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    Variable breakdown transient voltage suppressor
    1.
    发明授权
    Variable breakdown transient voltage suppressor 有权
    可变击穿瞬态电压抑制器

    公开(公告)号：US08730629B2

    公开(公告)日：2014-05-20

    申请号：US13334598

    申请日：2011-12-22

    申请人： Avinash Srikrishnan Kashyap ,  Stanislav Ivanovich Soloviev

    发明人： Avinash Srikrishnan Kashyap ,  Stanislav Ivanovich Soloviev

    IPC分类号： H02H3/22

    CPC分类号： H01L29/36 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618

    摘要： A semiconductor die includes a substrate comprising a first layer of a first wide band gap semiconductor material having a first conductivity, a second layer of a second wide band gap semiconductor material having a second conductivity different from the first conductivity, in electrical contact with the first layer, a third layer of a third wide band gap semiconductor material having a third conductivity different from the first conductivity and second conductivity, in electrical contact with the second layer, a fourth layer of a fourth wide band gap semiconductor material having the second conductivity, in electrical contact with the third layer, and a fifth layer of a fifth wide band gap semiconductor material having the first conductivity and in electrical contact with the fourth layer, wherein the first layer, the second layer, the third layer, the fourth layer, and the fifth layer are sequentially arranged to form a structure.

    摘要翻译： 半导体管芯包括：衬底，其包括具有第一导电性的第一宽带隙半导体材料的第一层，具有与第一导电性不同的第二导电性的第二宽带隙半导体材料的第二层与第一导电 具有与第一导电性和第二导电性不同的第三导电性的与第二层电接触的第三宽带隙半导体材料的第三层，具有第二导电性的第四宽带隙半导体材料的第四层， 与第三层电接触，以及具有第一导电性并与第四层电接触的第五宽带隙半导体材料的第五层，其中第一层，第二层，第三层，第四层， 并且顺序地布置第五层以形成结构。

    VARIABLE BREAKDOWN TRANSIENT VOLTAGE SUPPRESSOR
    2.
    发明申请
    VARIABLE BREAKDOWN TRANSIENT VOLTAGE SUPPRESSOR 有权
    可变断开瞬态电压抑制器

    公开(公告)号：US20130163139A1

    公开(公告)日：2013-06-27

    申请号：US13334598

    申请日：2011-12-22

    申请人： Avinash Srikrishnan Kashyap ,  Stanislav Ivanovich Soloviev

    发明人： Avinash Srikrishnan Kashyap ,  Stanislav Ivanovich Soloviev

    IPC分类号： H02H3/22 ,  H01L29/20 ,  H01L21/66 ,  H01L29/16

    CPC分类号： H01L29/36 ,  H01L29/1602 ,  H01L29/1608 ,  H01L29/2003 ,  H01L29/861 ,  H01L29/8618

    摘要： A semiconductor die includes a substrate comprising a first layer of a first wide band gap semiconductor material having a first conductivity, a second layer of a second wide band gap semiconductor material having a second conductivity different from the first conductivity, in electrical contact with the first layer, a third layer of a third wide band gap semiconductor material having a third conductivity different from the first conductivity and second conductivity, in electrical contact with the second layer, a fourth layer of a fourth wide band gap semiconductor material having the second conductivity, in electrical contact with the third layer, and a fifth layer of a fifth wide band gap semiconductor material having the first conductivity and in electrical contact with the fourth layer, wherein the first layer, the second layer, the third layer, the fourth layer, and the fifth layer are sequentially arranged to form a structure.

    摘要翻译： 半导体管芯包括：衬底，其包括具有第一导电性的第一宽带隙半导体材料的第一层，具有与第一导电性不同的第二导电性的第二宽带隙半导体材料的第二层与第一导电 具有与第一导电性和第二导电性不同的第三导电性的与第二层电接触的第三宽带隙半导体材料的第三层，具有第二导电性的第四宽带隙半导体材料的第四层， 与第三层电接触，以及具有第一导电性并与第四层电接触的第五宽带隙半导体材料的第五层，其中第一层，第二层，第三层，第四层， 并且顺序地布置第五层以形成结构。

    Optically triggered semiconductor device and method for making the same
    4.
    发明授权
    Optically triggered semiconductor device and method for making the same 有权
    光学触发半导体器件及其制造方法

    公开(公告)号：US08691634B2

    公开(公告)日：2014-04-08

    申请号：US13960971

    申请日：2013-08-07

    申请人： Ahmed Elasser ,  Stephen Daley Arthur ,  Alexey Vert ,  Stanislav Ivanovich Soloviev ,  Peter Almern Losee

    发明人： Ahmed Elasser ,  Stephen Daley Arthur ,  Alexey Vert ,  Stanislav Ivanovich Soloviev ,  Peter Almern Losee

    IPC分类号： H01L21/332

    CPC分类号： H01L31/1113 ,  H01L27/0817 ,  H01L29/74

    摘要： A thyristor device includes a semiconductor body and a conductive anode. The semiconductor body has a plurality of doped layers forming a plurality of dopant junctions and includes an optical thyristor, a first amplifying thyristor, and a switching thyristor. The conductive anode is disposed on a first side of the semiconductor body. The optical thyristor is configured to receive incident radiation to generate a first electric current, and the first amplifying thyristor is configured to increase the first electric current from the optical thyristor to at least a threshold current. The switching thyristor switches to the conducting state in order to conduct a second electric current from the anode and through the semiconductor body.

    摘要翻译： 晶闸管器件包括半导体本体和导电阳极。 半导体本体具有形成多个掺杂剂结的多个掺杂层，并且包括光学晶闸管，第一放大晶闸管和开关晶闸管。 导电阳极设置在半导体本体的第一侧上。 光晶闸管被配置为接收入射辐射以产生第一电流，并且第一放大晶闸管被配置为将来自光晶闸管的第一电流增加到至少阈值电流。 开关晶闸管切换到导通状态，以便从阳极和半导体本体传导第二电流。

    Semiconductor devices and systems
    6.
    发明授权
    Semiconductor devices and systems 有权
    半导体器件和系统

    公开(公告)号：US08198650B2

    公开(公告)日：2012-06-12

    申请号：US12329841

    申请日：2008-12-08

    申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    IPC分类号： H01L29/66

    CPC分类号： H01L29/861 ,  H01L29/402

    摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

    摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。

    SEMICONDUCTOR DEVICES AND SYSTEMS
    7.
    发明申请
    SEMICONDUCTOR DEVICES AND SYSTEMS 有权
    半导体器件和系统

    公开(公告)号：US20100140730A1

    公开(公告)日：2010-06-10

    申请号：US12329841

    申请日：2008-12-08

    申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

    IPC分类号： H01L31/107 ,  H01L31/02 ,  H01L29/06

    CPC分类号： H01L29/861 ,  H01L29/402

    摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

    摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。