公开(公告)号：US20070152276A1

公开(公告)日：2007-07-05

申请号：US11323578

申请日：2005-12-30

申请人： John Arnold ,  Glenn Biery ,  Alessandro Callegari ,  Tze-Chiang Chen ,  Michael Chudzik ,  Bruce Doris ,  Michael Gribelyuk ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Joseph Newbury ,  Vamsi Paruchuri ,  Michelle Steen

发明人： John Arnold ,  Glenn Biery ,  Alessandro Callegari ,  Tze-Chiang Chen ,  Michael Chudzik ,  Bruce Doris ,  Michael Gribelyuk ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Joseph Newbury ,  Vamsi Paruchuri ,  Michelle Steen

IPC分类号： H01L29/94

CPC分类号： H01L21/823857 ,  H01L21/823842

摘要： The present invention relates to complementary metal-oxide-semiconductor (CMOS) circuits that each contains at least a first and a second gate stacks. The first gate stack is located over a first device region (e.g., an n-FET device region) in a semiconductor substrate and comprises at least, from bottom to top, a gate dielectric layer, a metallic gate conductor, and a silicon-containing gate conductor. The second gate stack is located over a second device region (e.g., a p-FET device region) in the semiconductor substrate and comprises at least, from bottom to top, a gate dielectric layer and a silicon-containing gate conductor. The first and second gate stacks can be formed over the semiconductor substrate in an integrated manner by various methods of the present invention.

摘要翻译： 本发明涉及互补金属氧化物半导体（CMOS）电路，其各自包含至少第一和第二栅极堆叠。 第一栅极堆叠位于半导体衬底中的第一器件区域（例如，n-FET器件区域）上，并且至少从底部至顶部包括栅极介电层，金属栅极导体和含硅的 门导体。 第二栅极堆叠位于半导体衬底中的第二器件区域（例如，p-FET器件区域）上，并且至少包括从栅极电介质层和含硅栅极导体的底部到顶部。 可以通过本发明的各种方法以集成的方式在半导体衬底上形成第一和第二栅极叠层。

公开(公告)号：US20060237796A1

公开(公告)日：2006-10-26

申请号：US11111592

申请日：2005-04-21

申请人： Eduard Cartier ,  Matthew Copel ,  Bruce Doris ,  Rajarao Jammy ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Keith Wong

发明人： Eduard Cartier ,  Matthew Copel ,  Bruce Doris ,  Rajarao Jammy ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi Paruchuri ,  Keith Wong

IPC分类号： H01L29/76

CPC分类号： H01L21/823842

摘要： The present invention is directed to CMOS structures that include at least one nMOS device located on one region of a semiconductor substrate; and at least one pMOS device located on another region of the semiconductor substrate. In accordance with the present invention, the at least one nMOS device includes a gate stack comprising a gate dielectric, a low workfunction elemental metal having a worfunction of less than 4.2 eV, an in-situ metallic capping layer, and a polysilicon encapsulation layer and the at least one pMOS includes a gate stack comprising a gate dielectric, a high workfunction elemental metal having a workfunction of greater than 4.9 eV, a metallic capping layer, and a polysilicon encapsulation layer. The present invention also provides methods of fabricating such a CMOS structure.

摘要翻译： 本发明涉及包括位于半导体衬底的一个区域上的至少一个nMOS器件的CMOS结构; 以及位于半导体衬底的另一区域上的至少一个pMOS器件。 根据本发明，至少一个nMOS器件包括栅堆叠，其包括栅极电介质，功能小于4.2eV的低功函数元素金属，原位金属覆盖层和多晶硅封装层，以及 所述至少一个pMOS包括包括栅极电介质的栅极堆叠，具有大于4.9eV的功函数的高功函数元素金属，金属覆盖层和多晶硅封装层。 本发明还提供了制造这种CMOS结构的方法。

公开(公告)号：US20070148838A1

公开(公告)日：2007-06-28

申请号：US11320330

申请日：2005-12-28

申请人： Bruce Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi Paruchuri

发明人： Bruce Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi Paruchuri

IPC分类号： H01L21/8234

CPC分类号： H01L21/823857 ,  H01L21/823878 ,  H01L21/84

摘要： A complementary metal oxide semiconductor (CMOS) structure including at least one nFET and at least one pFET located on a surface of a semiconductor substrate is provided. In accordance with the present invention, the nFET and the pFET both include at least a single gate metal and the nFET gate stack is engineered to have a gate dielectric stack having no net negative charge and the pFET gate stack is engineered to have a gate dielectric stack having no net positive charge. In particularly, the present invention provides a CMOS structure in which the nFET gate stack is engineered to include a band edge workfunction and the pFET gate stack is engineered to have a ¼gap workfunction. In one embodiment of the present invention, the first gate dielectric stack includes a first high k dielectric and an alkaline earth metal-containing layer or a rare earth metal-containing layer, while the second high k gate dielectric stack comprises a second high k dielectric.

