公开(公告)号：US08980000B2

公开(公告)日：2015-03-17

申请号：US11544075

申请日：2006-10-06

申请人： Bojan Mitrovic ,  Alex Gurary ,  William Quinn ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  William Quinn ,  Eric A. Armour

IPC分类号： C30B25/14 ,  C30B25/16 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

摘要： In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

摘要翻译： 在用于在衬底或其它CVD反应器系统上生长外延层的旋转盘式反应器中，在与盘的旋转轴线不同的径向距离处的气体入口处朝向衬底的气体具有基本上相同的气体流速/速度， 每个入口气体密度相同。 朝向远离轴的盘的部分的气体可以包括比指向盘的靠近轴的部分的气体更高的反应气体浓度，使得与轴的不同距离处的衬底表面的部分基本上接收 采用相同量的每单位面积的反应气体，以及在与旋转轴线不同的径向距离处具有不同相对分子量的载气的组合基本上使反应器各区域中的气体密度相等。 该系统可以在多个气体入口处的组合或载气施加，多个入口处的载体和反应物气体的组合，并且当提供至少两种不同分子量的气体时，可以与任意大量的气体一起使用 。 在反应器内实现线性流动模式，避免层流再循环区域，并允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US09273395B2

公开(公告)日：2016-03-01

申请号：US12951361

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US08152923B2

公开(公告)日：2012-04-10

申请号：US12008705

申请日：2008-01-11

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

公开(公告)号：US20110091648A1

公开(公告)日：2011-04-21

申请号：US12951361

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/18

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

公开(公告)号：US20110088623A1

公开(公告)日：2011-04-21

申请号：US12951341

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/18 ,  B67D7/06

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US20080173735A1

公开(公告)日：2008-07-24

申请号：US12008705

申请日：2008-01-11

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： F23D11/38

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US08287646B2

公开(公告)日：2012-10-16

申请号：US12951341

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US10167554B2

公开(公告)日：2019-01-01

申请号：US13333152

申请日：2011-12-21

申请人： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

发明人： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/46 ,  C30B25/16 ,  C30B29/06 ,  H01L21/02 ,  H01L21/687

摘要： Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

公开(公告)号：US20120171870A1

公开(公告)日：2012-07-05

申请号：US13333152

申请日：2011-12-21

申请人： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

发明人： Bojan Mitrovic ,  Guanghua Wei ,  Eric A. Armour ,  Ajit Paranjpe

IPC分类号： H01L21/306 ,  B05C13/00 ,  H01L21/302 ,  C23C16/46 ,  C23C16/458 ,  H01L21/683 ,  B44C1/22 ,  C23C16/455

CPC分类号： C23C16/4585 ,  C23C16/45504 ,  C23C16/45508 ,  C23C16/45591 ,  C23C16/4584 ,  C23C16/46 ,  C30B25/165 ,  C30B29/06 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771 ,  H01L21/68785

摘要： Apparatus for treating wafers using a wafer carrier rotated about an axis is provided with a ring which surrounds the wafer carrier during operation. Treatment gasses directed onto a top surface of the carrier flow outwardly away from the axis over the carrier and over the ring, and pass downstream outside of the ring. The outwardly flowing gasses form a boundary over the carrier and ring. The ring helps to maintain a boundary layer of substantially uniform thickness over the carrier, which promotes uniform treatment of the wafers.

摘要翻译： 使用绕轴旋转的晶片载体处理晶片的装置在操作期间设置有围绕晶片载体的环。 引导到载体的顶表面上的处理气体向外离开载体上方的轴并且越过环，并且在环的下游向下游。 向外流动的气体在载体和环上形成边界。 该环有助于在载体上保持基本均匀厚度的边界层，这促进了晶片的均匀处理。

公开(公告)号：US08603248B2

公开(公告)日：2013-12-10

申请号：US11352098

申请日：2006-02-10

申请人： Alex Gurary ,  Eric A. Armour ,  Richard Hoffman ,  Jonathan Cruel

发明人： Alex Gurary ,  Eric A. Armour ,  Richard Hoffman ,  Jonathan Cruel

IPC分类号： C23C16/00

CPC分类号： C23C16/4586

摘要： A system and method for evenly heating a substrate placed in a wafer carrier used in wafer treatment systems such as chemical vapor deposition reactors, wherein a first pattern of wafer compartments is provided on the top of the wafer carrier, such as one or more rings of wafer carriers, and a second pattern of inlaid material dissimilar to the wafer carrier material is inlaid on the bottom of the wafer carrier, and the second pattern of inlaid material is substantially the opposite of the first pattern of wafer compartments, such that there are at least as many material interfaces in intermediate regions without wafer compartments as there are in wafer carrying regions with wafers and wafer compartments.

摘要翻译： 一种系统和方法，用于均匀地加热放置在诸如化学气相沉积反应器的晶片处理系统中使用的晶片载体中的基板，其中晶片隔室的第一图案设置在晶片载体的顶部，例如一个或多个 晶片载体和与晶片载体材料不相似的嵌入材料的第二图案镶嵌在晶片载体的底部上，并且第二图案的镶嵌材料基本上与晶片隔室的第一图案相反，使得存在 在没有晶片隔间的中间区域中的材料界面最少，因为在具有晶片和晶片隔室的晶片承载区域中。