公开(公告)号：US08642473B2

公开(公告)日：2014-02-04

申请号：US13411398

申请日：2012-03-02

申请人： Mei Chang ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali K. Narasimhan

发明人： Mei Chang ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali K. Narasimhan

IPC分类号： H01L21/311

CPC分类号： H01L21/02063 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829

摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.

摘要翻译： 提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。 所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。 该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。 此外，该方法和装置还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸 。

公开(公告)号：US20120225558A1

公开(公告)日：2012-09-06

申请号：US13411398

申请日：2012-03-02

申请人： MEI CHANG ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali Narasimhan

发明人： MEI CHANG ,  Linh Thanh ,  Bo Zheng ,  Arvind Sundarrajan ,  John C. Forster ,  Umesh M. Kellkar ,  Murali Narasimhan

IPC分类号： H01L21/311 ,  H01L21/3105

CPC分类号： H01L21/02063 ,  H01L21/76802 ,  H01L21/76814 ,  H01L21/76829

摘要： Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.

摘要翻译： 提供了从表面除去氧化物的方法和装置，所述表面包括硅和锗中的至少一种。 所述方法和装置特别适用于从接触结构的金属硅化物层去除天然氧化物。 该方法和装置有利地将蚀刻停止层蚀刻工艺和自然氧化物去除工艺集成在单个室中，从而在衬底转移过程期间消除自然氧化物生长或其它污染物再沉积。 此外，该方法和设备还提供了改进的三步化学反应过程，以有效地从金属硅化物层去除天然氧化物，而不会不利地改变接触结构的几何形状和形成在接触结构中的沟槽或通孔的临界尺寸 。

公开(公告)号：US08747686B2

公开(公告)日：2014-06-10

申请号：US13360633

申请日：2012-01-27

申请人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

发明人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

IPC分类号： G01L21/30 ,  G01R31/00

CPC分类号： C23C14/54 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/52

摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.

摘要翻译： 提供了用于分析过程终点的方法和底物处理系统。 检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。 这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

公开(公告)号：US20130193108A1

公开(公告)日：2013-08-01

申请号：US13360633

申请日：2012-01-27

申请人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

发明人： Bo Zheng ,  Mei Chang ,  Arvind Sundarrajan

IPC分类号： B44C1/22 ,  B08B7/00 ,  B08B7/04 ,  C23C16/52 ,  B05C5/00

CPC分类号： C23C14/54 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4404 ,  C23C16/52

摘要： Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.

摘要翻译： 提供了用于分析过程终点的方法和底物处理系统。 检测和监测该方法的副产物以确定基材处理室内各种类型的反应过程的完成。 这些方法提供了实时过程监控，从而减少了刚性限制其他衬底处理参数，提高室清洁效率和/或增加衬底处理生产量的需要。

公开(公告)号：US20100096273A1

公开(公告)日：2010-04-22

申请号：US12256418

申请日：2008-10-22

申请人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

发明人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

IPC分类号： H01L21/288

CPC分类号： H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

摘要翻译： 一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。 在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。 衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。 在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。 掺杂剂主要并入到场区域上的导电种子层中。 导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成 在开口。

公开(公告)号：US08764961B2

公开(公告)日：2014-07-01

申请号：US12256418

申请日：2008-10-22

申请人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

发明人： Qian Luo ,  Arvind Sundarrajan ,  Hua Chung ,  Xianmin Tang ,  Jick M. Yu ,  Murali K. Narasimhan

IPC分类号： C25D5/34 ,  C25D7/12

CPC分类号： H01L21/76873 ,  C25D5/02 ,  C25D21/12 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76862 ,  H01L21/76864 ,  H01L21/76877

摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.

摘要翻译： 一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。 在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。 衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。 在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。 掺杂剂主要并入到场区域上的导电种子层中。 导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成 在开口。

公开(公告)号：US07686926B2

公开(公告)日：2010-03-30

申请号：US11119350

申请日：2005-04-29

申请人： Tza-Jing Gung ,  Xinyu Fu ,  Arvind Sundarrajan ,  Edward P. Hammond, IV ,  Praburam Gopalraja ,  John C. Forster ,  Mark A. Perrin ,  Andrew S. Gillard

发明人： Tza-Jing Gung ,  Xinyu Fu ,  Arvind Sundarrajan ,  Edward P. Hammond, IV ,  Praburam Gopalraja ,  John C. Forster ,  Mark A. Perrin ,  Andrew S. Gillard

IPC分类号： C23C14/00

CPC分类号： H01J37/3266 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/358 ,  C23F4/00 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32688 ,  H01J37/3408 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

摘要翻译： 在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。 该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。 可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间 等离子体。 首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。 以更高的晶片偏压进行氩蚀刻。 应用闪光步骤，降低目标功率和晶片偏置。

公开(公告)号：US08668816B2

公开(公告)日：2014-03-11

申请号：US11933157

申请日：2007-10-31

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor for sputtering deposition materials such as tantalum, tantalum nitride and copper, for example, and its method of use, in which self-ionized plasma (SIP) sputtering and inductively coupled plasma (ICP) sputtering are promoted, either together or alternately, in the same or different chambers. Also, bottom coverage may be thinned or eliminated by ICP resputtering in one chamber and SIP in another. SIP is promoted by a small magnetron having poles of unequal magnetic strength and a high power applied to the target during sputtering. ICP is provided by one or more RF coils which inductively couple RF energy into a plasma. The combined SIP-ICP layers can act as a liner or barrier or seed or nucleation layer for hole. In addition, an RF coil may be sputtered to provide protective material during ICP resputtering. In another chamber an array of auxiliary magnets positioned along sidewalls of a magnetron sputter reactor on a side towards the wafer from the target. The magnetron preferably is a small, strong one having a stronger outer pole of a first magnetic polarity surrounding a weaker outer pole of a second magnetic polarity and rotates about the central axis of the chamber. The auxiliary magnets preferably have the first magnetic polarity to draw the unbalanced magnetic field component toward the wafer. The auxiliary magnets may be either permanent magnets or electromagnets.