摘要翻译： 提供了包括位于半导体衬底的表面上的至少一个nFET和至少一个pFET的互补金属氧化物半导体（CMOS）结构。 根据本发明，nFET和pFET都包括至少一个栅极金属，并且nFET栅极堆叠被设计成具有不具有净负电荷的栅极电介质堆叠，并且pFET栅极堆叠被工程化以具有栅极电介质 堆没有净正电荷。 特别地，本发明提供了一种CMOS结构，其中nFET栅极堆叠被设计成包括带边缘功函数，并且pFET栅极堆叠被设计为具有1/4间隙功函数。 在本发明的一个实施例中，第一栅极电介质堆叠包括第一高k电介质和含碱土金属的层或含稀土金属的层，而第二高k栅介质叠层包括第二高k电介质 。

公开(公告)号：US08035173B2

公开(公告)日：2011-10-11

申请号：US12712371

申请日：2010-02-25

申请人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

发明人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

IPC分类号： H01L29/78

CPC分类号： H01L21/823864 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/4908 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the gate sidewall nitride. An oxide spacer is formed directly on the sidewalls of a PFET gate stack and on the gate sidewall nitride on the NFET. After high temperature processing, the first and second dielectric portions contain a non-stoichiometric oxygen deficient high-k dielectric material. The semiconductor structure is subjected to an anneal in an oxygen environment, during which oxygen diffuses through the oxide spacer into the second high-k dielectric portion. The PFET comprises a more stoichiometric high-k dielectric material and the NFET comprises a less stoichiometric high-k dielectric material. Threshold voltages of the PFET and the NFET are optimized by the present invention.

摘要翻译： 在半导体衬底上形成包含第一高k电介质部分的NFET和包含第二高k栅极电介质部分的PFET。 栅极侧壁氮化物形成在NFET的栅极上，而PFET的侧壁保持没有栅极侧壁氮化物。 直接在PFET栅极堆叠的侧壁上和NFET上的栅极侧壁氮化物上形成氧化物间隔物。 在高温处理之后，第一和第二介质部分含有非化学计量的缺氧高k电介质材料。 半导体结构在氧气环境中进行退火，在该环境中，氧气通过氧化物间隔物扩散到第二高k电介质部分。 PFET包括更高化学计量的高k电介质材料，并且NFET包含较少化学计量的高k电介质材料。 本发明优化了PFET和NFET的阈值电压。

公开(公告)号：US20080308872A1

公开(公告)日：2008-12-18

申请号：US11763047

申请日：2007-06-14

申请人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

发明人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823864 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/4908 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the gate sidewall nitride. An oxide spacer is formed directly on the sidewalls of a PFET gate stack and on the gate sidewall nitride on the NFET. After high temperature processing, the first and second dielectric portions contain a non-stoichiometric oxygen deficient high-k dielectric material. The semiconductor structure is subjected to an anneal in an oxygen environment, during which oxygen diffuses through the oxide spacer into the second high-k dielectric portion. The PFET comprises a more stoichiometric high-k dielectric material and the NFET comprises a less stoichiometric high-k dielectric material. Threshold voltages of the PFET and the NFET are optimized by the present invention.

摘要翻译： 在半导体衬底上形成包含第一高k电介质部分的NFET和包含第二高k栅极电介质部分的PFET。 栅极侧壁氮化物形成在NFET的栅极上，而PFET的侧壁保持没有栅极侧壁氮化物。 直接在PFET栅极堆叠的侧壁上和NFET上的栅极侧壁氮化物上形成氧化物间隔物。 在高温处理之后，第一和第二介质部分含有非化学计量的缺氧高k电介质材料。 半导体结构在氧气环境中进行退火，在该环境中，氧气通过氧化物间隔物扩散到第二高k电介质部分。 PFET包括更高化学计量的高k电介质材料，并且NFET包含较少化学计量的高k电介质材料。 本发明优化了PFET和NFET的阈值电压。

公开(公告)号：US07696036B2

公开(公告)日：2010-04-13

申请号：US11763047

申请日：2007-06-14

申请人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

发明人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

IPC分类号： H01L21/8238

CPC分类号： H01L21/823864 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/4908 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the gate sidewall nitride. An oxide spacer is formed directly on the sidewalls of a PFET gate stack and on the gate sidewall nitride on the NFET. After high temperature processing, the first and second dielectric portions contain a non-stoichiometric oxygen deficient high-k dielectric material. The semiconductor structure is subjected to an anneal in an oxygen environment, during which oxygen diffuses through the oxide spacer into the second high-k dielectric portion. The PFET comprises a more stoichiometric high-k dielectric material and the NFET comprises a less stoichiometric high-k dielectric material. Threshold voltages of the PFET and the NFET are optimized by the present invention.

