公开(公告)号：US09273395B2

公开(公告)日：2016-03-01

申请号：US12951361

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/455

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US08152923B2

公开(公告)日：2012-04-10

申请号：US12008705

申请日：2008-01-11

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

公开(公告)号：US20110091648A1

公开(公告)日：2011-04-21

申请号：US12951361

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/18

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

公开(公告)号：US20110088623A1

公开(公告)日：2011-04-21

申请号：US12951341

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23C16/18 ,  B67D7/06

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US20080173735A1

公开(公告)日：2008-07-24

申请号：US12008705

申请日：2008-01-11

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： F23D11/38

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US08980000B2

公开(公告)日：2015-03-17

申请号：US11544075

申请日：2006-10-06

申请人： Bojan Mitrovic ,  Alex Gurary ,  William Quinn ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  William Quinn ,  Eric A. Armour

IPC分类号： C30B25/14 ,  C30B25/16 ,  C23C16/455

CPC分类号： C30B25/14 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/52 ,  C30B25/08 ,  C30B25/12 ,  C30B25/165

摘要： In a rotating disk reactor for growing epitaxial layers on substrate or other CVD reactor system, gas directed toward the substrates at gas inlets at different radial distances from the axis of rotation of the disk has both substantially the same gas flow rate/velocity and substantially the same gas density at each inlet. The gas directed toward portions of the disk remote from the axis may include a higher concentration of a reactant gas than the gas directed toward portions of the disk close to the axis, so that portions of the substrate surfaces at different distances from the axis receive substantially the same amount of reactant gas per unit area, and a combination of carrier gases with different relative molecular weights at different radial distances from the axis of rotation are employed to substantially make equal the gas density in each region of the reactor. The system may be applied with a combination or carrier gases at multiple gas inlets, a combination of carrier and reactant gases at multiple inlets, and may be used with an arbitrarily large number of gases, when at least two gases of different molecular weights are provided. A linear flow pattern is achieved within the reactor, avoiding laminar recirculation areas, and permitting uniform deposition and growth of epitaxial layers on the substrate.

摘要翻译： 在用于在衬底或其它CVD反应器系统上生长外延层的旋转盘式反应器中，在与盘的旋转轴线不同的径向距离处的气体入口处朝向衬底的气体具有基本上相同的气体流速/速度， 每个入口气体密度相同。 朝向远离轴的盘的部分的气体可以包括比指向盘的靠近轴的部分的气体更高的反应气体浓度，使得与轴的不同距离处的衬底表面的部分基本上接收 采用相同量的每单位面积的反应气体，以及在与旋转轴线不同的径向距离处具有不同相对分子量的载气的组合基本上使反应器各区域中的气体密度相等。 该系统可以在多个气体入口处的组合或载气施加，多个入口处的载体和反应物气体的组合，并且当提供至少两种不同分子量的气体时，可以与任意大量的气体一起使用 。 在反应器内实现线性流动模式，避免层流再循环区域，并允许外延层在衬底上的均匀沉积和生长。

公开(公告)号：US08287646B2

公开(公告)日：2012-10-16

申请号：US12951341

申请日：2010-11-22

申请人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

发明人： Bojan Mitrovic ,  Alex Gurary ,  Eric A. Armour

IPC分类号： C23C16/00 ,  C23C16/455 ,  H01L21/306

CPC分类号： C23C16/45565 ,  C23C16/45574

摘要： An MOCVD reactor such as a rotating disc reactor (10) is equipped with a gas injector head having diffusers (129) disposed between adjacent gas inlets. The diffusers taper in the downstream direction. The injector head desirably has inlets (117) for a first gas such as a metal alkyl disposed in radial rows which terminate radially inward from the reactor wall to minimize deposition of the reactants on the reactor wall. The injector head desirably also has inlets (125) for a second gas such as ammonia arranged in a field between the rows of first gas inlets, and additionally has a center inlet (135) for the second gas coaxial with the axis of rotation.

