公开(公告)号：US07819104B2

公开(公告)日：2010-10-26

申请号：US12373875

申请日：2007-07-17

申请人： Atsushi Ito ,  Eiji Sakagami

发明人： Atsushi Ito ,  Eiji Sakagami

IPC分类号： F02M35/10

CPC分类号： F02D9/16 ,  F02B27/0215 ,  F02B27/0263 ,  F02B27/0284 ,  Y02T10/146

摘要： An intake apparatus for an internal combustion engine comprises an intake manifold (1); a rotary valve (10) including a plurality of valve portions (11) in communication with air feeding passages (3) through feed switch openings (7); a sealing member (60) fitted to the valve portion, the sealing member including ring portions (61) and interconnecting portions interconnecting the ring portions, recessed portions (76) defined on an outer side of the valve portions for receiving engaging portions (64) on inner sides of the interconnecting portions of the sealing members, wherein a distance (D1a) from a central portion of an outer peripheral edge (20a) of the closed area portion (20) to the rotational axis (P) is set smaller than a distance (D2) from a second central portion (43) of an outer peripheral edge (40a) of the open area portion (40) to the rotational axis.

摘要翻译： 一种用于内燃机的进气装置，包括进气歧管（1）; 旋转阀（10），包括通过进料开关开口（7）与进气通道（3）连通的多个阀部分（11）; 密封构件（60），其装配到所述阀部分，所述密封构件包括环部（61）和互连所述环部分的互连部分，限定在所述阀部分的外侧的凹部（76），用于接收接合部分（64） 在密封构件的互连部分的内侧上，其中从封闭区域部分（20）的外周边缘（20a）的中心部分到旋转轴线（P）的距离（D1a）被设定为小于 距开口区域部分（40）的外围边缘（40a）的第二中心部分（43）与旋转轴线的距离（D2）。

公开(公告)号：US08479699B2

公开(公告)日：2013-07-09

申请号：US12373861

申请日：2007-07-17

申请人： Atsushi Ito ,  Eiji Sakagami

发明人： Atsushi Ito ,  Eiji Sakagami

IPC分类号： F02M35/10

CPC分类号： F02B27/0284 ,  F02B27/0215 ,  F02B27/0263 ,  Y02T10/146

摘要： An intake apparatus for an internal combustion engine comprises an intake manifold (1) with air feeding passages (3) adapted to be connected to and feed air to cylinders of an engine; a rotary valve (10) including a plurality of valve portions (11) in communication with the air feeding passages (3) through feed switch openings (7); a sealing member (60) fitted to the valve portion, the sealing member including ring portions (61) and interconnecting portions interconnecting the ring portions, recessed portions (76) defined on an outer side of the valve portions for receiving engaging portions (64) on inner sides of the interconnecting portions of the sealing members, wherein when the rotary valve is in the closed position, a first sealing gap (A) between the engaging portion and an inner face (77) of the recessed portion is set smaller than a valve gap (C) between the valve portion and the bore portion (8).

摘要翻译： 用于内燃机的进气装置包括：进气歧管（1），其具有适于连接到发动机气缸并将空气供给到发动机气缸的供气通道（3） 旋转阀（10），包括通过进料开关开口（7）与进气通道（3）连通的多个阀部分（11）; 密封构件（60），其装配到所述阀部分，所述密封构件包括环部（61）和互连所述环部分的互连部分，限定在所述阀部分的外侧的凹部（76），用于接收接合部分（64） 在所述密封构件的互连部的内侧，当所述旋转阀处于所述关闭位置时，所述接合部与所述凹部的内面（77）之间的第一密封间隙（A）被设定为小于 阀部分和孔部分（8）之间的阀间隙（C）。

