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公开(公告)号：US08744250B2
公开(公告)日：2014-06-03
申请号：US13193489
申请日：2011-07-28
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.
摘要翻译： 本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。
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公开(公告)号：US20130058636A1
公开(公告)日：2013-03-07
申请号：US13402106
申请日：2012-02-22
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.
摘要翻译： 本发明的实施例提供一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供了一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个翅片。 翅片可以相对于边缘环的主体具有至少一个倾斜侧面。
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公开(公告)号：US08755680B2
公开(公告)日：2014-06-17
申请号：US13402106
申请日：2012-02-22
IPC分类号： F27B5/00 , F27B5/06 , F27D5/00 , H01L21/68 , C23C16/458
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more fins formed on an energy receiving surface of the edge ring. The fins may have at least one sloped side relative to a main body of the edge ring.
摘要翻译： 本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供了一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个翅片。 翅片可以相对于边缘环的主体具有至少一个倾斜侧面。
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公开(公告)号：US20120213500A1
公开(公告)日：2012-08-23
申请号：US13193489
申请日：2011-07-28
CPC分类号： H01L21/67346 , F27D5/0037 , F27D11/12 , F27D2005/0081 , H01L21/67115 , H01L21/68735
摘要： Embodiments of the present invention provide an edge ring for supporting a substrate with increased temperature uniformity. More particularly, embodiments of the present invention provide an edge ring having one or more surface area increasing structures formed on an energy receiving surface of the edge ring.
摘要翻译： 本发明的实施例提供了一种用于支撑具有增加的温度均匀性的基板的边缘环。 更具体地，本发明的实施例提供一种边缘环，其具有形成在边缘环的能量接收表面上的一个或多个表面积增加结构。
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公开(公告)号：US08765618B2
公开(公告)日：2014-07-01
申请号：US13485699
申请日：2012-05-31
申请人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
发明人： Dean Jennings , Haifan Liang , Mark Yam , Vijay Parihar , Abhilash J. Mayur , Aaron Muir Hunter , Bruce E. Adams , Joseph M. Ranish
IPC分类号： H01L21/268
CPC分类号： B23K26/0608 , B23K26/0604 , B23K26/0613 , B23K26/073 , B23K26/0732 , B23K26/0736 , B23K26/0738 , B23K26/352 , H01L21/02675 , H01L21/2026 , H01L21/268 , H01L21/324
摘要： A thermal processing apparatus and method in which a first laser source, for example, a CO2 emitting at 10.6 μm is focused onto a silicon wafer as a line beam and a second laser source, for example, a GaAs laser bar emitting at 808 nm is focused onto the wafer as a larger beam surrounding the line beam. The two beams are scanned in synchronism in the direction of the narrow dimension of the line beam to create a narrow heating pulse from the line beam when activated by the larger beam. The energy of GaAs radiation is greater than the silicon bandgap energy and creates free carriers. The energy of the CO2 radiation is less than the silicon bandgap energy so silicon is otherwise transparent to it, but the long wavelength radiation is absorbed by the free carriers.
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6.发明授权Thermal flux laser annealing for ion implantation of semiconductor P-N junctions 有权半导体P-N结离子注入的热通量激光退火公开(公告)号：US07135392B1
公开(公告)日：2006-11-14
申请号：US11185651
申请日：2005-07-20
IPC分类号： H01L21/42
CPC分类号： H01L21/268 , B23K26/0604 , B23K26/0676 , B23K26/0738 , B23K2101/40 , G02B6/4206 , G02B6/4218 , G02B27/0994 , H01L21/67115 , H01S5/4012 , H01S5/405
摘要： A method for forming P-N junctions in a semiconductor wafer includes ion implanting dopant impurities into the wafer and annealing the wafer using a thermal flux laser annealing apparatus that includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.
