公开(公告)号：US20100038619A1

公开(公告)日：2010-02-18

申请号：US12532666

申请日：2008-03-14

申请人： Ayuka Tada ,  Kimihiko Ito

发明人： Ayuka Tada ,  Kimihiko Ito

IPC分类号： H01L45/00 ,  H01L21/02 ,  H01C7/10

CPC分类号： H01L45/04 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/124 ,  H01L45/146 ,  H01L45/1691

摘要： A variable resistance element includes a first conductive portion; an insulating film pattern provided on the first conductive portion; a level difference with respect to the upper surface of the first conductive portion, the level difference being formed of the insulating film pattern; a variable resistance film provided on a side surface of the level difference and having contact with the upper surface of the first conductive portion on the lower-end side of the side surface of the level difference; and a second conductive portion having contact with the variable resistance film on the upper-end side of the side surface of the level difference.

摘要翻译： 可变电阻元件包括第一导电部分; 设置在所述第一导电部上的绝缘膜图案; 相对于第一导电部分的上表面的电平差，电平差由绝缘膜图案形成; 设置在所述电平差的侧面并且与所述电平差的侧面的下端侧的所述第一导电部的上表面接触的可变电阻膜; 以及与所述电平差的侧面的上端侧的所述可变电阻膜接触的第二导电部。

公开(公告)号：US08391050B2

公开(公告)日：2013-03-05

申请号：US12919459

申请日：2009-03-18

申请人： Kimihiko Ito

发明人： Kimihiko Ito

IPC分类号： G11C11/00 ,  H01L21/02 ,  H01L45/00

CPC分类号： H01L45/085 ,  H01L27/101 ,  H01L29/78 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641

摘要： To provide a resistance change element which can reduce the current required to switch the state to the high resistance state from the low resistance state. The resistance change element according to the exemplary embodiment includes three or more electrodes, none of the electrodes supplying ion to a resistance change material (205). It includes a material (206) which does not show resistance change arranged between an electrode (207) and the resistance change material (205), and current pathways formed at two electrodes (204) other than the electrode (207).

摘要翻译： 提供一种电阻变化元件，其可以将从高电阻状态切换到高电阻状态所需的电流减小。 根据示例性实施例的电阻变化元件包括三个或更多个电极，没有电极向电阻变化材料（205）提供离子。 它包括不显示布置在电极（207）和电阻变化材料（205）之间的电阻变化的材料（206）以及形成在电极（207）以外的两个电极（204）处的电流通路。

公开(公告)号：US08049204B2

公开(公告)日：2011-11-01

申请号：US12527681

申请日：2008-02-18

申请人： Kimihiko Ito

发明人： Kimihiko Ito

IPC分类号： H01L43/00

CPC分类号： H01L27/101 ,  G11C13/0007 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1658

摘要： A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a first region made of a variable resistance material whose resistivity changes by applying voltage, and a second region formed by doping a metal element to the variable resistance material such that a resistivity of the second region is higher than that of the first region and is not changed by applying a voltage used to change the resistivity of the first region. The first region is in contact with the first electrode and the second electrode, and extends from one electrode side to the other electrode side. The second region is provided outside the first region in at least part of the current path forming region in direction extending from one electrode side to the other electrode side.

摘要翻译： 半导体存储器件包括可变电阻元件，其包括第一电极，电流路径形成区域和第二电极。 电流路径形成区域包括由可变电阻材料制成的第一区域，其电阻率通过施加电压而变化;以及第二区域，其通过将金属元素掺杂到可变电阻材料形成，使得第二区域的电阻率高于 第一区域并且不通过施加用于改变第一区域的电阻率的电压而改变。 第一区域与第一电极和第二电极接触，并且从一个电极侧延伸到另一个电极侧。 在从一个电极侧延伸到另一个电极侧的方向上，在电流路径形成区域的至少一部分中，将第二区域设置在第一区域的外侧。

公开(公告)号：US20130341585A1

公开(公告)日：2013-12-26

申请号：US14004121

申请日：2011-11-15

申请人： Kimihiko Ito

发明人： Kimihiko Ito

IPC分类号： H01L45/00

CPC分类号： H01L45/145 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path.