公开(公告)号：US20090283065A1

公开(公告)日：2009-11-19

申请号：US12373875

申请日：2007-07-17

申请人： Atsushi Ito ,  Eiji Sakagami

发明人： Atsushi Ito ,  Eiji Sakagami

IPC分类号： F02M35/10 ,  F16K1/22

CPC分类号： F02D9/16 ,  F02B27/0215 ,  F02B27/0263 ,  F02B27/0284 ,  Y02T10/146

摘要： An intake apparatus for an internal combustion engine comprises an intake manifold (1); a rotary valve (10) including a plurality of valve portions (11) in communication with air feeding passages (3) through feed switch openings (7); a sealing member (60) fitted to the valve portion, the sealing member including ring portions (61) and interconnecting portions interconnecting the ring portions, recessed portions (76) defined on an outer side of the valve portions for receiving engaging portions (64) on inner sides of the interconnecting portions of the sealing members, wherein a distance (D1a) from a central portion of an outer peripheral edge (20a) of the closed area portion (20) to the rotational axis (P) is set smaller than a distance (D2) from a second central portion (43) of an outer peripheral edge (40a) of the open area portion (40) to the rotational axis.

摘要翻译： 一种用于内燃机的进气装置，包括进气歧管（1）; 旋转阀（10），包括通过进料开关开口（7）与进气通道（3）连通的多个阀部分（11）; 密封构件（60），其装配到所述阀部分，所述密封构件包括环部（61）和互连所述环部分的互连部分，限定在所述阀部分的外侧的凹部（76），用于接收接合部分（64） 在密封构件的互连部分的内侧上，其中从封闭区域部分（20）的外周边缘（20a）的中心部分到旋转轴线（P）的距离（D1a）被设定为小于 距开口区域部分（40）的外围边缘（40a）的第二中心部分（43）与旋转轴线的距离（D2）。

公开(公告)号：US20090288629A1

公开(公告)日：2009-11-26

申请号：US12373861

申请日：2007-07-17

申请人： Atsushi Ito ,  Eiji Sakagami

发明人： Atsushi Ito ,  Eiji Sakagami

IPC分类号： F02M35/10

CPC分类号： F02B27/0284 ,  F02B27/0215 ,  F02B27/0263 ,  Y02T10/146

摘要： An intake apparatus for an internal combustion engine comprises an intake manifold (1) with air feeding passages (3) adapted to be connected to and feed air to cylinders of an engine; a rotary valve (10) including a plurality of valve portions (11) in communication with the air feeding passages (3) through feed switch openings (7); a sealing member (60) fitted to the valve portion, the sealing member including ring portions (61) and interconnecting portions interconnecting the ring portions, recessed portions (76) defined on an outer side of the valve portions for receiving engaging portions (64) on inner sides of the interconnecting portions of the sealing members, wherein when the rotary valve is in the closed position, a first sealing gap (A) between the engaging portion and an inner face (77) of the recessed portion is set smaller than a valve gap (C) between the valve portion and the bore portion (8).

摘要翻译： 用于内燃机的进气装置包括：进气歧管（1），其具有适于连接到发动机气缸并将空气供给到发动机气缸的供气通道（3） 旋转阀（10），包括通过进料开关开口（7）与进气通道（3）连通的多个阀部分（11）; 密封构件（60），其装配到所述阀部分，所述密封构件包括环部（61）和互连所述环部分的互连部分，限定在所述阀部分的外侧的凹部（76），用于接收接合部分（64） 在所述密封构件的互连部的内侧，当所述旋转阀处于所述关闭位置时，所述接合部与所述凹部的内面（77）之间的第一密封间隙（A）被设定为小于 阀部分和孔部分（8）之间的阀间隙（C）。

公开(公告)号：US07763929B2

公开(公告)日：2010-07-27

申请号：US11618336

申请日：2006-12-29

申请人： Eiji Sakagami

发明人： Eiji Sakagami

IPC分类号： H01L29/788 ,  H01L29/792

CPC分类号： H01L27/105 ,  H01L27/115 ,  H01L27/11521 ,  H01L27/11526 ,  H01L27/11543

摘要： A nonvolatile semiconductor memory device includes floating gates, source areas, drain areas, word lines, diffusion layers, source lines and shield wires. The source area is shared by the floating gates adjacent to each other in a column direction. The drain area faces the source area in the column direction with the floating gate. The drain area is wider than the source area in the column direction. The diffusion layer is formed on an inner wall of a trench made between the source areas adjacent to each other in the same row direction and electrically connects the adjacent source areas together. The source line is formed of the source area and diffusion layer on the same row. The shield wire is disposed on and along the source line. A top surface of the shield wire is lower than that of the floating gate adjacent to the shield wire.

