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公开(公告)号：US10199543B2
公开(公告)日：2019-02-05
申请号：US15454600
申请日：2017-03-09
Applicant: BRIDGELUX, INC.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
IPC: H01L33/38 , H01L33/20 , H01L27/15 , H01L33/46 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/32 , H01L33/06 , H01L33/24 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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公开(公告)号：US12080832B2
公开(公告)日：2024-09-03
申请号：US17447265
申请日：2021-09-09
Applicant: BRIDGELUX, INC.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
IPC: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/62
CPC classification number: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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公开(公告)号：US10741726B2
公开(公告)日：2020-08-11
申请号：US16259388
申请日：2019-01-28
Applicant: BRIDGELUX, INC.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
IPC: H01L33/46 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/40 , H01L33/32 , H01L33/20 , H01L33/06 , H01L33/24 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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公开(公告)号：US09105815B2
公开(公告)日：2015-08-11
申请号：US13674050
申请日：2012-11-11
Applicant: Bridgelux, Inc.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
IPC: H01L27/15 , H01L29/74 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/32 , H01L33/20 , H01L33/46
CPC classification number: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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公开(公告)号：US11133440B2
公开(公告)日：2021-09-28
申请号：US16986641
申请日：2020-08-06
Applicant: BRIDGELUX, INC.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
IPC: H01L33/46 , H01L33/38 , H01L33/42 , H01L33/44 , H01L33/40 , H01L33/32 , H01L33/20 , H01L33/06 , H01L33/24 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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Patent Agency Ranking
公开(公告)号：US09627589B2
公开(公告)日：2017-04-18
申请号：US15143423
申请日：2016-04-29
Applicant: BRIDGELUX, INC.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
IPC: H01L33/36 , H01L33/44 , H01L33/00 , H01L33/46 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/32 , H01L33/20 , H01L33/06 , H01L33/24 , H01L33/62
CPC classification number: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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公开(公告)号：US09099613B2
公开(公告)日：2015-08-04
申请号：US14456935
申请日：2014-08-11
Applicant: Bridgelux, Inc.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
CPC classification number: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
Abstract translation: 方面包括具有GaN基发光区域和金属电极的发光二极管。 金属电极可以通过多孔电介质层与GaN基发光区域物理分离，该多孔电介质提供金属电极的至少一部分与GaN基发光区域之间的反射区域。
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公开(公告)号：US20140346554A1
公开(公告)日：2014-11-27
申请号：US14456935
申请日：2014-08-11
Applicant: Bridgelux, Inc.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
CPC classification number: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
Abstract translation: 方面包括具有GaN基发光区域和金属电极的发光二极管。 金属电极可以通过多孔电介质层与GaN基发光区域物理分离，该多孔电介质提供金属电极的至少一部分与GaN基发光区域之间的反射区域。
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公开(公告)号：US09356194B2
公开(公告)日：2016-05-31
申请号：US14693667
申请日：2015-04-22
Applicant: BRIDGELUX, INC.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
IPC: H01L33/00 , H01L27/15 , H01L29/22 , H01L33/38 , H01L33/40 , H01L33/42 , H01L33/44 , H01L33/46 , H01L33/32 , H01L33/20
CPC classification number: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
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公开(公告)号：US20130270573A1
公开(公告)日：2013-10-17
申请号：US13674050
申请日：2012-11-11
Applicant: Bridgelux, Inc.
Inventor： Frank T. Shum , William W. So , Steven D. Lester
CPC classification number: H01L33/46 , H01L33/06 , H01L33/20 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/382 , H01L33/385 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/44 , H01L33/62
Abstract: Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region.
Abstract translation: 方面包括具有GaN基发光区域和金属电极的发光二极管。 金属电极可以通过多孔电介质层与GaN基发光区域物理分离，该多孔电介质提供金属电极的至少一部分与GaN基发光区域之间的反射区域。
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