公开(公告)号：US5187547A

公开(公告)日：1993-02-16

申请号：US616768

申请日：1990-11-19

申请人： Tatsuhiko Niina ,  Kiyoshi Ohta ,  Toshitake Nakata ,  Yasuhiko Matsushita ,  Takahiro Uetani ,  Yoshiharu Fujikawa

发明人： Tatsuhiko Niina ,  Kiyoshi Ohta ,  Toshitake Nakata ,  Yasuhiko Matsushita ,  Takahiro Uetani ,  Yoshiharu Fujikawa

IPC分类号： H01L33/00 ,  H01L33/20 ,  H01L33/34 ,  H01L33/40 ,  H01L33/44

CPC分类号： H01L33/44 ,  H01L33/0054 ,  H01L33/20 ,  H01L33/343 ,  H01L33/40 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/12041

摘要： A light emitting diode device comprises an n type silicon carbide substrate having first and second major surfaces opposite to each other at least inclined at a predetermined angle not less than 3.degree. from a {0001} plane, an n type silicon carbide layer grown on the first major surface, a p type silicon carbide layer grown on the n type silicon carbide layer, a p type ohmic electrode formed on a partial area of the p type silicon carbide layer, and an n type ohmic electrode formed on a partial area of the second major surface. The diode element has a substantially trapezoidal form in a cross section orthogonal to the first major surface. The diode element has the side of the p type silicon carbide layer broader than the side of the second major surface and is supported at the side of the type silicon carbide layer fixed to a supporting stem.

摘要翻译： 一种发光二极管器件包括n型碳化硅衬底，其具有彼此相对的第一和第二主表面，至少从{0001}面倾斜到不小于3°的预定角度，n型碳化硅层在 在n型碳化硅层上生长的第一主表面，ap型碳化硅层，形成在p型碳化硅层的局部区域上的p型欧姆电极，以及形成在第二主要部分区域上的n型欧姆电极 表面。 二极管元件在与第一主表面正交的横截面中具有基本上梯形的形式。 二极管元件的p型碳化硅层的侧面比第二主表面的侧面宽，并且被支撑在固定在支撑杆上的碳化硅层的侧面。

公开(公告)号：US5963572A

公开(公告)日：1999-10-05

申请号：US773346

申请日：1996-12-26

申请人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

发明人： Ryoji Hiroyama ,  Takahiro Uetani ,  Kiyoshi Oota ,  Koji Komeda ,  Masayuki Shono ,  Akira Ibaraki ,  Keiichi Yodoshi

IPC分类号： H01S5/22 ,  H01S5/223 ,  H01S3/19

CPC分类号： H01S5/2231 ,  H01S5/2206 ,  H01S5/222

摘要： A semiconductor laser device including an n-type cladding layer, an active layer, a p-type cladding layer having a ridge portion, an n-type optical confinement layer formed on the flat portion and side surfaces of the ridge portion of the p-type cladding layer, and an n-type current blocking layer formed on the n-type optical confinement layer in this order. The optical confinement layer is composed of a low resistivity layer doped with n-type impurity, which has a smaller refractive index than the p-type cladding layer and a bandgap energy greater than the energy of lasing light. The optical confinement layer has an impurity concentration of 5.times.10.sup.7 cm.sup.-3 or less. The n-type current blocking layer has a thickness of 0.4 .mu.m or less.

摘要翻译： 一种半导体激光装置，包括n型包层，有源层，具有脊部的p型包覆层，形成在平坦部分上的n型光限制层和p型包层， 型包层，以及n型光限制层上形成的n型电流阻挡层。 光限制层由掺杂有n型杂质的低电阻率层构成，其折射率比p型覆层更小，并且带隙能量大于激光的能量。 光学限制层的杂质浓度为5×10 7 cm -3以下。 n型电流阻挡层的厚度为0.4μm以下。

公开(公告)号：US5555271A

公开(公告)日：1996-09-10

申请号：US363619

申请日：1994-12-23

申请人： Shoji Honda ,  Masayuki Shono ,  Ryoji Hiroyama ,  Yasuyuki Bessho ,  Hiroyuki Kase ,  Toyozo Nishida ,  Takahiro Uetani ,  Junko Suzuki

发明人： Shoji Honda ,  Masayuki Shono ,  Ryoji Hiroyama ,  Yasuyuki Bessho ,  Hiroyuki Kase ,  Toyozo Nishida ,  Takahiro Uetani ,  Junko Suzuki

IPC分类号： H01S5/00 ,  H01S5/20 ,  H01S5/223 ,  H01S5/32 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34326 ,  H01S5/2004 ,  H01S5/2231 ,  H01S5/3202 ,  H01S5/3213 ,  H01S5/3218

摘要： On an n-type GaAs semiconductor substrate, an n-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate, an active layer and a p-type cladding layer formed of AlGaInP system crystal almost in lattice matching with the semiconductor substrate are formed, and a p-type barrier cladding layer formed of AlGaInP system crystal or AlInP system crystal is provided in the p-type cladding layer. The p-type barrier cladding layer has a thickness through which electrons are almost not transmitted, has tensile strain, and also has band gap energy larger than that of the p-type cladding layer.

摘要翻译： 在n型GaAs半导体衬底上，与半导体衬底几乎晶格匹配的AlGaInP系晶体形成的n型覆层，与AlGaInP系晶体形成的几乎与晶格匹配的p型覆层， 形成由AlGaInP系晶体或AlInP系晶体构成的p型势垒覆层，p型覆层。 p型势垒覆层具有电子几乎不透射的厚度，具有拉伸应变，并且还具有比p型覆层更大的带隙能量。