摘要翻译： 非易失性半导体存储器件包括浮置栅极，源极区域，漏极区域，字线，扩散层，源极线和屏蔽线。 源极区域由在列方向上彼此相邻的浮动栅极共享。 漏极区域与浮动栅极面对列方向的源极区域。 排水区域比列方向的源区域宽。 扩散层形成在形成在相邻行方向上彼此相邻的源极区域之间的沟槽的内壁上，并将相邻的源极区域电连接在一起。 源极线由同一行上的源极区域和扩散层形成。 屏蔽线设置在源极线上并沿着源极线。 屏蔽线的顶面低于与屏蔽线相邻的浮动栅极的顶面。

公开(公告)号：US20050285219A1

公开(公告)日：2005-12-29

申请号：US11216147

申请日：2005-09-01

申请人： Eiji Sakagami

发明人： Eiji Sakagami

IPC分类号： H01L21/8247 ,  H01L21/28 ,  H01L21/336 ,  H01L21/76 ,  H01L21/8234 ,  H01L21/8246 ,  H01L27/088 ,  H01L27/10 ,  H01L27/115 ,  H01L29/51 ,  H01L29/788 ,  H01L29/792 ,  H01L29/00 ,  H01L21/335

CPC分类号： H01L21/28202 ,  H01L27/115 ,  H01L27/11568 ,  H01L29/513 ,  H01L29/518 ,  H01L29/66833 ,  H01L29/792

摘要： A charge storage layer (112) in a gate insulating film of a cell transistor is so formed as not to extend from a channel region of a cell to an element isolation region. Since no electric charge moves from the charge storage layer (112) on the channel onto the element isolation region, the charge retention characteristics improves. Unlike a gate insulating film of a cell transistor, a gate insulating film of a selection transistor is formed without including the charge storage layer (112). This stabilizes read operation because the threshold value of the transistor does not vary. Of peripheral transistors, a thick gate oxide film is formed for a transistor requiring a high-breakdown-voltage gate oxide film, and a thin gate oxide film is formed for a transistor requiring high drivability. This realizes a high operating speed.

摘要翻译： 电池晶体管的栅极绝缘膜中的电荷存储层（112）形成为不从单元的沟道区延伸到元件隔离区。 由于没有电荷从沟道上的电荷存储层（112）移动到元件隔离区上，所以电荷保持特性提高。 与单元晶体管的栅极绝缘膜不同，形成选择晶体管的栅极绝缘膜，而不包括电荷存储层（112）。 这使得读取操作稳定，因为晶体管的阈值不变。 在外围晶体管中，形成了要求高耐压栅氧化膜的晶体管的厚栅氧化膜，并且形成了要求高驱动能力的晶体管的薄栅氧化膜。 这实现了高的运行速度。

公开(公告)号：US20050116304A1

公开(公告)日：2005-06-02

申请号：US11031044

申请日：2005-01-10

申请人： Masahisa Sonoda ,  Tadashi Iguchi ,  Hiroaki Tsunoda ,  Eiji Sakagami

发明人： Masahisa Sonoda ,  Tadashi Iguchi ,  Hiroaki Tsunoda ,  Eiji Sakagami

IPC分类号： H01L21/76 ,  H01L21/762 ,  H01L21/8234 ,  H01L21/8247 ,  H01L27/115 ,  H01L29/78 ,  H01L29/788 ,  H01L29/792 ,  H01L29/76 ,  H01L21/336

CPC分类号： H01L21/823481 ,  H01L21/76224 ,  H01L21/823462

摘要： In a semiconductor device including a plurality of element regions and an element isolation region based on STI (shallow trench isolation) which electrically isolates the element regions from each other, each of the element regions includes; a channel region; source/drain regions formed to sandwich the channel region in a horizontal direction; a gate insulation film which is formed on the channel region and in which an angle of a bird's beak is 1 degree or smaller, the bird's beak being formed from a side of the element isolation region on a surface opposite a surface facing the channel region in a horizontal direction substantially perpendicular to the direction in which the source/drain region sandwich the channel region; and a gate electrode layer formed on the gate insulation film.

