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1.发明授权Fully decoupled LC-tank based oscillator topology for low phase noise and high oscillation amplitude applications 有权用于低相位噪声和高振荡振幅应用的完全解耦LC-Tank的振荡器拓扑公开(公告)号：US08773215B2
公开(公告)日：2014-07-08
申请号：US13228779
申请日：2011-09-09
申请人： Bodhisatwa Sadhu , Jean-Oliver Plouchart , Scott K. Reynolds , Alexander V. Rylyakov , Jose A. Tierno
发明人： Bodhisatwa Sadhu , Jean-Oliver Plouchart , Scott K. Reynolds , Alexander V. Rylyakov , Jose A. Tierno
IPC分类号： H03B1/00
CPC分类号： H03B5/1228 , H03B5/1215 , H03B5/1278
摘要： There is provided a tank based oscillator. The oscillator includes one or more active devices, one or more passive devices, and a tank circuit decoupled from the active devices using at least one of the one or more passive devices. A coupling ratio between the tank circuit and the one or more active devices is set such that a maximum value of an oscillation amplitude of the tank circuit is limited based upon a breakdown of only the one or more passive devices.
摘要翻译： 提供了一个基于槽的振荡器。 所述振荡器包括一个或多个有源器件，一个或多个无源器件以及使用所述一个或多个无源器件中的至少一个与所述有源器件解耦的储能电路。 设置储能电路和一个或多个有源器件之间的耦合比，使得基于仅一个或多个无源器件的击穿来限制储能电路的振荡幅度的最大值。
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公开(公告)号：US20140042442A1
公开(公告)日：2014-02-13
申请号：US13572245
申请日：2012-08-10
CPC分类号： H01L23/57 , G06F7/588 , G06F21/73 , G09C1/00 , H01L22/34 , H01L2924/0002 , H04L9/0866 , H01L2924/00
摘要： The present disclosure relates to a secure device having a physical unclonable function and methods of manufacturing such a secure device. The device includes a substrate and at least one high-k/metal gate device formed on the substrate. The at least one high-k/metal gate device represents the physical unclonable function. In some cases, the at least one high-k/metal gate device may be subjected a variability enhancement. In some cases, the secure device may include a measurement circuit for measuring a property of the at least one high-k/metal gate device.
摘要翻译： 本公开涉及具有物理不可克隆功能的安全装置和制造这种安全装置的方法。 该器件包括衬底和形成在衬底上的至少一个高k /金属栅极器件。 至少一个高k /金属栅极器件表示物理不可克隆功能。 在一些情况下，可以对至少一个高k /金属栅极器件进行可变性增强。 在一些情况下，安全装置可以包括用于测量至少一个高k /金属门装置的特性的测量电路。
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3.发明申请Method of checking the layout versus the schematic of multi-fingered MOS transistor layouts using a sub-circuit based extraction 失效使用基于子电路的提取来检查布局与多指MOS晶体管布局的示意图的方法公开(公告)号：US20050216873A1
公开(公告)日：2005-09-29
申请号：US10807478
申请日：2004-03-23
申请人： Raminderpal Singh , Yue Tan , Jean-Oliver Plouchart , Lawrence Wagner , Mohamed Talbi , John Safran , Kun Wu
发明人： Raminderpal Singh , Yue Tan , Jean-Oliver Plouchart , Lawrence Wagner , Mohamed Talbi , John Safran , Kun Wu
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F17/5022
摘要： A sub-circuit based extraction method which extracts a multi-finger MOS transistor directly as a sub-circuit is described. By adding three marking layers, the method provides the layout extracted netlist with a complete list of device geometric parameters corresponding to the device properties as presented in the sub-circuit model based schematic netlist. By performing a layout-versus-schematic comparison based on all geometric parameters extracted, the layout checking is performed in a complete and accurate way where each device parameter is checked against the corresponding design schematic. This complete and accurate geometric parameter comparison enhances the confidence level of the layout physical verification.
