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公开(公告)号:US20090206484A1
公开(公告)日:2009-08-20
申请号:US12031103
申请日:2008-02-14
IPC分类号: H01L21/768 , H01L23/538
CPC分类号: H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要: Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译: 为了改变铜线和通孔的微观结构,将钴添加到铜种子层,铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面,并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号:US08008199B2
公开(公告)日:2011-08-30
申请号:US12869113
申请日:2010-08-26
IPC分类号: H01L21/44 , H01L21/4763
CPC分类号: H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要: Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译: 为了改变铜线和通孔的微观结构,将钴添加到铜种子层,铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面,并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号:US20100323517A1
公开(公告)日:2010-12-23
申请号:US12869113
申请日:2010-08-26
IPC分类号: H01L21/768
CPC分类号: H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要: Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译: 为了改变铜线和通孔的微观结构,将钴添加到铜种子层,铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面,并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号:US07843063B2
公开(公告)日:2010-11-30
申请号:US12031103
申请日:2008-02-14
CPC分类号: H01L21/76877 , H01L21/76873 , H01L23/53233 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要: Cobalt is added to a copper seed layer, a copper plating layer, or a copper capping layer in order to modify the microstructure of copper lines and vias. The cobalt can be in the form of a copper-cobalt alloy or as a very thin cobalt layer. The grain boundaries configured in bamboo microstructure in the inventive metal interconnect structure shut down copper grain boundary diffusion. The composition of the metal interconnect structure after grain growth contains from about 1 ppm to about 10% of cobalt in atomic concentration. Grain boundaries extend from a top surface of a copper-cobalt alloy line to a bottom surface of the copper-cobalt alloy line, and are separated from any other grain boundary by a distance greater than a width of the copper-cobalt alloy line.
摘要翻译: 为了改变铜线和通孔的微观结构,将钴添加到铜种子层,铜镀层或铜覆盖层。 钴可以是铜 - 钴合金的形式或作为非常薄的钴层。 本发明金属互连结构中竹结构中晶界的结构关闭了铜晶界扩散。 晶粒生长后的金属互连结构的组成含有约1ppm至约10原子浓度的钴。 晶粒边界从铜 - 钴合金线的顶表面延伸到铜 - 钴合金线的底表面,并且与任何其它晶界分开大于铜 - 钴合金线的宽度的距离。
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公开(公告)号:US08901414B2
公开(公告)日:2014-12-02
申请号:US13232648
申请日:2011-09-14
申请人: Brett C. Baker-O'Neal , Qiang Huang
发明人: Brett C. Baker-O'Neal , Qiang Huang
摘要: A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.
摘要翻译: 提供了具有改进性能的光电器件,例如太阳能电池。 光伏器件包括含有一定量的杂质的含铜层,其含量足以阻止铜扩散到下面的半导体衬底中。 位于半导体衬底的前侧表面上的栅格图案内的含铜层包括位于至少一个金属扩散阻挡层上方的杂质含量为200ppm以上的电镀含铜材料。
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公开(公告)号:US20130065351A1
公开(公告)日:2013-03-14
申请号:US13604223
申请日:2012-09-05
申请人: Brett C. Baker-O'Neal , Qiang Huang
发明人: Brett C. Baker-O'Neal , Qiang Huang
IPC分类号: H01L31/18
摘要: A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.
摘要翻译: 提供了具有改进性能的光电器件,例如太阳能电池。 光伏器件包括含有一定量的杂质的含铜层,其含量足以阻止铜扩散到下面的半导体衬底中。 位于半导体衬底的前侧表面上的栅格图案内的含铜层包括位于至少一个金属扩散阻挡层上方的杂质含量为200ppm以上的电镀含铜材料。
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公开(公告)号:US20130061916A1
公开(公告)日:2013-03-14
申请号:US13232648
申请日:2011-09-14
申请人: Brett C. Baker-O'Neal , Qiang Huang
发明人: Brett C. Baker-O'Neal , Qiang Huang
IPC分类号: H01L31/0216 , H01L31/18 , H01L31/0224
摘要: A photovoltaic device, such as a solar cell, having improved performance is provided. The photovoltaic device includes a copper-containing layer that contains an amount of impurities therein which is sufficient to hinder the diffusion of copper into an underlying semiconductor substrate. The copper-containing layer, which is located within a grid pattern formed on a front side surface of a semiconductor substrate, includes an electroplated copper-containing material having an impurity level of 200 ppm or greater located atop at least one metal diffusion barrier layer.
