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    Method for Manufacturing Magnetic Memory Cells
    2.
    发明申请
    Method for Manufacturing Magnetic Memory Cells 审中-公开

    公开(公告)号：US20180366642A1

    公开(公告)日：2018-12-20

    申请号：US16112173

    申请日：2018-08-24

    Applicant: Avalanche Technology, Inc.

    Inventor： Hongxin Yang ,  Dong Ha Jung ,  Jing Zhang ,  Bing K. Yen

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08

    Abstract: The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector. The method includes the steps of depositing a selector film stack on a substrate; depositing a magnetic memory element film stack on top of the selector film stack; etching the magnetic memory element film stack with an etch mask formed thereon to remove at least an insulating tunnel junction layer in the magnetic memory element film stack not covered by the etch mask, thereby forming a magnetic memory element pillar; depositing a first conforming dielectric layer over the magnetic memory element pillar, including a sidewall thereof, and surrounding surface; etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the insulating tunnel junction layer of the magnetic memory element pillar; and etching the selector film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.

    Magnetic memory element with iridium anti-ferromagnetic coupling layer
    3.
    发明授权
    Magnetic memory element with iridium anti-ferromagnetic coupling layer 有权

    公开(公告)号：US10032979B2

    公开(公告)日：2018-07-24

    申请号：US15816160

    申请日：2017-11-17

    Applicant: Avalanche Technology, Inc.

    Inventor： Huadong Gan ,  Yiming Huai ,  Yuchen Zhou ,  Zihui Wang ,  Bing K. Yen ,  Xiaojie Hao ,  Pengfa Xu

    IPC: H01L43/08 ,  H01F10/32 ,  G11C11/16 ,  H01F41/30 ,  H01L29/66 ,  H01L43/10 ,  H01L27/22 ,  H01L43/02 ,  B82Y40/00

    Abstract: The present invention is directed to a magnetic memory element including a magnetic free layer structure having a variable magnetization direction perpendicular to a layer plane thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a first magnetic reference layer comprising cobalt, iron, and boron formed adjacent to the insulating tunnel junction layer; a second magnetic reference layer comprising cobalt separated from the first magnetic reference layer by a molybdenum layer; an iridium layer formed adjacent to the second magnetic reference layer; and a magnetic fixed layer structure formed adjacent to the iridium layer. The magnetic free layer structure includes a first and a second magnetic free layers with a perpendicular enhancement layer interposed therebetween. The first and second magnetic reference layers have a first invariable magnetization direction perpendicular to layer planes thereof. The magnetic fixed layer structure has a second invariable magnetization direction opposite to the first invariable magnetization direction.

    Magnetic random access memory with nickel/transition metal multilayered seed structure
    5.
    发明授权
    Magnetic random access memory with nickel/transition metal multilayered seed structure 有权
    具有镍/过渡金属多层种子结构的磁性随机存取存储器

    公开(公告)号：US09444038B2

    公开(公告)日：2016-09-13

    申请号：US14727642

    申请日：2015-06-01

    Applicant: Avalanche Technology, Inc.

    Inventor： Yiming Huai ,  Huadong Gan ,  Bing K. Yen ,  Roger K. Malmhall ,  Yuchen Zhou

    IPC: H01L29/82 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01L27/22

    CPC classification number: H01L27/226 ,  G11C11/161 ,  H01L27/228 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

    Abstract: The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers.

    Abstract translation: 本发明涉及一种磁性随机存取存储元件，其包括通过交织第一类型子层和第二类型子层而形成的多层种子结构，以形成单元双层结构的一个或多个重复和形成在单元双层结构之上的第一磁性层 多层种子结构。 单元双层结构由第一和第二类型子层制成，其中第一和第二类型子层中的至少一个包括一个或多个铁磁元件。 多层种子结构可以是无定形的或非磁性的或两者。 单元双层结构可以由CoFeB和Ta子层制成。

    Magnetic memory cell including two-terminal selector device
    6.
    发明授权
    Magnetic memory cell including two-terminal selector device 有权

    公开(公告)号：US10593727B2

    公开(公告)日：2020-03-17

    申请号：US15863825

    申请日：2018-01-05

    Applicant: Avalanche Technology, Inc.

