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    Semiconductor memory device capable of driving non-selected word lines to first and second potentials
    1.
    发明申请
    Semiconductor memory device capable of driving non-selected word lines to first and second potentials 失效
    能够将未选择的字线驱动到第一和第二电位的半导体存储器件

    公开(公告)号：US20060098523A1

    公开(公告)日：2006-05-11

    申请号：US11313963

    申请日：2005-12-22

    申请人： Masato Takita ,  Masato Matsumiya ,  Satoshi Eto ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Ayako Kitamoto ,  Kuninori Kawabata ,  Hideki Kanou ,  Toru Koga ,  Yuki Ishii ,  Shinichi Yamada ,  Kaoru Mori

    发明人： Masato Takita ,  Masato Matsumiya ,  Satoshi Eto ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Ayako Kitamoto ,  Kuninori Kawabata ,  Hideki Kanou ,  Toru Koga ,  Yuki Ishii ,  Shinichi Yamada ,  Kaoru Mori

    IPC分类号： G11C8/00

    CPC分类号： G11C5/147 ,  G11C8/08 ,  G11C8/12 ,  G11C11/4074 ,  G11C11/4085 ,  G11C2207/2227

    摘要： A semiconductor device includes a word line drive circuit for resetting the word line by driving the word line connected to a memory cell and is constituted so as to switch a reset level of the word line drive circuit, which is set at the time of the reset operation of the word line, between a first potential such as a ground potential and a second potential such as a negative potential. Further, a semiconductor device including a memory cell array formed by arranging a plurality of memory cells and a word line reset level generating circuit for generating a negative potential makes it possible to vary the amount of a current supply of the word line reset level generating circuit when non-selected word lines are set to a negative potential by applying the output of the word line reset level generating circuit to the non-selected word lines, and varies the amount of the current supply of the negative potential in accordance with the operation of the memory cell array. Furthermore, in a semiconductor device including a plurality of power source circuits each having an oscillation circuit and a capacitor, for driving the capacitor by the oscillation signal outputted by the oscillation circuit, at least a part of these power source circuits shares in common the oscillation circuit, and different capacitors are driven by the oscillation signal outputted from the common oscillation circuit.

    摘要翻译： 半导体器件包括字线驱动电路，用于通过驱动连接到存储单元的字线来重置字线，并且被构造成切换在复位时设置的字线驱动电路的复位电平 在诸如地电位的第一电位和诸如负电位的第二电位之间的字线的操作。 此外，包括通过布置多个存储单元形成的存储单元阵列和用于产生负电位的字线复位电平发生电路的半导体器件使得可以改变字线复位电平产生电路的电流供应量 当通过将字线复位电平产生电路的输出施加到未被选择的字线而将未被选择的字线设置为负电位时，根据操作来改变负电位的电流供给量 存储单元阵列。 此外，在具有振荡电路和电容器的多个电源电路的半导体装置中，通过由振荡电路输出的振荡信号来驱动电容器，这些电源电路的至少一部分共享振荡 电路，不同的电容器由共同的振荡电路输出的振荡信号驱动。

    Semiconductor memory employing direct-type sense amplifiers capable of realizing high-speed access
    2.
    发明授权
    Semiconductor memory employing direct-type sense amplifiers capable of realizing high-speed access 有权
    采用直接式读出放大器的半导体存储器，能够实现高速存取

    公开(公告)号：US6147919A

    公开(公告)日：2000-11-14

    申请号：US274245

    申请日：1999-03-23

    申请人： Kuninori Kawabata ,  Masato Matsumiya ,  Satoshi Eto ,  Masato Takita ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Hideki Kanou ,  Ayako Kitamoto ,  Toru Koga ,  Yuki Ishii ,  Akira Kikutake ,  Yuichi Uzawa

    发明人： Kuninori Kawabata ,  Masato Matsumiya ,  Satoshi Eto ,  Masato Takita ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Hideki Kanou ,  Ayako Kitamoto ,  Toru Koga ,  Yuki Ishii ,  Akira Kikutake ,  Yuichi Uzawa

    IPC分类号： H01L27/10 ,  G11C7/06 ,  G11C7/12 ,  G11C7/02

    CPC分类号： G11C7/06 ,  G11C7/12

    摘要： A semiconductor memory has memory cells arranged in arrays, direct-type sense amplifiers arranged in each column of the memory cells, for writing and reading data to and from a memory cell to be accessed, column selection lines for selecting sense amplifiers that are in a column that involves the memory cell to be accessed, write-only column selection lines for selecting sense amplifiers that are in a row that involves the memory cell to be accessed if the memory cell is accessed to write data thereto, and local drivers. The sense amplifiers are grouped, in each row, into sense amplifier blocks. The write-only column selection lines consist of first selection lines for selecting sense amplifier blocks that are in the row that involves the memory cell to be accessed for data write and second selection lines for selecting sense amplifiers that are contained in the selected sense amplifier blocks. The local drivers apply a selection signal to the second selection lines according to a selection signal from the first selection lines. The write-only column selection lines are controlled by signals that are used to control the sense amplifiers.

