公开(公告)号：US10961383B2

公开(公告)日：2021-03-30

申请号：US16133051

申请日：2018-09-17

Applicant: Brewer Science, Inc.

Inventor： Kui Xu ,  Richard Elsworth Daugherty, Jr. ,  Daniel Patrick Sweat ,  Mary Ann Hockey ,  Eric Calderas ,  Megan Bennett

IPC: C08L53/00 ,  C08F20/18 ,  C08F26/06 ,  C08G63/06 ,  C08F20/26

Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.

公开(公告)号：US20190233636A1

公开(公告)日：2019-08-01

申请号：US16133051

申请日：2018-09-17

Applicant: Brewer Science, Inc.

Inventor： Kui Xu ,  Richard Elsworth Daugherty, JR. ,  Daniel Patrick Sweat ,  Mary Ann Hockey ,  Eric Calderas ,  Megan Bennett

IPC: C08L53/00 ,  C08F20/18 ,  C08F20/26 ,  C08F26/06 ,  C08G63/06

CPC classification number: C08L53/00 ,  C08F20/18 ,  C08F20/26 ,  C08F26/06 ,  C08G63/06 ,  C08L2203/20

Abstract: Novel block copolymers (“BCPs”) having non-random distributions of comonomers within at least one of the blocks and methods of using those BCPs in directed self-assembly (“DSA”) processes are provided. The non-random (e.g., gradient-creating) distributions can be customized in order to concentrate the desired comonomer properties in predetermined areas of the BCP. These BCPs can achieve perpendicular orientation with simple annealing and offer superior long-range ordering and lower defectivity when compared to prior art BCPs. These BCPs can be incorporated into compositions that simultaneously offer the benefits of high-χ and rapid thermal-annealing kinetics while maintaining similar or improved guide process windows when compared to prior art BCPs.

公开(公告)号：US20240030063A1

公开(公告)日：2024-01-25

申请号：US18354433

申请日：2023-07-18

Applicant: Brewer Science, Inc.

Inventor： Daniel Patrick Sweat ,  Shannon Brown ,  Joyce A. Lowes

IPC: H01L21/768 ,  G03F7/027 ,  H01L23/528

CPC classification number: H01L21/76837 ,  G03F7/027 ,  H01L21/7682 ,  H01L23/5283

Abstract: Thermally decomposable gap-fill materials are disclosed that fill small features and are completely removed by a high-temperature bake after processing. These materials are self-crosslinkable polymers. Potential applications of these materials include use as sacrificial gap-fill materials for creating air gaps, as well as protection of high-aspect-ratio or other delicate microelectronic features during processing steps.

公开(公告)号：US20230282478A1

公开(公告)日：2023-09-07

申请号：US18177546

申请日：2023-03-02

Applicant: Brewer Science, Inc.

Inventor： Daniel Patrick Sweat ,  Jakub Koza ,  Jamie Storie

IPC: H01L21/027 ,  C09D163/04 ,  C08F265/04 ,  H01L21/02 ,  H01L21/308 ,  H01L21/311

CPC classification number: H01L21/0276 ,  C08F265/04 ,  C09D163/04 ,  H01L21/02164 ,  H01L21/02186 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/31144 ,  H01L21/31111 ,  H01L21/31133

Abstract: Adhesive additives are disclosed that enhance spin-on carbon (SOC) resistance to SC-1 wet etch. The additives can be formed by reacting a polymer or oligomer (such as an adhesion polymer or adhesion oligomer) with 3,4,5-triacetoxybenzoic acid (TABA). When added to standard SOC layers or used as a primer between an SOC layer and substrate, these additives enhance the adhesion of the SOC layer to TiN and other substrates and reduce undercut during SC-1 wet etch.

公开(公告)号：US20250096005A1

公开(公告)日：2025-03-20

申请号：US18890144

申请日：2024-09-19

Applicant: Brewer Science, Inc.

Inventor： Jinhua Dai ,  Joyce A. Lowes ,  Daniel Patrick Sweat

IPC: H01L21/3105 ,  H01L21/02 ,  H01L21/027 ,  H01L21/32

Abstract: Compositions and methods for global planarization of microelectronic substrates are provided. The methods include applying a crosslinking modifier composition to the surface of a substrate, or to any intermediate layer(s) on the substrate surface. A planarizing material can then be applied to the crosslinking modifier layer, which influences the degree of crosslinking in the planarizing layer. Depending on the specific topography of the underlying substrate (or intermediate layer), different amounts of planarizing material are removed during a subsequent develop back step, thereby eliminating bias that usually exists between regions of varying topographic density. The result is an effective global planarization method that is both time and cost efficient.

公开(公告)号：US20250068077A1

公开(公告)日：2025-02-27

申请号：US18813295

申请日：2024-08-23

Applicant: Brewer Science, Inc.

Inventor： Daniel Patrick Sweat ,  Joyce A. Lowes

IPC: G03F7/11 ,  C07C67/313 ,  C07C69/734 ,  C07D251/32 ,  C08F8/14 ,  C08F38/00 ,  C08G59/14 ,  G03F7/20

Abstract: A novel method to prepare crosslinked thin films without the use of catalysts is disclosed. Propiolic acid is grafted to a glycidyl or epoxy group using a phosphonium catalyst under mild conditions to yield a propiolate ester. The propiolate ester is thermally crosslinkable (and the polymer film rendered insoluble) at temperatures as low as 120° C., and some embodiments may undergo photoinduced crosslinking upon exposure to DUV light. The resulting crosslinked films are equivalent or better in stability to acid-catalyzed epoxide crosslinked films and can be used for a multitude of different applications.

公开(公告)号：US20240134281A1

公开(公告)日：2024-04-25

申请号：US18483118

申请日：2023-10-09

Applicant: Brewer Science, Inc.

Inventor： Daniel Patrick Sweat

IPC: G03F7/075 ,  G03F7/16 ,  G03F7/20 ,  G03F7/34

CPC classification number: G03F7/0755 ,  G03F7/168 ,  G03F7/2004 ,  G03F7/346 ,  G03F7/32

Abstract: Methods for direct patterning of a silicon hardmask with extreme ultraviolet (EUV) radiation are provided. The method involves forming a polysiloxane and/or oligosiloxane composition into a silicon hardmask layer followed by solvent removal. Without using a photoresist and/or other layer silicon hardmask layer, condensation of the siloxane sol-gel polymers and/or oligomers is induced by EUV radiation, rendering the exposed portions insoluble in typical lithography solvents or developers. The exposed portions of the silicon hardmask layer are removed, leaving a pattern in the silicon hardmask layer that can be transferred to any layers below the silicon hardmask layer, and ultimately to the substrate.