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    Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same
    1.
    发明申请
    Magnetic memory with a magnetic tunnel junction written in a thermally assisted manner, and method for writing the same 有权
    具有以热辅助方式写入的磁性隧道结的磁存储器及其写入方法

    公开(公告)号：US20060291276A1

    公开(公告)日：2006-12-28

    申请号：US11483425

    申请日：2006-07-07

    申请人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

    发明人： Jean-Pierre Nozieres ,  Bernard Dieny ,  Olivier Redon ,  Ricardo Sousa ,  Ioan-Lucian Prejbeanu

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/1675 ,  G11C11/5607

    摘要： The invention relates to a magnetic memory written in a thermally assisted manner, each memory point (40) consisting of a magnetic tunnel junction, and the cross-section of the memory parallel to the plane of the layers forming the tunnel junction being circular or essentially circular. Said tunnel junction comprises at least one trapped layer (44) with a fixed magnetisation direction, a free layer (42) with a variable magnetisation direction, and an insulating layer (43) arranged between the free layer (42) and the trapped layer (44). According to the invention, the free layer (42) is formed from at least one soft magnetic layer and a trapped layer (41), said two layers being magnetically coupled by contact, and the operating temperature of the reading memory or resting memory is selected in such a way that it is lower than the blocking temperature of the respectively free and trapped layers.

    摘要翻译： 本发明涉及以热辅助方式写入的磁存储器，每个存储点（40）由磁性隧道结组成，并且存储器的横截面平行于形成隧道结的层的平面为圆形或基本上 圆。 所述隧道结包括具有固定磁化方向的至少一个捕获层（44），具有可变磁化方向的自由层（42）和布置在所述自由层（42）和所述被俘获层之间的绝缘层（43） 44）。 根据本发明，自由层（42）由至少一个软磁层和捕获层（41）形成，所述两层通过接触磁耦合，并且选择读取存储器或休息存储器的工作温度 使其低于分别游离和捕获的层的阻挡温度。

    Magnetic tunnel junction magnetic memory
    3.
    发明授权
    Magnetic tunnel junction magnetic memory 有权
    磁隧道结磁记忆体

    公开(公告)号：US07957181B2

    公开(公告)日：2011-06-07

    申请号：US12059869

    申请日：2008-03-31

    申请人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    发明人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    IPC分类号： G11C11/14

    CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

    摘要： This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell;one so-called “free” magnetic storage layer, the magnetization direction of which is variable;one insulating layer sandwiched between the reference layer and the storage layer.The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

    摘要翻译： 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

    Three-layered stacked magnetic spin polarization device with memory
    6.
    发明授权
    Three-layered stacked magnetic spin polarization device with memory 有权
    具有存储器的三层堆叠磁自旋极化装置

    公开(公告)号：US06603677B2

    公开(公告)日：2003-08-05

    申请号：US09988561

    申请日：2001-11-20

    申请人： Olivier Redon ,  Bernard Dieny ,  Bernard Rodmacq

    发明人： Olivier Redon ,  Bernard Dieny ,  Bernard Rodmacq

    IPC分类号： G11C1100

    CPC分类号： H01L27/226 ,  B82Y10/00 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1675 ,  H01F10/3218 ,  H01F10/3254 ,  H01F10/3268 ,  H01L43/08 ,  Y10T428/24942

    摘要： A magnetic device including at least a memory cell having a first magnetic layer with a fixed magnetization direction. The first magnetic layer spin polarizes a writing current of electrons. The memory cell includes a second magnetic layer having a three-layered stack with a variable magnetization direction. An insulating or semi-conduction layer is formed between the first and second magnetic layers. The variable magnetization direction is oriented by spins of a spin polarized writing current. The three-layered stack includes two magnetic layers separated by a non-magnetic conducting layer. The first magnetic layer aligns the variable magnetization direction with the fixed magnetization direction by directing an incident writing current of electrons perpendicular through the first magnetic layer and then perpendicular through the second magnetic layer. The first magnetic layer opposes the variable magnetization direction with the fixed magnetization direction by directing another incident writing current of electrons perpendicular through the second magnetic layer and then perpendicular through the first magnetic layer to.

    摘要翻译： 一种磁性装置，至少包括具有固定磁化方向的第一磁性层的存储单元。 第一磁性层自旋极化电子的写入电流。 存储单元包括具有可变磁化方向的三层叠层的第二磁性层。 在第一和第二磁性层之间形成绝缘或半导电层。 可变磁化方向由自旋极化写入电流的自旋取向。 三层叠层包括由非磁性导电层隔开的两层磁性层。 通过引导电子的入射写入电流垂直于第一磁性层，然后垂直于第二磁性层，第一磁性层将可变磁化方向与固定磁化方向对准。 通过引导电子的另一个入射写入电流通过第二磁性层垂直穿过第一磁性层，然后垂直于第一磁性层，使第一磁性层与固定的磁化方向相对于可变磁化方向。

    Magnetoresistive random access memory with high current density
    7.
    发明授权
    Magnetoresistive random access memory with high current density 有权
    具有高电流密度的磁阻随机存取存储器

    公开(公告)号：US07626221B2

    公开(公告)日：2009-12-01

    申请号：US11062926

    申请日：2005-02-23

    申请人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

    发明人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

    IPC分类号： H01L21/00

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/1659 ,  G11C11/1675

    摘要： The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

    摘要翻译： 存储器在半导体衬底上包括以行和列布置的每个单元矩阵，并且每个被设计为存储信息位。 列的每个单元包括磁性隧道结，其具有分别连接到线路导体的线路端子和列端子，并且通过晶体管连接到与所述列相关联的第一列导体和第一相邻列。 晶体管的栅极连接到栅极导体。 所述列的每个隧道结的列端子通过附加晶体管连接到与所述列相关联的第二列导体和第二相邻列。 附加晶体管的栅极连接到附加栅极导体。 与单元相关联的两个晶体管可以具有公共电极。

