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公开(公告)号:US12074258B2
公开(公告)日:2024-08-27
申请号:US17332852
申请日:2021-05-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Lizhen Zhang , Guangcai Yuan , Qi Yao , Mingxing Wang
CPC classification number: H01L33/382 , H01L27/156 , H01L33/005 , H01L33/12 , H01L33/62 , H01L2933/0016
Abstract: An embodiment of the present disclosure provides a light emitting diode chip, including: a light emitting functional layer including a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially stacked, and a second semiconductor layer including a plurality of second semiconductor patterns which are arranged at intervals; a first electrode layer including a first electrode pattern electrically coupled to the first semiconductor layer; a second electrode layer disposed on a side, away from the light emitting layer, of the second semiconductor layer and including a plurality of second electrode patterns in one-to-one correspondence with the second semiconductor patterns, and the second electrode patterns are electrically coupled to the second semiconductor patterns correspondingly. Embodiments of the present disclosure further provide a method for manufacturing a light emitting diode chip and a display device.
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公开(公告)号:US11362075B2
公开(公告)日:2022-06-14
申请号:US16887368
申请日:2020-05-29
Applicant: BOE Technology Group Co., Ltd.
Inventor: Lizhen Zhang
IPC: H01L25/16 , H01L25/075 , H01L33/62
Abstract: Provided are micro light emitting diode display substrate, device and fabrication method thereof. The micro light emitting diode display substrate includes: a first base substrate; micro light emitting diodes on the first base substrate and including first and second electrodes; a common electrode layer on a side of a layer where the first and second electrodes are located away from the first base substrate, and electrically connected to the second electrodes of the micro light emitting diodes and spaced apart from the first electrodes; an interlayer insulating layer on a side of the common electrode layer away from the first base substrate and having via holes exposing the first electrodes of the micro light emitting diodes, respectively; first connection electrodes on a side of the interlayer insulating layer away from the first base substrate, and filling the via holes to be electrically connected to the first electrodes, respectively.
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3.
公开(公告)号:US20230157132A1
公开(公告)日:2023-05-18
申请号:US17625712
申请日:2021-01-28
Applicant: BOE Technology Group Co., Ltd.
Inventor: Wei He , Xiang Li , Haowei Zou , Sheng Xu , Lizhen Zhang , Shipei Li , Huili Wu
IPC: H10K59/80 , H10K59/122 , H10K59/121 , G02B30/26
CPC classification number: H10K59/80515 , H10K59/122 , H10K59/1213 , H10K59/1216 , G02B30/26 , H10K59/878
Abstract: Provided are an organic light-emitting display substrate, a manufacturing method thereof and a display device. The display substrate includes a base substrate, a metal reflection layer and multiple pixels. Each pixel includes multiple sub-anodes. The metal reflection layer is between the base substrate and a layer where the multiple sub-anodes are located. The metal reflection layer is insulated from the layer where the sub-anodes are located, the metal reflection layer includes multiple metal reflection patterns separated from each other, and each metal reflection pattern corresponds to one pixel. An orthographic projection of each metal reflection pattern onto the base substrate overlaps with orthographic projections of the multiple sub-anodes of the corresponding pixel onto the base substrate. The sub-anodes of each pixel are arranged at intervals, and a distance between orthographic projections of two adjacent sub-anodes onto the base substrate is less than or equal to a first preset threshold.
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公开(公告)号:US11711948B2
公开(公告)日:2023-07-25
申请号:US17319409
申请日:2021-05-13
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Shipei Li , Sheng Xu , Wei He , Ying Zhao , Huili Wu , Fang He , Renquan Gu , Lizhen Zhang , Yi Zhou , Wusheng Li , Qi Yao , Yang Yue
IPC: H01L27/32 , H10K59/123 , H10K59/122 , H10K59/124 , H10K71/00 , H10K59/12
CPC classification number: H10K59/123 , H10K59/122 , H10K59/124 , H10K71/00 , H10K59/1201
Abstract: The present disclosure relates to the field of display technology, and proposes a display panel, a preparation method thereof, and a display apparatus. The display panel includes an array substrate, a planarization layer group, and a plurality of sub-pixels. The array substrate includes a switch array formed by a plurality of switch units. The planarization layer group is provided on the array substrate, and nano-scale grooves are provided on the planarization layer group. The sub-pixels are provided on a side of the planarization layer group away from the array substrate. The sub-pixel includes a plurality of first electrodes, wherein the first electrode is connected to the switch unit of the array substrate, a nano-scale second gap is provided between two adjacent first electrodes, and an orthographic projection of the second gap on the array substrate is located within an orthographic projection of the groove on the array substrate.
