公开(公告)号：US08747686B2

公开(公告)日：2014-06-10

申请号：US13360633

申请日：2012-01-27

申请人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

发明人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： C23C14/54 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/52

摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.

摘要翻译： 提供了用于分析过程终点的方法和底物处理系统。 检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。 这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

公开(公告)号：US08642473B2

公开(公告)日：2014-02-04

申请号：US13411398

申请日：2012-03-02

申请人： Mei Chang ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali K. Narasimhan

发明人： Mei Chang ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali K. Narasimhan

IPC分类号： H01L21/311

CPC分类号： H01L21/02063 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829

摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.

摘要翻译： 提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。 所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。 该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。 此外，该方法和装置还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸 。

公开(公告)号：US20130193108A1

公开(公告)日：2013-08-01

申请号：US13360633

申请日：2012-01-27

申请人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

发明人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

IPC分类号： B44C1/22 ,  B08B7/00 ,  B08B7/04 ,  C23C16/52 ,  B05C5/00

CPC分类号： C23C14/54 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/52

摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.

摘要翻译： 提供了用于分析过程终点的方法和底物处理系统。 检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。 这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

公开(公告)号：US20120225558A1

公开(公告)日：2012-09-06

申请号：US13411398

申请日：2012-03-02

申请人： MEI CHANG ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali Narasimhan

发明人： MEI CHANG ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali Narasimhan

IPC分类号： H01L21/311 ,  H01L21/3105

CPC分类号： H01L21/02063 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829

摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.

摘要翻译： 提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。 所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。 该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。 此外，该方法和设备还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸 。

公开(公告)号：US20120276740A1

公开(公告)日：2012-11-01

申请号：US13097016

申请日：2011-04-28

申请人： Bo Zheng ,  Arvind Sundarrajan ,  Manish Hamkar

发明人： Bo Zheng ,  Arvind Sundarrajan ,  Manish Hamkar

IPC分类号： H01L21/3205

CPC分类号： H01L21/28506 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/67207

摘要： Methods for precleaning native oxides or other contaminants from a surface of a substrate prior to forming a metal silicide layer on the substrate. In one embodiment, a method for removing native oxides from a substrate includes transferring a substrate having an oxide layer disposed thereon into a processing chamber, performing a pretreatment process on the substrate by supplying a pretreatment gas mixture into the processing chamber, performing an oxide removal process on the substrate by supplying a cleaning gas mixture into the processing chamber, wherein the cleaning gas mixture includes at least an ammonium gas and a nitrogen trifluoride, and performing a post treatment process on the cleaned substrate by supplying a post treatment gas mixture into the processing chamber

摘要翻译： 在衬底上形成金属硅化物层之前，从衬底的表面预清洁天然氧化物或其它污染物的方法。 在一个实施方案中，从衬底去除天然氧化物的方法包括将其上设置有氧化物层的衬底转移到处理室中，通过将预处理气体混合物供给到处理室中，对衬底进行预处理过程，执行氧化物去除 通过向处理室供给清洁气体混合物而在基板上进行处理，其中清洗气体混合物至少包含铵气体和三氟化氮，并且通过将后处理气体混合物供应到清洗的基板上而对清洁的基板进行后处理 处理室

公开(公告)号：US08772162B2

公开(公告)日：2014-07-08

申请号：US13906543

申请日：2013-05-31

申请人： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

发明人： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

摘要翻译： 通过在单个处理室中在衬底上依次执行两个等离子体清洗工艺，从衬底的表面除去天然氧化物和相关残留物。 第一等离子体清洁工艺通过从氨（NH 3）和三氟化氮（NF 3）气体的混合物中产生清洁等离子体，从而将清洁等离子体的产物冷凝在天然氧化物上，从而去除在基底表面上形成的天然氧化物，形成薄膜， 含有六氟硅酸铵（（NH 4）2 SiF 6），并将薄膜从衬底表面上升华。 通过从三氟化氮气体产生第二清洗等离子体，第二等离子体清洗工艺去除剩余的薄膜残留物。 第二清洗等离子体的产物与表面上存在的裸硅几埃反应，形成四氟化硅（SiF4）并提取薄膜的残留物。

公开(公告)号：US08912096B2

公开(公告)日：2014-12-16

申请号：US13097016

申请日：2011-04-28

申请人： Bo Zheng ,  Arvind Sundarrajan ,  Manish Hamkar

发明人： Bo Zheng ,  Arvind Sundarrajan ,  Manish Hamkar

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/285 ,  H01L21/02 ,  H01L21/67

CPC分类号： H01L21/28506 ,  H01L21/0206 ,  H01L21/02068 ,  H01L21/28518 ,  H01L21/67207

摘要： Methods for precleaning native oxides or other contaminants from a surface of a substrate prior to forming a metal silicide layer on the substrate. In one embodiment, a method for removing native oxides from a substrate includes transferring a substrate having an oxide layer disposed thereon into a processing chamber, performing a pretreatment process on the substrate by supplying a pretreatment gas mixture into the processing chamber, performing an oxide removal process on the substrate by supplying a cleaning gas mixture into the processing chamber, wherein the cleaning gas mixture includes at least an ammonium gas and a nitrogen trifluoride, and performing a post treatment process on the cleaned substrate by supplying a post treatment gas mixture into the processing chamber.