    摘要翻译： 半导体存储器具有排列成阵列的存储单元，布置在每个存储单元列中的直接型读出放大器，用于向要被访问的存储单元写入数据和从存储单元读取数据;列选择线，用于选择读取放大器 涉及要访问的存储器单元的列，只读列选择线，用于选择存储单元被访问以涉及要访问的存储器单元的行的读出放大器以写入数据，以及本地驱动器。 读出放大器在每行中分组成读出放大器模块。 只写列选择线由用于选择读入放大器块的第一选择线组成，所述读出放大器块包括要被存取的存储单元以进行数据写入，第二选择线用于选择包含在所选择的读出放大器块中的读出放大器 。 本地驱动器根据来自第一选择线的选择信号向第二选择线施加选择信号。 只写列选择线由用于控制读出放大器的信号控制。

    Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuit
    4.
    发明授权
    Semiconductor integrated circuit and method of switching source potential of transistor in semiconductor integrated circuit 有权
    半导体集成电路中半导体集成电路和晶体管的源极电位切换方法

    公开(公告)号：US06605963B2

    公开(公告)日：2003-08-12

    申请号：US09412590

    申请日：1999-10-05

    申请人： Ayako Kitamoto ,  Masato Matsumiya ,  Satoshi Eto ,  Masato Takita ,  Toshikazu Nakamura ,  Hideki Kanou ,  Kuninori Kawabata ,  Masatomo Hasegawa ,  Toru Koga ,  Yuki Ishii

    发明人： Ayako Kitamoto ,  Masato Matsumiya ,  Satoshi Eto ,  Masato Takita ,  Toshikazu Nakamura ,  Hideki Kanou ,  Kuninori Kawabata ,  Masatomo Hasegawa ,  Toru Koga ,  Yuki Ishii

    IPC分类号： H03K19185

    CPC分类号： H03K19/0013 ,  H03K3/356113 ,  H03K17/102 ,  H03K19/00361 ,  H03K2217/0036

    摘要： A semiconductor integrated circuit, comprising a circuit unit having a predetermined function such as a level shifter circuit or a driver transistor circuit by a combination of a plurality of transistors, is disclosed. Among a plurality of the transistors of the circuit unit, the source potential of at least one transistor adapted to turn off during the standby period of the circuit unit is changed. Preferably, the semiconductor integrated circuit is configured to reduce the sub-threshold current flowing between the source and the drain of at least one transistor adapted to turn off during the standby period of the circuit unit by changing the source potential at a timing based on the standby period of the circuit unit in such a manner that a predetermined bias voltage is applied between the gate and the source of the transistor. A method of switching the source potential of at least one transistor in the semiconductor integrated circuit having the configuration described above is also disclosed.

    摘要翻译： 公开了一种半导体集成电路，其包括具有预定功能的电路单元，例如通过多个晶体管的组合的电平移位器电路或驱动晶体管电路。 在电路单元的多个晶体管中，改变了在电路单元的待机期间适于关断的至少一个晶体管的源极电位。 优选地，半导体集成电路被配置为减少在电路单元的待机时段期间流过至少一个晶体管的源极和漏极之间的亚阈值电流，其在基于 以使得在晶体管的栅极和源极之间施加预定的偏置电压的方式使电路单元的待机时段。 还公开了一种在具有上述结构的半导体集成电路中切换至少一个晶体管的源极电位的方法。

    SEMICONDUCTOR MEMORY DEVICE CAPABLE OF DRIVING NON-SELECTED WORD LINES TO FIRST AND SECOND POTENTIALS
    9.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE CAPABLE OF DRIVING NON-SELECTED WORD LINES TO FIRST AND SECOND POTENTIALS 审中-公开
    能够驱动非选定字线的第一和第二电位的半导体存储器件

    公开(公告)号：US20100321983A1

    公开(公告)日：2010-12-23

    申请号：US12718819

    申请日：2010-03-05

    申请人： Masato Takita ,  Masato Matsumiya ,  Satoshi Eto ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Ayako Kitamoto ,  Kuninori Kawabata ,  Hideki Kanou ,  Toru Koga ,  Yuki Ishii ,  Shinichi Yamada ,  Kaoru Mori

    发明人： Masato Takita ,  Masato Matsumiya ,  Satoshi Eto ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Ayako Kitamoto ,  Kuninori Kawabata ,  Hideki Kanou ,  Toru Koga ,  Yuki Ishii ,  Shinichi Yamada ,  Kaoru Mori

