公开(公告)号：US12180588B2

公开(公告)日：2024-12-31

申请号：US18475316

申请日：2023-09-27

Applicant: BENEQ OY

Inventor： Johannes Wesslin ,  Pekka Soininen ,  Jonas Andersson

IPC: C23C16/455

Abstract: A loading device, arrangement, and method for loading a reaction chamber inside a vacuum chamber. The loading device includes a loading platform arranged to support the reaction chamber, the loading platform having a first end, a second end and a first direction, a first loading member provided to the loading platform, and a second loading member provided to the loading platform, the first loading member being arranged independently movable in relation to the loading platform and the second loading member in the first direction, and the second loading member being arranged independently movable in relation to the loading platform and the first loading member in the first direction.

公开(公告)号：US12104248B2

公开(公告)日：2024-10-01

申请号：US18475338

申请日：2023-09-27

Applicant: BENEQ OY

Inventor： Pekka Soininen ,  Johannes Wesslin ,  Jonas Andersson

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45561 ,  C23C16/45563

Abstract: A gas feeding cup removably provided in a fixed gas manifold structure of an atomic layer deposition apparatus and including a cup bottom including gas feeding channels extending through the cup bottom from a cup bottom outer surface to a cup bottom inner surface on the other side of the cup bottom; and a cup wall surrounding the cup bottom and extending transverse relative to the cup bottom in a direction away from the cup bottom at the inner surface side of the cup bottom such that a gas feeding space is formed by the cup wall and the cup bottom inner surface.

公开(公告)号：US11214866B2

公开(公告)日：2022-01-04

申请号：US17066724

申请日：2020-10-09

Applicant: BENEQ OY

Inventor： Pekka Soininen ,  Mika Jauhiainen

IPC: C23C16/455 ,  B05B1/00

Abstract: A nozzle head and an apparatus for subjecting a surface of a substrate to successive surface reactions of at least two precursors according to the principles of atomic layer deposition, the nozzle head includes a nozzle head body, a nozzle head output face and gas channels for transporting gas. The nozzle head further includes a first through hole through at least two of the two or more nozzles and a first tube having a tube wall and being fitted into the first through hole, said first tube including gas conduits provided in the tube wall for providing a fluid communication between the first tube and the gas channels in connection with the two or more nozzles.

公开(公告)号：US12116668B2

公开(公告)日：2024-10-15

申请号：US18475291

申请日：2023-09-27

Applicant: BENEQ OY

Inventor： Jonas Andersson ,  Johannes Wesslin ,  Pekka Soininen

IPC: C23C16/455 ,  C23C16/44

CPC classification number: C23C16/45544 ,  C23C16/4409

Abstract: An atomic layer deposition reactor and a method for operating a reactor. The reactor includes a vacuum chamber having a loading wall provided with a loading opening, and a reactor door assembly having a reactor door. The reactor door assembly is arranged to move the reactor door between a first door position in which the reactor door is against the loading wall and arranged to close the loading opening, and a second door position in which the reactor door is spaced apart from and opposite the loading wall. The reactor door assembly is further arranged to move the reactor door between the second door position, and a third door position in which the reactor door is aside from the loading opening.

公开(公告)号：US11926896B2

公开(公告)日：2024-03-12

申请号：US18475355

申请日：2023-09-27

Applicant: BENEQ OY

Inventor： Johannes Wesslin ,  Pekka Soininen ,  Jonas Andersson

IPC: C23C16/455

CPC classification number: C23C16/45544 ,  C23C16/45561 ,  C23C16/45563 ,  C23C16/45582

Abstract: An atomic layer deposition apparatus having a reaction chamber arranged inside a vacuum chamber and a fixed gas manifold assembly fixedly provided to the atomic layer deposition apparatus and arranged to supply gases from outside the vacuum chamber to the reaction chamber. The reaction chamber is a movable reaction chamber which is arranged movable relative to the vacuum chamber and relative to the fixed gas manifold assembly. The atomic layer deposition apparatus further includes a connection arrangement coupling the movable reaction chamber to the fixed gas manifold assembly. The connection arrangement includes a flexible outer flange assembly surrounding the fixed gas manifold assembly, and a first connection surface connecting to a second connection surface of the reaction chamber.