摘要翻译： 一种用于在半导体晶片中形成PN结的方法包括将晶体中的掺杂杂质离子注入到晶片中并使用热通量激光退火装置退火晶片，所述热通量激光退火装置包括沿着慢轴延伸的多个平行的排列的半导体激光发射器阵列， 圆柱形透镜，覆盖相应行的激光发射器，用于沿着大致垂直于慢轴的快轴校准来自各行的光;均质光管，其具有在第一端处的输入面，用于接收来自多个柱面透镜的光;以及 在相对端的输出面，所述光管包括在所述输入和输出面之间延伸并且沿着所述慢轴的方向彼此分离的一对反射壁，以及用于扫描从均匀化光管发射的光的扫描装置 该晶片在平行于快轴的扫描方向上。
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7.发明授权Single axis light pipe for homogenizing slow axis of illumination systems based on laser diodes 有权基于激光二极管的照明系统慢轴均匀单轴光管公开(公告)号：US07129440B2
公开(公告)日：2006-10-31
申请号：US11185649
申请日：2005-07-20
CPC分类号： G02B6/003 , G02B6/0046 , G02B6/0056 , G02B6/0068
摘要： Apparatus for thermally processing a semiconductor wafer includes an array of semiconductor laser emitters arranged in plural parallel rows extending along a slow axis, plural respective cylindrical lenses overlying respective ones of the rows of laser emitters for collimating light from the respective rows along a fast axis generally perpendicular to the slow axis, a homogenizing light pipe having an input face at a first end for receiving light from the plural cylindrical lenses and an output face at an opposite end, the light pipe comprising a pair of reflective walls extending between the input and output faces and separated from one another along the direction of the slow axis, and scanning apparatus for scanning light emitted from the homogenizing light pipe across the wafer in a scanning direction parallel to the fast axis.
摘要翻译： 用于热处理半导体晶片的装置包括布置成沿着慢轴延伸的多个平行列的半导体激光发射器的阵列，多个相应的柱形透镜，覆盖相应行的激光发射器，用于沿着快轴准直来自相应行的光 垂直于慢轴的均质化光管，其具有在第一端处的输入面用于接收来自多个柱面透镜的光和相对端的输出面，所述光管包括在输入和输出之间延伸的一对反射壁 并且沿着慢轴的方向彼此分离;以及扫描装置，用于在平行于快轴的扫描方向上扫描从均匀化光管发射的光，跨过晶片。
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8.发明授权公开(公告)号：US09245786B2
公开(公告)日：2016-01-26
申请号：US13152154
申请日：2011-06-02
IPC分类号： C23C16/458 , C23C16/52 , H01L21/68 , H01L21/67
CPC分类号： H01L21/68 , H01L21/67115 , H01L21/67259
摘要： Embodiments of the present invention provide apparatus and methods for positioning a substrate in a processing chamber using capacitive sensors. One embodiment of the present invention provides an apparatus for processing a substrate. The apparatus includes first and second capacitive sensors disposed in an inner volume. The first capacitive sensor is positioned to detect a location of an edge of the substrate at a first angular location. The second capacitive sensor is positioned to detect a vertical position of the substrate.
摘要翻译： 本发明的实施例提供了使用电容式传感器将衬底定位在处理室中的装置和方法。 本发明的一个实施例提供一种用于处理衬底的装置。 该装置包括设置在内部容积中的第一和第二电容传感器。 第一电容传感器被定位成在第一角度位置处检测衬底的边缘的位置。 第二电容传感器被定位成检测基板的垂直位置。
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9.发明授权公开(公告)号：US08452166B2
公开(公告)日：2013-05-28
申请号：US12483084
申请日：2009-06-11
申请人： Joseph M. Ranish , Blake Koelmel , Aaron Hunter
发明人： Joseph M. Ranish , Blake Koelmel , Aaron Hunter
IPC分类号： A21B2/00
CPC分类号： H01L22/10 , H01L21/67115 , H01L21/67248
摘要： Embodiments of the present invention provide apparatus and method for reducing heating source radiation influence in temperature measurement during thermal processing. In one embodiment of the present invention, background radiant energy, such as an energy source of a thermal processing chamber, is marked within a selected spectrum, a characteristic of the background is then determined by measuring radiant energy at a reference wavelength within the selected spectrum and a comparing wavelength just outside the selected spectrum.
摘要翻译： 本发明的实施例提供了用于在热处理期间减少加热源辐射对温度测量的影响的装置和方法。 在本发明的一个实施例中，将背景辐射能（例如热处理室的能量源）标记在所选择的光谱内，然后通过测量所选光谱内的参考波长的辐射能来确定背景的特性 以及刚好在所选频谱之外的比较波长。
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10.发明授权Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber 有权用于在处理室中支撑，定位和旋转衬底的装置和方法公开(公告)号：US08057601B2
公开(公告)日：2011-11-15
申请号：US11746392
申请日：2007-05-09
IPC分类号： C23C16/00
CPC分类号： H01L21/6838 , H01L21/67115
摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.
摘要翻译： 提供了用于支撑，定位和旋转衬底的装置和方法。 在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。 衬底浮在上层底板上的薄层空气上。 定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。 多个倾斜的孔或气流袋被配置在上基板中，用于使气体流过其中以旋转基板以确保在加工期间的均匀加热。
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