deficiency lower than that of the first metal oxide.

公开(公告)号：US09000506B2

公开(公告)日：2015-04-07

申请号：US13501624

申请日：2011-11-18

申请人： Takeki Ninomiya ,  Takumi Mikawa ,  Yukio Hayakawa

发明人： Takeki Ninomiya ,  Takumi Mikawa ,  Yukio Hayakawa

IPC分类号： H01L27/108 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L45/146 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1675

摘要： A nonvolatile memory element which inhibits deterioration of an oxygen concentration profile of a variable resistance layer due to a thermal budget and is able to stably operate at low voltages, and a method for manufacturing the nonvolatile memory element are provided. The nonvolatile memory element includes a first electrode layer formed above a substrate, a variable resistance layer disposed on the first electrode layer, and a second electrode layer disposed on the variable resistance layer, and the variable resistance layer has a two-layer structure in which an oxygen- and/or nitrogen-deficient tantalum oxynitride layer and a tantalum oxide layer are stacked.

摘要翻译： 提供一种非易失性存储元件，其抑制由于热预算导致的可变电阻层的氧浓度分布的劣化，并能够在低电压下稳定地工作，并且提供了一种制造非易失性存储元件的方法。 非易失性存储元件包括形成在基板上的第一电极层，设置在第一电极层上的可变电阻层和设置在可变电阻层上的第二电极层，可变电阻层具有两层结构，其中 氧和/或氮缺乏的氮氧化钽层和氧化钽层被堆叠。

公开(公告)号：US20130171799A1

公开(公告)日：2013-07-04

申请号：US13823667

申请日：2011-09-16

申请人： Ryoko Miyanaga ,  Takumi Mikawa ,  Yukio Hayakawa ,  Takeki Ninomiya ,  Koji Arita

发明人： Ryoko Miyanaga ,  Takumi Mikawa ,  Yukio Hayakawa ,  Takeki Ninomiya ,  Koji Arita

IPC分类号： H01L45/00 ,  H01L21/768

CPC分类号： H01L45/16 ,  H01L21/768 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2418 ,  H01L45/00 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A current steering element (100) formed such that the current steering element covers a lower opening (105) of a via hole (104) formed in an interlayer insulating layer (102), comprises: a corrosion-suppressing layer (106) formed on a lower side of a lower opening of the via hole such that the corrosion-suppressing layer covers an entire portion of the lower opening; a second electrode layer (108) formed under the corrosion-suppressing layer and comprising a material different from a material of the corrosion-suppressing layer; a current steering layer (110) formed under the second electrode layer such that the current steering layer is physically in contact with the second electrode layer; and a first electrode layer (112) formed under the current steering layer such that the first electrode layer is physically in contact with the current steering layer; and the first electrode layer, the current steering layer and the second electrode layer constitute one of a MSM diode and a MIM diode.

摘要翻译： 一种形成为当前的操舵元件覆盖形成在层间绝缘层（102）中的通孔（104）的下开口（105）的电流控制元件（100），包括：形成在 通孔的下开口的下侧，使得防蚀层覆盖下开口的整个部分; 形成在所述腐蚀抑制层下方并且包含不同于所述腐蚀抑制层的材料的材料的第二电极层（108） 形成在所述第二电极层下方的电流转向层（110），使得所述电流导向层物理地与所述第二电极层接触; 以及第一电极层（112），形成在所述电流导向层下方，使得所述第一电极层物理地与所述电流转向层接触; 并且第一电极层，电流导向层和第二电极层构成MSM二极管和MIM二极管之一。

公开(公告)号：US08530321B2

公开(公告)日：2013-09-10

申请号：US13515761

申请日：2010-12-14

申请人： Takeki Ninomiya ,  Yoshio Kawashima ,  Yukio Hayakawa ,  Takumi Mikawa

发明人： Takeki Ninomiya ,  Yoshio Kawashima ,  Yukio Hayakawa ,  Takumi Mikawa

IPC分类号： H01L21/20

CPC分类号： C23C26/00 ,  C23C28/00 ,  H01L27/2436 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/16 ,  H01L45/1675

摘要： A variable resistance element comprises, when M is a transition metal element, O is oxygen, and x and y are positive numbers satisfying y>x; a lower electrode; a first oxide layer formed on the lower electrode and comprising MOx when a content ratio of O with respect to M is x; a second oxide layer formed on the first oxide layer and comprising MOy when a content ratio of O with respect to M is y; an upper electrode formed on the second oxide layer; a protective layer formed on the upper electrode and comprising an electrically conductive material having a composition different from a composition of the upper electrode; an interlayer insulating layer formed to cover the protective layer; and an upper contact plug formed inside an upper contact hole penetrating the interlayer insulating layer.

摘要翻译： 可变电阻元件包括当M是过渡金属元素时，O是氧，x和y是满足y> x的正数; 下电极 当相对于M的含量比为O时，形成在下电极上并包含MOx的第一氧化物层; 当相对于M的含量比为O时，形成在第一氧化物层上并包含MOy的第二氧化物层; 形成在所述第二氧化物层上的上电极; 形成在上电极上并具有不同于上电极的组成的组成的导电材料的保护层; 形成为覆盖保护层的层间绝缘层; 以及形成在贯穿层间绝缘层的上接触孔内部的上接触插塞。

公开(公告)号：US20130178042A1

公开(公告)日：2013-07-11

申请号：US13809473

申请日：2012-01-30

申请人： Takeki Ninomiya ,  Yukio Hayakawa ,  Takumi Mikawa ,  Takeshi Takagi

发明人： Takeki Ninomiya ,  Yukio Hayakawa ,  Takumi Mikawa ,  Takeshi Takagi

IPC分类号： H01L45/00

CPC分类号： H01L45/1641 ,  G11C13/0007 ,  H01L45/08 ,  H01L45/146 ,  H01L45/1608 ,  H01L45/1675

摘要： Provided is a method for manufacturing a variable resistance element, the method including: forming a first electrode material layer above a substrate; forming a first tantalum oxide material layer; forming a second tantalum oxide material layer; forming a second electrode material layer; and annealing at least the first tantalum oxide material layer after forming the first tantalum oxide material layer and before forming the second electrode material layer, wherein an oxygen content percentage of one of the first tantalum oxide material layer and the second tantalum oxide material layer is higher than an oxygen content percentage of the other.

摘要翻译： 提供一种制造可变电阻元件的方法，该方法包括：在衬底上形成第一电极材料层; 形成第一钽氧化物材料层; 形成第二钽氧化物材料层; 形成第二电极材料层; 以及在形成所述第一钽氧化物材料层之后并且在形成所述第二电极材料层之前至少退火所述第一钽氧化物材料层，其中所述第一钽氧化物材料层和所述第二氧化钽材料层中的一个的氧含量百分比较高 比另一个的氧含量百分比。