公开(公告)号：US20030219541A1

公开(公告)日：2003-11-27

申请号：US10411046

申请日：2003-04-09

Applicant: Brewer Science, Inc.

Inventor： Ram W. Sabnis ,  Wu-Sheng Shih ,  Douglas J. Guerrero

IPC: B05D003/02 ,  H01L021/31

CPC classification number: G02B1/11 ,  G02B1/111 ,  G03F7/091

Abstract: An improved method for applying polymeric antireflective coatings to substrate surfaces and the resulting precursor structures are provided. Broadly, the methods comprise plasma enhanced chemical vapor depositing (PECVD) a polymer on the substrate surfaces. The most preferred starting monomers are 4-fluorostyrene, 2,3,4,5,6-pentafluorostyrene, and allylpentafluorobenzene. The PECVD processes comprise subjecting the monomers to sufficient electric current and pressure so as to cause the monomers to sublime to form a vapor which is then changed to the plasma state by application of an electric current. The vaporized monomers are subsequently polymerized onto a substrate surface in a deposition chamber. The inventive methods are useful for providing highly conformal antireflective coatings on large surface substrates having super submicron (0.25 nullm or smaller) features. The process provides a much faster deposition rate than conventional chemical vapor deposition (CVD) methods, is environmentally friendly, and is economical

Abstract translation: 提供了一种用于将聚合物抗反射涂层施加到基底表面和所得前体结构的改进方法。 广泛地，这些方法包括在衬底表面上的等离子体增强化学气相沉积（PECVD）聚合物。 最优选的起始单体是4-氟苯乙烯，2,3,4,5,6-五氟苯乙烯和烯丙基五氟苯。 PECVD方法包括使单体经受足够的电流和压力，以使单体升华以形成蒸汽，然后通过施加电流将其转化为等离子体状态。 蒸发的单体随后在沉积室中聚合到基底表面上。 本发明的方法可用于在具有超亚微米（0.25μm或更小）特征的大表面基底上提供高保形抗反射涂层。 该方法提供比常规化学气相沉积（CVD）方法更快的沉积速率，是环境友好的并且是经济的

公开(公告)号：US20030129542A1

公开(公告)日：2003-07-10

申请号：US10282542

申请日：2002-10-28

Applicant: BREWER SCIENCE, INC.

Inventor： Wu-Sheng Shih ,  James E. Lamb III ,  Mark Daffron

IPC: H01L021/31 ,  H01L021/469 ,  G03F007/00

CPC classification number: B81C1/0046 ,  B81C1/00611 ,  B81C2201/0119 ,  C08G59/68 ,  C08L63/00 ,  H01L21/02118 ,  H01L21/02282 ,  H01L21/02348 ,  H01L21/31051 ,  H01L21/312

Abstract: The present invention is directed towards planarization materials that produce little or no volatile byproducts during the hardening process when used in contact planarization processes. The materials can be hardened by photo-irradiation or by heat during the planarization process, and they include one or more types of monomers, oligomers, or mixtures thereof, an optional cross-linker, and an optional organic reactive solvents. The solvent, if used, is chemically reacted with the monomers or oligomers and thus becomes part of the polymer matrix during the curing process. These materials can be used for damascene, dual damascene, bi-layer, and multi-layer applications, microelectromechanical system (MEMS), packaging, optical devices, photonics, optoelectronics, microelectronics, and sensor devices fabrication.

Abstract translation: 本发明涉及在用于接触平面化处理时在硬化过程期间产生很少或不产生挥发性副产物的平面化材料。 这些材料可以在平坦化过程中通过光照射或加热来硬化，并且它们包括一种或多种类型的单体，低聚物或其混合物，任选的交联剂和任选的有机反应性溶剂。 溶剂（如果使用的话）与单体或低聚物发生化学反应，因此在固化过程中成为聚合物基质的一部分。 这些材料可用于镶嵌，双镶嵌，双层和多层应用，微机电系统（MEMS），封装，光学器件，光子学，光电子学，微电子学和传感器器件制造。

公开(公告)号：US20040029041A1

公开(公告)日：2004-02-12

申请号：US10373897

申请日：2003-02-24

Applicant: Brewer Science, Inc.

Inventor： Wu-Sheng Shih ,  James E. Lamb III ,  Juliet Ann Minzey Snook ,  Mark G. Daffron

IPC: G03F007/09 ,  G03F007/11 ,  B32B007/14 ,  B32B003/10 ,  G03F007/16 ,  G03F007/20 ,  G03F007/40 ,  B29C059/16 ,  H05B006/00 ,  B29C055/00 ,  B29C035/08

CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00 ,  G03F7/094 ,  G03F7/095 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31053 ,  H01L21/31144 ,  Y10T428/24802 ,  Y10T428/24851

Abstract: The present invention is directed towards contact planarization methods that can be used to planarize substrate surfaces having a wide range of topographic feature densities for lithography applications. These processes use thermally curable, photo-curable, or thermoplastic materials to provide globally planarized surfaces over topographic substrate surfaces for lithography applications. Additional coating(s) with global planarity and uniform thickness can be obtained on the planarized surfaces. These inventive methods can be utilized with single-layer, bilayer, or multi-layer processing involving bottom anti-reflective coatings, photoresists, hardmasks, and other organic and inorganic polymers in an appropriate coating sequence as required by the particular application. More specifically, this invention produces globally planar surfaces for use in dual damascene and bilayer processes with greatly improved photolithography process latitude. The invention further provides globally planar surfaces to transfer patterns using imprint lithography, nano-imprint lithography, hot-embossing lithography and stamping pattern transfer techniques.

Abstract translation: 本发明涉及可用于平面化具有用于光刻应用的宽范围的地形特征密度的衬底表面的接触平面化方法。 这些方法使用可热固化，可光固化或热塑性材料，以在光刻应用的地形衬底表面上提供全局平面化的表面。 可以在平坦化表面上获得具有全局平面度和均匀厚度的附加涂层。 这些本发明的方法可以用于单层，双层或多层加工，其涉及底部抗反射涂层，光致抗蚀剂，硬掩模和其它有机和无机聚合物，按照特定应用所要求的合适的涂层顺序。 更具体地，本发明产生用于双镶嵌和双层工艺的全局平面表面，其具有极大改善的光刻工艺纬度。 本发明还提供了使用压印光刻，纳米压印光刻，热压印光刻和冲压图案转印技术来传输图案的全局平面表面。