公开(公告)号：US20100239782A1

公开(公告)日：2010-09-23

申请号：US12792226

申请日：2010-06-02

申请人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

发明人： Atsushi SASAKI ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

IPC分类号： C23C16/513

CPC分类号： H01J37/32192 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/3244

摘要： An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

摘要翻译： 绝缘膜由等离子体膜形成装置形成，该等离子体膜形成装置包括具有电磁波入射面F的真空容器，在该真空容器中形成的第一气体注入孔以及在远离电磁波的真空容器中制造的第二气体注入孔 入射面F比第一个气体注入孔。 例如，从距离电磁波入射面F的距离小于10mm的位置引入第一气体到真空容器中。 从与电磁波入射面的距离为10mm以上的位置向真空容器引入包含有机硅化合物的第二气体。

公开(公告)号：US20080099447A1

公开(公告)日：2008-05-01

申请号：US11544051

申请日：2006-10-06

申请人： Makoto Ando ,  Takuichi Hirano ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Masashi Goto ,  Atsushi Sasaki ,  Tetsuya Ide ,  Tetsuya Okamoto

发明人： Makoto Ando ,  Takuichi Hirano ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Masashi Goto ,  Atsushi Sasaki ,  Tetsuya Ide ,  Tetsuya Okamoto

IPC分类号： B23K9/00

CPC分类号： H05H1/46 ,  H01J37/32192 ,  H01J37/32229

摘要： A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide, a height of the electromagnetic wave radiation waveguide and an electromagnetic wave radiation waveguide cycle p are set to satisfy a relationship of λ0>p>a2>b2 and p=(λg1/2)+±α (where α is 5% or below of λg1), where λ0 is a free space wavelength of an electromagnetic wave, al is a width of the electromagnetic wave distribution waveguide, εr1 is a specific inductive capacity of a dielectric material in the electromagnetic wave distribution waveguide, and λg1 is a wavelength of the electromagnetic wave output from the electromagnetic wave source in the electromagnetic wave distribution waveguide.

摘要翻译： 多个电磁波辐射波导形成为从电磁波分布波导分支。 向每个电磁波辐射波导提供多个槽。 电磁波辐射波导的宽度，电磁波辐射波导的高度和电磁波辐射波导周期p被设定为满足λ<2> / SUB >> b 2和p =（λ1g1 / 2）+±α（其中α为λ1的5％或更低） ），其中λ<0>是电磁波的自由空间波长，a1是电磁波分布波导的宽度，ε是电介质的介电常数 电磁波分布波导中的材料，λ1g1是从电磁波分布波导中的电磁波源输出的电磁波的波长。

公开(公告)号：US08136479B2

公开(公告)日：2012-03-20

申请号：US11081528

申请日：2005-03-17

申请人： Hideo Sugai ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Hideo Sugai ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： C23C16/511 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： H01J37/32192

摘要： A plasma treatment apparatus generates a plasma in a treatment vessel by an electromagnetic wave radiated from an electromagnetic wave radiation portion into the treatment vessel to perform plasma treatment by the plasma. At least a part of a wall constituting the treatment vessel includes at least a part of an electromagnetic wave transmission path which transmits the electromagnetic wave.

摘要翻译： 等离子体处理装置通过从电磁波辐射部分辐射到处理容器中的电磁波在处理容器中产生等离子体，以通过等离子体进行等离子体处理。 构成处理容器的壁的至少一部分包括透过电磁波的电磁波传输路径的至少一部分。

公开(公告)号：US20050205016A1

公开(公告)日：2005-09-22

申请号：US11081528

申请日：2005-03-17

申请人： Hideo Sugai ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Hideo Sugai ,  Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： C23C16/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H05H1/46

CPC分类号： H01J37/32192

摘要： A plasma treatment apparatus generates a plasma in a treatment vessel by an electromagnetic wave radiated from an electromagnetic wave radiation portion into the treatment vessel to perform plasma treatment by the plasma. At least a part of a wall constituting the treatment vessel includes at least a part of an electromagnetic wave transmission path which transmits the electromagnetic wave.

摘要翻译： 等离子体处理装置通过从电磁波辐射部分辐射到处理容器中的电磁波在处理容器中产生等离子体，以通过等离子体进行等离子体处理。 构成处理容器的壁的至少一部分包括透过电磁波的电磁波传输路径的至少一部分。

公开(公告)号：US20050205015A1

公开(公告)日：2005-09-22

申请号：US11081035

申请日：2005-03-16

申请人： Atsushi Sasaki ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

发明人： Atsushi Sasaki ,  Kazufumi Azuma ,  Tetsuya Ide ,  Yukihiko Nakata

IPC分类号： C23C16/455 ,  C23C16/511 ,  C23F1/00 ,  G02F1/136 ,  H01J37/32 ,  H01L21/02 ,  H01L21/31

CPC分类号： H01J37/32192 ,  C23C16/45565 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/511 ,  H01J37/3244

摘要： An insulating film is formed with a plasma film forming apparatus which includes a vacuum vessel with an electromagnetic wave incident face F, first gas injection holes made in the vacuum vessel, and second gas injection holes made in the vacuum vessel farther away from the electromagnetic wave incident face F than the first gas injection holes. For example, a first gas is introduced from a position whose distance from the electromagnetic wave incident face F is less than 10 mm into the vacuum vessel. A second gas including an organic silicon compound is introduced from a position whose distance from the electromagnetic wave incident face is 10 mm or more into the vacuum vessel.

