公开(公告)号：US20160005799A1

公开(公告)日：2016-01-07

申请号：US14429867

申请日：2014-04-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD

Inventor： Dongfang WANG ,  Wei LIU ,  Haijing CHEN

IPC: H01L27/32 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L27/3244 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/32 ,  H01L27/3262 ,  H01L27/3265 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/786 ,  H01L29/78618 ,  H01L29/7869

Abstract: A TFT, a TFT array substrate, a manufacturing method thereof and a display device are disclosed. A source of the TFT includes a first source portion (51). A drain of the TFT includes a first drain portion (52). The first source portion (51) and the first drain portion (52) are disposed in the same layer as an active layer and respectively at opposite sides of the active layer (5). The first source portion (51) and the first drain portion (52) are in direct contact to the active layer (5) respectively. The capacitance will not be generated between the first source/drain portion (51, 52) and the gate (2), because the first source/drain portion (51,52) and the gate (2) are disposed without overlapping with each other or with a small-area overlapping region. The breakdown of a gate insulation layer caused by too large voltage of the source/drain or too many charges accumulated on the source/drain can be also avoided.

Abstract translation: 公开了TFT，TFT阵列基板及其制造方法和显示装置。 TFT的源极包括第一源极部分（51）。 TFT的漏极包括第一漏极部分（52）。 第一源极部分（51）和第一漏极部分（52）分别设置在与有源层相同的层中，分别位于有源层（5）的相对侧。 第一源极部分（51）和第一漏极部分（52）分别与有源层（5）直接接触。 由于第一源极/漏极部分（51,52）和栅极（2）彼此重叠设置，所以不会在第一源极/漏极部分（51,52）和栅极（2）之间产生电容 或与小区域重叠区域。 也可以避免源极/漏极电压过大或源极/漏极上累积的电荷过多引起的栅极绝缘层的击穿。

公开(公告)号：US20150318383A1

公开(公告)日：2015-11-05

申请号：US14800089

申请日：2015-07-15

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Xiaodi LIU ,  Li SUN ,  Haijing CHEN

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/441 ,  H01L21/467 ,  H01L21/477 ,  H01L29/786 ,  H01L21/027

CPC classification number: H01L29/78693 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02631 ,  H01L21/0273 ,  H01L21/441 ,  H01L21/467 ,  H01L21/477 ,  H01L29/66969 ,  H01L29/78618

Abstract: Embodiments of the disclosed technology provide an amorphous oxide thin film transistor (TFT), a method for preparing an amorphous oxide TFT, and a display panel. The amorphous oxide thin film transistor includes: a gate electrode, a gate insulating layer, a semiconductor active layer, a source electrode and a drain electrode. The semiconductor active layer comprises a channel layer and an ohmic contact layer, and the channel layer has a greater content of oxygen than the ohmic contact layer; the channel layer contacts the gate insulating layer, and the ohmic contact layer comprises two separated ohmic contact regions, one of which contacts the source electrode and the other of which contacts the drain electrode.

Abstract translation: 所公开技术的实施例提供无定形氧化物薄膜晶体管（TFT），制备无定形氧化物TFT的方法和显示面板。 无定形氧化物薄膜晶体管包括：栅极，栅极绝缘层，半导体有源层，源极和漏极。 半导体有源层包括沟道层和欧姆接触层，并且沟道层具有比欧姆接触层更大的氧含量; 沟道层接触栅极绝缘层，欧姆接触层包括两个分离的欧姆接触区域，其中一个接触源极电极，另一个接触漏极电极。

公开(公告)号：US20160035755A1

公开(公告)日：2016-02-04

申请号：US14422818

申请日：2014-04-30

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Yanzhao LI ,  Gang WANG ,  Haijing CHEN ,  Wulin SHEN ,  Jingang FANG

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1225 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1259 ,  H01L27/127 ,  H01L27/3244 ,  H01L29/41733 ,  H01L2924/1306

Abstract: The present invention provides array substrate and manufacturing method thereof and display device. The manufacturing method comprises: forming patterns including active regions of first and second TFTs by patterning process on substrate; forming gate insulation layer on the substrate; forming patterns including gates of the TFTs by patterning process on the substrate; forming isolation layer on the substrate; forming, on the substrate, second contacting vias for connecting sources and drains of the TFTs to respective active regions and first contacting via for connecting gate of the second TFT to source of the first TFT; and on the substrate, forming patterns of corresponding sources and drains on the second contacting vias above active regions of the TFTs, and meanwhile forming connection line for connecting gate of the second TFT to source of the first TFT above the first contacting via above gate of the second TFT.

Abstract translation: 本发明提供阵列基板及其制造方法和显示装置。 制造方法包括：通过在基板上的图案化工艺形成包括第一和第二TFT的有源区域的图案; 在基板上形成栅极绝缘层; 通过在基板上的图案化工艺形成包括TFT的栅极的图案; 在基板上形成隔离层; 在所述衬底上形成用于将所述TFT的源极和漏极连接到相应有源区的第二接触通孔，以及用于将所述第二TFT的栅极连接到所述第一TFT的源的第一接触通孔; 并且在衬底上，在TFT的有源区上方的第二接触通孔上形成相应源极和漏极的图案，同时形成用于将第一TFT的栅极连接到第一TFT的栅极的连接线， 第二TFT。

公开(公告)号：US20150240345A1

公开(公告)日：2015-08-27

申请号：US14708786

申请日：2015-05-11

Applicant: BOE TECHNOLOGY GROUP CO., LTD.

Inventor： Wulin SHEN ,  Chunsheng JIANG ,  Qing DAI ,  Haijing CHEN ,  Guangcai YUAN ,  Jingang FANG

IPC: C23C14/30 ,  C23C14/04

CPC classification number: H01L51/0013 ,  B05B5/001 ,  B05B5/0255 ,  B05B5/03 ,  B05B5/0533 ,  B05B5/057 ,  B05D1/007 ,  B05D1/60 ,  C23C14/042 ,  C23C14/12 ,  C23C14/24 ,  C23C14/243 ,  C23C14/30 ,  C23C14/32 ,  H01L51/001 ,  H01L51/0011 ,  H01L51/56

Abstract: An apparatus and method for coating an organic film are disclosed. The apparatus comprises an evaporation device, an electron emission device and a spray device; wherein the evaporation device comprises an evaporation container, the evaporation container is a linear evaporation container, in which a uniform organic gas is generated; the electron emission device is horizontally arranged over the evaporation container such that the organic gas evaporated in the evaporation container is uniformly charged and becomes charged organic gas; the spray device is provided with an electric field, under which the charged organic gas is moved toward a substrate so as to deposit the organic film on the substrate.