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    Dielectric optical waveguide
    2.
    发明授权
    Dielectric optical waveguide 失效
    介质光波导

    公开(公告)号：US3883219A

    公开(公告)日：1975-05-13

    申请号：US42791473

    申请日：1973-12-26

    Applicant: BELL TELEPHONE LABOR INC

    Inventor： LOGAN RALPH ANDRE ,  SCHWARTZ BERTRAM ,  TRACY JR JOSEPH CHARLES ,  WIEGMANN WILLIAM

    IPC: G02B6/13 ,  H01L33/00 ,  H01S5/22 ,  G02B5/14

    CPC classification number: H01L33/0062 ,  G02B6/131 ,  H01S5/22 ,  Y10S148/051 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/118

    Abstract: A method of fabricating dielectric optical waveguides comprises the steps of: (1) fabricating a single or double heterostructure from the GaAs-AlGaAs system preferably by liquid phase epitaxy or molecular beam epitaxy; (2) forming a native oxide layer on the top surface of the heterostructure by anodization in H2O2; (3) removing a portion of the oxide layer to form a mask and hence to define the waveguide shape in the direction of light propagation; and (4) forming a mesa-like structure with optically flat side walls by etching at a slow rate in Br2-CH3OH. After step (4) two alternative techniques leading to structurally different waveguides may be followed. In one technique, an AlGaAs layer is epitaxially grown over the mesa to form a two dimensional waveguide. In the other technique, the edges of the active region of an AlGaAs double heterostructure are differentially etched in a neutral solution of H2O2. The latter step is particularly useful in the fabrication of active devices because the resulting structure is self-masking, thereby facilitating the formation of electrical contacts.

    Abstract translation: 制造介质光波导的方法包括以下步骤：（1）优选地通过液相外延或分子束外延从GaAs-AlGaAs系统制造单或双异质结构; （2）通过阳极氧化在H 2 O 2中在异质结构的顶表面上形成天然氧化物层; （3）除去氧化物层的一部分以形成掩模，从而在光传播的方向上限定波导形状; 和（4）通过在Br 2 -CH 3 OH中以缓慢的速率蚀刻形成具有光学平坦侧壁的台面状结构。 在步骤（4）之后，可以遵循导致结构不同的波导的两种替代技术。 在一种技术中，在台面上外延生长AlGaAs层以形成二维波导。 在另一种技术中，AlHAs双异质结构的有源区的边缘在H 2 O 2的中性溶液中进行差分蚀刻。 后一步骤在制造有源器件中特别有用，因为所得到的结构是自掩蔽的，从而有助于电接触的形成。

    Dielectric optical waveguides and technique for fabricating same
    4.
    发明授权
    Dielectric optical waveguides and technique for fabricating same 失效
    介质光波导及其制造技术

    公开(公告)号：US3865646A

    公开(公告)日：1975-02-11

    申请号：US42791573

    申请日：1973-12-26

    Applicant: BELL TELEPHONE LABOR INC

    Inventor： LOGAN RALPH ANDRE ,  SCHWARTZ BERTRAM ,  TRACY JR JOSEPH CHARLES ,  WIEGMANN WILLIAM

    IPC: G02B6/12 ,  G02B6/13 ,  H01L33/00 ,  H01S5/22 ,  H01L7/38 ,  H01L7/36

    CPC classification number: G02B6/12 ,  G02B6/131 ,  H01L33/0062 ,  H01S5/22 ,  Y10S148/049 ,  Y10S148/051 ,  Y10S148/056 ,  Y10S148/065 ,  Y10S148/067 ,  Y10S148/072 ,  Y10S148/118 ,  Y10S148/145 ,  Y10S438/911 ,  Y10S438/945

    Abstract: A method of fabricating dielectric optical waveguides comprises the steps of: (1) fabricating a single or double heterostructure from the GaAs-AlGaAs system preferably by liquid phase epitaxy or molecular beam epitaxy; (2) forming a native oxide layer on the top surface of the heterostructure by anodization in H2O2; (3) removing a portion of the oxide layer to form a mask and hence to define the waveguide shape in the direction of light propagation; and (4) forming a mesa-like structure with optically flat side walls by etching at a slow rate in Br2-CH3OH. After step (4) two alternative techniques leading to structurally different waveguides may be followed. In one technique, an AlGaAs layer is epitaxially grown over the mesa to form a two dimensional waveguide. In the other technique, the edges of the active region of an AlGaAs double heterostructure are differentially etched in a neutral solution of H2O2. The latter step is particularly useful in the fabrication of active devices because the resulting structure is self-masking, thereby facilitating the formation of electrical contacts.

    Abstract translation: 制造介质光波导的方法包括以下步骤：（1）优选地通过液相外延或分子束外延从GaAs-AlGaAs系统制造单或双异质结构; （2）通过阳极氧化在H 2 O 2中在异质结构的顶表面上形成天然氧化物层; （3）除去氧化物层的一部分以形成掩模，从而在光传播的方向上限定波导形状; 和（4）通过在Br 2 -CH 3 OH中以缓慢的速率蚀刻形成具有光学平坦侧壁的台面状结构。 在步骤（4）之后，可以遵循导致结构不同的波导的两种替代技术。 在一种技术中，在台面上外延生长AlGaAs层以形成二维波导。 在另一种技术中，AlHAs双异质结构的有源区的边缘在H 2 O 2的中性溶液中进行差分蚀刻。 后一步骤在制造有源器件中特别有用，因为所得到的结构是自掩蔽的，从而有助于电接触的形成。

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