摘要翻译： 绝缘膜由等离子体膜形成装置形成，该等离子体膜形成装置包括具有电磁波入射面F的真空容器，在该真空容器中形成的第一气体注入孔以及在远离电磁波的真空容器中制造的第二气体注入孔 入射面F比第一个气体注入孔。 例如，从距离电磁波入射面F的距离小于10mm的位置引入第一气体到真空容器中。 从与电磁波入射面的距离为10mm以上的位置向真空容器引入包含有机硅化合物的第二气体。

公开(公告)号：US20060090704A1

公开(公告)日：2006-05-04

申请号：US11259190

申请日：2005-10-27

申请人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： C23C16/00

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

摘要翻译： 在等离子体处理装置中，电磁波通过波导管的电介质窗从波导槽从辐射到处理室中，从而产生等离子体。 作为处理对象的基板由所生成的等离子体进行处理。 电介质板连接到与处理室相对的梁的那些表面。 每个电介质板的厚度被设定为电磁波的介电质内波长的1/2以上。 使用等离子体处理装置可以均匀地进行大面积的处理。

公开(公告)号：US07728251B2

公开(公告)日：2010-06-01

申请号：US11259190

申请日：2005-10-27

申请人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Tetsuya Ide ,  Atsushi Sasaki ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： B23K10/00

CPC分类号： H01J37/32238 ,  H01J37/32192

摘要： In a plasma processing apparatus, electromagnetic waves are radiated from slots of waveguides into a processing chamber via dielectric windows that are supported on beams, thereby generating a plasma. A substrate, which is an object of processing, is processed by the generated plasma. Dielectric plates are attached to those surfaces of the beams, which are opposed to the processing chamber. The thickness of each dielectric plate is set at ½ or more of the intra-dielectric wavelength of the electromagnetic waves. Using the plasma processing apparatus, a large-area processing can uniformly be performed.

摘要翻译： 在等离子体处理装置中，电磁波通过波导管的电介质窗从波导槽从辐射到处理室中，从而产生等离子体。 作为处理对象的基板由所生成的等离子体进行处理。 电介质板连接到与处理室相对的梁的那些表面。 每个电介质板的厚度被设定为电磁波的介电质内波长的1/2以上。 使用等离子体处理装置可以均匀地进行大面积的处理。

公开(公告)号：US20070105402A1

公开(公告)日：2007-05-10

申请号：US11619508

申请日：2007-01-03

申请人： Masashi Goto ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Masashi Goto ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： H01L21/00

CPC分类号： H01L29/78696 ,  C23C16/401 ,  G02F1/1368 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645

摘要： Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr

摘要翻译： 公开了一种成膜方法，包括向等离子体处理室供给包括硅化合物气体，氧化气体和稀有气体的至少三种气体，稀土气体（Pr）基分压的百分比 总压不小于85％，即85％

公开(公告)号：US07446060B2

公开(公告)日：2008-11-04

申请号：US11619508

申请日：2007-01-03

申请人： Masashi Goto ,  Kazufumi Azuma ,  Yukihiko Nakata

发明人： Masashi Goto ,  Kazufumi Azuma ,  Yukihiko Nakata

IPC分类号： H01L21/31

CPC分类号： H01L29/78696 ,  C23C16/401 ,  G02F1/1368 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02189 ,  H01L21/02274 ,  H01L21/31608 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645

摘要： Disclosed is a film-forming method, comprising supplying into a plasma processing chamber at least three kinds of gases including a silicon compound gas, an oxidizing gas, and a rare gas, the percentage of the partial pressure of the rare gas (Pr) based on the total pressure being not smaller than 85%, i.e., 85%≦Pr

摘要翻译： 公开了一种成膜方法，包括向等离子体处理室供给包括硅化合物气体，氧化气体和稀有气体的至少三种气体，稀土气体（Pr）基分压的百分比 总压不小于85％，即85％

公开(公告)号：US07311796B2

公开(公告)日：2007-12-25

申请号：US10681615

申请日：2003-10-08

申请人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

发明人： Masashi Goto ,  Yukihiko Nakata ,  Kazufumi Azuma ,  Tetsuya Okamoto

IPC分类号： H01L21/306 ,  C23C16/00 ,  C23C14/34

CPC分类号： H01J37/32192 ,  C23C16/511

摘要： A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

摘要翻译： 等离子体处理装置包括：具有至少一个开口并用于产生等离子体的室12; 设置成气密地覆盖开口的电介质部件14; 至少一个波导16，其设置在所述室的外部，使得所述一端侧与所述电介质构件相对; 设置在波导管的另一端侧的电磁波源20; 设置在与波导的电介质构件相对的表面上的多个孔38,40,42,44,46; 以及设置在至少一个所述孔中的孔区域调节装置18，以调节孔的开口面积。