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公开(公告)号：US20250169196A1
公开(公告)日：2025-05-22
申请号：US19030639
申请日：2025-01-17
Applicant: BOE Technology Group Co., Ltd.
Inventor： Meng ZHAO
Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, belongs to the field of display technology. The method includes forming a first thin film transistor, which includes: forming a first gate of the first thin film transistor on a base substrate through a patterning process; forming a first gate insulating layer on a side of the first gate distal to the base substrate; sequentially forming a first semiconductor material layer, a second gate insulating layer and a second gate metal layer on a side of the first gate insulating layer distal to the base substrate, and forming a pattern including an active layer of the first thin film transistor, a pattern of the second gate insulating layer and a second gate of the first thin film transistor through a patterning process.
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公开(公告)号：US20240373674A1
公开(公告)日：2024-11-07
申请号：US18031651
申请日：2022-06-29
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Wei LIU , Meng ZHAO , Cheng XU , Dandan ZHOU , Renquan GU , Jianhua DU , Chaolu WANG
IPC: H10K59/121 , H10K59/131
Abstract: Provided are a display substrate and a display device. The display substrate includes a base substrate and pixel units each including a pixel driving circuit at least including a first and a second thin film transistors; a first semiconductor layer, a first conductive layer, a second conductive layer and a second semiconductor layer are sequentially arranged on the base substrate; the first semiconductor layer includes a first active layer, including a first source region, of the first thin film transistor; the first conductive layer includes a first gate of the first thin film transistor; the second conductive layer includes a first transfer electrode electrically connected to the first source region; the second semiconductor layer includes a second active layer, which includes a second source region, of the second thin film transistor; the second source region is electrically connected to the first transfer electrode.
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公开(公告)号：US20230363220A1
公开(公告)日：2023-11-09
申请号：US18221420
申请日：2023-07-13
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Hongwei TIAN , Yanan NIU , Zheng LIU , Liangjian LI , Dong LI , Meng ZHAO , Long HAN , Can ZHENG
IPC: H10K59/131 , G09G3/3266 , G09G3/3275 , H10K59/124 , H10K59/121 , H10K77/10
CPC classification number: H10K59/131 , G09G3/3266 , G09G3/3275 , H10K59/124 , H10K59/1213 , H10K77/111 , H01L27/1218
Abstract: A display panel and a display device are provided. The display panel has a display area. The display panel includes: a base substrate; a driving circuit and at least one signal line on the base substrate; and at least one insulating layer between the driving circuit and the at least one signal line. The driving circuit is disposed in a periphery of the display area; and an orthogonal projection of at least one of the signal lines on the base substrate has an overlapping area with an orthogonal projection of the driving circuit on the base substrate.
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公开(公告)号：US20230335624A1
公开(公告)日：2023-10-19
申请号：US18338421
申请日：2023-06-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Meng ZHAO
IPC: H01L29/66 , H01L27/12 , H01L29/786
CPC classification number: H01L29/66969 , H01L27/1225 , H01L27/1251 , H01L27/127 , H01L29/78648 , H01L29/7869
Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, belongs to the field of display technology. The method includes forming a first thin film transistor, which includes: forming a first gate of the first thin film transistor on a base substrate through a patterning process; forming a first gate insulating layer on a side of the first gate distal to the base substrate; sequentially forming a first semiconductor material layer, a second gate insulating layer and a second gate metal layer on a side of the first gate insulating layer distal to the base substrate, and forming a pattern including an active layer of the first thin film transistor, a pattern of the second gate insulating layer and a second gate of the first thin film transistor through a patterning process.
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公开(公告)号：US20220173349A1
公开(公告)日：2022-06-02
申请号：US17381121
申请日：2021-07-20
Applicant: BOE Technology Group Co., Ltd.
Inventor： Meng ZHAO
Abstract: A switching device structure includes: a first gate structure disposed on a side of a substrate layer; a first buffer layer disposed on a side of the first gate structure and a side of the substrate layer; a first source-drain structure and an oxide semiconductor structure disposed on a side of the first buffer layer away from the substrate layer, the oxide semiconductor structure being in contact with a part of the first source-drain structure; a first insulating layer disposed on a side of the first source-drain structure and a side of the oxide semiconductor structure which are away from the first buffer layer; and a second gate structure and a second source-drain structure disposed on a side of the first insulating layer away from the first buffer layer, the second source-drain structure being electrically connected to the other part of the first source-drain structure.