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公开(公告)号:US07479213B2
公开(公告)日:2009-01-20
申请号:US11020068
申请日:2004-12-23
申请人: Mizuki Nagai , Hiroyuki Kanda , Keiichi Kurashina , Satoru Yamamoto , Hidenao Suzuki , Koji Mishima , Brett C. Baker-O'Neal , Hariklia Deligianni , Keith Kwietniak
发明人: Mizuki Nagai , Hiroyuki Kanda , Keiichi Kurashina , Satoru Yamamoto , Hidenao Suzuki , Koji Mishima , Brett C. Baker-O'Neal , Hariklia Deligianni , Keith Kwietniak
IPC分类号: C25D5/10
CPC分类号: C25D17/001 , C25D5/10 , C25D5/18 , C25D7/123 , H01L21/2885 , H01L21/7684 , H01L21/76877
摘要: A plating method is capable of preferentially precipitating a plated film fully and uniformly in trenches and via holes according to a mechanical and electrochemical process, and of easily forming a plated film having higher flatness surface without being affected by variations in the shape of trenches and via holes. The plating method includes a first plating process and a second plating process. The second plating process is performed by filling a plating solution between an anode and a substrate, with a porous member placed in the plating solution, repeatedly bringing the porous member and the substrate into and out of contact with each other, passing a current between the anode and the substrate while the porous member is being held in contact with the substrate.
摘要翻译: 电镀方法能够根据机械和电化学方法优先将电镀膜完全均匀地沉积在沟槽和通孔中,并且容易地形成具有较高平坦度表面的电镀膜,而不受沟槽形状和通孔形状的变化的影响 孔。 电镀方法包括第一电镀工艺和第二电镀工艺。 通过在阳极和基板之间填充电镀液,将多孔构件放置在电镀液中,反复使多孔构件和基板彼此接触和脱离接触来进行第二电镀工艺,使电流在 阳极和衬底,同时多孔构件被保持与衬底接触。
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公开(公告)号:US20090095634A1
公开(公告)日:2009-04-16
申请号:US11907589
申请日:2007-10-15
申请人: Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka , Philippe Vereecken , Brett C. Baker-O'Neal , Hariklia Deligianni , Keith Kwietniak
发明人: Natsuki Makino , Keisuke Namiki , Kunihito Ide , Junji Kunisawa , Katsuyuki Musaka , Philippe Vereecken , Brett C. Baker-O'Neal , Hariklia Deligianni , Keith Kwietniak
CPC分类号: C25D17/00 , C25D17/008 , C25D21/12 , H01L21/2885 , H01L21/76877
摘要: A plating method can form a plated film having a uniform thickness over the entire surface, including the peripheral surface, of a substrate. The plating method includes: disposing an anode so as to face a conductive film, formed on a substrate, which serves as a cathode, and disposing an auxiliary cathode on an ring-shaped seal member for sealing a peripheral portion of the substrate; bringing the conductive film, the anode and the auxiliary cathode into contact with a plating solution; and supplying electric currents between the anode and the conductive film, and between the anode and the auxiliary cathode to carry out plating.
摘要翻译: 电镀方法可以在基板的整个表面(包括外周表面)上形成均匀厚度的镀膜。 电镀方法包括:将阳极设置成面对形成在用作阴极的基板上的导电膜,并将辅助阴极设置在用于密封基板的周边部分的环形密封构件上; 使导电膜,阳极和辅助阴极与电镀液接触; 并且在阳极和导电膜之间以及阳极和辅助阴极之间提供电流以进行电镀。
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