    IPC分类号： G11C11/24 ,  G11C5/14

    CPC分类号： G11C5/147 ,  G11C8/08 ,  G11C8/12 ,  G11C11/4074 ,  G11C11/4085 ,  G11C2207/2227

    摘要： A semiconductor device includes a word line drive circuit for resetting the word line by driving the word line connected to a memory cell and is constituted so as to switch a reset level of the word line drive circuit, which is set at the time of the reset operation of the word line, between a first potential such as a ground potential and a second potential such as a negative potential. Further, a semiconductor device including a memory cell array formed by arranging a plurality of memory cells and a word line reset level generating circuit for generating a negative potential makes it possible to vary the amount of a current supply of the word line reset level generating circuit when non-selected word lines are set to a negative potential by applying the output of the word line reset level generating circuit to the non-selected word lines, and varies the amount of the current supply of the negative potential in accordance with the operation of the memory cell array. Furthermore, in a semiconductor device including a plurality of power source circuits each having an oscillation circuit and a capacitor, for driving the capacitor by the oscillation signal outputted by the oscillation circuit, at least a part of these power source circuits shares in common the oscillation circuit, and different capacitors are driven by the oscillation signal outputted from the common oscillation circuit.

    摘要翻译： 半导体器件包括字线驱动电路，用于通过驱动连接到存储单元的字线来重置字线，并且被构造成切换在复位时设置的字线驱动电路的复位电平 在诸如地电位的第一电位和诸如负电位的第二电位之间的字线的操作。 此外，包括通过布置多个存储单元形成的存储单元阵列和用于产生负电位的字线复位电平发生电路的半导体器件使得可以改变字线复位电平产生电路的电流供应量 当通过将字线复位电平产生电路的输出施加到未被选择的字线而将未被选择的字线设置为负电位时，根据操作来改变负电位的电流供给量 存储单元阵列。 此外，在具有振荡电路和电容器的多个电源电路的半导体装置中，通过由振荡电路输出的振荡信号来驱动电容器，这些电源电路的至少一部分共享振荡 电路，不同的电容器由共同的振荡电路输出的振荡信号驱动。

    Semiconductor device
    10.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US07079443B2

    公开(公告)日：2006-07-18

    申请号：US10631752

    申请日：2003-08-01

    申请人： Masato Takita ,  Masato Matsumiya ,  Satoshi Eto ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Ayako Kitamoto ,  Kuninori Kawabata ,  Hideki Kanou ,  Toru Koga ,  Yuki Ishii ,  Shinichi Yamada ,  Kaoru Mori

    发明人： Masato Takita ,  Masato Matsumiya ,  Satoshi Eto ,  Toshikazu Nakamura ,  Masatomo Hasegawa ,  Ayako Kitamoto ,  Kuninori Kawabata ,  Hideki Kanou ,  Toru Koga ,  Yuki Ishii ,  Shinichi Yamada ,  Kaoru Mori

    IPC分类号： G11C8/08

    CPC分类号： G11C5/147 ,  G11C8/08 ,  G11C8/12 ,  G11C11/4074 ,  G11C11/4085 ,  G11C2207/2227

    摘要： A semiconductor device includes a word line drive circuit for resetting the word line by driving the word line connected to a memory cell and is constituted so as to switch a reset level of the word line drive circuit, which is set at the time of the reset operation of the word line, between a first potential such as a ground potential and a second potential such as a negative potential. Further, a semiconductor device including a memory cell array formed by arranging a plurality of memory cells and a word line reset level generating circuit for generating a negative potential makes it possible to vary the amount of a current supply of the word line reset level generating circuit when non-selected word lines are set to a negative potential by applying the output of the word line reset level generating circuit to the non-selected word lines, and varies the amount of the current supply of the negative potential in accordance with the operation of the memory cell array. Furthermore, in a semiconductor device including a plurality of power source circuits each having an oscillation circuit and a capacitor, for driving the capacitor by the oscillation signal outputted by the oscillation circuit, at least a part of these power source circuits shares in common the oscillation circuit, and different capacitors are driven by the oscillation signal outputted from the common oscillation circuit.

    摘要翻译： 半导体器件包括字线驱动电路，用于通过驱动连接到存储单元的字线来重置字线，并且被构造成切换在复位时设置的字线驱动电路的复位电平 在诸如地电位的第一电位和诸如负电位的第二电位之间的字线的操作。 此外，包括通过布置多个存储单元形成的存储单元阵列和用于产生负电位的字线复位电平发生电路的半导体器件使得可以改变字线复位电平产生电路的电流供应量 当通过将字线复位电平产生电路的输出施加到未被选择的字线而将未被选择的字线设置为负电位时，根据操作来改变负电位的电流供给量 存储单元阵列。 此外，在具有振荡电路和电容器的多个电源电路的半导体装置中，通过由振荡电路输出的振荡信号来驱动电容器，这些电源电路的至少一部分共享振荡 电路，不同的电容器由共同的振荡电路输出的振荡信号驱动。