摘要翻译： 通过夹着金属氧化物层形成可变电阻元件，金属氧化物层在一对电极之间电阻变化，并且金属氧化物层包括其电阻通过形成电流路径而变化的一对可变电阻层和夹在其间的分支抑制层 可变电阻层并抑制电流路径的分支。

公开(公告)号：US08362456B2

公开(公告)日：2013-01-29

申请号：US12595662

申请日：2008-03-21

申请人： Kimihiko Ito ,  Hiroshi Sunamura ,  Yuko Yabe

发明人： Kimihiko Ito ,  Hiroshi Sunamura ,  Yuko Yabe

IPC分类号： H01L47/00

CPC分类号： H01L27/101 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/1625

摘要： To use a resistance change element having an MIM structure, which is obtained by stacking a metal, a metal oxide, and a metal, as a switching element, it is necessary to achieve OFF resistance higher than that required in a memory element by a factor of at least 1000. On the other hand, when a resistance change element is used as a memory element and when the difference between the ON resistance and the OFF resistance is a large value, high performance, for example, a short readout time, can be achieved. The present invention therefore provides a resistance change element capable of maintaining low ON resistance and achieving high OFF resistance. High OFF resistance can be achieved while low ON resistance is maintained by adding a second metal that is not contained in a metal oxide, which is a resistance change material, the second metal being capable of charge-compensating for metal deficiency or oxygen deficiency.

摘要翻译： 为了使用通过堆叠金属，金属氧化物和金属作为开关元件获得的具有MIM结构的电阻变化元件，需要通过一个因子实现比存储元件中要求的OFF电阻高的OFF电阻 至少为1000.另一方面，当使用电阻变化元件作为存储元件时，并且当导通电阻和截止电阻之间的差值大时，高性能（例如，短的读出时间）可以 实现。 因此，本发明提供能够保持低导通电阻并实现高关断电阻的电阻变化元件。 通过添加作为电阻变化材料的金属氧化物中不含有的第二金属，能够进行电荷补偿金属缺乏或氧缺乏的第二金属，可以保持低导通电阻。

公开(公告)号：US20110007555A1

公开(公告)日：2011-01-13

申请号：US12919459

申请日：2009-03-18

申请人： Kimihiko Ito

发明人： Kimihiko Ito

IPC分类号： G11C11/00 ,  H01L21/02 ,  H01L45/00

CPC分类号： H01L45/085 ,  H01L27/101 ,  H01L29/78 ,  H01L45/08 ,  H01L45/1206 ,  H01L45/1226 ,  H01L45/1253 ,  H01L45/146 ,  H01L45/1641

摘要： To provide a resistance change element which can reduce the current required to switch the state to the high resistance state from the low resistance state.The resistance change element according to the exemplary embodiment includes three or more electrodes, none of the electrodes supplying ion to a resistance change material (205). It includes a material (206) which does not show resistance change arranged between an electrode (207) and the resistance change material (205), and current pathways formed at two electrodes (204) other than the electrode (207).

摘要翻译： 提供一种电阻变化元件，其可以将从高电阻状态切换到高电阻状态所需的电流减小。 根据示例性实施例的电阻变化元件包括三个或更多个电极，没有电极向电阻变化材料（205）提供离子。 它包括不显示布置在电极（207）和电阻变化材料（205）之间的电阻变化的材料（206）以及形成在电极（207）以外的两个电极（204）处的电流通路。

公开(公告)号：US20100078615A1

公开(公告)日：2010-04-01

申请号：US12527681

申请日：2008-02-18

申请人： Kimihiko Ito

发明人： Kimihiko Ito

IPC分类号： H01L45/00 ,  H01L21/02 ,  H01L49/00

CPC分类号： H01L27/101 ,  G11C13/0007 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/122 ,  H01L45/1226 ,  H01L45/1233 ,  H01L45/1246 ,  H01L45/146 ,  H01L45/1658

摘要： A semiconductor memory device includes a variable resistance element including a first electrode, a current path forming region, and a second electrode. The current path forming region includes a first region made of a variable resistance material whose resistivity changes by applying voltage, and a second region formed by doping a metal element to the variable resistance material such that a resistivity of the second region is higher than that of the first region and is not changed by applying a voltage used to change the resistivity of the first region. The first region is in contact with the first electrode and the second electrode, and extends from one electrode side to the other electrode side. The second region is provided outside the first region in at least part of the current path forming region in direction extending from one electrode side to the other electrode side.