    Inventor： Hongxin Yang ,  Bing K. Yen ,  Jing Zhang

    IPC: H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L45/00 ,  G11C11/16 ,  G11C16/10

    Abstract: The present invention is directed to a memory cell that includes a magnetic tunnel junction (MTJ) memory element and a two-terminal selector element coupled in series. The MTJ memory element includes a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween. The magnetic reference layer structure includes one or more magnetic reference layers having a first invariable magnetization direction substantially perpendicular to layer planes thereof. The two-terminal selector element includes a first inert electrode and a second inert electrode with a volatile switching layer interposed therebetween; a first active electrode formed adjacent to the first inert electrode; and a second active electrode formed adjacent to the second inert electrode. The volatile switching layer includes a plurality of metal-rich particles or clusters embedded in a matrix or at least one conductor layer interleaved with insulating layers.

    Magnetic Memory Array Incorporating Selectors and Method for Manufacturing the Same
    7.
    发明申请
    Magnetic Memory Array Incorporating Selectors and Method for Manufacturing the Same 审中-公开

    公开(公告)号：US20200006422A1

    公开(公告)日：2020-01-02

    申请号：US16024601

    申请日：2018-06-29

    Applicant: Avalanche Technology, Inc.

    Inventor： Hongxin Yang ,  Bing K. Yen

    IPC: H01L27/22 ,  H01L43/02 ,  H01L43/12

    Abstract: The present invention is directed to a memory cell array comprising an array of magnetic memory elements arranged in rows and columns; a plurality of electrodes, each of which is formed adjacent to a respective one of the array of magnetic memory elements; a plurality of first conductive lines, each of which is connected to a respective row of the array of magnetic memory elements along a row direction; and a plurality of composite lines. Each composite line includes a volatile switching layer connected to a respective column of the plurality of electrodes along a column direction; an electrode layer formed adjacent to the volatile switching layer; and a second conductive line formed adjacent to the electrode layer. The dimension of the volatile switching layer may be substantially larger than the size of the magnetic memory element along the row direction.

    Method for manufacturing magnetic memory cells
    8.
    发明授权
    Method for manufacturing magnetic memory cells 有权

    公开(公告)号：US10177308B2

    公开(公告)日：2019-01-08

    申请号：US15618510

    申请日：2017-06-09

    Applicant: Avalanche Technology, Inc.

    Inventor： Hongxin Yang ,  Dong Ha Jung ,  Jing Zhang ,  Bing K. Yen

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    Abstract: The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector. The method includes the steps of depositing a magnetic memory element film stack on a substrate; depositing a selector film stack on top of the magnetic memory element film stack; etching the selector film stack with an etch mask formed thereon to remove at least a switching layer in the selector film stack not covered by the etch mask, thereby forming a selector pillar; depositing a first conforming dielectric layer over the selector pillar and surrounding surface; etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the switching layer of the selector pillar; and etching the magnetic memory element film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.

    Method for Manufacturing Magnetic Memory Cells
    9.
    发明申请
    Method for Manufacturing Magnetic Memory Cells 审中-公开

    公开(公告)号：US20180358547A1

    公开(公告)日：2018-12-13

    申请号：US15618510

    申请日：2017-06-09

    Applicant: Avalanche Technology, Inc.

    Inventor： Hongxin Yang ,  Dong Ha Jung ,  Jing Zhang ,  Bing K. Yen

    IPC: H01L43/12 ,  H01L43/08 ,  H01L27/22 ,  G11C11/16

    CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08

    Abstract: The present invention is directed to a method for manufacturing a memory cell that includes a magnetic memory element electrically connected to a two-terminal selector. The method includes the steps of depositing a magnetic memory element film stack on a substrate; depositing a selector film stack on top of the magnetic memory element film stack; etching the selector film stack with an etch mask formed thereon to remove at least a switching layer in the selector film stack not covered by the etch mask, thereby forming a selector pillar; depositing a first conforming dielectric layer over the selector pillar and surrounding surface; etching a portion of the first conforming dielectric layer covering the surrounding surface to form a first protective sleeve around at least the switching layer of the selector pillar; and etching the magnetic memory element film stack using the etch mask and the first protective sleeve as a composite mask to form a memory cell pillar.

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