公开(公告)号：US5727009A

公开(公告)日：1998-03-10

申请号：US811457

申请日：1997-03-03

申请人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi ,  Akira Ibaraki ,  Tatsuhiko Niina

发明人： Atsushi Tajiri ,  Kazushi Mori ,  Keiichi Yodoshi ,  Takao Yamaguchi ,  Akira Ibaraki ,  Tatsuhiko Niina

IPC分类号： G11B7/09 ,  G11B7/12 ,  G11B7/13 ,  G11B7/135 ,  G11B7/1353 ,  G11B7/22 ,  H01S3/00 ,  H01S5/00 ,  H01S5/022 ,  H01S5/30 ,  H01S3/19

CPC分类号： G11B7/22 ,  G11B7/123 ,  G11B7/1353 ,  G11B7/1362 ,  H01L2224/48091 ,  H01S5/005 ,  H01S5/02216 ,  H01S5/02248 ,  H01S5/02292

摘要： In an optical pickup apparatus, a laser beam emitted from a semiconductor laser device is reflected upward by a reflecting member, transmitted through a transmission type diffraction grating and split into at least three beams, and which beams are transmitted through a transmission type holographic optical element and condensed onto an optical recording medium by a condenser portion. A return beam reflected by the optical recording medium passes through the condenser portion and diffracted not to impinge upon the transmission type diffraction grating by the holographic optical element and directed to a photodetector portion of a light receiving device. The semiconductor laser device and the light receiving device are disposed in a mount member. The transmission type holographic optical element is supported by a supporting member three-dimensionally movably with respect to the mount member, and the supporting member or/and the holographic optical element is/are fixed with adhesive material with the transmission type holographic optical element being positioned with respect to the mount member.

摘要翻译： 在光学拾取装置中，从半导体激光装置发射的激光束被反射部件向上反射，通过透射型衍射光栅透射并分裂成至少三束光束，并且哪些光束通过透射型全息光学元件 并通过冷凝器部分冷凝到光学记录介质上。 由光记录介质反射的返回光束通过冷凝器部分，并通过全息光学元件衍射而不被撞击在透射型衍射光栅上并被引导到光接收装置的光电检测器部分。 半导体激光装置和光接收装置设置在安装构件中。 透射型全息光学元件由相对于安装构件三维地移动的支撑构件支撑，并且支撑构件或/和全息光学元件被固定有粘合材料，透射型全息光学元件被定位 相对于安装构件。

公开(公告)号：US4607369A

公开(公告)日：1986-08-19

申请号：US480460

申请日：1983-03-30

申请人： Tatsuhiko Niina ,  Keiichi Yodoshi

发明人： Tatsuhiko Niina ,  Keiichi Yodoshi

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/323 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01L33/0062 ,  H01L33/26 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/2211 ,  H01S5/223 ,  H01S5/2234 ,  H01S5/32308

摘要： A semiconductor laser includes an oscillation layer comprising a first clad layer, an active layer and a second clad layer which are comprised of gallium aluminum arsenide and deposited, in this order, on a semiconductor substrate. A buried cap layer in a stripe geometry for narrowing a width of a current path is deposited on a second clad layer. A burying layer comprised of II-VI compound such as zinc selenide, zinc sulfide and the like is formed on the second clad layer other than the portion on which the cap layer is formed, so that the cap layer is buried. The buried layer is formed utilizing a low temperature deposition such as a molecular beam epitaxy.

摘要翻译： 半导体激光器包括振荡层，该振荡层包括由镓砷化铝构成的第一覆盖层，有源层和第二覆盖层，并依次沉积在半导体衬底上。 用于使电流路径的宽度变窄的条形几何形状的掩埋盖层沉积在第二覆盖层上。 在除了形成有盖层的部分之外的第二包层上形成由诸如硒化锌，硫化锌等的II-VI化合物构成的掩埋层，从而掩盖覆盖层。 掩埋层是利用诸如分子束外延的低温沉积形成的。

公开(公告)号：US5187547A

公开(公告)日：1993-02-16

申请号：US616768

申请日：1990-11-19

申请人： Tatsuhiko Niina ,  Kiyoshi Ohta ,  Toshitake Nakata ,  Yasuhiko Matsushita ,  Takahiro Uetani ,  Yoshiharu Fujikawa

发明人： Tatsuhiko Niina ,  Kiyoshi Ohta ,  Toshitake Nakata ,  Yasuhiko Matsushita ,  Takahiro Uetani ,  Yoshiharu Fujikawa

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/34 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L33/44 ,  H01L33/0054 ,  H01L33/20 ,  H01L33/343 ,  H01L33/40 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12041

摘要： A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3.degree. from a {0001} plane, an n type silicon carbide layer grown on the first major surface, a p type silicon carbide layer grown on the n type silicon carbide layer, a p type ohmic electrode formed on a partial area of the p type silicon carbide layer, and an n type ohmic electrode formed on a partial area of the second major surface. The diode element has a substantially trapezoidal form in a cross section orthogonal to the first major surface. The diode element has the side of the p type silicon carbide layer broader than the side of the second major surface and is supported at the side of the type silicon carbide layer fixed to a supporting stem.

摘要翻译： 一种发光二极管器件包括n型碳化硅衬底，其具有彼此相对的第一和第二主表面，至少从{0001}面倾斜到不小于3°的预定角度，n型碳化硅层在 在n型碳化硅层上生长的第一主表面，ap型碳化硅层，形成在p型碳化硅层的局部区域上的p型欧姆电极，以及形成在第二主要部分区域上的n型欧姆电极 表面。 二极管元件在与第一主表面正交的横截面中具有基本上梯形的形式。 二极管元件的p型碳化硅层的侧面比第二主表面的侧面宽，并且被支撑在固定在支撑杆上的碳化硅层的侧面。