公开(公告)号：US10032979B2

公开(公告)日：2018-07-24

申请号：US15816160

申请日：2017-11-17

申请人： Avalanche Technology, Inc.

发明人： Huadong Gan ,  Yiming Huai ,  Yuchen Zhou ,  Zihui Wang ,  Bing K. Yen ,  Xiaojie Hao ,  Pengfa Xu

IPC分类号： H01L43/08 ,  H01F10/32 ,  G11C11/16 ,  H01F41/30 ,  H01L29/66 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  B82Y40/00

摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.

公开(公告)号：US20180076384A1

公开(公告)日：2018-03-15

申请号：US15816160

申请日：2017-11-17

申请人： Avalanche Technology, Inc.

发明人： Huadong Gan ,  Yiming Huai ,  Yuchen Zhou ,  Zihui Wang ,  Bing K. Yen ,  Xiaojie Hao ,  Pengfa Xu

IPC分类号： H01L43/08 ,  H01L43/10 ,  H01L43/02 ,  H01L29/66 ,  H01L27/22 ,  H01F41/30 ,  H01F10/32 ,  G11C11/16 ,  B82Y40/00

CPC分类号： H01L43/08 ,  B82Y40/00 ,  G11C11/16 ,  G11C11/161 ,  H01F10/3286 ,  H01F10/329 ,  H01F41/302 ,  H01L27/228 ,  H01L29/66984 ,  H01L43/02 ,  H01L43/10

摘要： The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.