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公开(公告)号:US11605239B2
公开(公告)日:2023-03-14
申请号:US17041516
申请日:2020-04-08
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Shipei Li , Ying Zhao , Renquan Gu , Wei He , Huili Wu , Dongsheng Yin , Sheng Xu , Lizhen Zhang , Xuefei Zhao , Fang He , Yupeng Gao
IPC: G06V40/13 , H01L27/146
Abstract: Disclosed are a fingerprint recognition sensor, a manufacturing method, and a display device. The fingerprint recognition sensor includes a base substrate, a thin film transistor, on a side of the base substrate; and a photosensitive element, on a side of the base substrate away from the thin film transistor, the thin film transistor, the base substrate, and the photosensitive element are sequentially stacked in a thickness direction perpendicular to the base substrate, the base substrate includes a conductive structure penetrating through the base substrate in the thickness direction perpendicular to the base substrate, and the photosensitive element is connected with the thin film transistor through the conductive structure.
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6.
公开(公告)号:US11309452B2
公开(公告)日:2022-04-19
申请号:US16601472
申请日:2019-10-14
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Wei He , Xiang Li , Huili Wu , Shipei Li , Fang He , Renquan Gu , Sheng Xu , Dongsheng Yin , Xuefei Zhao , Lizhen Zhang , Wusheng Li , Qi Yao
Abstract: A patterning method of a quantum dot layer, a quantum dot layer pattern, a quantum dot device, a manufacturing method of the quantum dot device, and a display apparatus are provided. The patterning method of the quantum dot layer includes: forming a quantum dot layer, in which the quantum dot layer includes quantum dots and a photoinitiator; irradiating a preset portion of the quantum dot layer by light having a preset wavelength to quench the quantum dots in the preset portion and form a patterned quantum dot layer.
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公开(公告)号:US12021173B2
公开(公告)日:2024-06-25
申请号:US17435016
申请日:2020-11-06
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Mingxing Wang , Binbin Tong , Lizhen Zhang , Chenyang Zhang , Zhen Zhang , Xiawei Yun , Guangcai Yuan , Xue Dong , Muxin Di , Zhiwei Liang , Ke Wang , Zhanfeng Cao
IPC: H01L33/38 , H01L25/075 , H01L33/00 , H01L33/46 , H01L33/62
CPC classification number: H01L33/382 , H01L25/0753 , H01L33/005 , H01L33/46 , H01L33/62 , H01L2933/0016 , H01L2933/0066
Abstract: A light-emitting diode (LED) chip includes a plurality of epitaxial structures, at least one first electrode, and a plurality of second electrodes. Any two adjacent epitaxial structures of the plurality of epitaxial structures have a gap therebetween. Each epitaxial structure includes a first semiconductor pattern, a light-emitting pattern and a second semiconductor pattern stacked in sequence. First semiconductor patterns in at least two of the plurality of epitaxial structures are connected to each other to form a first semiconductor layer. A first electrode is electrically connected to the first semiconductor layer. Each second electrode is electrically connected to the second semiconductor pattern in at least one of the plurality of epitaxial structures.
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公开(公告)号:US11903297B2
公开(公告)日:2024-02-13
申请号:US17333202
申请日:2021-05-28
Applicant: BOE Technology Group Co., Ltd.
Inventor: Lizhen Zhang , Sheng Xu , Wei He , Yi Zhou , Qi Yao , Wusheng Li
IPC: G09G3/00 , H10K59/65 , G06F3/041 , G06V40/13 , G09G3/3233 , H10K59/121 , H10K59/131
CPC classification number: H10K59/65 , G06F3/04166 , G06V40/1318 , G09G3/3233 , H10K59/121 , H10K59/131 , G09G2300/0842 , G09G2354/00
Abstract: The present disclosure discloses a display panel, a manufacturing method, a driving method and a display device. When the display panel needs to display a normal image, a pixel driving circuit and a first control circuit drive an organic light emitting diode to emit light. When the display panel needs to perform fingerprint detection of a finger, the pixel driving circuit and a second control circuit drive a micro light emitting diode to emit light, so that the light emitted by the micro light emitting diode can be received by a photoelectric converter after being reflected by the finger, the photoelectric converter can output a detection signal, and furthermore, fingerprint information of the finger can be determined according to the detection signal.
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公开(公告)号:US11569270B2
公开(公告)日:2023-01-31
申请号:US16824062
申请日:2020-03-19
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor: Sheng Xu , Huili Wu , Lizhen Zhang , Wei He , Xuefei Zhao , Shipei Li , Fang He , Dongsheng Yin , Renquan Gu , Wusheng Li , Qi Yao
IPC: H01L25/075 , H01L33/62 , H01L27/12
Abstract: A drive backboard, a manufacturing method thereof, a display panel and a display device are provided. The drive backboard includes a plurality of pixel units and a plurality of spare electrode groups. Each pixel unit includes m subpixel units, and m is a positive integer greater than or equal to 2. Each spare electrode group includes two first spare electrodes and one second spare electrode; two adjacent ith subpixel units respectively use one first spare electrode in each spare electrode group and share one second spare electrode in each spare electrode group, where i is a positive integer from 1 to m.
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