公开(公告)号：US20230090133A1

公开(公告)日：2023-03-23

申请号：US17481027

申请日：2021-09-21

申请人： Bai Nie ,  Pooya Tadayon ,  Leonel R. Arana ,  Yonggang Li ,  Changhua Liu ,  Kristof Darmawikarta ,  Srinivas Venkata Ramanuja Pietambaram ,  Tarek A. Ibrahim ,  Hari Mahalingam ,  Benjamin Duong

发明人： Bai Nie ,  Pooya Tadayon ,  Leonel R. Arana ,  Yonggang Li ,  Changhua Liu ,  Kristof Darmawikarta ,  Srinivas Venkata Ramanuja Pietambaram ,  Tarek A. Ibrahim ,  Hari Mahalingam ,  Benjamin Duong

IPC分类号： G02B6/42 ,  H01L25/18 ,  H01L23/00 ,  H01L25/00

摘要： An electronic device and associated methods are disclosed. In one example, the electronic device includes a photonic integrated circuit and an in situ formed waveguide. In selected examples, the electronic device includes a photonic integrated circuit coupled to an electronic integrated circuit, in a glass layer, where a waveguide is formed in the glass layer.

公开(公告)号：US20230087124A1

公开(公告)日：2023-03-23

申请号：US17483013

申请日：2021-09-23

申请人： Bai Nie ,  Pooya Tadayon ,  Leonel R. Arana ,  Yonggang Li ,  Changhua Liu ,  Kristof Darmawikarta ,  Srinivas Venkata Ramanuja Pietambaram ,  Tarek A. Ibrahim ,  Hari Mahalingam ,  Benjamin Duong

发明人： Bai Nie ,  Pooya Tadayon ,  Leonel R. Arana ,  Yonggang Li ,  Changhua Liu ,  Kristof Darmawikarta ,  Srinivas Venkata Ramanuja Pietambaram ,  Tarek A. Ibrahim ,  Hari Mahalingam ,  Benjamin Duong

IPC分类号： G02B6/42

摘要： Various embodiments disclosed relate to photonic assemblies. The present disclosure includes methods for packaging a photonic assembly, including attaching a bridge die to a glass substrate, attaching an electronic integrated circuit die to the glass substrate and the bridge die, attaching a photonic integrated circuit die to the glass substrate and the bridge die, bonding a coupling adapter to the glass substrate and in situ forming a waveguide in the coupling adapted, the waveguide aligning with the photonic integrated circuit die.

公开(公告)号：US20230085673A1

公开(公告)日：2023-03-23

申请号：US17482056

申请日：2021-09-22

申请人： Mohamed A. Abdelmoneum ,  Eduardo Alban ,  Whitney Bryks ,  Brent R. Carlton ,  Tarek A. Ibrahim ,  Nasser A. Kurd ,  Jason Mix ,  Srinivas Venkata Ramanuja Pietambaram ,  Sarah Shahraini

发明人： Mohamed A. Abdelmoneum ,  Eduardo Alban ,  Whitney Bryks ,  Brent R. Carlton ,  Tarek A. Ibrahim ,  Nasser A. Kurd ,  Jason Mix ,  Srinivas Venkata Ramanuja Pietambaram ,  Sarah Shahraini

IPC分类号： H01L41/187 ,  H01L41/09 ,  H01L41/35 ,  B81B3/00 ,  H03H9/02

摘要： An electronic device and associated methods are disclosed. In one example, the electronic device includes a MEMS die located within a substrate, and below a processor die. In selected examples, the MEMS die includes a resonator. Example methods of forming MEMS resonator devices are also shown.

公开(公告)号：US20220189880A1

公开(公告)日：2022-06-16

申请号：US17124352

申请日：2020-12-16

申请人： Srinivas V. Pietambaram ,  Tarek A. Ibrahim ,  Gang Duan ,  Sai Vadlamani ,  Bharat Prasad Penmecha

发明人： Srinivas V. Pietambaram ,  Tarek A. Ibrahim ,  Gang Duan ,  Sai Vadlamani ,  Bharat Prasad Penmecha

IPC分类号： H01L23/538 ,  H01L23/498 ,  H01L25/065

摘要： Disclosed herein are microelectronic structures including glass cores, as well as related assemblies and methods. In some embodiments, a microelectronic structure may include a glass core having through-glass vias (TGVs) therein; a metallization region at a first face of the glass core, wherein a conductive pathway in the first metallization region is conductively coupled to at least one of the TGVs; a bridge component in the metallization region; a first conductive contact at a face of the metallization region, wherein the first conductive contact is conductively coupled to the conductive pathway; and a second conductive contact at the face of the metallization region, wherein the second conductive contact is conductively coupled to the bridge component.

公开(公告)号：US20150084139A1

公开(公告)日：2015-03-26

申请号：US14129541

申请日：2013-09-25

申请人： Weng Hong Teh ,  Tarek A. Ibrahim ,  Sarah K. Haney ,  Daniel N. Sobieski ,  Parshuram B. Zantye ,  Chad E. Mair ,  Telesphor Kamgaing

发明人： Weng Hong Teh ,  Tarek A. Ibrahim ,  Sarah K. Haney ,  Daniel N. Sobieski ,  Parshuram B. Zantye ,  Chad E. Mair ,  Telesphor Kamgaing

IPC分类号： B81B3/00 ,  B81C1/00

CPC分类号： B81C1/00246 ,  B81B2201/0271 ,  B81C1/00261 ,  B81C1/00277 ,  H01L21/568 ,  H01L24/19 ,  H01L2224/04105 ,  H01L2224/73267 ,  H01L2924/01079

摘要： Techniques and mechanisms for providing precisely fabricated structures of a semiconductor package. In an embodiment, a build-up carrier of the semiconductor package includes a layer of porous dielectric material. Seed copper and plated copper is disposed on the layer of porous dielectric material. Subsequent etching is performed to remove copper adjacent to the layer of porous dielectric material, forming a gap separating a suspended portion of a MEMS structure from the layer of porous dielectric material. In another embodiment, the semiconductor package includes a copper structure disposed between portions of an insulating layer or portions of a layer of silicon nitride material. The layer of silicon nitride material couples the insulating layer to another insulating layer. One or both of the insulating layers are each protected from desmear processing with a respective release layer structure.

摘要翻译： 用于提供半导体封装的精确制造结构的技术和机构。 在一个实施例中，半导体封装的积聚载体包括多孔介电材料层。 种子铜和电镀铜设置在多孔电介质材料层上。 进行随后的蚀刻以去除邻近多孔介电材料层的铜，形成将MEMS结构的悬置部分与多孔介电材料层分开的间隙。 在另一个实施例中，半导体封装包括设置在绝缘层的一部分之间或者氮化硅材料层的一部分的铜结构。 氮化硅材料层将绝缘层耦合到另一绝缘层。 每个绝缘层中的一个或两个保护层不受去离子处理的剥离层结构的剥离。