摘要翻译： 在包括多个元件区域的半导体器件和基于将元件区域彼此电隔离的STI（浅沟槽隔离）的元件隔离区域中，每个元件区域包括： 一个通道区域 形成为在水平方向夹着沟道区的源/漏区; 形成在通道区域上并且鸟嘴的角度为1度或更小的栅极绝缘膜，所述鸟喙从元件隔离区的与面向沟道区域的表面相对的表面形成， 大致垂直于源极/漏极区域夹着沟道区域的方向的水平方向; 以及形成在栅极绝缘膜上的栅极电极层。

公开(公告)号：US5147811A

公开(公告)日：1992-09-15

申请号：US666912

申请日：1991-03-11

申请人： Eiji Sakagami

发明人： Eiji Sakagami

IPC分类号： H01L21/265 ,  H01L21/336 ,  H01L27/115 ,  H01L29/08 ,  H01L29/10

CPC分类号： H01L29/66825 ,  H01L21/26586 ,  H01L29/0847 ,  H01L29/1045 ,  H01L27/115

摘要： The invention provides a novel method of manufacturing a semiconductor device comprising those sequential steps including the following, formation of a floating gate electrode on a region predetermined for the formation of the first conductive channel across an insulation film, followed by superimposition of a control gate electrode on the floating gate electrode across another insulation film. After completing the formation of the stacked gate electrode unit, the first conductive impurities are injected into silicon substrate by applying a minimum of 8 degrees of angle against the normal of this substrate under aid of ionic injection, and then forms a region containing strong density of the first conductive impurities adjacent to the boundary of a layer of diffused second conductive impurities which is at least predetermined to become the drain region of the transistor incorporating the stacked gate electrode unit. As a result of the provision of the region containing strong density of impurities injected in the oblique direction, the efficiency in the writing of data into the floating gate electrode is significantly promoted, and at the same time occurrence of "short-channel" effect can securely be suppressed as well.

公开(公告)号：US20110114052A1

公开(公告)日：2011-05-19

申请号：US12940509

申请日：2010-11-05

申请人： Eiji Sakagami

发明人： Eiji Sakagami

IPC分类号： F02M35/104

CPC分类号： F02M35/10065 ,  F02B27/0215 ,  F02B27/0263 ,  F02B27/0284 ,  F02D9/16 ,  F02M35/10039 ,  Y02T10/14 ,  Y02T10/146

摘要： An air intake apparatus for an internal combustion engine includes a casing including an intake port and a discharge port, a rotary valve rotatable around a rotational axis within the casing and including a valve element that controls a connecting state between the intake port and the discharge port, and an inner surface forming portion formed at an inner surface of the casing along the rotational axis of the rotary valve and defined from the intake port to the discharge port, a distance of the inner surface from the rotational axis being shorter than a maximum rotational radius of the valve element.

摘要翻译： 一种用于内燃机的进气装置，包括一个包括进气口和排气口的壳体，一个能够旋转的壳体内旋转轴线旋转的旋转阀，包括一个控制进气口和排气口之间的连接状态的阀元件 以及内表面形成部，其沿着所述旋转阀的旋转轴线形成在所述壳体的内表面，并且从所述进气口到所述排出口被限定，所述内表面与所述旋转轴的距离比最大旋转速度短 阀元件的半径。

公开(公告)号：US20100019305A1

公开(公告)日：2010-01-28

申请号：US12570767

申请日：2009-09-30

申请人： Eiji Sakagami ,  Makoto Nakashima

发明人： Eiji Sakagami ,  Makoto Nakashima

IPC分类号： H01L29/788

CPC分类号： H01L27/11521 ,  H01L27/115

摘要： The semiconductor device of the present invention includes a semiconductor substrate, a plurality of floating gate electrodes formed in a memory cell forming region of the semiconductor substrate, a word line electrically connecting the floating gate electrodes and a conductor portion formed on the word line so as to reduce a resistance of the word line.

摘要翻译： 本发明的半导体器件包括半导体衬底，形成在半导体衬底的存储单元形成区域中的多个浮置栅电极，将浮置栅电极电连接的字线和形成在字线上的导体部分，以便 减少字线的阻力。