APPARATUS AND METHOD FOR THREE DIMENSIONAL INSPECTION OF WAFER SAW MARKS
    1.
    发明申请
    APPARATUS AND METHOD FOR THREE DIMENSIONAL INSPECTION OF WAFER SAW MARKS 有权
    WATER SAW MARKS三维检测装置及方法

    公开(公告)号:US20120300039A1

    公开(公告)日:2012-11-29

    申请号:US13376391

    申请日:2011-04-12

    IPC分类号: H04N13/02

    摘要: An apparatus (1) and a method for the three dimensional inspection of saw marks (2) on at least one surface (3) of a wafer (4) are disclosed. At least one camera (6) is required to capture an image of the entire surface (3) of the wafer (4). At least one line projector (8) provides a light bundle (5), centered about a central beam axis (9). The line projector (8) is arranged such that the central beam axis (9) is at an acute angle (α) with regard to the plane (P) of the wafer (4). A line shifter (12) is positioned in the light bundle (5) between each line projector (8) and the surface (3) of the wafer (4). A frame grabber (14) and an image processor (16) are used to synchronize and coordinate the image capture and the position of the pattern (20) of lines (22) on the front side (3F) and/or the back side (3B) of the wafer (4).

    摘要翻译: 公开了一种用于在晶片(4)的至少一个表面(3)上对锯痕(3)进行三维检查的装置(1)和方法。 需要至少一个照相机(6)来捕获晶片(4)的整个表面(3)的图像。 至少一个投影仪(8)提供以中心光束轴线(9)为中心的光束(5)。 线投影仪(8)被布置成使得中心束轴线(9)相对于晶片(4)的平面(P)处于锐角(α)。 线移动器(12)位于每个线投影仪(8)和晶片(4)的表面(3)之间的光束(5)中。 使用帧抓取器(14)和图像处理器(16)来同步和协调图像捕获以及在前侧(3F)和/或背面(3F)上的线(22)的图案(20)的位置 3B)。

    Apparatus and method for three dimensional inspection of wafer saw marks
    2.
    发明授权
    Apparatus and method for three dimensional inspection of wafer saw marks 有权
    晶圆锯痕三维检测装置及方法

    公开(公告)号:US09140546B2

    公开(公告)日:2015-09-22

    申请号:US13376391

    申请日:2011-04-12

    IPC分类号: G01B11/25 G01N21/95 H01L21/66

    摘要: An apparatus (1) and a method for the three dimensional inspection of saw marks (2) on at least one surface (3) of a wafer (4) are disclosed. At least one camera (6) is required to capture an image of the entire surface (3) of the wafer (4). At least one line projector (8) provides a light bundle (5), centered about a central beam axis (9). The line projector (8) is arranged such that the central beam axis (9) is at an acute angle (α) with regard to the plane (P) of the wafer (4). A line shifter (12) is positioned in the light bundle (5) between each line projector (8) and the surface (3) of the wafer (4). A frame grabber (14) and an image processor (16) are used to synchronize and coordinate the image capture and the position of the pattern (20) of lines (22) on the front side (3F) and/or the back side (3B) of the wafer (4).

    摘要翻译: 公开了一种用于在晶片(4)的至少一个表面(3)上对锯痕(3)进行三维检查的装置(1)和方法。 需要至少一个照相机(6)来捕获晶片(4)的整个表面(3)的图像。 至少一个投影仪(8)提供以中心光束轴线(9)为中心的光束(5)。 线投影仪(8)被布置成使得中心束轴线(9)相对于晶片(4)的平面(P)处于锐角(α)。 线移动器(12)位于每个线投影仪(8)和晶片(4)的表面(3)之间的光束(5)中。 使用帧抓取器(14)和图像处理器(16)来同步和协调图像捕获以及在前侧(3F)和/或背面(3F)上的线(22)的图案(20)的位置 3B)。

    Overlay metrology by pupil phase analysis
    5.
    发明授权
    Overlay metrology by pupil phase analysis 有权
    通过瞳孔相位分析覆盖度量

    公开(公告)号:US08582114B2

    公开(公告)日:2013-11-12

    申请号:US13209778

    申请日:2011-08-15

    IPC分类号: G01B11/02

    CPC分类号: G03F7/70633

    摘要: The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

    摘要翻译: 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布,其中第一覆盖目标被制造为具有第一有意覆盖,测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面,其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖,确定相关联的第一相位倾斜 具有第一和第二相位分布的总和,确定与第一和第二相位分布之间的差相关联的第二相位倾斜,校准一组相位倾斜数据,以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

    Ring light illuminator and beam shaper for ring light illuminator
    6.
    发明授权
    Ring light illuminator and beam shaper for ring light illuminator 有权
    环形灯照明器和光束整形器

    公开(公告)号:US08807813B2

    公开(公告)日:2014-08-19

    申请号:US13376249

    申请日:2011-04-28

    申请人: Andy Hill

    发明人: Andy Hill

    IPC分类号: G02B6/32

    摘要: A ring light illuminator with annularly arranged light sources is disclosed. To each light source there corresponds a beam shaper comprising a light collector, a homogenizing means for light from the light source, and an imaging means for imaging an output of the homogenizing means into an area to be illuminated. The homogenizing means in embodiments is a rod, into which light from the light collector is directed. The end of the rod opposite the light collector is imaged by the imaging means into the area to be illuminated.