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Patent Agency Ranking
公开(公告)号：US20240395831A1
公开(公告)日：2024-11-28
申请号：US18262462
申请日：2022-09-27
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Chaolu WANG , Liuqing LI , Feng GUAN , Meng ZHAO , Jinchao ZHANG
IPC: H01L27/12
Abstract: The disclosure relates to an array substrate, a display panel, and a method for manufacturing an array substrate. The array substrate includes a first active layer on a substrate; a second active layer on a side of the first active layer away from the substrate; an intermediate layer between the first and second active layers and including a first via arriving at the first active layer, wherein the second active layer includes first, second and third sub-active layers, the first sub-active layer extending around a perimeter of the first via and in a direction away from the first via, the second sub-active layer covering a side wall of the first via, the third sub-active layer being at a bottom of the first via and covering a portion of a surface of the second active layer exposed by the first via, and wherein the second active layer is continuous.
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公开(公告)号：US20240347550A1
公开(公告)日：2024-10-17
申请号：US18755700
申请日：2024-06-27
Applicant: BOE Technology Group Co., Ltd.
Inventor： Yang LV , Feng GUAN , Jianhua DU , Meng ZHAO , Hao WU , Chaolu WANG
IPC: H01L27/12
CPC classification number: H01L27/1251 , H01L27/1222 , H01L27/124 , H01L27/127
Abstract: A method for preparing a driving backplane includes: providing a base substrate, forming a connecting layer on a side of the base substrate; forming an insulating layer group on a side of the connecting layer away from the base substrate, forming a first via hole by patterning the insulating layer group; forming inducing particles on a side of the insulating layer group away from the base substrate; forming a doped amorphous silicon layer on a side of the inducing particles away from the base substrate, forming a first conductor part by the doped amorphous silicon layer formed in the first via hole, forming a raw material part by patterning the doped amorphous silicon layer; and forming a first channel part by causing the inducing particles to induce the raw material part, wherein the first channel part is connected to the first conductor part.
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8.发明公开公开(公告)号：US20240347541A1
公开(公告)日：2024-10-17
申请号：US18749666
申请日：2024-06-21
Applicant: BOE Technology Group Co., Ltd.
Inventor： Jianhua DU , Jinxiang XUE , Xinhong LU , Yingwei LIU , Meng ZHAO , Hao WU , Feng GUAN , Yang LV , Chaolu WANG
IPC: H01L27/12 , H01L25/075 , H01L25/16 , H01L33/62
CPC classification number: H01L27/1218 , H01L25/0753 , H01L25/167 , H01L27/1244 , H01L27/1262 , H01L33/62
Abstract: A driving backplane, a display device and preparation methods therefor are provided. The method includes: providing a base substrate with first, second surfaces and a side surface connected therebetween; forming a flexible film layer on the first surface, and patterning the flexible film layer to form a first opening portion including first, second and third parts sequentially connected; bending partial flexible film layer to the second surface, such that first, second and third parts are opposite to the first, side and second surfaces; forming a conductive layer on a side of the flexible film layer away from the base substrate by using the flexible film layer as a mask, the conductive layer being formed in at least a part of the first opening portion to form a conductive strip; and at least removing the flexible film layer and the conductive layer around the conductive strip.
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公开(公告)号：US20220223828A1
公开(公告)日：2022-07-14
申请号：US17706687
申请日：2022-03-29
Inventor： Kuo SUN , Lujiang HUANGFU , Meng ZHAO , Guoqiang TANG
Abstract: A flexible display panel, a method for fabricating the same, and a display device are provided. A protruding structure located is formed in a via-hole area on a flexible base substrate so that both the protruding structure, and the portions of an organic light-emitting functional film and a top electrode layer covering the protruding structure can be removed. Thereafter an encapsulation thin film covering the patterns of the organic light-emitting functional film and the top electrode layer is formed. After the encapsulation thin film is formed, the step of removing the pattern of the encapsulation thin film in the via-hole area can be further performed to expose the flexible base substrate in the via-hole area, and after the flexible base substrate in the via-hole area is removed, a via-hole can be formed in the flexible base substrate.
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公开(公告)号：US20220165870A1
公开(公告)日：2022-05-26
申请号：US17355380
申请日：2021-06-23
Applicant: BOE TECHNOLOGY GROUP CO., LTD.
Inventor： Meng ZHAO
IPC: H01L29/66 , H01L29/786 , H01L27/12
Abstract: The present disclosure provides a display substrate and a manufacturing method thereof, and a display device, belongs to the field of display technology. The method includes forming a first thin film transistor, which includes: forming a first gate of the first thin film transistor on a base substrate through a patterning process; forming a first gate insulating layer on a side of the first gate distal to the base substrate; sequentially forming a first semiconductor material layer, a second gate insulating layer and a second gate metal layer on a side of the first gate insulating layer distal to the base substrate, and forming a pattern including an active layer of the first thin film transistor, a pattern of the second gate insulating layer and a second gate of the first thin film transistor through a patterning process.
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