摘要翻译： 描述了一种基于子电路的提取方法，其直接提取多指状MOS晶体管作为子电路。 通过添加三个标记层，该方法为布局提取的网表提供了与基于子电路模型的示意图网表中所示的设备属性对应的设备几何参数的完整列表。 通过基于提取的所有几何参数执行布局与原理图比较，以完整和准确的方式执行布局检查，其中根据相应的设计原理图检查每个设备参数。 这种完整和准确的几何参数比较增强了布局物理验证的置信度。
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4.发明授权Flash analog to digital converter with method and system for dynamic calibration 有权闪存模数转换器，具有用于动态校准的方法和系统公开(公告)号：US08350737B2
公开(公告)日：2013-01-08
申请号：US13004883
申请日：2011-01-12
IPC分类号： H03M1/10
CPC分类号： H03M1/1061 , H03M1/365
摘要： A flash analog to digital converter and a method and system for dynamically calibrating the flash analog to digital converter. The analog to digital converter may include a track and hold circuit and a plurality of comparators. The analog to digital converter may also include an under-sampling circuit configured to convert a digitized reference signal into an under-sampled digitized reference signal with a frequency of the calibration frequency divided by a positive number M. The under-sampling circuit may be further configured to calibrate a subsequent signal based on the under-sampled digitized reference signal.
摘要翻译： 闪存模数转换器和用于动态校准闪存模数转换器的方法和系统。 模数转换器可以包括轨道和保持电路以及多个比较器。 模数转换器还可以包括欠采样电路，其被配置为将校准频率的频率除以正数M将数字化参考信号转换为欠采样的数字化参考信号。欠采样电路可以进一步 被配置为基于欠采样的数字化参考信号校准后续信号。
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公开(公告)号：US08121620B2
公开(公告)日：2012-02-21
申请号：US11689653
申请日：2007-03-22
申请人： Jonghae Kim , Moon J. Kim , Jean-Oliver Plouchart
发明人： Jonghae Kim , Moon J. Kim , Jean-Oliver Plouchart
CPC分类号： G01S5/0036 , G01S5/10 , G01S2205/002 , G01S2205/008 , H04W64/00
摘要： A system, method, service and mobile device are disclosed for providing a location of the mobile device. The invention utilizes a mobile phone with a global positioning system (GPS) module which is located in a wireless network. A third party device is able to submit a location query to a mobile telephone service operator (MTSO). This location query includes the mobile phone's telephone number. Using the telephone number, the MTSO determines the base station with which the mobile phone is associated. The location query is then forwarded to the mobile phone via the base station. The mobile phone collects the GPS data from the GPS module and forwards the GPS data to the base station. The base station converts the GPS data to location information and forwards the location information to the third party device via the MTSO.
摘要翻译： 公开了一种用于提供移动设备的位置的系统，方法，服务和移动设备。 本发明利用具有位于无线网络中的全球定位系统（GPS）模块的移动电话。 第三方设备能够向移动电话服务运营商（MTSO）提交位置查询。 该位置查询包括手机的电话号码。 使用电话号码，MTSO确定与移动电话相关联的基站。 然后，位置查询经由基站转发到移动电话。 手机从GPS模块收集GPS数据，并将GPS数据转发给基站。 基站将GPS数据转换为位置信息，并通过MTSO将位置信息转发给第三方设备。
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公开(公告)号：US07689946B2
公开(公告)日：2010-03-30
申请号：US11550818
申请日：2006-10-19
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F17/5036
摘要： A fast FET and a method and system for designing the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
摘要翻译： 一种快速FET，以及用于设计快速FET的方法和系统。 该方法包括：选择场效应晶体管的参考设计，场效应晶体管包括源极，漏极，源极和漏极之间的沟道，沟道上的栅电极，至少一个源极和源极 所述至少一个源极接触件与所述栅电极隔开第一距离，所述至少一个漏极接触件与所述栅电极间隔开第二距离; 并且调整第一距离和第二距离以最大化场效应晶体管的性能参数以产生用于场效应晶体管的快速设计。
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公开(公告)号：US20080231499A1
公开(公告)日：2008-09-25
申请号：US11689653
申请日：2007-03-22
申请人： Jonghae Kim , Moon J. Kim , Jean-Oliver Plouchart
发明人： Jonghae Kim , Moon J. Kim , Jean-Oliver Plouchart
IPC分类号： G01S13/08
CPC分类号： G01S5/0036 , G01S5/10 , G01S2205/002 , G01S2205/008 , H04W64/00
摘要： A system, method, service and mobile device are disclosed for providing a location of the mobile device. The invention utilizes a mobile phone with a global positioning system (GPS) module which is located in a wireless network. A third party device is able to submit a location query to a mobile telephone service operator (MTSO). This location query includes the mobile phone's telephone number. Using the telephone number, the MTSO determines the base station with which the mobile phone is associated. The location query is then forwarded to the mobile phone via the base station. The mobile phone collects the GPS data from the GPS module and forwards the GPS data to the base station. The base station converts the GPS data to location information and forwards the location information to the third party device via the MTSO.