公开(公告)号：US20210214847A1

公开(公告)日：2021-07-15

申请号：US16755706

申请日：2018-10-17

Applicant: Beneq Oy

Inventor： Pekka Soininen ,  Mika Jauhiainen

IPC: C23C16/455 ,  C23C16/54

Abstract: The invention relates to a nozzle head for subjecting a surface of a substrate to successive surface reactions of at least two precursor gases according to the principles of atomic layer deposition. The nozzle head comprises a body; an output face via which at least one precursor gas is supplied towards the surface of the substrate; and two or more nozzles provided in connection with the output face for supplying the at least one precursor gas. The nozzle head further comprises a nozzle head chamber inside the body of the nozzle head, said nozzle head chamber is arranged in fluid communication with the two or more nozzles. The nozzle head chamber is provided with a gas inlet for supplying gas into the nozzle head chamber from a gas source outside the nozzle head.

公开(公告)号：US10385450B2

公开(公告)日：2019-08-20

申请号：US16311216

申请日：2017-06-30

Applicant: BENEQ OY

Inventor： Mikko Söderlund ,  Pekka Soininen ,  Paavo Timonen

IPC: C23C16/455

Abstract: A method and an apparatus for coating a substrate by subjecting a surface of the substrate to successive surface reactions of a first precursor and a second precursor in a reaction chamber. The method includes the steps of arranging the substrate to the substrate support in the reaction zone; supplying a predetermined amount of the first precursor to the reaction chamber for providing a flow of the first precursor to the reaction zone; supplying the second precursor for providing a flow of the second precursor through the reaction zone and discharging the second precursor from the reaction chamber, the second precursor being inactive to react with the first precursor; generating plasma discharge to the reaction zone for forming active precursor radicals from the second precursor supplied into the reaction zone, the active precursor radicals being active to react with the first precursor.

公开(公告)号：US20180258536A1

公开(公告)日：2018-09-13

申请号：US15751567

申请日：2016-08-30

Applicant: BENEQ OY

Inventor： Leif Keto ,  Pekka Soininen ,  Mikko Söderlund

IPC: C23C16/54 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32

CPC classification number: C23C16/545 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45557 ,  C23C16/50 ,  H01J37/3277

Abstract: The invention relates to an apparatus for processing a surface of a substrate by atomic layer deposition and to a method for operating the apparatus. The apparatus includes a deposition chamber and one or more lead-through connections provided between one or more side chambers and the deposition chamber. The one or more lead through connections includes one or more lead-through chambers and a secondary pressure device operatively connected to the one or more lead-through chambers.

公开(公告)号：US20150152552A1

公开(公告)日：2015-06-04

申请号：US14405995

申请日：2013-06-24

Applicant: BENEQ OY

Inventor： Robin Enholm ,  Leif Keto ,  Pekka Soininen

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45525 ,  C23C16/45551 ,  C23C16/45563 ,  C23C16/45574 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/54 ,  C23C16/545

Abstract: The invention relates to an apparatus and nozzle head for processing a surface of a substrate. The apparatus includes a substrate support mechanism for supporting the substrate on a substrate support plane in a process zone, a nozzle head for subjecting the surface of the substrate to successive surface reactions of at least a first precursor and a second precursor and a nozzle head support mechanism for supporting the nozzle head at a predetermined distance from the substrate support plane. The nozzle head support mechanism includes a nozzle head support surface and, that the nozzle head is supported to the nozzle head support surface.

Abstract translation: 本发明涉及一种用于处理基板表面的设备和喷嘴头。 该装置包括用于将基板支撑在处理区中的基板支撑平面上的基板支撑机构，用于使基板的表面经受至少第一前体和第二前体与喷嘴头支撑件的连续表面反应的喷嘴头 用于将喷嘴头支撑在离基板支撑平面预定距离处的机构。 喷嘴头支撑机构包括喷嘴头支撑表面，并且喷嘴头支撑到喷嘴头支撑表面。

公开(公告)号：US12000043B2

公开(公告)日：2024-06-04

申请号：US17622316

申请日：2020-06-26

Applicant: BENEQ OY

Inventor： Pekka Soininen ,  Hulda Aminoff ,  Pekka J. Soininen ,  Ville Miikkulainen

IPC: C23C16/455 ,  C23C16/448

CPC classification number: C23C16/45544 ,  C23C16/4485 ,  C23C16/45527 ,  C23C16/45561

Abstract: A precursor source arrangement for an atomic layer deposition reactor and to an atomic layer deposition apparatus wherein the precursor source arrangement includes a valve chamber having one or more supply valves, and a precursor source chamber having a precursor container space inside the precursor source chamber. The precursor source chamber includes a precursor source heat transfer element arranged to heat the precursor container inside the precursor container space. The valve chamber includes a valve chamber heat transfer element arranged to heat the one or more valves inside the valve chamber, and the valve chamber heat transfer element is arranged in heat transfer contact with the precursor source heat transfer element.