摘要翻译： 诸如旋转盘式反应器（10）的MOCVD反应器装备有具有布置在相邻气体入口之间的扩散器（129）的气体注入头。 扩散器沿下游方向逐渐变细。 喷射头理想地具有用于第一气体的入口（117），例如设置在径向排的金属烷基，其从反应器壁径向向内终止，以最小化反应物在反应器壁上的沉积。 喷射头理想地还具有用于第二气体（例如布置在第一气体入口排之间的场中的氨）的入口（125），并且还具有用于与旋转轴线共轴的第二气体的中心入口（135）。

公开(公告)号：US09324590B2

公开(公告)日：2016-04-26

申请号：US12967381

申请日：2010-12-14

申请人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Vadim Boguslavskiy ,  Bojan Mitrovic

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/67 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  H01L21/687

CPC分类号： H01L22/26 ,  C23C16/45521 ,  C23C16/4584 ,  C23C16/52 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/67109 ,  H01L21/68785 ,  H01L21/68792

摘要： Wafer treatment process and apparatus is provided with a wafer carrier arranged to hold wafers and to inject a fill gas into gaps between the wafers and the wafer carrier. The apparatus is arranged to vary the composition, flow rate, or both of the fill gas so as to counteract undesired patterns of temperature non-uniformity of the wafers.

摘要翻译： 晶片处理工艺和设备设置有晶片载体，其布置成保持晶片并将填充气体注入到晶片和晶片载体之间的间隙中。 该装置被布置成改变填充气体的组成，流速或两者，以便抵消晶片的不期望的温度不均匀图案。

公开(公告)号：US08895107B2

公开(公告)日：2014-11-25

申请号：US12291350

申请日：2008-11-06

申请人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/46 ,  C23C16/30 ,  C23C16/458

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into a rotating-disc reactor and directed downwardly onto a wafer carrier and substrates which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-250° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

摘要翻译： 化学气相沉积反应器及方法。 诸如包括III族金属源和V族金属源的气体的反应性气体被引入到旋转圆盘式反应器中并且被向下引导到晶片载体和基板上，所述晶片载体和基板保持在升高的基板温度，通常高于约400° 通常约700-1100℃以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃，最优选约100℃-250℃的入口温度下被引入反应器中。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。

公开(公告)号：US20120040514A1

公开(公告)日：2012-02-16

申请号：US13128163

申请日：2009-11-06

申请人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

发明人： Alex Gurary ,  Mikhail Belousov ,  Bojan Mitrovic

IPC分类号： H01L21/205 ,  C23C16/52

CPC分类号： H01L21/02538 ,  C23C16/301 ,  C23C16/45504 ,  C23C16/4557 ,  C23C16/45574 ,  C23C16/45578 ,  C23C16/45587 ,  C23C16/458 ,  C23C16/4584 ,  C23C16/46 ,  H01L21/0262

摘要： A chemical vapor deposition reactor and method. Reactive gases, such as gases including a Group III metal source and a Group V metal source, are introduced into the chamber (10) of a rotating-disc reactor and directed downwardly onto a wafer carrier (32) and substrates (40) which are maintained at an elevated substrate temperature, typically above about 400° C. and normally about 700-1100° C. to deposit a compound such as a III-V semiconductor. The gases are introduced into the reactor at an inlet temperature desirably above about 75° C. and most preferably about 100°-350° C. The walls of the reactor may be at a temperature close to the inlet temperature. Use of an elevated inlet temperature allows the use of a lower rate of rotation of the wafer carrier, a higher operating pressure, lower flow rate, or some combination of these.

摘要翻译： 化学气相沉积反应器及方法。 将反应性气体，例如包括III族金属源和V族金属源的气体引入旋转盘式反应器的室（10）中并且向下引导到晶片载体（32）和基板（40） 保持在升高的基板温度，通常高于约400℃，通常为约700-1100℃，以沉积诸如III-V族半导体的化合物。 气体在理想的高于约75℃的入口温度下引入反应器中，最优选的是约100℃-350℃。反应器的壁可以处于接近入口温度的温度。 使用升高的入口温度允许使用较低的晶片载体的旋转速率，更高的操作压力，更低的流速或这些的一些组合。