摘要翻译： 在衬底上形成金属硅化物层之前，从衬底的表面预清洁天然氧化物或其它污染物的方法。 在一个实施方案中，从衬底去除天然氧化物的方法包括将其上设置有氧化物层的衬底转移到处理室中，通过将预处理气体混合物供给到处理室中，对衬底进行预处理过程，执行氧化物去除 通过向处理室供给清洁气体混合物而在基板上进行处理，其中清洗气体混合物至少包含铵气体和三氟化氮，并且通过将后处理气体混合物供应到清洗的基板上而对清洁的基板进行后处理 处理室。

公开(公告)号：US08455352B1

公开(公告)日：2013-06-04

申请号：US13480091

申请日：2012-05-24

申请人： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

发明人： Bo Zheng ,  Arvind Sundarrajan ,  Xinyu Fu

IPC分类号： H01L21/44

CPC分类号： H01L21/02063 ,  H01J37/32082 ,  H01L21/02057 ,  H01L21/0206 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28568 ,  H01L21/743 ,  H01L21/768

摘要： Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

公开(公告)号：US09305838B2

公开(公告)日：2016-04-05

申请号：US13601963

申请日：2012-08-31

申请人： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

发明人： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

IPC分类号： H01L29/41 ,  H01L21/768 ,  A61Q9/04 ,  H01L23/538 ,  A61K8/46 ,  A61K8/81 ,  B82Y40/00

CPC分类号： H01L21/76877 ,  A61K8/46 ,  A61K8/8182 ,  A61K2800/884 ,  A61Q9/04 ,  B82Y40/00 ,  H01L21/76843 ,  H01L23/5384 ,  H01L29/413 ,  H01L2924/0002 ,  Y10S977/742 ,  H01L2924/00

摘要： An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

摘要翻译： 具有BEOL互连的集成电路可以包括：包括半导体器件的衬底; 在所述衬底的表面上的第一层电介质，所述第一层电介质包括用于与所述半导体器件电接触的填充通孔; 以及在所述第一介电层上的第二电介质层，所述第二介电层包括垂直于所述填充通孔的纵向轴线延伸的沟槽，所述沟槽填充有互连线，所述互连线包含交联的碳纳米管 并且物理地和电连接到填充的通孔。 使用包括前体气体分压大于碳纳米管生长从平行碳纳米管生长模式转变为交联碳的过渡分压的生长条件，将交联的CNT生长在沟槽底部的催化剂颗粒上 纳米管生长模式。

公开(公告)号：US20130228933A1

公开(公告)日：2013-09-05

申请号：US13601963

申请日：2012-08-31

申请人： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

发明人： Pravin K. Narwankar ,  Joe Griffith Cruz ,  Arvind Sundarrajan ,  Murali Narasimhan ,  Subbalakshmi Sreekala ,  Victor Pushparaj

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L21/76877 ,  A61K8/46 ,  A61K8/8182 ,  A61K2800/884 ,  A61Q9/04 ,  B82Y40/00 ,  H01L21/76843 ,  H01L23/5384 ,  H01L29/413 ,  H01L2924/0002 ,  Y10S977/742 ,  H01L2924/00

摘要： An integrated circuit with BEOL interconnects may comprise: a substrate including a semiconductor device; a first layer of dielectric over the surface of the substrate, the first layer of dielectric including a filled via for making electrical contact to the semiconductor device; and a second layer of dielectric on the first layer of dielectric, the second layer of dielectric including a trench running perpendicular to the longitudinal axis of the filled via, the trench being filled with an interconnect line, the interconnect line comprising cross-linked carbon nanotubes and being physically and electrically connected to the filled via. Cross-linked CNTs are grown on catalyst particles on the bottom of the trench using growth conditions including a partial pressure of precursor gas greater than the transition partial pressure at which carbon nanotube growth transitions from a parallel carbon nanotube growth mode to a cross-linked carbon nanotube growth mode.

摘要翻译： 具有BEOL互连的集成电路可以包括：包括半导体器件的衬底; 在所述衬底的表面上的第一层电介质，所述第一层电介质包括用于与所述半导体器件电接触的填充通孔; 以及在所述第一介电层上的第二电介质层，所述第二介电层包括垂直于所述填充通孔的纵向轴线延伸的沟槽，所述沟槽填充有互连线，所述互连线包含交联的碳纳米管 并且物理地和电连接到填充的通孔。 使用包括前体气体分压大于碳纳米管生长从平行碳纳米管生长模式转变为交联碳的过渡分压的生长条件，将交联的CNT生长在沟槽底部的催化剂颗粒上 纳米管生长模式。