    MAGNETIC TUNNEL JUNCTION MAGNETIC MEMORY
    8.
    发明申请
    MAGNETIC TUNNEL JUNCTION MAGNETIC MEMORY 有权
    磁性隧道结磁性记忆

    公开(公告)号：US20080247072A1

    公开(公告)日：2008-10-09

    申请号：US12059869

    申请日：2008-03-31

    申请人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    发明人： Jean-Pierre Nozieres ,  Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon ,  Ioan Lucian Prejbeanu

    IPC分类号： G11B5/02

    CPC分类号： G11C11/16 ,  G11C11/1675 ,  H01L27/228 ,  H01L43/08 ,  H01L43/10 ,  Y10S977/933 ,  Y10S977/935

    摘要： This magnetic memory with a thermally-assisted write, every storage cell of which consists of at least one magnetic tunnel junction, said tunnel junction comprising at least:one magnetic reference layer, the magnetization of which is always oriented in the same direction at the time of the read of the storage cell; one so-called “free” magnetic storage layer, the magnetization direction of which is variable; one insulating layer sandwiched between the reference layer and the storage layer. The magnetization direction of the reference layer is polarized in a direction that is substantially always the same at the time of a read due to magnetostatic interaction with another fixed-magnetization layer called the “polarizing layer”.

    摘要翻译： 这种具有热辅助写入的磁存储器，其每个存储单元由至少一个磁性隧道结组成，所述隧道结至少包括：一个磁性参考层，其磁化始终在同一方向上定向 的存储单元的读取; 一个所谓的“自由”磁存储层，其磁化方向是可变的; 一个绝缘层夹在参考层和存储层之间。 由于与另一个称为“偏振层”的固定磁化层的静磁相互作用，参考层的磁化方向在读取时基本上总是相同的方向被极化。

    Magnetoresistive random access memory with high current density
    9.
    发明申请
    Magnetoresistive random access memory with high current density 有权
    具有高电流密度的磁阻随机存取存储器

    公开(公告)号：US20050195658A1

    公开(公告)日：2005-09-08

    申请号：US11062926

    申请日：2005-02-23

    申请人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

    发明人： Ricardo Sousa ,  Bernard Dieny ,  Olivier Redon

    IPC分类号： G11C11/15 ,  G11C11/16 ,  H01L21/8246 ,  H01L27/105 ,  H01L27/22 ,  G11C16/06

    CPC分类号： H01L27/228 ,  B82Y10/00 ,  G11C11/1659 ,  G11C11/1675

    摘要： The memory comprises, on a semi-conducting substrate, a matrix of cells arranged in lines and columns and each designed to store an information bit. Each cell of a column comprises a magnetic tunnel junction having a line terminal and a column terminal respectively connected to a line conductor and, by means of a transistor, to a first column conductor associated to said column and to a first adjacent column. A gate of the transistor is connected to a gate conductor. The column terminal of each tunnel junction of said column is connected, by means of an additional transistor, to a second column conductor associated to said column and to a second adjacent column. A gate of the additional transistor is connected to an additional gate conductor. The two transistors associated to a cell can have a common electrode.

    摘要翻译： 存储器在半导体衬底上包括以行和列布置的每个单元矩阵，并且每个被设计为存储信息位。 列的每个单元包括磁性隧道结，其具有分别连接到线路导体的线路端子和列端子，并且通过晶体管连接到与所述列相关联的第一列导体和第一相邻列。 晶体管的栅极连接到栅极导体。 所述列的每个隧道结的列端子通过附加晶体管连接到与所述列相关联的第二列导体和第二相邻列。 附加晶体管的栅极连接到附加栅极导体。 与单元相关联的两个晶体管可以具有公共电极。

    Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device
    10.
    再颁专利
    Magnetic tunnel junction magnetic device, memory and writing and reading methods using said device 有权
    磁隧道结磁装置，使用所述装置的存储和写入和读取方法

    公开(公告)号：USRE42619E1

    公开(公告)日：2011-08-16

    申请号：US11861974

    申请日：2002-11-14

    申请人： Bernard Dieny ,  Olivier Redon

    发明人： Bernard Dieny ,  Olivier Redon

    IPC分类号： G11C11/14

    CPC分类号： H01F10/3254 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/5607 ,  H01F10/3272 ,  H01F10/3286 ,  H01F10/329 ,  H01L27/228 ,  H01L43/08

    摘要： Magnetic tunnel junction magnetic device (16) for writing and reading uses a reference layer (20c) and a storage layer (20a) separated by a semiconductor or insulating layer (20b), which can include an antiferromagnetic layer adjacent the storage layer. The blocking temperature of the magnetisation magnetization of the storage layer is less than that of the reference layer. The storage layer is heated (22, 24) above the blocking temperature of its magnetisation magnetization. A magnetic field (34) or a magnetic torque created by the injection of spin polarized electrons is applied (26) to it orientating its magnetization with respect to that of the reference layer without modifying the orientation of the reference layer.

    摘要翻译： 用于写入和读取的磁性隧道结磁性器件（16）使用由半导体或绝缘层（20b）分离的参考层（20c）和存储层（20a），其可以包括与存储层相邻的反铁磁层。 存储层的磁化磁化的阻挡温度小于参考层的磁化强度。 储存层被加热（22,24）高于其磁化磁化的阻挡温度。 施加磁场（34）或通过注入自旋极化电子产生的磁力矩（26），使其相对于参考层的磁化取向，而不改变参考层的取向。