摘要:
An electronic device, comprising: an execution unit which executes a predetermined function; a first control unit that has an input terminal and causes the execution unit to execute the predetermined function; a power source unit that supplies power at least to the first control unit; and a second control unit that has an output terminal connected to the input terminal of the first control unit via a signal line, operates to output a signal to the first control unit via the signal line, and causes the power source unit to cut off power supply to the first control unit, and wherein the second control unit keeps a potential of the signal line at a reference level lower than or equal to a predetermined threshold while the second control unit causes the power source unit to cut off power supply to the first control unit.
摘要:
A controller is formed as one chip, and controls a voltage regulator that supplies a power supply voltage to a CPU. The controller includes: an input unit for receiving a monitor voltage for monitoring the power supply voltage applied to the CPU; a control unit for detecting that the power supply voltage is decreased to a target voltage by the monitor voltage with the voltage regulator being in OFF state in a discharge mode; and an output unit for outputting a result signal indicating to make transition to a normal mode, when the power supply voltage has reached the target voltage. The control unit includes a calculation circuit, which is operated in accordance with a program. The calculation circuit is provided between the input unit and the output unit.
摘要:
A composite oxide with a high oxygen storage capacity is provided without using cerium. The composite oxide is an iron oxide-zirconia composite oxide containing iron, zirconium, and a rare-earth element. The total content of Fe2O3, ZrO2, and an oxide of the rare-earth element is not less than 90 mass %, the content of an iron oxide in terms of Fe2O3 is 10 to 90 mass %, and the absolute value of the covariance COV(Fe, Zr+X) of the composite oxide, which has been baked in the atmosphere at a temperature of greater than or equal to 900° C. for 5 hours or more, is not greater than 20.
摘要:
There are included a communication part performing communication with other device; a command managing part transmitting a command of an own device to other device and receiving a command of other device to acquire the command of other device by the communication part, and managing the command of the own device and the command of other device; and a command processing part executing processing of a function corresponding to the command of the own device by the own device when a command selected from the commands managed by the command managing part is the command of the own device, and executing processing of a function corresponding to the command of other device by the other device when the command selected is the command of the other device.
摘要:
A management apparatus for managing a content display change time on a display apparatus and content information to be transmitted to a terminal determines the content information to be transmitted to the terminal on the basis of a reception time of a content information request command transmitted from the terminal and the content display change time on the display apparatus.
摘要:
A thin film transistor includes: a substrate; and, on the substrate, an oxide semiconductor film which serves as an active layer and contains In, Ga, and Zn, a gate electrode, a gate insulating film, a source electrode, and a drain electrode, wherein, when a molar ratio of In, Ga, and Zn in the oxide semiconductor film is expressed as In:Ga:Zn=(2.0−x):x:y, wherein 0.0
摘要:
A developing member is disclosed which can lessen the occurring of banding. The developing member has a shaft member, an elastic layer provided on the shaft member, and a resin layer provided on the surface, wherein the resin layer contains a urethane resin and a non-reactive silicone compound, and the non-reactive silicone compound has a polyether moiety whose total number of carbon atoms ranges from 3 to 9.
摘要:
Included are a nano-carbon material production unit for producing a nano-carbon material using a fluidized catalyst formed by granulating a carrier supporting an active component, an acid treatment unit for dissolving and separating a catalyst by an acid solution by feeding a catalyst-containing nano-carbon material into the acid solution, and a pH adjustment unit, which is an anti-agglomeration treatment unit, provided on a downstream side of the acid treatment unit, for performing an anti-agglomeration treatment to prevent agglomeration among nano-carbons due to repulsion caused by dissociation among oxygen-containing functional groups added to the nano-carbon material.
摘要:
A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
摘要:
The present invention provides a wrinkle-removing composition capable of removing wrinkles in fiber products without deteriorating the texture, even if heat treatment such as ironing and steam pressing is not carried out. The present relates to a wrinkle-removing composition containing an alkylene oxide adduct (a) represented by a specific general formula (1) or a general formula (2) or (3), as well as a method of removing wrinkles in fiber products, which includes applying the wrinkle-removing composition onto fiber products.