摘要翻译： 半导体存储器件包括可变电阻元件，其包括第一电极，电流路径形成区域和第二电极。 电流路径形成区域包括由可变电阻材料制成的第一区域，其电阻率通过施加电压而变化;以及第二区域，其通过将金属元素掺杂到可变电阻材料而形成，使得第二区域的电阻率高于 第一区域并且不通过施加用于改变第一区域的电阻率的电压而改变。 第一区域与第一电极和第二电极接触，并且从一个电极侧延伸到另一个电极侧。 在从一个电极侧延伸到另一个电极侧的方向上，在电流路径形成区域的至少一部分中，将第二区域设置在第一区域的外侧。

公开(公告)号：US09070876B2

公开(公告)日：2015-06-30

申请号：US14004121

申请日：2011-11-15

申请人： Kimihiko Ito

发明人： Kimihiko Ito

IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

CPC分类号： H01L45/145 ,  H01L27/2436 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/146

摘要： A variable resistance element is formed by sandwiching a metal oxide layer whose resistance changes between a pair of electrodes and the metal oxide layer includes a pair of variable resistance layers whose resistances change by formation of a current path and a branching suppression layer which is sandwiched between the variable resistance layers and suppresses branching of the current path.

摘要翻译： 通过夹着金属氧化物层形成可变电阻元件，金属氧化物层在一对电极之间电阻变化，并且金属氧化物层包括其电阻通过形成电流路径而变化的一对可变电阻层和夹在其间的分支抑制层 可变电阻层并抑制电流路径的分支。

公开(公告)号：US08946668B2

公开(公告)日：2015-02-03

申请号：US13574405

申请日：2011-01-21

申请人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

发明人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

IPC分类号： H01L29/02 ,  H01L47/00 ,  H01L23/522 ,  H01L45/00

CPC分类号： H01L23/5228 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device including a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction so as to be adjacent to each other, with an interlayer insulation film being interposed on a semiconductor substrate. The resistive change element includes a lower electrode, a resistive change element film made of a metal oxide and an upper electrode. Since the upper electrode on the resistive change element film is formed as part of a plug for the second wiring, a structure in which a side surface of the upper electrode is not in direct contact with the side surface of the metal oxide or the lower electrode is provided so that it is possible to realize excellent device characteristics, even when a byproduct is adhered to the side wall of the metal oxide or the lower electrode in the etching thereof.

摘要翻译： 公开了一种半导体器件，其包括在第一布线和第二布线之间的电阻变化元件，它们在垂直方向上彼此相邻地布置，层间绝缘膜插入在半导体衬底上。 电阻变化元件包括下电极，由金属氧化物和上电极制成的电阻变化元件膜。 由于电阻变化元件膜上的上电极被形成为用于第二布线的插头的一部分，所以上电极的侧表面不与金属氧化物或下电极的侧表面直接接触的结构 即使在其蚀刻中副产物附着在金属氧化物或下电极的侧壁上时，也可以实现优异的器件特性。

公开(公告)号：US20120286231A1

公开(公告)日：2012-11-15

申请号：US13574405

申请日：2011-01-21

申请人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

发明人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

IPC分类号： H01L45/00 ,  H01L21/02

CPC分类号： H01L23/5228 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

摘要： Disclosed is a semiconductor device including a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction so as to be adjacent to each other, with an interlayer insulation film being interposed on a semiconductor substrate. The resistive change element includes a lower electrode, a resistive change element film made of a metal oxide and an upper electrode. Since the upper electrode on the resistive change element film is formed as part of a plug for the second wiring, a structure in which a side surface of the upper electrode is not in direct contact with the side surface of the metal oxide or the lower electrode is provided so that it is possible to realize excellent device characteristics, even when a byproduct is adhered to the side wall of the metal oxide or the lower electrode in the etching thereof.

摘要翻译： 公开了一种半导体器件，其包括在第一布线和第二布线之间的电阻变化元件，它们在垂直方向上彼此相邻地布置，层间绝缘膜插入在半导体衬底上。 电阻变化元件包括下电极，由金属氧化物和上电极制成的电阻变化元件膜。 由于电阻变化元件膜上的上电极被形成为用于第二布线的插头的一部分，所以上电极的侧表面不与金属氧化物或下电极的侧表面直接接触的结构 即使在其蚀刻中副产物附着在金属氧化物或下电极的侧壁上时，也可以实现优异的器件特性。