    摘要翻译: 公开了一种具有环形布置的光源的环形照明器。 对于每个光源,对应于包括光收集器的光束整形器,用于来自光源的光的均匀化装置和用于将均匀化装置的输出成像到待照射区域的成像装置。 在实施例中的均质装置是一个杆,来自光收集器的光被引向该杆。 与光收集器相对的杆的端部通过成像装置成像到要照明的区域中。

    JP-8 fuel processor system
    8.
    发明授权
    JP-8 fuel processor system 有权
    JP-8燃油处理系统

    公开(公告)号:US08173082B1

    公开(公告)日:2012-05-08

    申请号:US11803370

    申请日:2007-05-14

    IPC分类号: C10K3/06 B01J8/00

    摘要: A fuel processing system for heavier sulfur-laden hydrocarbon fuels, such as JP-8 and diesel fuels, having a fuel processor in which the sulfur-laden hydrocarbon fuels are reformed using steam reforming, an integrated desulfurization/methanation unit, and a solid oxide fuel cell. The heart of the system is the desulfurization/methanation unit which has a first reactor vessel and a second reactor vessel disposed within the first reactor vessel, forming an enclosed reaction space between the first reactor vessel and the second reactor vessel. A methanation catalyst is provided in the enclosed reaction space or the second reactor vessel. A desulfurization material is provided in the other of the enclosed reaction space and the second reactor vessel. During the normal course of operation, the desulfurization material will reach a saturation point at which it is no longer able to adsorb the sulfur-containing compounds. Contrary to conventional systems in which a fuel containing sulfur is desulfurized prior to methanation in two separate desulfurizer and methanation vessels and the spent desulfurization material is regenerated, the first and second reactor vessels of this invention are separable such that the reactor vessel containing the spent desulfurization material simply can be removed and replaced with a reactor vessel containing fresh desulfurization material.

    摘要翻译: 一种用于较重含硫的碳氢化合物燃料的燃料处理系统,如JP-8和柴油燃料,具有燃料处理器,其中含硫载体的烃燃料使用蒸汽重整,一体式脱硫/甲烷化单元和固体氧化物 燃料电池。 系统的核心是脱硫/甲烷化单元,其具有设置在第一反应器容器内的第一反应器容器和第二反应器容器,在第一反应器容器和第二反应器容器之间形成封闭的反应空间。 在封闭的反应空间或第二反应器容器中提供甲烷化催化剂。 在封闭的反应空间和第二反应器容器的另一个中设置脱硫材料。 在正常运行过程中,脱硫材料将达到不再能吸附含硫化合物的饱和点。 与在两台分离的脱硫器和甲烷化容器中甲烷化之前含硫燃料脱硫和废弃脱硫材料再生的常规系统相反,本发明的第一和第二反应器容器是可分离的,使得含有废脱硫的反应器容器 材料简单地可以被包含新鲜脱硫材料的反应器容器取出并替换。

    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS
    9.
    发明申请
    OVERLAY METROLOGY BY PUPIL PHASE ANALYSIS 有权
    通过相位分析的覆盖度量

    公开(公告)号:US20130044331A1

    公开(公告)日:2013-02-21

    申请号:US13209778

    申请日:2011-08-15

    IPC分类号: G01B11/14 G01B11/26

    CPC分类号: G03F7/70633

    摘要: The present invention may include measuring a first phase distribution across a pupil plane of a portion of illumination reflected from a first overlay target of a semiconductor wafer, wherein the first overlay target is fabricated to have a first intentional overlay, measuring a second phase distribution across the pupil plane of a portion of illumination reflected from a second overlay target, wherein the second overlay target is fabricated to have a second intentional overlay in a direction opposite to and having the same magnitude as the first intentional overlay, determining a first phase tilt associated with a sum of the first and second phase distributions, determining a second phase tilt associated with a difference between the first and second phase distributions, calibrating a set of phase tilt data, and determining a test overlay value associated with the first and second overlay target.

    摘要翻译: 本发明可以包括测量跨越从半导体晶片的第一覆盖目标反射的照明部分的光瞳平面的第一相分布,其中第一覆盖目标被制造为具有第一有意覆盖,测量第二相位分布 从第二覆盖目标反射的照明部分的光瞳平面,其中第二覆盖目标被制造为具有与第一有意重叠相反并具有相同幅度的方向的第二有意覆盖,确定相关联的第一相位倾斜 具有第一和第二相位分布的总和,确定与第一和第二相位分布之间的差相关联的第二相位倾斜,校准一组相位倾斜数据,以及确定与第一和第二覆盖目标相关联的测试覆盖值 。

    RING LIGHT ILLUMINATOR AND BEAM SHAPER FOR RING LIGHT ILLUMINATOR
    10.
    发明申请
    RING LIGHT ILLUMINATOR AND BEAM SHAPER FOR RING LIGHT ILLUMINATOR 有权
    环形光照明器和光束形状光圈照明器

    公开(公告)号:US20120087143A1

    公开(公告)日:2012-04-12

    申请号:US13376249

    申请日:2011-04-28

    申请人: Andy Hill

    发明人: Andy Hill

    IPC分类号: F21V8/00 F21V29/00 F21V5/00

    摘要: A ring light illuminator with annularly arranged light sources is disclosed. To each light source there corresponds a beam shaper comprising a light collector, a homogenizing means for light from the light source, and an imaging means for imaging an output of the homogenizing means into an area to be illuminated. The homogenizing means in embodiments is a rod, into which light from the light collector is directed. The end of the rod opposite the light collector is imaged by the imaging means into the area to be illuminated.

    摘要翻译: 公开了一种具有环形布置的光源的环形照明器。 对于每个光源,对应于包括光收集器的光束整形器,用于来自光源的光的均匀化装置和用于将均匀化装置的输出成像到待照射区域的成像装置。 在实施例中的均质装置是一个杆,来自光收集器的光被引向该杆。 与光收集器相对的杆的端部通过成像装置成像到要照明的区域中。