摘要翻译： 公开了一种用于提供移动设备的位置的系统，方法，服务和移动设备。 本发明利用具有位于无线网络中的全球定位系统（GPS）模块的移动电话。 第三方设备能够向移动电话服务运营商（MTSO）提交位置查询。 该位置查询包括手机的电话号码。 使用电话号码，MTSO确定与移动电话相关联的基站。 然后，位置查询经由基站转发到移动电话。 手机从GPS模块收集GPS数据，并将GPS数据转发给基站。 基站将GPS数据转换为位置信息，并通过MTSO将位置信息转发给第三方设备。
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8.发明申请FLASH ANALOG TO DIGITAL CONVERTER WITH METHOD AND SYSTEM FOR DYNAMIC CALIBRATION 有权数字转换器的闪烁模拟与动态校准的方法和系统公开(公告)号：US20120176259A1
公开(公告)日：2012-07-12
申请号：US13004883
申请日：2011-01-12
IPC分类号： H03M1/06
CPC分类号： H03M1/1061 , H03M1/365
摘要： A flash analog to digital converter and a method and system for dynamically calibrating the flash analog to digital converter. The analog to digital converter may include a track and hold circuit and a plurality of comparators. The analog to digital converter may also include an under-sampling circuit configured to convert a digitized reference signal into an under-sampled digitized reference signal with a frequency of the calibration frequency divided by a positive number M. The under-sampling circuit may be further configured to calibrate a subsequent signal based on the under-sampled digitized reference signal.
摘要翻译： 闪存模数转换器和用于动态校准闪存模数转换器的方法和系统。 模数转换器可以包括轨道和保持电路以及多个比较器。 模数转换器还可以包括欠采样电路，其被配置为将校准频率的频率除以正数M将数字化参考信号转换为欠采样的数字化参考信号。欠采样电路可以进一步 被配置为基于欠采样的数字化参考信号校准后续信号。
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公开(公告)号：US20080109770A1
公开(公告)日：2008-05-08
申请号：US11550818
申请日：2006-10-19
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G06F17/5036
摘要： A fast FET and a method and system for designing the fast FET. The method includes: selecting a reference design for a field effect transistor, the field effect transistor including a source, a drain, a channel between the source and drain, a gate electrode over the channel, at least one source contact to the source and at least one contact to the drain, the at least one source contact spaced a first distance from the gate electrode and the at least one drain contact spaced a second distance from the gate electrode; and adjusting the first distance and the second distance to maximize a performance parameter of the field effect transistor to create a fast design for the field effect transistor.
摘要翻译： 一种快速FET，以及用于设计快速FET的方法和系统。 该方法包括：选择场效应晶体管的参考设计，场效应晶体管包括源极，漏极，源极和漏极之间的沟道，沟道上的栅电极，至少一个源极和源极 所述至少一个源极接触件与所述栅电极隔开第一距离，所述至少一个漏极接触件与所述栅电极间隔开第二距离; 并且调整第一距离和第二距离以最大化场效应晶体管的性能参数以产生用于场效应晶体管的快速设计。
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公开(公告)号：US08741713B2
公开(公告)日：2014-06-03
申请号：US13572245
申请日：2012-08-10
IPC分类号： H01L21/336
CPC分类号： H01L23/57 , G06F7/588 , G06F21/73 , G09C1/00 , H01L22/34 , H01L2924/0002 , H04L9/0866 , H01L2924/00
摘要： The present disclosure relates to a secure device having a physical unclonable function and methods of manufacturing such a secure device. The device includes a substrate and at least one high-k/metal gate device formed on the substrate. The at least one high-k/metal gate device represents the physical unclonable function. In some cases, the at least one high-k/metal gate device may be subjected a variability enhancement. In some cases, the secure device may include a measurement circuit for measuring a property of the at least one high-k/metal gate device.
摘要翻译： 本公开涉及具有物理不可克隆功能的安全装置和制造这种安全装置的方法。 该器件包括衬底和形成在衬底上的至少一个高k /金属栅极器件。 至少一个高k /金属栅极器件表示物理不可克隆功能。 在一些情况下，可以对至少一个高k /金属栅极器件进行可变性增强。 在一些情况下，安全装置可以包括用于测量至少一个高k /金属门装置的特性的测量电路。
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