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    Semiconductor device and method of manufacturing the same
    1.
    发明授权
    Semiconductor device and method of manufacturing the same 有权
    半导体装置及其制造方法

    公开(公告)号：US08946668B2

    公开(公告)日：2015-02-03

    申请号：US13574405

    申请日：2011-01-21

    申请人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

    发明人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

    IPC分类号： H01L29/02 ,  H01L47/00 ,  H01L23/522 ,  H01L45/00

    CPC分类号： H01L23/5228 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a semiconductor device including a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction so as to be adjacent to each other, with an interlayer insulation film being interposed on a semiconductor substrate. The resistive change element includes a lower electrode, a resistive change element film made of a metal oxide and an upper electrode. Since the upper electrode on the resistive change element film is formed as part of a plug for the second wiring, a structure in which a side surface of the upper electrode is not in direct contact with the side surface of the metal oxide or the lower electrode is provided so that it is possible to realize excellent device characteristics, even when a byproduct is adhered to the side wall of the metal oxide or the lower electrode in the etching thereof.

    摘要翻译： 公开了一种半导体器件，其包括在第一布线和第二布线之间的电阻变化元件，它们在垂直方向上彼此相邻地布置，层间绝缘膜插入在半导体衬底上。 电阻变化元件包括下电极，由金属氧化物和上电极制成的电阻变化元件膜。 由于电阻变化元件膜上的上电极被形成为用于第二布线的插头的一部分，所以上电极的侧表面不与金属氧化物或下电极的侧表面直接接触的结构 即使在其蚀刻中副产物附着在金属氧化物或下电极的侧壁上时，也可以实现优异的器件特性。

    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120286231A1

    公开(公告)日：2012-11-15

    申请号：US13574405

    申请日：2011-01-21

    申请人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

    发明人： Yukishige Saito ,  Kimihiko Ito ,  Hiromitsu Hada

    IPC分类号： H01L45/00 ,  H01L21/02

    CPC分类号： H01L23/5228 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/1675 ,  H01L2924/0002 ,  H01L2924/00

    摘要： Disclosed is a semiconductor device including a resistive change element between a first wiring and a second wiring, which are arranged in a vertical direction so as to be adjacent to each other, with an interlayer insulation film being interposed on a semiconductor substrate. The resistive change element includes a lower electrode, a resistive change element film made of a metal oxide and an upper electrode. Since the upper electrode on the resistive change element film is formed as part of a plug for the second wiring, a structure in which a side surface of the upper electrode is not in direct contact with the side surface of the metal oxide or the lower electrode is provided so that it is possible to realize excellent device characteristics, even when a byproduct is adhered to the side wall of the metal oxide or the lower electrode in the etching thereof.

    摘要翻译： 公开了一种半导体器件，其包括在第一布线和第二布线之间的电阻变化元件，它们在垂直方向上彼此相邻地布置，层间绝缘膜插入在半导体衬底上。 电阻变化元件包括下电极，由金属氧化物和上电极制成的电阻变化元件膜。 由于电阻变化元件膜上的上电极被形成为用于第二布线的插头的一部分，所以上电极的侧表面不与金属氧化物或下电极的侧表面直接接触的结构 即使在其蚀刻中副产物附着在金属氧化物或下电极的侧壁上时，也可以实现优异的器件特性。

    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US08816312B2

    公开(公告)日：2014-08-26

    申请号：US13824098

    申请日：2011-09-20

    申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    IPC分类号： H01L29/00

    CPC分类号： H01L45/04 ,  G11C13/0007 ,  G11C13/003 ,  G11C13/0069 ,  G11C13/04 ,  G11C2013/0073 ,  G11C2213/56 ,  G11C2213/73 ,  G11C2213/75 ,  H01L27/101 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146

    摘要： A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element.

    摘要翻译： 根据本发明的半导体器件包括：单元，其包括第一开关和第二开关，其中第一开关和第二开关中的每一个包括电阻变化层，其电阻状态根据极性而改变 并且第一开关和第二开关中的每一个具有两个电极，并且其中第一开关的一个电极和第二开关的一个电极彼此连接以形成公共节点，而另一个电极 第一开关构成第一节点，第二开关的另一个电极形成第二节点; 第一布线，与第一节点连接并形成信号传输线; 以及与第二节点连接并且通过单元元件与第一布线连接的第二布线。

    Process of forming inter-level connection without increase of contact resistance
    7.
    发明授权
    Process of forming inter-level connection without increase of contact resistance 失效
    形成层间连接而不增加接触电阻的过程

    公开(公告)号：US5930675A

    公开(公告)日：1999-07-27

    申请号：US632908

    申请日：1996-04-16

    申请人： Hiromitsu Hada

    发明人： Hiromitsu Hada

    IPC分类号： H01L21/28 ,  H01L21/20 ,  H01L21/265 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763

    CPC分类号： H01L21/28525 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76877

    摘要： A natural oxide on an amorphous silicon exposed to a miniature contact hole is thermally decomposed in vacuum and an amorphous silicon is grown on the amorphous silicon without exposing to the atmosphere; the amorphous silicon is applied with heat so as to be epitaxially grown on a single crystal silicon beneath the amorphous silicon, thereby forming a conductive plug in the miniature contact hole.

    摘要翻译： 暴露于微型接触孔的非晶硅上的自然氧化物在真空中热分解，非晶硅生长在非晶硅上而不暴露于大气中; 将非晶硅施加热量，以便在非晶硅之下的单晶硅上外延生长，从而在微型接触孔中形成导电插塞。

    SEMICONDUCTOR DEVICE AND OPERATION METHOD FOR SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICE AND OPERATION METHOD FOR SAME 有权
    半导体器件及其操作方法

    公开(公告)号：US20130092895A1

    公开(公告)日：2013-04-18

    申请号：US13704225

    申请日：2011-06-09

    申请人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    发明人： Munehiro Tada ,  Makoto Miyamura ,  Hiromitsu Hada

    IPC分类号： H01L27/24

    CPC分类号： H01L27/2436 ,  G11C13/0007 ,  G11C13/0014 ,  G11C13/003 ,  G11C13/0069 ,  G11C2013/0073 ,  H01L27/101 ,  H01L27/2463 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/14 ,  H01L45/146

    摘要： A semiconductor device includes a first switching element, a second switching element, and at least one third switching element; wherein the third switching element includes a first terminal and a second terminal, wherein each of the first switching element and the second switching element includes an ion conductor, a first electrode which is disposed so as to have contact with the ion conductor and supplies metal ions to the ion conductor, and a second electrode which is disposed so as to have contact with the ion conductor and is less susceptible to ionization than the first electrode; and wherein (a) the first electrode of the first switching element and the first electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the first electrodes which are electrically connected each other or (b) the second electrode of the first switching element and the second electrode of the second switching element are electrically connected each other, and the first terminal of the third switching element is electrically connected to only the second electrodes which are electrically connected each other.

    摘要翻译： 半导体器件包括第一开关元件，第二开关元件和至少一个第三开关元件; 其中所述第三开关元件包括第一端子和第二端子，其中所述第一开关元件和所述第二开关元件中的每一个包括离子导体，所述第一电极被设置为与所述离子导体接触并提供金属离子 以及第二电极，其设置成与离子导体接触并且比第一电极不易电离; 并且其中（a）第一开关元件的第一电极和第二开关元件的第一电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第一电极 另一个或（b）第一开关元件的第二电极和第二开关元件的第二电极彼此电连接，并且第三开关元件的第一端子仅电连接到每个电连接的第二电极 其他。