摘要翻译： 在半导体衬底上形成包含第一高k电介质部分的NFET和包含第二高k栅极电介质部分的PFET。 栅极侧壁氮化物形成在NFET的栅极上，而PFET的侧壁保持没有栅极侧壁氮化物。 直接在PFET栅极堆叠的侧壁上和NFET上的栅极侧壁氮化物上形成氧化物间隔物。 在高温处理之后，第一和第二介质部分含有非化学计量的缺氧高k电介质材料。 半导体结构在氧气环境中进行退火，在该环境中，氧气通过氧化物间隔物扩散到第二高k电介质部分。 PFET包括更高化学计量的高k电介质材料，并且NFET包含较少化学计量的高k电介质材料。 本发明优化了PFET和NFET的阈值电压。

公开(公告)号：US20100148273A1

公开(公告)日：2010-06-17

申请号：US12712371

申请日：2010-02-25

申请人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

发明人： Huiming Bu ,  Eduard A. Cartier ,  Bruce B. Doris ,  Young-Hee Kim ,  Barry Linder ,  Vijay Narayanan ,  Vamsi K. Paruchuri ,  Michelle L. Steen

IPC分类号： H01L27/092

CPC分类号： H01L21/823864 ,  H01L21/823814 ,  H01L21/823857 ,  H01L21/823878 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/165 ,  H01L29/4908 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/66636 ,  H01L29/7843 ,  H01L29/7848

摘要： An NFET containing a first high-k dielectric portion and a PFET containing a second high-k gate dielectric portion are formed on a semiconductor substrate. A gate sidewall nitride is formed on the gate of the NFET, while the sidewalls of the PFET remain free of the gate sidewall nitride. An oxide spacer is formed directly on the sidewalls of a PFET gate stack and on the gate sidewall nitride on the NFET. After high temperature processing, the first and second dielectric portions contain a non-stoichiometric oxygen deficient high-k dielectric material. The semiconductor structure is subjected to an anneal in an oxygen environment, during which oxygen diffuses through the oxide spacer into the second high-k dielectric portion. The PFET comprises a more stoichiometric high-k dielectric material and the NFET comprises a less stoichiometric high-k dielectric material. Threshold voltages of the PFET and the NFET are optimized by the present invention.

摘要翻译： 在半导体衬底上形成包含第一高k电介质部分的NFET和包含第二高k栅极电介质部分的PFET。 栅极侧壁氮化物形成在NFET的栅极上，而PFET的侧壁保持没有栅极侧壁氮化物。 直接在PFET栅极堆叠的侧壁上和NFET上的栅极侧壁氮化物上形成氧化物间隔物。 在高温处理之后，第一和第二介质部分含有非化学计量的缺氧高k电介质材料。 半导体结构在氧气环境中进行退火，在该环境中，氧气通过氧化物间隔物扩散到第二高k电介质部分。 PFET包括更高化学计量的高k电介质材料，并且NFET包含较少化学计量的高k电介质材料。 本发明优化了PFET和NFET的阈值电压。

公开(公告)号：US20070090471A1

公开(公告)日：2007-04-26

申请号：US11259644

申请日：2005-10-26

申请人： Eduard Cartier ,  Mathew Copel ,  Martin Frank ,  Evgeni Gousev ,  Paul Jamison ,  Rajarao Jammy ,  Barry Linder ,  Vijay Narayanan

发明人： Eduard Cartier ,  Mathew Copel ,  Martin Frank ,  Evgeni Gousev ,  Paul Jamison ,  Rajarao Jammy ,  Barry Linder ,  Vijay Narayanan

IPC分类号： H01L29/94 ,  H01L21/8238

CPC分类号： H01L29/513 ,  H01L21/28194 ,  H01L21/28238 ,  H01L21/823807 ,  H01L29/105 ,  H01L29/1083 ,  H01L29/517 ,  H01L29/518 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconductor structure, particularly a pFET, which includes a dielectric material that has a dielectric constant of greater than that of SiO2 and a Ge or Si content of greater than 50% and at least one other means for threshold/flatband voltage tuning by material stack engineering is provided. The other means contemplated in the present invention include, for example, utilizing an insulating interlayer atop the dielectric for charge fixing and/or by forming an engineered channel region. The present invention also relates to a method of fabricating such a CMOS structure.