摘要翻译： 用于溅射诸如钽，氮化钽和铜的沉积材料的磁控溅射反应器及其使用方法，其中促进了自离子等离子体（SIP）溅射和电感耦合等离子体（ICP）溅射，其一起或者 交替地，在相同或不同的室中。 此外，底部覆盖可以通过在一个室中的ICP再溅射和另一个室中的SIP来减薄或消除。 SIP由在溅射期间施加到靶的不均匀磁强度和高功率的磁极的小磁控管促进。 ICP由一个或多个将RF能量感应耦合到等离子体中的RF线圈提供。 组合的SIP-ICP层可以作为孔的衬垫或屏障或种子或成核层。 此外，可以在ICP溅射期间溅射RF线圈以提供保护材料。 在另一个腔室中，辅助磁体阵列沿磁控溅射反应器的侧壁朝着晶片从目标侧面定位。 磁控管优选地是小而强的，具有围绕第二磁极性较弱的外极的第一磁极的更强的外极并围绕腔的中心轴旋转。 辅助磁体优选地具有第一磁极以将不平衡的磁场分量拉向晶片。 辅助磁体可以是永磁体或电磁体。

公开(公告)号：US08696875B2

公开(公告)日：2014-04-15

申请号：US10495506

申请日：2002-11-14

申请人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

发明人： Peijun Ding ,  Rong Tao ,  Zheng Xu ,  Daniel C. Lubben ,  Suraj Rengarajan ,  Michael A. Miller ,  Arvind Sundarrajan ,  Xianmin Tang ,  John C. Forster ,  Jianming Fu ,  Roderick C. Mosely ,  Fusen Chen ,  Praburam Gopalraja

IPC分类号： C23C14/35

CPC分类号： C23C14/046 ,  C23C14/345 ,  C23C14/3457 ,  C23C14/35 ,  C23C14/358 ,  C23C14/564 ,  C23C14/568 ,  H01J37/321 ,  H01J37/3402 ,  H01J37/3408 ,  H01J37/3441 ,  H01J2237/3327 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76814 ,  H01L21/76843 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76868 ,  H01L21/76871 ,  H01L21/76873 ,  H01L21/76876 ,  H01L21/76877 ,  H01L2221/1089

摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).

摘要翻译： 公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。 在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。 优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转 所述腔室使用旋转装置（446,448,450）。 辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。 氩（426）通过阀（428）供应。 目标（416）被供电（434）。

公开(公告)号：US08871064B2

公开(公告)日：2014-10-28

申请号：US12695643

申请日：2010-01-28

申请人： Tza-Jing Gung ,  Xinyu Fu ,  Arvind Sundarrajan ,  Edward P. Hammond, IV ,  Praburam Gopalraja ,  John C. Forster ,  Mark A. Perrin ,  Andrew S. Gillard

发明人： Tza-Jing Gung ,  Xinyu Fu ,  Arvind Sundarrajan ,  Edward P. Hammond, IV ,  Praburam Gopalraja ,  John C. Forster ,  Mark A. Perrin ,  Andrew S. Gillard

IPC分类号： C23C14/34 ,  H01J37/32 ,  C23C14/35 ,  C23C14/04 ,  H01L21/768 ,  H01J37/34 ,  C23C14/16 ,  H01L21/285 ,  C23F4/00 ,  C23C14/06

CPC分类号： H01J37/3266 ,  C23C14/046 ,  C23C14/0641 ,  C23C14/165 ,  C23C14/358 ,  C23F4/00 ,  H01J37/321 ,  H01J37/32623 ,  H01J37/32688 ,  H01J37/3408 ,  H01L21/2855 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76865

摘要： A multi-step process performed in a plasma sputter chamber including sputter deposition from the target and argon sputter etching of the substrate. The chamber includes a quadruple electromagnetic coil array coaxially arranged in a rectangular array about a chamber axis outside the sidewalls of a plasma sputter reactor in back of an RF coil within the chamber. The coil currents can be separately controlled to produce different magnetic field distributions, for example, between a sputter deposition mode in which the sputter target is powered to sputter target material onto a wafer and a sputter etch mode in which the RF coil supports the argon sputtering plasma. A TaN/Ta barrier is first sputter deposited with high target power and wafer bias. Argon etching is performed with even higher wafer bias. A flash step is applied with reduced target power and wafer bias.

摘要翻译： 在等离子体溅射室中执行的包括从靶的溅射沉积和对衬底的氩溅射蚀刻的多步骤过程。 该腔室包括一个四重电磁线圈阵列，该四极电磁线圈阵列围绕室内RF射频线圈背面的等离子体溅射反应器的侧壁外的腔室轴线同轴地布置。 可以单独控制线圈电流以产生不同的磁场分布，例如在其中溅射靶被驱动以将靶材料溅射到晶片上的溅射沉积模式和其中RF线圈支撑氩溅射的溅射蚀刻模式之间 等离子体。 首先以高目标功率和晶片偏置溅射沉积TaN / Ta势垒。 以更高的晶片偏压进行氩蚀刻。 应用闪光步骤，降低目标功率和晶片偏置。