摘要翻译： 一种半导体结构，特别是pFET，其包括介电常数大于SiO 2的介电常数和大于50％的Ge或Si含量的至少一种其它装置， 提供材料堆栈工程的阈值/平带电压调谐。 本发明中考虑的其它方法包括例如在用于电荷固定的电介质的顶部和/或通过形成工程化的沟道区域之间使用绝缘夹层。 本发明还涉及一种制造这种CMOS结构的方法。

公开(公告)号：US20100118270A1

公开(公告)日：2010-05-13

申请号：US12606993

申请日：2009-10-27

申请人： William Shea ,  Yeou-Yen Cheng ,  Shelly Reed ,  Willem Crone ,  Barry Linder ,  Phillip Baker ,  Yan Zhou

发明人： William Shea ,  Yeou-Yen Cheng ,  Shelly Reed ,  Willem Crone ,  Barry Linder ,  Phillip Baker ,  Yan Zhou

IPC分类号： A61B3/117

CPC分类号： A61B3/117

摘要： An apparatus and method is disclosed that provides a means for mounting a separate optical element, such as a gonio lens, to a hand-held eye imaging device. In this way, the doctor only needs to use one hand to hold the imaging apparatus while the other hand can be freed to open the patient eye lid and also maintain a safe relative distance of the gonio lens with respect to the patient's eye. The gonio lens and adaptor can each or both be made disposable and also mechanically switchable relative to each other as well as relative to the handheld eye imaging device so that different portions of the patient eye can be imaged sequentially without the need to rotate the hand held eye imaging device.

摘要翻译： 公开了一种设备和方法，其提供用于将单独的光学元件（例如gonio透镜）安装到手持式眼睛成像装置的装置。 以这种方式，医生只需要用一只手来保持成像装置，另一只手可以被释放以打开患者眼罩，并且还保持角膜透镜相对于患者眼睛的安全的相对距离。 角膜透镜和适配器可以各自或两者都被制成一次性的并且也可以相对于彼此以及相对于手持式眼睛成像装置机械地切换，使得患者眼睛的不同部分可以顺序成像，而不需要旋转手持 眼睛成像装置。

公开(公告)号：US20080097794A1

公开(公告)日：2008-04-24

申请号：US11953455

申请日：2007-12-10

申请人： Claude Arnaud ,  Barry Linder ,  Daniel Steines ,  Philipp Lang

发明人： Claude Arnaud ,  Barry Linder ,  Daniel Steines ,  Philipp Lang

IPC分类号： G06Q50/00

CPC分类号： G06Q50/24 ,  A61B5/002 ,  A61B5/0022 ,  A61B5/7264 ,  A61B6/4423 ,  A61B6/505 ,  A61B6/508 ,  A61B6/563 ,  A61B6/583 ,  G06F19/321 ,  G06K2009/00946 ,  G06Q30/02 ,  G06Q50/22 ,  G06T7/80 ,  G06T2207/10116 ,  G06T2207/30036 ,  G16H10/60 ,  G16H50/30 ,  G16H50/80

摘要： A system and method for building and/or manipulating a centralized medical image quantitative information database aid in diagnosing diseases, identifying prevalence of diseases, and analyzing market penetration data and efficacy of different drugs. In one embodiment, the diseases are bone-related, such as osteoporosis and osteoarthritis. Subjects' medical images, personal and treatment information are obtained at information collection terminals, for example, at medical and/or dental facilities, and are transferred to a central database, either directly or through a system server. Quantitative information is derived from the medical images, and stored in a central database, associated with subjects' personal and treatment information. Authorized users, such as medical officials and/or pharmaceutical companies, can access the database, either directly or through the central server, to diagnose diseases and perform statistical analysis on the stored data. Decisions can be made regarding marketing of drugs for treating the diseases in question, based on analysis of efficacy, market penetration, and performance of competitive drugs.

摘要翻译： 一种用于建立和/或操纵集中式医学图像定量信息数据库的系统和方法，用于诊断疾病，确定疾病流行率，分析不同药物的市场渗透数据和功效。 在一个实施方案中，疾病是骨相关的，例如骨质疏松症和骨关节炎。 在信息收集终端（例如医疗和/或牙科设施）处获得受试者的医学图像，个人和治疗信息，并且直接或通过系统服务器传送到中央数据库。 定量信息来自医学图像，并存储在与受试者的个人和治疗信息相关联的中央数据库中。 授权用户（如医务人员和/或制药公司）可以直接或通过中央服务器访问数据库，以诊断疾病并对存储的数据执行统计分析。 根据有效性，市场渗透性和竞争性药物的表现分析，可以作出有关药物治疗有关疾病的销售决定。